TWI513375B - 寬離子束用之具多天線電感性耦合電漿離子源 - Google Patents
寬離子束用之具多天線電感性耦合電漿離子源 Download PDFInfo
- Publication number
- TWI513375B TWI513375B TW102128759A TW102128759A TWI513375B TW I513375 B TWI513375 B TW I513375B TW 102128759 A TW102128759 A TW 102128759A TW 102128759 A TW102128759 A TW 102128759A TW I513375 B TWI513375 B TW I513375B
- Authority
- TW
- Taiwan
- Prior art keywords
- radio frequency
- source
- ion beam
- windows
- generating
- Prior art date
Links
- 238000010884 ion-beam technique Methods 0.000 title claims description 49
- 238000009616 inductively coupled plasma Methods 0.000 title description 5
- 238000000605 extraction Methods 0.000 claims description 15
- 210000002381 plasma Anatomy 0.000 description 75
- 150000002500 ions Chemical class 0.000 description 32
- 230000000694 effects Effects 0.000 description 17
- 239000007789 gas Substances 0.000 description 13
- 238000010586 diagram Methods 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- -1 alumina Chemical compound 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000010009 beating Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000010349 pulsation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/16—Ion sources; Ion guns using high-frequency excitation, e.g. microwave excitation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32422—Arrangement for selecting ions or species in the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
- H01J2237/0815—Methods of ionisation
- H01J2237/0817—Microwaves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
- H01J2237/31706—Ion implantation characterised by the area treated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Combustion & Propulsion (AREA)
- Electron Sources, Ion Sources (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261682356P | 2012-08-13 | 2012-08-13 | |
| US13/961,060 US8809803B2 (en) | 2012-08-13 | 2013-08-07 | Inductively coupled plasma ion source with multiple antennas for wide ion beam |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201408141A TW201408141A (zh) | 2014-02-16 |
| TWI513375B true TWI513375B (zh) | 2015-12-11 |
Family
ID=50065489
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102128759A TWI513375B (zh) | 2012-08-13 | 2013-08-12 | 寬離子束用之具多天線電感性耦合電漿離子源 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8809803B2 (enExample) |
| JP (1) | JP5832708B2 (enExample) |
| KR (1) | KR101615671B1 (enExample) |
| CN (1) | CN104885186B (enExample) |
| TW (1) | TWI513375B (enExample) |
| WO (1) | WO2014028290A1 (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5617817B2 (ja) * | 2011-10-27 | 2014-11-05 | パナソニック株式会社 | 誘導結合型プラズマ処理装置及び誘導結合型プラズマ処理方法 |
| US9384937B2 (en) * | 2013-09-27 | 2016-07-05 | Varian Semiconductor Equipment Associates, Inc. | SiC coating in an ion implanter |
| US9642014B2 (en) | 2014-06-09 | 2017-05-02 | Nokomis, Inc. | Non-contact electromagnetic illuminated detection of part anomalies for cyber physical security |
| US9613777B2 (en) | 2014-09-11 | 2017-04-04 | Varian Semiconductor Equipment Associates, Inc. | Uniformity control using adjustable internal antennas |
| KR101798371B1 (ko) * | 2016-04-27 | 2017-11-16 | (주)브이앤아이솔루션 | 유도결합 플라즈마 처리장치의 가스공급구조 |
| KR101798373B1 (ko) | 2016-05-03 | 2017-11-17 | (주)브이앤아이솔루션 | 유도결합 플라즈마 처리장치의 유전체창 지지구조 |
| KR101798384B1 (ko) * | 2016-05-03 | 2017-11-17 | (주)브이앤아이솔루션 | 유도결합 플라즈마 처리장치의 rf 안테나 구조 |
| KR101798374B1 (ko) * | 2016-05-04 | 2017-11-17 | (주)브이앤아이솔루션 | 유도결합 플라즈마 처리장치의 유전체창의 지지구조 |
| KR101798376B1 (ko) * | 2016-05-04 | 2017-12-12 | (주)브이앤아이솔루션 | 유도결합 플라즈마 처리장치의 유전체창 |
| GB201806783D0 (en) * | 2018-04-25 | 2018-06-06 | Spts Technologies Ltd | A plasma generating arrangement |
| EP3748374B8 (en) | 2019-06-06 | 2023-02-15 | Rohde & Schwarz GmbH & Co. KG | System and method for calibrating radio frequency test chambers |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6451161B1 (en) * | 2000-04-10 | 2002-09-17 | Nano-Architect Research Corporation | Method and apparatus for generating high-density uniform plasma |
| TW200746929A (en) * | 2005-12-19 | 2007-12-16 | Varian Semiconductor Equipment | Technique for providing an inductively coupled radio frequency plasma flood gun |
| US20090001890A1 (en) * | 2007-06-29 | 2009-01-01 | Varian Semiconductor Equipment Associates, Inc. | Apparatus for Plasma Processing a Substrate and a Method Thereof |
| JP2009129817A (ja) * | 2007-11-27 | 2009-06-11 | Shimadzu Corp | イオンビーム処理装置 |
| TW201142894A (en) * | 2010-04-26 | 2011-12-01 | Varian Semiconductor Equipment | Inductively coupled plasma source for extracting ribbob ion beam |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100302167B1 (ko) | 1993-11-05 | 2001-11-22 | 히가시 데쓰로 | 플라즈마처리장치및플라즈마처리방법 |
| US5653811A (en) | 1995-07-19 | 1997-08-05 | Chan; Chung | System for the plasma treatment of large area substrates |
| EP0756309A1 (en) * | 1995-07-26 | 1997-01-29 | Applied Materials, Inc. | Plasma systems for processing substrates |
| US5824606A (en) | 1996-03-29 | 1998-10-20 | Lam Research Corporation | Methods and apparatuses for controlling phase difference in plasma processing systems |
| JP2001023532A (ja) | 1999-07-09 | 2001-01-26 | Nissin Electric Co Ltd | イオン源の制御方法およびイオンドーピング装置 |
| JP2001042099A (ja) | 1999-07-28 | 2001-02-16 | Toshiba Corp | 高周波負イオン源 |
| EP1753011B1 (de) | 2005-08-13 | 2012-10-03 | HÜTTINGER Elektronik GmbH + Co. KG | Verfahren zur Erzeugung von Ansteuersignalen für HF-Leistungsgeneratoren |
| US20090139963A1 (en) | 2007-11-30 | 2009-06-04 | Theodoros Panagopoulos | Multiple frequency pulsing of multiple coil source to control plasma ion density radial distribution |
| US20100066252A1 (en) | 2008-04-18 | 2010-03-18 | The Regents Of The University Of California | Spiral rf-induction antenna based ion source for neutron generators |
| US7999479B2 (en) * | 2009-04-16 | 2011-08-16 | Varian Semiconductor Equipment Associates, Inc. | Conjugated ICP and ECR plasma sources for wide ribbon ion beam generation and control |
-
2013
- 2013-08-07 US US13/961,060 patent/US8809803B2/en active Active
- 2013-08-08 WO PCT/US2013/054056 patent/WO2014028290A1/en not_active Ceased
- 2013-08-08 KR KR1020157006237A patent/KR101615671B1/ko active Active
- 2013-08-08 CN CN201380049073.3A patent/CN104885186B/zh active Active
- 2013-08-08 JP JP2015526691A patent/JP5832708B2/ja active Active
- 2013-08-12 TW TW102128759A patent/TWI513375B/zh active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6451161B1 (en) * | 2000-04-10 | 2002-09-17 | Nano-Architect Research Corporation | Method and apparatus for generating high-density uniform plasma |
| TW200746929A (en) * | 2005-12-19 | 2007-12-16 | Varian Semiconductor Equipment | Technique for providing an inductively coupled radio frequency plasma flood gun |
| US20090001890A1 (en) * | 2007-06-29 | 2009-01-01 | Varian Semiconductor Equipment Associates, Inc. | Apparatus for Plasma Processing a Substrate and a Method Thereof |
| JP2009129817A (ja) * | 2007-11-27 | 2009-06-11 | Shimadzu Corp | イオンビーム処理装置 |
| TW201142894A (en) * | 2010-04-26 | 2011-12-01 | Varian Semiconductor Equipment | Inductively coupled plasma source for extracting ribbob ion beam |
Also Published As
| Publication number | Publication date |
|---|---|
| US8809803B2 (en) | 2014-08-19 |
| KR101615671B1 (ko) | 2016-04-26 |
| KR20150042260A (ko) | 2015-04-20 |
| TW201408141A (zh) | 2014-02-16 |
| JP5832708B2 (ja) | 2015-12-16 |
| US20140042337A1 (en) | 2014-02-13 |
| WO2014028290A1 (en) | 2014-02-20 |
| JP2015524607A (ja) | 2015-08-24 |
| CN104885186B (zh) | 2017-03-08 |
| CN104885186A (zh) | 2015-09-02 |
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