JP5832708B2 - 複数の広幅イオンビーム用アンテナを有する誘導結合プラズマイオン源 - Google Patents

複数の広幅イオンビーム用アンテナを有する誘導結合プラズマイオン源 Download PDF

Info

Publication number
JP5832708B2
JP5832708B2 JP2015526691A JP2015526691A JP5832708B2 JP 5832708 B2 JP5832708 B2 JP 5832708B2 JP 2015526691 A JP2015526691 A JP 2015526691A JP 2015526691 A JP2015526691 A JP 2015526691A JP 5832708 B2 JP5832708 B2 JP 5832708B2
Authority
JP
Japan
Prior art keywords
source
ion beam
antenna
windows
sources
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2015526691A
Other languages
English (en)
Japanese (ja)
Other versions
JP2015524607A5 (enExample
JP2015524607A (ja
Inventor
ビロイウ コステル
ビロイウ コステル
シー オルソン ジョセフ
シー オルソン ジョセフ
ダブリュー ベル エドワード
ダブリュー ベル エドワード
シエラツキ マニー
シエラツキ マニー
Original Assignee
ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド
ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド, ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド filed Critical ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド
Publication of JP2015524607A publication Critical patent/JP2015524607A/ja
Publication of JP2015524607A5 publication Critical patent/JP2015524607A5/ja
Application granted granted Critical
Publication of JP5832708B2 publication Critical patent/JP5832708B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/16—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0815—Methods of ionisation
    • H01J2237/0817—Microwaves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31706—Ion implantation characterised by the area treated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Combustion & Propulsion (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Plasma Technology (AREA)
JP2015526691A 2012-08-13 2013-08-08 複数の広幅イオンビーム用アンテナを有する誘導結合プラズマイオン源 Active JP5832708B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261682356P 2012-08-13 2012-08-13
US61/682,356 2012-08-13
US13/961,060 US8809803B2 (en) 2012-08-13 2013-08-07 Inductively coupled plasma ion source with multiple antennas for wide ion beam
US13/961,060 2013-08-07
PCT/US2013/054056 WO2014028290A1 (en) 2012-08-13 2013-08-08 Inductively coupled plasma ion source with multiple antennas for wide ion beam

Publications (3)

Publication Number Publication Date
JP2015524607A JP2015524607A (ja) 2015-08-24
JP2015524607A5 JP2015524607A5 (enExample) 2015-11-05
JP5832708B2 true JP5832708B2 (ja) 2015-12-16

Family

ID=50065489

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015526691A Active JP5832708B2 (ja) 2012-08-13 2013-08-08 複数の広幅イオンビーム用アンテナを有する誘導結合プラズマイオン源

Country Status (6)

Country Link
US (1) US8809803B2 (enExample)
JP (1) JP5832708B2 (enExample)
KR (1) KR101615671B1 (enExample)
CN (1) CN104885186B (enExample)
TW (1) TWI513375B (enExample)
WO (1) WO2014028290A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5617817B2 (ja) * 2011-10-27 2014-11-05 パナソニック株式会社 誘導結合型プラズマ処理装置及び誘導結合型プラズマ処理方法
US9384937B2 (en) * 2013-09-27 2016-07-05 Varian Semiconductor Equipment Associates, Inc. SiC coating in an ion implanter
US9642014B2 (en) 2014-06-09 2017-05-02 Nokomis, Inc. Non-contact electromagnetic illuminated detection of part anomalies for cyber physical security
US9613777B2 (en) 2014-09-11 2017-04-04 Varian Semiconductor Equipment Associates, Inc. Uniformity control using adjustable internal antennas
KR101798371B1 (ko) * 2016-04-27 2017-11-16 (주)브이앤아이솔루션 유도결합 플라즈마 처리장치의 가스공급구조
KR101798373B1 (ko) 2016-05-03 2017-11-17 (주)브이앤아이솔루션 유도결합 플라즈마 처리장치의 유전체창 지지구조
KR101798384B1 (ko) * 2016-05-03 2017-11-17 (주)브이앤아이솔루션 유도결합 플라즈마 처리장치의 rf 안테나 구조
KR101798374B1 (ko) * 2016-05-04 2017-11-17 (주)브이앤아이솔루션 유도결합 플라즈마 처리장치의 유전체창의 지지구조
KR101798376B1 (ko) * 2016-05-04 2017-12-12 (주)브이앤아이솔루션 유도결합 플라즈마 처리장치의 유전체창
GB201806783D0 (en) * 2018-04-25 2018-06-06 Spts Technologies Ltd A plasma generating arrangement
EP3748374B8 (en) 2019-06-06 2023-02-15 Rohde & Schwarz GmbH & Co. KG System and method for calibrating radio frequency test chambers

