JP5826185B2 - 可変マイクロ波回路および可調プラズマアッシング装置 - Google Patents
可変マイクロ波回路および可調プラズマアッシング装置 Download PDFInfo
- Publication number
- JP5826185B2 JP5826185B2 JP2012539867A JP2012539867A JP5826185B2 JP 5826185 B2 JP5826185 B2 JP 5826185B2 JP 2012539867 A JP2012539867 A JP 2012539867A JP 2012539867 A JP2012539867 A JP 2012539867A JP 5826185 B2 JP5826185 B2 JP 5826185B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- waveguide
- plasma
- microwave
- core
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32229—Waveguides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32247—Resonators
- H01J37/32256—Tuning means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32311—Circuits specially adapted for controlling the microwave discharge
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/621,136 | 2009-11-18 | ||
| US12/621,136 US8906195B2 (en) | 2009-11-18 | 2009-11-18 | Tuning hardware for plasma ashing apparatus and methods of use thereof |
| PCT/US2010/002972 WO2011062610A1 (en) | 2009-11-18 | 2010-11-12 | Tuning hardware for plasma ashing apparatus and methods of use thereof |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013511807A JP2013511807A (ja) | 2013-04-04 |
| JP2013511807A5 JP2013511807A5 (enExample) | 2013-12-26 |
| JP5826185B2 true JP5826185B2 (ja) | 2015-12-02 |
Family
ID=43629291
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012539867A Active JP5826185B2 (ja) | 2009-11-18 | 2010-11-12 | 可変マイクロ波回路および可調プラズマアッシング装置 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8906195B2 (enExample) |
| EP (1) | EP2502256A1 (enExample) |
| JP (1) | JP5826185B2 (enExample) |
| KR (1) | KR101833555B1 (enExample) |
| CN (1) | CN102598202B (enExample) |
| TW (1) | TWI492265B (enExample) |
| WO (1) | WO2011062610A1 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8576013B2 (en) * | 2011-12-29 | 2013-11-05 | Mks Instruments, Inc. | Power distortion-based servo control systems for frequency tuning RF power sources |
| US20140263179A1 (en) * | 2013-03-15 | 2014-09-18 | Lam Research Corporation | Tuning system and method for plasma-based substrate processing systems |
| JP6643034B2 (ja) * | 2015-10-09 | 2020-02-12 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| WO2017190793A1 (en) * | 2016-05-06 | 2017-11-09 | Arcelik Anonim Sirketi | Cooking appliance with a microwave heating function |
| KR101967903B1 (ko) * | 2017-10-16 | 2019-04-10 | 유니온테크 주식회사 | 마이크로웨이브 발진모듈과 이를 포함하는 마이크로웨이브를 이용한 농산물 건조 장치 및 이에 의해 건조된 건조 농산물 |
| US10217654B1 (en) * | 2018-02-12 | 2019-02-26 | Varian Semiconductor Equipment Associates, Inc. | Embedded features for interlocks using additive manufacturing |
| CN116145119B (zh) * | 2023-02-01 | 2025-01-24 | 锐光信通科技有限公司 | 一种用于气相沉积的微波谐振腔 |
| CN116581509A (zh) * | 2023-04-25 | 2023-08-11 | 散裂中子源科学中心 | 一种耦合度在线可调的波导型高功率耦合器 |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4585668A (en) * | 1983-02-28 | 1986-04-29 | Michigan State University | Method for treating a surface with a microwave or UHF plasma and improved apparatus |
| US4689459A (en) * | 1985-09-09 | 1987-08-25 | Gerling John E | Variable Q microwave applicator and method |
| US4851630A (en) * | 1988-06-23 | 1989-07-25 | Applied Science & Technology, Inc. | Microwave reactive gas generator |
| JP2986166B2 (ja) * | 1989-01-30 | 1999-12-06 | 株式会社ダイヘン | マイクロ波回路のインピーダンス自動調整装置及びインピーダンス自動調整方法 |
| US4943345A (en) * | 1989-03-23 | 1990-07-24 | Board Of Trustees Operating Michigan State University | Plasma reactor apparatus and method for treating a substrate |
| US5262610A (en) * | 1991-03-29 | 1993-11-16 | The United States Of America As Represented By The Air Force | Low particulate reliability enhanced remote microwave plasma discharge device |
| JPH06231711A (ja) | 1993-02-02 | 1994-08-19 | Nissin Electric Co Ltd | マイクロ波イオン源装置における整合方法 |
| US5387288A (en) * | 1993-05-14 | 1995-02-07 | Modular Process Technology Corp. | Apparatus for depositing diamond and refractory materials comprising rotating antenna |
| US5498308A (en) * | 1994-02-25 | 1996-03-12 | Fusion Systems Corp. | Plasma asher with microwave trap |
| US6132550A (en) * | 1995-08-11 | 2000-10-17 | Sumitomo Electric Industries, Ltd. | Apparatuses for desposition or etching |
| FR2757082B1 (fr) * | 1996-12-13 | 1999-01-15 | Air Liquide | Procede d'epuration d'un gaz plasmagene et installation pour la mise en oeuvre d'un tel procede |
| US6016766A (en) * | 1997-12-29 | 2000-01-25 | Lam Research Corporation | Microwave plasma processor |
| US6057645A (en) * | 1997-12-31 | 2000-05-02 | Eaton Corporation | Plasma discharge device with dynamic tuning by a movable microwave trap |
