TWI492265B - 用於剝除來自基板之光阻劑、聚合物及/或殘留物之可調諧電漿灰化設備及其可變微波電路 - Google Patents
用於剝除來自基板之光阻劑、聚合物及/或殘留物之可調諧電漿灰化設備及其可變微波電路 Download PDFInfo
- Publication number
- TWI492265B TWI492265B TW099138964A TW99138964A TWI492265B TW I492265 B TWI492265 B TW I492265B TW 099138964 A TW099138964 A TW 099138964A TW 99138964 A TW99138964 A TW 99138964A TW I492265 B TWI492265 B TW I492265B
- Authority
- TW
- Taiwan
- Prior art keywords
- waveguide
- gas
- plasma
- microwave
- plasma ashing
- Prior art date
Links
- 238000004380 ashing Methods 0.000 title claims description 75
- 239000000758 substrate Substances 0.000 title claims description 23
- 229920002120 photoresistant polymer Polymers 0.000 title claims description 6
- 229920000642 polymer Polymers 0.000 title claims description 5
- 239000007789 gas Substances 0.000 claims description 120
- 238000000034 method Methods 0.000 claims description 49
- 230000008569 process Effects 0.000 claims description 46
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 14
- 229910052731 fluorine Inorganic materials 0.000 claims description 14
- 239000011737 fluorine Substances 0.000 claims description 14
- 230000008859 change Effects 0.000 claims description 12
- 239000011261 inert gas Substances 0.000 claims description 6
- 230000004044 response Effects 0.000 claims description 6
- 230000001590 oxidative effect Effects 0.000 claims description 5
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 3
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 2
- DMFGNRRURHSENX-UHFFFAOYSA-N beryllium copper Chemical compound [Be].[Cu] DMFGNRRURHSENX-UHFFFAOYSA-N 0.000 claims description 2
- 239000000203 mixture Substances 0.000 description 45
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 26
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 18
- 238000003780 insertion Methods 0.000 description 16
- 230000037431 insertion Effects 0.000 description 16
- 238000004891 communication Methods 0.000 description 14
- 239000001257 hydrogen Substances 0.000 description 13
- 229910052739 hydrogen Inorganic materials 0.000 description 13
- 239000001272 nitrous oxide Substances 0.000 description 13
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 9
- 229910052757 nitrogen Inorganic materials 0.000 description 9
- 150000001875 compounds Chemical class 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 4
- 239000001307 helium Substances 0.000 description 4
- 229910052734 helium Inorganic materials 0.000 description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 238000005457 optimization Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 2
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- -1 dimethyl Alkylamine Chemical class 0.000 description 2
- LZDSILRDTDCIQT-UHFFFAOYSA-N dinitrogen trioxide Chemical compound [O-][N+](=O)N=O LZDSILRDTDCIQT-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- LELOWRISYMNNSU-UHFFFAOYSA-N hydrogen cyanide Chemical compound N#C LELOWRISYMNNSU-UHFFFAOYSA-N 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052754 neon Inorganic materials 0.000 description 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 2
- JMANVNJQNLATNU-UHFFFAOYSA-N oxalonitrile Chemical compound N#CC#N JMANVNJQNLATNU-UHFFFAOYSA-N 0.000 description 2
- 230000000135 prohibitive effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 1
- 239000004157 Nitrosyl chloride Substances 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 230000001364 causal effect Effects 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- QPJDMGCKMHUXFD-UHFFFAOYSA-N cyanogen chloride Chemical compound ClC#N QPJDMGCKMHUXFD-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- VUZPPFZMUPKLLV-UHFFFAOYSA-N methane;hydrate Chemical compound C.O VUZPPFZMUPKLLV-UHFFFAOYSA-N 0.000 description 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