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100302167B1 (ko) 1993-11-05 2001-11-22 히가시 데쓰로 플라즈마처리장치및플라즈마처리방법
US5653811A (en) 1995-07-19 1997-08-05 Chan; Chung System for the plasma treatment of large area substrates
EP0756309A1 (en) * 1995-07-26 1997-01-29 Applied Materials, Inc. Plasma systems for processing substrates
US5824606A (en) 1996-03-29 1998-10-20 Lam Research Corporation Methods and apparatuses for controlling phase difference in plasma processing systems
JP2001023532A (ja) 1999-07-09 2001-01-26 Nissin Electric Co Ltd イオン源の制御方法およびイオンドーピング装置
JP2001042099A (ja) 1999-07-28 2001-02-16 Toshiba Corp 高周波負イオン源
US6451161B1 (en) * 2000-04-10 2002-09-17 Nano-Architect Research Corporation Method and apparatus for generating high-density uniform plasma
EP1753011B1 (de) 2005-08-13 2012-10-03 HÜTTINGER Elektronik GmbH + Co. KG Verfahren zur Erzeugung von Ansteuersignalen für HF-Leistungsgeneratoren
US20070137576A1 (en) 2005-12-19 2007-06-21 Varian Semiconductor Equipment Associates, Inc. Technique for providing an inductively coupled radio frequency plasma flood gun
US20090004836A1 (en) * 2007-06-29 2009-01-01 Varian Semiconductor Equipment Associates, Inc. Plasma doping with enhanced charge neutralization
JP5125447B2 (ja) * 2007-11-27 2013-01-23 株式会社島津製作所 イオンビーム処理装置
US20090139963A1 (en) 2007-11-30 2009-06-04 Theodoros Panagopoulos Multiple frequency pulsing of multiple coil source to control plasma ion density radial distribution
US20100066252A1 (en) 2008-04-18 2010-03-18 The Regents Of The University Of California Spiral rf-induction antenna based ion source for neutron generators
US7999479B2 (en) * 2009-04-16 2011-08-16 Varian Semiconductor Equipment Associates, Inc. Conjugated ICP and ECR plasma sources for wide ribbon ion beam generation and control
US8590485B2 (en) * 2010-04-26 2013-11-26 Varian Semiconductor Equipment Associates, Inc. Small form factor plasma source for high density wide ribbon ion beam generation

Also Published As

Publication number Publication date
US8809803B2 (en) 2014-08-19
KR101615671B1 (ko) 2016-04-26
TWI513375B (zh) 2015-12-11
KR20150042260A (ko) 2015-04-20
TW201408141A (zh) 2014-02-16
US20140042337A1 (en) 2014-02-13
WO2014028290A1 (en) 2014-02-20
JP2015524607A (ja) 2015-08-24
CN104885186B (zh) 2017-03-08
CN104885186A (zh) 2015-09-02

Similar Documents

Publication Publication Date Title
JP5832708B2 (ja) 複数の広幅イオンビーム用アンテナを有する誘導結合プラズマイオン源
US8917022B2 (en) Plasma generation device and plasma processing device
US10475626B2 (en) Ion-ion plasma atomic layer etch process and reactor
CN102934195B (zh) 用于提取带离子束的电感耦合等离子源
JP5767627B2 (ja) 幅広リボンビームの生成および制御のための複合型ｉｃｐおよびｅｃｒプラズマ源
US9984857B2 (en) Plasma generation device
US20130081761A1 (en) Radical passing device and substrate processing apparatus
JP7264576B2 (ja) 製造プロセスにおける超局所化及びプラズマ均一性制御
EP1976346A1 (en) Apparatus for generating a plasma
KR20170024922A (ko) 플라즈마 발생 장치
US20140209244A1 (en) Skew elimination and control in a plasma enhanced substrate processing chamber
US20170309453A1 (en) Radio frequency extraction system for charge neutralized ion beam
KR20210048567A (ko) 이온 추출 광학부 및 이온 추출 프로세싱 장치
KR100980287B1 (ko) 다중 무선 주파수 안테나를 갖는 유도 결합 플라즈마반응기
US9299536B2 (en) Wide metal-free plasma flood gun
KR100719804B1 (ko) 다중 안테나 구조
KR101585890B1 (ko) 수직 듀얼 챔버로 구성된 대면적 플라즈마 반응기
KR20100120602A (ko) 혼합형 플라즈마 반응기
Zhang et al. Experimental study on the ignition process of a pulsed capacitively coupled RF plasma with a trenched electrode
KR20210083628A (ko) 유도 결합 플라즈마 발생용 안테나 구조
KR20100127353A (ko) 대면적 플라즈마 소스
EP2816586A1 (en) Large-area plasma generating apparatus
US20230083497A1 (en) Uniform plasma linear ion source
JP2007018819A (ja) 処理装置および処理方法
KR101002260B1 (ko) 혼합형 플라즈마 반응기

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150909

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20150909

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20150909

TRDD Decision of grant or rejection written
A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20151005

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20151013

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20151027

R150 Certificate of patent or registration of utility model

Ref document number: 5832708

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250