KR101833555B1 - 플라즈마 애싱 장치용 튜닝 하드웨어 및 이 튜닝 하드웨어의 이용 방법 - Google Patents

플라즈마 애싱 장치용 튜닝 하드웨어 및 이 튜닝 하드웨어의 이용 방법 Download PDF

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KR101833555B1
KR101833555B1 KR1020127015178A KR20127015178A KR101833555B1 KR 101833555 B1 KR101833555 B1 KR 101833555B1 KR 1020127015178 A KR1020127015178 A KR 1020127015178A KR 20127015178 A KR20127015178 A KR 20127015178A KR 101833555 B1 KR101833555 B1 KR 101833555B1
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waveguide
plasma
actuator
core
microwave
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KR20120095972A (ko
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아셈 스리바스타바
로버트 코울리아드
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램 리써치 코포레이션
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32229—Waveguides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32247—Resonators
    • H01J37/32256—Tuning means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32311—Circuits specially adapted for controlling the microwave discharge

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020127015178A 2009-11-18 2010-11-12 플라즈마 애싱 장치용 튜닝 하드웨어 및 이 튜닝 하드웨어의 이용 방법 Active KR101833555B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/621,136 2009-11-18
US12/621,136 US8906195B2 (en) 2009-11-18 2009-11-18 Tuning hardware for plasma ashing apparatus and methods of use thereof
PCT/US2010/002972 WO2011062610A1 (en) 2009-11-18 2010-11-12 Tuning hardware for plasma ashing apparatus and methods of use thereof

Publications (2)

Publication Number Publication Date
KR20120095972A KR20120095972A (ko) 2012-08-29
KR101833555B1 true KR101833555B1 (ko) 2018-02-28

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KR1020127015178A Active KR101833555B1 (ko) 2009-11-18 2010-11-12 플라즈마 애싱 장치용 튜닝 하드웨어 및 이 튜닝 하드웨어의 이용 방법

Country Status (7)

Country Link
US (1) US8906195B2 (enExample)
EP (1) EP2502256A1 (enExample)
JP (1) JP5826185B2 (enExample)
KR (1) KR101833555B1 (enExample)
CN (1) CN102598202B (enExample)
TW (1) TWI492265B (enExample)
WO (1) WO2011062610A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8576013B2 (en) * 2011-12-29 2013-11-05 Mks Instruments, Inc. Power distortion-based servo control systems for frequency tuning RF power sources
US20140263179A1 (en) * 2013-03-15 2014-09-18 Lam Research Corporation Tuning system and method for plasma-based substrate processing systems
JP6643034B2 (ja) * 2015-10-09 2020-02-12 東京エレクトロン株式会社 プラズマ処理装置
WO2017190793A1 (en) * 2016-05-06 2017-11-09 Arcelik Anonim Sirketi Cooking appliance with a microwave heating function
KR101967903B1 (ko) * 2017-10-16 2019-04-10 유니온테크 주식회사 마이크로웨이브 발진모듈과 이를 포함하는 마이크로웨이브를 이용한 농산물 건조 장치 및 이에 의해 건조된 건조 농산물
US10217654B1 (en) * 2018-02-12 2019-02-26 Varian Semiconductor Equipment Associates, Inc. Embedded features for interlocks using additive manufacturing
CN116145119B (zh) * 2023-02-01 2025-01-24 锐光信通科技有限公司 一种用于气相沉积的微波谐振腔
CN116581509A (zh) * 2023-04-25 2023-08-11 散裂中子源科学中心 一种耦合度在线可调的波导型高功率耦合器

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003188103A (ja) 2001-12-14 2003-07-04 Tokyo Electron Ltd プラズマ処理装置

