JP5772826B2 - 有機エレクトロルミネッセンス素子の製造方法 - Google Patents
有機エレクトロルミネッセンス素子の製造方法 Download PDFInfo
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- JP5772826B2 JP5772826B2 JP2012524508A JP2012524508A JP5772826B2 JP 5772826 B2 JP5772826 B2 JP 5772826B2 JP 2012524508 A JP2012524508 A JP 2012524508A JP 2012524508 A JP2012524508 A JP 2012524508A JP 5772826 B2 JP5772826 B2 JP 5772826B2
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000007756 gravure coating Methods 0.000 description 1
- 238000007646 gravure printing Methods 0.000 description 1
- 150000008282 halocarbons Chemical class 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- MNWFXJYAOYHMED-UHFFFAOYSA-M heptanoate Chemical compound CCCCCCC([O-])=O MNWFXJYAOYHMED-UHFFFAOYSA-M 0.000 description 1
- RZXDTJIXPSCHCI-UHFFFAOYSA-N hexa-1,5-diene-2,5-diol Chemical compound OC(=C)CCC(O)=C RZXDTJIXPSCHCI-UHFFFAOYSA-N 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-M hexanoate Chemical compound CCCCCC([O-])=O FUZZWVXGSFPDMH-UHFFFAOYSA-M 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- UEEXRMUCXBPYOV-UHFFFAOYSA-N iridium;2-phenylpyridine Chemical compound [Ir].C1=CC=CC=C1C1=CC=CC=N1.C1=CC=CC=C1C1=CC=CC=N1.C1=CC=CC=C1C1=CC=CC=N1 UEEXRMUCXBPYOV-UHFFFAOYSA-N 0.000 description 1
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- COLNWNFTWHPORY-UHFFFAOYSA-M lithium;8-hydroxyquinoline-2-carboxylate Chemical compound [Li+].C1=C(C([O-])=O)N=C2C(O)=CC=CC2=C1 COLNWNFTWHPORY-UHFFFAOYSA-M 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- UZKWTJUDCOPSNM-UHFFFAOYSA-N methoxybenzene Substances CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- WCPAKWJPBJAGKN-UHFFFAOYSA-N oxadiazole Chemical compound C1=CON=N1 WCPAKWJPBJAGKN-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical class N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920002493 poly(chlorotrifluoroethylene) Polymers 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 1
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920000412 polyarylene Polymers 0.000 description 1
- 239000005023 polychlorotrifluoroethylene (PCTFE) polymer Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 229920001601 polyetherimide Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229960002796 polystyrene sulfonate Drugs 0.000 description 1
- 239000011970 polystyrene sulfonate Substances 0.000 description 1
- 229940005642 polystyrene sulfonic acid Drugs 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 229920002620 polyvinyl fluoride Polymers 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- 150000003220 pyrenes Chemical class 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 239000013557 residual solvent Substances 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical class C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229940042055 systemic antimycotics triazole derivative Drugs 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- VLLMWSRANPNYQX-UHFFFAOYSA-N thiadiazole Chemical compound C1=CSN=N1.C1=CSN=N1 VLLMWSRANPNYQX-UHFFFAOYSA-N 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 125000005259 triarylamine group Chemical group 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- NVCBVYYESHBQKS-UHFFFAOYSA-L zinc;2-carboxyquinolin-8-olate Chemical compound [Zn+2].C1=C(C([O-])=O)N=C2C(O)=CC=CC2=C1.C1=C(C([O-])=O)N=C2C(O)=CC=CC2=C1 NVCBVYYESHBQKS-UHFFFAOYSA-L 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Description