| JP3979453B2 (ja) * | 1998-01-14 | 2007-09-19 | 東京エレクトロン株式会社 | マイクロ波プラズマ処理装置 |
| US6066992A (en) * | 1998-08-12 | 2000-05-23 | Hughes Electronics Corporation | Variable ISO attenuator using absorptive/reflective elements and latching |
| US6263830B1 (en) * | 1999-04-12 | 2001-07-24 | Matrix Integrated Systems, Inc. | Microwave choke for remote plasma generator |
| JP4678905B2 (ja) * | 1999-12-20 | 2011-04-27 | 徳芳 佐藤 | プラズマ処理装置 |
| US6261525B1 (en) * | 2000-05-17 | 2001-07-17 | Bruce Minaee | Process gas decomposition reactor |
| JP3969081B2 (ja) * | 2001-12-14 | 2007-08-29 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP4588329B2 (ja) * | 2003-02-14 | 2010-12-01 | 東京エレクトロン株式会社 | プラズマ発生装置およびリモートプラズマ処理装置 |
| CN100570805C (zh) * | 2003-09-22 | 2009-12-16 | Mks仪器股份有限公司 | 避免射频等离子加工中的不稳定性的方法和装置 |
| JP5213150B2 (ja) * | 2005-08-12 | 2013-06-19 | 国立大学法人東北大学 | プラズマ処理装置及びプラズマ処理装置を用いた製品の製造方法 |
| US7589470B2 (en) * | 2006-01-31 | 2009-09-15 | Dublin City University | Method and apparatus for producing plasma |
| WO2008032856A2 (en) * | 2006-09-13 | 2008-03-20 | Noritsu Koki Co., Ltd. | Plasma generator and work processing apparatus provided with the same |
| GB2459461B (en) | 2008-04-23 | 2012-08-01 | Creo Medical Ltd | A non-thermal microwave plasma sterilisation system using automatic tuning contained within the hand-piece of the applicator |
| JP2010027588A (ja) * | 2008-06-18 | 2010-02-04 | Tokyo Electron Ltd | マイクロ波プラズマ処理装置及び給電方法 |
-
2009
- 2009-11-18 US US12/621,136 patent/US8906195B2/en not_active Expired - Fee Related
-
2010
- 2010-11-12 CN CN201080051372.7A patent/CN102598202B/zh active Active
- 2010-11-12 TW TW099138964A patent/TWI492265B/zh active
- 2010-11-12 KR KR1020127015178A patent/KR101833555B1/ko active Active
- 2010-11-12 EP EP10787594A patent/EP2502256A1/en not_active Withdrawn
- 2010-11-12 JP JP2012539867A patent/JP5826185B2/ja active Active
- 2010-11-12 WO PCT/US2010/002972 patent/WO2011062610A1/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| US20110114115A1 (en) | 2011-05-19 |
| US8906195B2 (en) | 2014-12-09 |
| CN102598202A (zh) | 2012-07-18 |
| KR20120095972A (ko) | 2012-08-29 |
| JP2013511807A (ja) | 2013-04-04 |
| TW201142912A (en) | 2011-12-01 |
| WO2011062610A1 (en) | 2011-05-26 |
| KR101833555B1 (ko) | 2018-02-28 |
| EP2502256A1 (en) | 2012-09-26 |
| TWI492265B (zh) | 2015-07-11 |
| CN102598202B (zh) | 2015-10-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5826185B2 (ja) | 可変マイクロ波回路および可調プラズマアッシング装置 | |
| JP7187500B2 (ja) | 自己共振装置を備えたプラズマ点火装置および方法 | |
| US6069092A (en) | Dry etching method and semiconductor device fabrication method | |
| US6388226B1 (en) | Toroidal low-field reactive gas source | |
| US20100098882A1 (en) | Plasma source for chamber cleaning and process | |
| JP2014057057A (ja) | 増強プラズマ処理システム内でのプラズマ強化エッチング | |
| WO2008020267A2 (en) | Etch method in the manufacture of an integrated circuit | |
| JP2016029714A (ja) | 基板の高精度エッチングのプラズマ処理方法 | |
| CN104662636A (zh) | 离子源的效能改善与延伸生命期的技术 | |
| US6082374A (en) | Fluorine assisted stripping and residue removal in sapphire downstream plasma asher | |
| WO1998014036A9 (en) | Fluorine assisted stripping and residue removal in sapphire downstream plasma asher | |
| JP2018006664A (ja) | プラズマ処理装置およびプラズマ処理方法 | |
| US20230059730A1 (en) | Atomic-scale materials processing based on electron beam induced etching assisted by remote plasma | |
| US20160233055A1 (en) | Apparatus and Method for Metastable Enhanced Plasma Ignition | |
| KR0140089Y1 (ko) | 마이크로파 전달장치 | |
| KR101450757B1 (ko) | 이종 플라즈마 다중 연결을 이용한 플라즈마 공정 장치 및 이를 이용한 방법 | |
| TW201639028A (zh) | 基板之高精度蝕刻用方法及系統 | |
| KR20030097080A (ko) | 반도체 애싱설비의 전극 고정장치 | |
| KR20010028142A (ko) | 고밀도 플라즈마를 이용한 이방성 실리콘 식각 방법 | |
| JP2007043079A (ja) | プラズマ発生装置、プラズマ発生方法及びプラズマ処理装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20130806 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20131111 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20131111 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20141023 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20141104 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150204 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20150623 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150811 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150915 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20151013 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 5826185 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |