JP2015524607A5 - - Google Patents

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Publication number
JP2015524607A5
JP2015524607A5 JP2015526691A JP2015526691A JP2015524607A5 JP 2015524607 A5 JP2015524607 A5 JP 2015524607A5 JP 2015526691 A JP2015526691 A JP 2015526691A JP 2015526691 A JP2015526691 A JP 2015526691A JP 2015524607 A5 JP2015524607 A5 JP 2015524607A5
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JP
Japan
Prior art keywords
ion beam
source
antenna
windows
sources
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JP2015526691A
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English (en)
Japanese (ja)
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JP5832708B2 (ja
JP2015524607A (ja
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Priority claimed from US13/961,060 external-priority patent/US8809803B2/en
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Publication of JP2015524607A publication Critical patent/JP2015524607A/ja
Publication of JP2015524607A5 publication Critical patent/JP2015524607A5/ja
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Publication of JP5832708B2 publication Critical patent/JP5832708B2/ja
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JP2015526691A 2012-08-13 2013-08-08 複数の広幅イオンビーム用アンテナを有する誘導結合プラズマイオン源 Active JP5832708B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261682356P 2012-08-13 2012-08-13
US61/682,356 2012-08-13
US13/961,060 US8809803B2 (en) 2012-08-13 2013-08-07 Inductively coupled plasma ion source with multiple antennas for wide ion beam
US13/961,060 2013-08-07
PCT/US2013/054056 WO2014028290A1 (en) 2012-08-13 2013-08-08 Inductively coupled plasma ion source with multiple antennas for wide ion beam

Publications (3)

Publication Number Publication Date
JP2015524607A JP2015524607A (ja) 2015-08-24
JP2015524607A5 true JP2015524607A5 (enExample) 2015-11-05
JP5832708B2 JP5832708B2 (ja) 2015-12-16

Family

ID=50065489

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015526691A Active JP5832708B2 (ja) 2012-08-13 2013-08-08 複数の広幅イオンビーム用アンテナを有する誘導結合プラズマイオン源

Country Status (6)

Country Link
US (1) US8809803B2 (enExample)
JP (1) JP5832708B2 (enExample)
KR (1) KR101615671B1 (enExample)
CN (1) CN104885186B (enExample)
TW (1) TWI513375B (enExample)
WO (1) WO2014028290A1 (enExample)

Families Citing this family (11)

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Publication number Priority date Publication date Assignee Title
JP5617817B2 (ja) * 2011-10-27 2014-11-05 パナソニック株式会社 誘導結合型プラズマ処理装置及び誘導結合型プラズマ処理方法
US9384937B2 (en) * 2013-09-27 2016-07-05 Varian Semiconductor Equipment Associates, Inc. SiC coating in an ion implanter
US9642014B2 (en) 2014-06-09 2017-05-02 Nokomis, Inc. Non-contact electromagnetic illuminated detection of part anomalies for cyber physical security
US9613777B2 (en) 2014-09-11 2017-04-04 Varian Semiconductor Equipment Associates, Inc. Uniformity control using adjustable internal antennas
KR101798371B1 (ko) * 2016-04-27 2017-11-16 (주)브이앤아이솔루션 유도결합 플라즈마 처리장치의 가스공급구조
KR101798373B1 (ko) 2016-05-03 2017-11-17 (주)브이앤아이솔루션 유도결합 플라즈마 처리장치의 유전체창 지지구조
KR101798384B1 (ko) * 2016-05-03 2017-11-17 (주)브이앤아이솔루션 유도결합 플라즈마 처리장치의 rf 안테나 구조
KR101798374B1 (ko) * 2016-05-04 2017-11-17 (주)브이앤아이솔루션 유도결합 플라즈마 처리장치의 유전체창의 지지구조
KR101798376B1 (ko) * 2016-05-04 2017-12-12 (주)브이앤아이솔루션 유도결합 플라즈마 처리장치의 유전체창
GB201806783D0 (en) * 2018-04-25 2018-06-06 Spts Technologies Ltd A plasma generating arrangement
EP3748374B8 (en) 2019-06-06 2023-02-15 Rohde & Schwarz GmbH & Co. KG System and method for calibrating radio frequency test chambers

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100302167B1 (ko) 1993-11-05 2001-11-22 히가시 데쓰로 플라즈마처리장치및플라즈마처리방법
US5653811A (en) 1995-07-19 1997-08-05 Chan; Chung System for the plasma treatment of large area substrates
EP0756309A1 (en) * 1995-07-26 1997-01-29 Applied Materials, Inc. Plasma systems for processing substrates
US5824606A (en) 1996-03-29 1998-10-20 Lam Research Corporation Methods and apparatuses for controlling phase difference in plasma processing systems
JP2001023532A (ja) 1999-07-09 2001-01-26 Nissin Electric Co Ltd イオン源の制御方法およびイオンドーピング装置
JP2001042099A (ja) 1999-07-28 2001-02-16 Toshiba Corp 高周波負イオン源
US6451161B1 (en) * 2000-04-10 2002-09-17 Nano-Architect Research Corporation Method and apparatus for generating high-density uniform plasma
EP1753011B1 (de) 2005-08-13 2012-10-03 HÜTTINGER Elektronik GmbH + Co. KG Verfahren zur Erzeugung von Ansteuersignalen für HF-Leistungsgeneratoren
US20070137576A1 (en) 2005-12-19 2007-06-21 Varian Semiconductor Equipment Associates, Inc. Technique for providing an inductively coupled radio frequency plasma flood gun
US20090004836A1 (en) * 2007-06-29 2009-01-01 Varian Semiconductor Equipment Associates, Inc. Plasma doping with enhanced charge neutralization
JP5125447B2 (ja) * 2007-11-27 2013-01-23 株式会社島津製作所 イオンビーム処理装置
US20090139963A1 (en) 2007-11-30 2009-06-04 Theodoros Panagopoulos Multiple frequency pulsing of multiple coil source to control plasma ion density radial distribution
US20100066252A1 (en) 2008-04-18 2010-03-18 The Regents Of The University Of California Spiral rf-induction antenna based ion source for neutron generators
US7999479B2 (en) * 2009-04-16 2011-08-16 Varian Semiconductor Equipment Associates, Inc. Conjugated ICP and ECR plasma sources for wide ribbon ion beam generation and control
US8590485B2 (en) * 2010-04-26 2013-11-26 Varian Semiconductor Equipment Associates, Inc. Small form factor plasma source for high density wide ribbon ion beam generation

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