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4585668A (en) * 1983-02-28 1986-04-29 Michigan State University Method for treating a surface with a microwave or UHF plasma and improved apparatus
US4689459A (en) * 1985-09-09 1987-08-25 Gerling John E Variable Q microwave applicator and method
US4851630A (en) * 1988-06-23 1989-07-25 Applied Science & Technology, Inc. Microwave reactive gas generator
JP2986166B2 (ja) * 1989-01-30 1999-12-06 株式会社ダイヘン マイクロ波回路のインピーダンス自動調整装置及びインピーダンス自動調整方法
US4943345A (en) * 1989-03-23 1990-07-24 Board Of Trustees Operating Michigan State University Plasma reactor apparatus and method for treating a substrate
US5262610A (en) * 1991-03-29 1993-11-16 The United States Of America As Represented By The Air Force Low particulate reliability enhanced remote microwave plasma discharge device
JPH06231711A (ja) 1993-02-02 1994-08-19 Nissin Electric Co Ltd マイクロ波イオン源装置における整合方法
US5387288A (en) * 1993-05-14 1995-02-07 Modular Process Technology Corp. Apparatus for depositing diamond and refractory materials comprising rotating antenna
US5498308A (en) * 1994-02-25 1996-03-12 Fusion Systems Corp. Plasma asher with microwave trap
US6132550A (en) * 1995-08-11 2000-10-17 Sumitomo Electric Industries, Ltd. Apparatuses for desposition or etching
FR2757082B1 (fr) * 1996-12-13 1999-01-15 Air Liquide Procede d'epuration d'un gaz plasmagene et installation pour la mise en oeuvre d'un tel procede
US6016766A (en) * 1997-12-29 2000-01-25 Lam Research Corporation Microwave plasma processor
US6057645A (en) * 1997-12-31 2000-05-02 Eaton Corporation Plasma discharge device with dynamic tuning by a movable microwave trap
JP3979453B2 (ja) * 1998-01-14 2007-09-19 東京エレクトロン株式会社 マイクロ波プラズマ処理装置
US6066992A (en) * 1998-08-12 2000-05-23 Hughes Electronics Corporation Variable ISO attenuator using absorptive/reflective elements and latching
US6263830B1 (en) * 1999-04-12 2001-07-24 Matrix Integrated Systems, Inc. Microwave choke for remote plasma generator
JP4678905B2 (ja) * 1999-12-20 2011-04-27 徳芳 佐藤 プラズマ処理装置
US6261525B1 (en) * 2000-05-17 2001-07-17 Bruce Minaee Process gas decomposition reactor
JP4588329B2 (ja) * 2003-02-14 2010-12-01 東京エレクトロン株式会社 プラズマ発生装置およびリモートプラズマ処理装置
CN100570805C (zh) * 2003-09-22 2009-12-16 Mks仪器股份有限公司 避免射频等离子加工中的不稳定性的方法和装置
JP5213150B2 (ja) * 2005-08-12 2013-06-19 国立大学法人東北大学 プラズマ処理装置及びプラズマ処理装置を用いた製品の製造方法
US7589470B2 (en) * 2006-01-31 2009-09-15 Dublin City University Method and apparatus for producing plasma
WO2008032856A2 (en) * 2006-09-13 2008-03-20 Noritsu Koki Co., Ltd. Plasma generator and work processing apparatus provided with the same
GB2459461B (en) 2008-04-23 2012-08-01 Creo Medical Ltd A non-thermal microwave plasma sterilisation system using automatic tuning contained within the hand-piece of the applicator
JP2010027588A (ja) * 2008-06-18 2010-02-04 Tokyo Electron Ltd マイクロ波プラズマ処理装置及び給電方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003188103A (ja) 2001-12-14 2003-07-04 Tokyo Electron Ltd プラズマ処理装置

Also Published As

Publication number Publication date
US20110114115A1 (en) 2011-05-19
US8906195B2 (en) 2014-12-09
CN102598202A (zh) 2012-07-18
KR20120095972A (ko) 2012-08-29
JP2013511807A (ja) 2013-04-04
TW201142912A (en) 2011-12-01
WO2011062610A1 (en) 2011-05-26
JP5826185B2 (ja) 2015-12-02
EP2502256A1 (en) 2012-09-26
TWI492265B (zh) 2015-07-11
CN102598202B (zh) 2015-10-07

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