KR101615671B1 - 와이드 이온 빔을 위한 다수의 안테나들을 갖는 유도 결합 플라즈마 이온 소스 - Google Patents

와이드 이온 빔을 위한 다수의 안테나들을 갖는 유도 결합 플라즈마 이온 소스 Download PDF

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KR101615671B1
KR101615671B1 KR1020157006237A KR20157006237A KR101615671B1 KR 101615671 B1 KR101615671 B1 KR 101615671B1 KR 1020157006237 A KR1020157006237 A KR 1020157006237A KR 20157006237 A KR20157006237 A KR 20157006237A KR 101615671 B1 KR101615671 B1 KR 101615671B1
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source
frequency
antennas
antenna
ion beam
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KR20150042260A (ko
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코스텔 빌로이우
죠셉 씨. 올슨
에드워드 더블유. 벨
만니 시에라드즈키
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베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크.
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/16—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0815—Methods of ionisation
    • H01J2237/0817—Microwaves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31706—Ion implantation characterised by the area treated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Combustion & Propulsion (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Plasma Technology (AREA)
KR1020157006237A 2012-08-13 2013-08-08 와이드 이온 빔을 위한 다수의 안테나들을 갖는 유도 결합 플라즈마 이온 소스 Active KR101615671B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261682356P 2012-08-13 2012-08-13
US61/682,356 2012-08-13
US13/961,060 US8809803B2 (en) 2012-08-13 2013-08-07 Inductively coupled plasma ion source with multiple antennas for wide ion beam
US13/961,060 2013-08-07
PCT/US2013/054056 WO2014028290A1 (en) 2012-08-13 2013-08-08 Inductively coupled plasma ion source with multiple antennas for wide ion beam

Publications (2)

Publication Number Publication Date
KR20150042260A KR20150042260A (ko) 2015-04-20
KR101615671B1 true KR101615671B1 (ko) 2016-04-26

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KR1020157006237A Active KR101615671B1 (ko) 2012-08-13 2013-08-08 와이드 이온 빔을 위한 다수의 안테나들을 갖는 유도 결합 플라즈마 이온 소스

Country Status (6)

Country Link
US (1) US8809803B2 (enExample)
JP (1) JP5832708B2 (enExample)
KR (1) KR101615671B1 (enExample)
CN (1) CN104885186B (enExample)
TW (1) TWI513375B (enExample)
WO (1) WO2014028290A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5617817B2 (ja) * 2011-10-27 2014-11-05 パナソニック株式会社 誘導結合型プラズマ処理装置及び誘導結合型プラズマ処理方法
US9384937B2 (en) * 2013-09-27 2016-07-05 Varian Semiconductor Equipment Associates, Inc. SiC coating in an ion implanter
US9642014B2 (en) 2014-06-09 2017-05-02 Nokomis, Inc. Non-contact electromagnetic illuminated detection of part anomalies for cyber physical security
US9613777B2 (en) 2014-09-11 2017-04-04 Varian Semiconductor Equipment Associates, Inc. Uniformity control using adjustable internal antennas
KR101798371B1 (ko) * 2016-04-27 2017-11-16 (주)브이앤아이솔루션 유도결합 플라즈마 처리장치의 가스공급구조
KR101798373B1 (ko) 2016-05-03 2017-11-17 (주)브이앤아이솔루션 유도결합 플라즈마 처리장치의 유전체창 지지구조
KR101798384B1 (ko) * 2016-05-03 2017-11-17 (주)브이앤아이솔루션 유도결합 플라즈마 처리장치의 rf 안테나 구조
KR101798374B1 (ko) * 2016-05-04 2017-11-17 (주)브이앤아이솔루션 유도결합 플라즈마 처리장치의 유전체창의 지지구조
KR101798376B1 (ko) * 2016-05-04 2017-12-12 (주)브이앤아이솔루션 유도결합 플라즈마 처리장치의 유전체창
GB201806783D0 (en) * 2018-04-25 2018-06-06 Spts Technologies Ltd A plasma generating arrangement
EP3748374B8 (en) 2019-06-06 2023-02-15 Rohde & Schwarz GmbH & Co. KG System and method for calibrating radio frequency test chambers

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001042099A (ja) 1999-07-28 2001-02-16 Toshiba Corp 高周波負イオン源
US20100066252A1 (en) 2008-04-18 2010-03-18 The Regents Of The University Of California Spiral rf-induction antenna based ion source for neutron generators

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100302167B1 (ko) 1993-11-05 2001-11-22 히가시 데쓰로 플라즈마처리장치및플라즈마처리방법
US5653811A (en) 1995-07-19 1997-08-05 Chan; Chung System for the plasma treatment of large area substrates
EP0756309A1 (en) * 1995-07-26 1997-01-29 Applied Materials, Inc. Plasma systems for processing substrates
US5824606A (en) 1996-03-29 1998-10-20 Lam Research Corporation Methods and apparatuses for controlling phase difference in plasma processing systems
JP2001023532A (ja) 1999-07-09 2001-01-26 Nissin Electric Co Ltd イオン源の制御方法およびイオンドーピング装置
US6451161B1 (en) * 2000-04-10 2002-09-17 Nano-Architect Research Corporation Method and apparatus for generating high-density uniform plasma
EP1753011B1 (de) 2005-08-13 2012-10-03 HÜTTINGER Elektronik GmbH + Co. KG Verfahren zur Erzeugung von Ansteuersignalen für HF-Leistungsgeneratoren
US20070137576A1 (en) 2005-12-19 2007-06-21 Varian Semiconductor Equipment Associates, Inc. Technique for providing an inductively coupled radio frequency plasma flood gun
US20090004836A1 (en) * 2007-06-29 2009-01-01 Varian Semiconductor Equipment Associates, Inc. Plasma doping with enhanced charge neutralization
JP5125447B2 (ja) * 2007-11-27 2013-01-23 株式会社島津製作所 イオンビーム処理装置
US20090139963A1 (en) 2007-11-30 2009-06-04 Theodoros Panagopoulos Multiple frequency pulsing of multiple coil source to control plasma ion density radial distribution
US7999479B2 (en) * 2009-04-16 2011-08-16 Varian Semiconductor Equipment Associates, Inc. Conjugated ICP and ECR plasma sources for wide ribbon ion beam generation and control
US8590485B2 (en) * 2010-04-26 2013-11-26 Varian Semiconductor Equipment Associates, Inc. Small form factor plasma source for high density wide ribbon ion beam generation

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001042099A (ja) 1999-07-28 2001-02-16 Toshiba Corp 高周波負イオン源
US20100066252A1 (en) 2008-04-18 2010-03-18 The Regents Of The University Of California Spiral rf-induction antenna based ion source for neutron generators

Also Published As

Publication number Publication date
US8809803B2 (en) 2014-08-19
TWI513375B (zh) 2015-12-11
KR20150042260A (ko) 2015-04-20
TW201408141A (zh) 2014-02-16
JP5832708B2 (ja) 2015-12-16
US20140042337A1 (en) 2014-02-13
WO2014028290A1 (en) 2014-02-20
JP2015524607A (ja) 2015-08-24
CN104885186B (zh) 2017-03-08
CN104885186A (zh) 2015-09-02

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