- VPCDQGACGWYTMC-UHFFFAOYSA-N nitrosyl chloride Chemical compound ClN=O VPCDQGACGWYTMC-UHFFFAOYSA-N 0.000 description 1
- 235000019392 nitrosyl chloride Nutrition 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910001868 water Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32229—Waveguides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32247—Resonators
- H01J37/32256—Tuning means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32311—Circuits specially adapted for controlling the microwave discharge
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/621,136 US8906195B2 (en) | 2009-11-18 | 2009-11-18 | Tuning hardware for plasma ashing apparatus and methods of use thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201142912A TW201142912A (en) | 2011-12-01 |
| TWI492265B true TWI492265B (zh) | 2015-07-11 |
Family
ID=43629291
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099138964A TWI492265B (zh) | 2009-11-18 | 2010-11-12 | 用於剝除來自基板之光阻劑、聚合物及/或殘留物之可調諧電漿灰化設備及其可變微波電路 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8906195B2 (enExample) |
| EP (1) | EP2502256A1 (enExample) |
| JP (1) | JP5826185B2 (enExample) |
| KR (1) | KR101833555B1 (enExample) |
| CN (1) | CN102598202B (enExample) |
| TW (1) | TWI492265B (enExample) |
| WO (1) | WO2011062610A1 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8576013B2 (en) * | 2011-12-29 | 2013-11-05 | Mks Instruments, Inc. | Power distortion-based servo control systems for frequency tuning RF power sources |
| US20140263179A1 (en) * | 2013-03-15 | 2014-09-18 | Lam Research Corporation | Tuning system and method for plasma-based substrate processing systems |
| JP6643034B2 (ja) * | 2015-10-09 | 2020-02-12 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| WO2017190793A1 (en) * | 2016-05-06 | 2017-11-09 | Arcelik Anonim Sirketi | Cooking appliance with a microwave heating function |
| KR101967903B1 (ko) * | 2017-10-16 | 2019-04-10 | 유니온테크 주식회사 | 마이크로웨이브 발진모듈과 이를 포함하는 마이크로웨이브를 이용한 농산물 건조 장치 및 이에 의해 건조된 건조 농산물 |
| US10217654B1 (en) * | 2018-02-12 | 2019-02-26 | Varian Semiconductor Equipment Associates, Inc. | Embedded features for interlocks using additive manufacturing |
| CN116145119B (zh) * | 2023-02-01 | 2025-01-24 | 锐光信通科技有限公司 | 一种用于气相沉积的微波谐振腔 |
| CN116581509A (zh) * | 2023-04-25 | 2023-08-11 | 散裂中子源科学中心 | 一种耦合度在线可调的波导型高功率耦合器 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6132550A (en) * | 1995-08-11 | 2000-10-17 | Sumitomo Electric Industries, Ltd. | Apparatuses for desposition or etching |
| CN1322559C (zh) * | 2001-12-14 | 2007-06-20 | 东京毅力科创株式会社 | 等离子体处理装置 |
| TW200733822A (en) * | 2005-08-12 | 2007-09-01 | Univ Tohoku | Plasma processing apparatus |
| TW200830945A (en) * | 2006-09-13 | 2008-07-16 | Noritsu Koki Co Ltd | Plasma generator and work processing apparatus provided with the same |
| GB2459461A (en) * | 2008-04-23 | 2009-10-28 | Microoncology Ltd | A non-thermal microwave plasma sterilisation system using automatic tuning |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4585668A (en) * | 1983-02-28 | 1986-04-29 | Michigan State University | Method for treating a surface with a microwave or UHF plasma and improved apparatus |
| US4689459A (en) * | 1985-09-09 | 1987-08-25 | Gerling John E | Variable Q microwave applicator and method |
| US4851630A (en) * | 1988-06-23 | 1989-07-25 | Applied Science & Technology, Inc. | Microwave reactive gas generator |
| JP2986166B2 (ja) * | 1989-01-30 | 1999-12-06 | 株式会社ダイヘン | マイクロ波回路のインピーダンス自動調整装置及びインピーダンス自動調整方法 |
| US4943345A (en) * | 1989-03-23 | 1990-07-24 | Board Of Trustees Operating Michigan State University | Plasma reactor apparatus and method for treating a substrate |
| US5262610A (en) * | 1991-03-29 | 1993-11-16 | The United States Of America As Represented By The Air Force | Low particulate reliability enhanced remote microwave plasma discharge device |
| JPH06231711A (ja) | 1993-02-02 | 1994-08-19 | Nissin Electric Co Ltd | マイクロ波イオン源装置における整合方法 |
| US5387288A (en) * | 1993-05-14 | 1995-02-07 | Modular Process Technology Corp. | Apparatus for depositing diamond and refractory materials comprising rotating antenna |
| US5498308A (en) * | 1994-02-25 | 1996-03-12 | Fusion Systems Corp. | Plasma asher with microwave trap |
| FR2757082B1 (fr) * | 1996-12-13 | 1999-01-15 | Air Liquide | Procede d'epuration d'un gaz plasmagene et installation pour la mise en oeuvre d'un tel procede |
| US6016766A (en) * | 1997-12-29 | 2000-01-25 | Lam Research Corporation | Microwave plasma processor |
| US6057645A (en) * | 1997-12-31 | 2000-05-02 | Eaton Corporation | Plasma discharge device with dynamic tuning by a movable microwave trap |
| JP3979453B2 (ja) * | 1998-01-14 | 2007-09-19 | 東京エレクトロン株式会社 | マイクロ波プラズマ処理装置 |
| US6066992A (en) * | 1998-08-12 | 2000-05-23 | Hughes Electronics Corporation | Variable ISO attenuator using absorptive/reflective elements and latching |
| US6263830B1 (en) * | 1999-04-12 | 2001-07-24 | Matrix Integrated Systems, Inc. | Microwave choke for remote plasma generator |
| JP4678905B2 (ja) * | 1999-12-20 | 2011-04-27 | 徳芳 佐藤 | プラズマ処理装置 |
| US6261525B1 (en) * | 2000-05-17 | 2001-07-17 | Bruce Minaee | Process gas decomposition reactor |
| JP4588329B2 (ja) * | 2003-02-14 | 2010-12-01 | 東京エレクトロン株式会社 | プラズマ発生装置およびリモートプラズマ処理装置 |
| CN100570805C (zh) * | 2003-09-22 | 2009-12-16 | Mks仪器股份有限公司 | 避免射频等离子加工中的不稳定性的方法和装置 |
| US7589470B2 (en) * | 2006-01-31 | 2009-09-15 | Dublin City University | Method and apparatus for producing plasma |
| JP2010027588A (ja) * | 2008-06-18 | 2010-02-04 | Tokyo Electron Ltd | マイクロ波プラズマ処理装置及び給電方法 |
-
2009
- 2009-11-18 US US12/621,136 patent/US8906195B2/en not_active Expired - Fee Related
-
2010
- 2010-11-12 CN CN201080051372.7A patent/CN102598202B/zh active Active
- 2010-11-12 TW TW099138964A patent/TWI492265B/zh active
- 2010-11-12 KR KR1020127015178A patent/KR101833555B1/ko active Active
- 2010-11-12 EP EP10787594A patent/EP2502256A1/en not_active Withdrawn
- 2010-11-12 JP JP2012539867A patent/JP5826185B2/ja active Active
- 2010-11-12 WO PCT/US2010/002972 patent/WO2011062610A1/en not_active Ceased
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6132550A (en) * | 1995-08-11 | 2000-10-17 | Sumitomo Electric Industries, Ltd. | Apparatuses for desposition or etching |
| CN1322559C (zh) * | 2001-12-14 | 2007-06-20 | 东京毅力科创株式会社 | 等离子体处理装置 |
| TW200733822A (en) * | 2005-08-12 | 2007-09-01 | Univ Tohoku | Plasma processing apparatus |
| TW200830945A (en) * | 2006-09-13 | 2008-07-16 | Noritsu Koki Co Ltd | Plasma generator and work processing apparatus provided with the same |
| GB2459461A (en) * | 2008-04-23 | 2009-10-28 | Microoncology Ltd | A non-thermal microwave plasma sterilisation system using automatic tuning |
Also Published As
| Publication number | Publication date |
|---|---|
| US20110114115A1 (en) | 2011-05-19 |
| US8906195B2 (en) | 2014-12-09 |
| CN102598202A (zh) | 2012-07-18 |
| KR20120095972A (ko) | 2012-08-29 |
| JP2013511807A (ja) | 2013-04-04 |
| TW201142912A (en) | 2011-12-01 |
| WO2011062610A1 (en) | 2011-05-26 |
| JP5826185B2 (ja) | 2015-12-02 |
| KR101833555B1 (ko) | 2018-02-28 |
| EP2502256A1 (en) | 2012-09-26 |
| CN102598202B (zh) | 2015-10-07 |
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