前記工程が、真空成膜装置を用いて行う真空成膜工程を含み、前記真空成膜装置に投入される、前記可撓性フィルムと、リーダーフィルム及びサイドテープの少なくとも一つとを、該真空成膜装置投入前に水分量100ppm以下まで乾燥し、前記真空成膜装置の水分分圧が5×10−5Pa以下で真空成膜工程を行うことを特徴とする有機エレクトロルミネッセンス素子の製造方法。
3.前記真空成膜工程が、電子注入層形成工程と第二電極形成工程を含むことを特徴とする前記1または前記2に記載の有機エレクトロルミネッセンス素子の製造方法。
(2)基材/陽極/正孔輸送層/発光層/正孔阻止層/電子輸送層/陰極/封止層
(3)基材/陽極/正孔輸送層(正孔注入層)/発光層/正孔阻止層/電子輸送層/陰極バッファー層(電子注入層)/陰極/封止層
(4)基材/陽極/陽極バッファー層(正孔注入層)/正孔輸送層/発光層/正孔阻止層/電子輸送層/陰極バッファー層(電子注入層)/陰極/封止層
有機EL素子を構成している各層については後に説明する。
次に、有機EL素子を構成するこれら各有機機能層において用いられる材料について説明する。
得られた、各有機EL素子について、KEITHLEY製ソースメジャーユニット2400型を用いて、直流電圧を印加して1000cd/m2で発光させた。
発光した素子の平均値を各素子の駆動電圧とし、素子4の駆動電圧に対する比率を求め、以下の指標で評価した。△以上が好ましく、○以上であることがより好ましい。
○:80%以上90%未満
△:90%以上110%未満
×:110%以上または発光しない。
作製した有機EL素子に、直流5Vを印加し、100mm2のエリア内のダークスポットの有無についてマイクロスコープを用い目視にてカウントした。
○:ダークスポット1個以上、5個未満
△:ダークスポット5個以上、10個未満
×:ダークスポット10個以上。
初期の輝度を10mA/cm2で駆動した時の輝度の素子4の輝度に対する比率を求め、以下の指標で評価した。△以上が好ましく、○以上であることがより好ましい。
○:110%以上120%未満
△:90%以上110%未満
×:90%未満または発光しない。
実施例1で用いられた製造装置2bにおいて、供給部8に水分量の異なるサイドテープ7cと一緒に巻かれた帯状可撓性支持体Bのロール7a及び巻き取り部11に水分量の異なるサイドテープ11cを供給した場合に電子注入層形成工程9及び第二電極形成工程10で水分分圧が5×10−5Paになるまでの時間の変化を計測し、結果を表2に示す。
101 基材
102 第一電極
103 正孔輸送層
104 発光層
105 電子注入層
106 第二電極
107 封止層
108 接着剤層
109 封止フィルム
2a、2b、2c 製造工程
3 供給部
4 正孔輸送層形成工程
5 発光層形成工程
6 電子輸送層形成工程
7 巻き取り部
8 供給部
9 電子注入層形成工程
10 第二電極形成工程
11 巻き取り部
12 供給部
13 封止層形成工程
14 断裁工程
Claims (3)
- 少なくとも、可撓性フィルム(長尺基材)上に、第一電極、少なくとも発光層を含む有機機能層、及び第二電極を順次形成する工程から構成され、リーダーフィルム及びサイドテープの少なくとも一つを用いる有機エレクトロルミネッセンス素子の製造方法において、
前記工程が、真空成膜装置を用いて行う真空成膜工程を含み、前記真空成膜装置に投入される、前記可撓性フィルムと、リーダーフィルム及びサイドテープの少なくとも一つとを、該真空成膜装置投入前に水分量100ppm以下まで乾燥し、前記真空成膜装置の水分分圧が5×10−5Pa以下で真空成膜工程を行うことを特徴とする有機エレクトロルミネッセンス素子の製造方法。 - 前記真空成膜装置の水分分圧が2×10−5〜5×10−5Paで真空成膜工程を行うことを特徴とする請求項1に記載の有機エレクトロルミネッセンス素子の製造方法。
- 前記真空成膜工程が、電子注入層形成工程と第二電極形成工程を含むことを特徴とする請求項1または請求項2に記載の有機エレクトロルミネッセンス素子の製造方法。
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Citations (6)
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JP2004111173A (ja) * | 2002-09-18 | 2004-04-08 | Tdk Corp | 有機el素子 |
JP2004319484A (ja) * | 2003-04-11 | 2004-11-11 | Eastman Kodak Co | 透明防湿層を形成するための方法及び装置並びに防湿型oledデバイス |
JP2005335067A (ja) * | 2004-05-24 | 2005-12-08 | Nippon Zeon Co Ltd | ガスバリア積層体及び発光素子 |
JP2008287996A (ja) * | 2007-05-16 | 2008-11-27 | Soken:Kk | 有機エレクトロルミネッセンス素子の製造方法及び有機エレクトロルミネッセンス素子の製造装置 |
JP2009256709A (ja) * | 2008-04-15 | 2009-11-05 | Konica Minolta Holdings Inc | ガイドロール機構、とこれを用いる真空成膜装置、及び有機エレクトロルミネッセンス素子の製造方法 |
JP2010140705A (ja) * | 2008-12-10 | 2010-06-24 | Konica Minolta Holdings Inc | 有機エレクトロルミネッセンスパネル及びその製造方法、該有機エレクトロルミネッセンスパネルを用いた照明装置、表示装置 |
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JP2004111173A (ja) * | 2002-09-18 | 2004-04-08 | Tdk Corp | 有機el素子 |
JP2004319484A (ja) * | 2003-04-11 | 2004-11-11 | Eastman Kodak Co | 透明防湿層を形成するための方法及び装置並びに防湿型oledデバイス |
JP2005335067A (ja) * | 2004-05-24 | 2005-12-08 | Nippon Zeon Co Ltd | ガスバリア積層体及び発光素子 |
JP2008287996A (ja) * | 2007-05-16 | 2008-11-27 | Soken:Kk | 有機エレクトロルミネッセンス素子の製造方法及び有機エレクトロルミネッセンス素子の製造装置 |
JP2009256709A (ja) * | 2008-04-15 | 2009-11-05 | Konica Minolta Holdings Inc | ガイドロール機構、とこれを用いる真空成膜装置、及び有機エレクトロルミネッセンス素子の製造方法 |
JP2010140705A (ja) * | 2008-12-10 | 2010-06-24 | Konica Minolta Holdings Inc | 有機エレクトロルミネッセンスパネル及びその製造方法、該有機エレクトロルミネッセンスパネルを用いた照明装置、表示装置 |
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