JP5772338B2 - 軟質希薄銅合金線、軟質希薄銅合金板及び軟質希薄銅合金撚線 - Google Patents

軟質希薄銅合金線、軟質希薄銅合金板及び軟質希薄銅合金撚線 Download PDF

Info

Publication number
JP5772338B2
JP5772338B2 JP2011160356A JP2011160356A JP5772338B2 JP 5772338 B2 JP5772338 B2 JP 5772338B2 JP 2011160356 A JP2011160356 A JP 2011160356A JP 2011160356 A JP2011160356 A JP 2011160356A JP 5772338 B2 JP5772338 B2 JP 5772338B2
Authority
JP
Japan
Prior art keywords
copper alloy
wire
copper
soft
soft dilute
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2011160356A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013023736A (ja
JP2013023736A5 (enExample
Inventor
英之 佐川
英之 佐川
青山　正義
正義 青山
黒田　洋光
洋光 黒田
亨 鷲見
亨 鷲見
啓輔 藤戸
啓輔 藤戸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Proterial Ltd
Original Assignee
Hitachi Metals Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Metals Ltd filed Critical Hitachi Metals Ltd
Priority to JP2011160356A priority Critical patent/JP5772338B2/ja
Priority to US13/553,762 priority patent/US20130022831A1/en
Priority to CN201210252581.9A priority patent/CN102890976B/zh
Publication of JP2013023736A publication Critical patent/JP2013023736A/ja
Publication of JP2013023736A5 publication Critical patent/JP2013023736A5/ja
Application granted granted Critical
Publication of JP5772338B2 publication Critical patent/JP5772338B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H01B1/026—Alloys based on copper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/46—Structure, shape, material or disposition of the wire connectors prior to the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/432—Mechanical processes
    • H01L2224/4321—Pulling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45565—Single coating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H01L2224/488—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48817—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
    • H01L2224/48824—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00015—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed as prior art
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01012—Magnesium [Mg]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01028—Nickel [Ni]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12431—Foil or filament smaller than 6 mils

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Conductive Materials (AREA)
  • Wire Bonding (AREA)
JP2011160356A 2011-07-21 2011-07-21 軟質希薄銅合金線、軟質希薄銅合金板及び軟質希薄銅合金撚線 Active JP5772338B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2011160356A JP5772338B2 (ja) 2011-07-21 2011-07-21 軟質希薄銅合金線、軟質希薄銅合金板及び軟質希薄銅合金撚線
US13/553,762 US20130022831A1 (en) 2011-07-21 2012-07-19 Soft dilute copper alloy wire, soft dilute copper alloy plate and soft dilute copper alloy stranded wire
CN201210252581.9A CN102890976B (zh) 2011-07-21 2012-07-20 软质低浓度铜合金线、软质低浓度铜合金板及软质低浓度铜合金捻线

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011160356A JP5772338B2 (ja) 2011-07-21 2011-07-21 軟質希薄銅合金線、軟質希薄銅合金板及び軟質希薄銅合金撚線

Publications (3)

Publication Number Publication Date
JP2013023736A JP2013023736A (ja) 2013-02-04
JP2013023736A5 JP2013023736A5 (enExample) 2013-04-18
JP5772338B2 true JP5772338B2 (ja) 2015-09-02

Family

ID=47534454

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011160356A Active JP5772338B2 (ja) 2011-07-21 2011-07-21 軟質希薄銅合金線、軟質希薄銅合金板及び軟質希薄銅合金撚線

Country Status (3)

Country Link
US (1) US20130022831A1 (enExample)
JP (1) JP5772338B2 (enExample)
CN (1) CN102890976B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4709296B2 (ja) * 2009-04-17 2011-06-22 日立電線株式会社 希薄銅合金材料の製造方法
JP5077416B2 (ja) * 2010-02-08 2012-11-21 日立電線株式会社 軟質希薄銅合金材料、軟質希薄銅合金線、軟質希薄銅合金板、軟質希薄銅合金撚線およびこれらを用いたケーブル、同軸ケーブルおよび複合ケーブル
JP5589756B2 (ja) * 2010-10-20 2014-09-17 日立金属株式会社 フレキシブルフラットケーブル及びその製造方法
JP5589753B2 (ja) * 2010-10-20 2014-09-17 日立金属株式会社 溶接部材、及びその製造方法
JP5589754B2 (ja) 2010-10-20 2014-09-17 日立金属株式会社 希薄銅合金材料、及び耐水素脆化特性に優れた希薄銅合金材料の製造方法
US20130042949A1 (en) * 2011-08-17 2013-02-21 Hitachi Cable, Ltd. Method of manufacturing soft-dilute-copper-alloy-material
CN104810111A (zh) * 2015-04-23 2015-07-29 德州学院 信号传输用电缆线芯
CN107887053B (zh) * 2016-09-29 2019-12-31 日立金属株式会社 镀敷铜线、镀敷绞线和绝缘电线以及镀敷铜线的制造方法
JP6424925B2 (ja) * 2016-09-29 2018-11-21 日立金属株式会社 めっき銅線、めっき撚線及び絶縁電線並びにめっき銅線の製造方法
JP6828444B2 (ja) * 2017-01-10 2021-02-10 日立金属株式会社 導電線の製造方法、並びにケーブルの製造方法
KR20240121658A (ko) * 2021-12-07 2024-08-09 후루카와 덴키 고교 가부시키가이샤 구리계 선재 및 반도체 디바이스

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0784631B2 (ja) * 1986-10-23 1995-09-13 古河電気工業株式会社 電子機器用銅合金
JPH0819499B2 (ja) * 1987-06-10 1996-02-28 古河電気工業株式会社 フレキシブルプリント用銅合金
JPH08940B2 (ja) * 1987-07-03 1996-01-10 古河電気工業株式会社 フレキシブルプリント用銅合金
JPH01198457A (ja) * 1988-02-02 1989-08-10 Furukawa Electric Co Ltd:The コイル巻線用軟銅線
JP2726939B2 (ja) * 1989-03-06 1998-03-11 日鉱金属 株式会社 加工性，耐熱性の優れた高導電性銅合金
JPH06192768A (ja) * 1992-12-25 1994-07-12 Nikko Kinzoku Kk 高導電性銅合金
JP3324228B2 (ja) * 1993-09-14 2002-09-17 日立電線株式会社 極細線用銅線，及びその製造方法
JP3633302B2 (ja) * 1998-08-27 2005-03-30 日立電線株式会社 フラットケーブル用導体
KR100515804B1 (ko) * 2001-02-20 2005-09-21 닛꼬 긴조꾸 가꼬 가부시키가이샤 고강도 티탄 구리 합금 및 그 제조법 및 그것을 사용한단자ㆍ커넥터
JP4674483B2 (ja) * 2005-03-30 2011-04-20 日立電線株式会社 銅材の製造方法及び銅材
US7946022B2 (en) * 2005-07-05 2011-05-24 The Furukawa Electric Co., Ltd. Copper alloy for electronic machinery and tools and method of producing the same
JP2008182171A (ja) * 2006-12-28 2008-08-07 Hitachi Cable Ltd 太陽電池用はんだめっき線及びその製造方法並びに太陽電池
JP2008255417A (ja) * 2007-04-05 2008-10-23 Hitachi Cable Ltd 銅材の製造方法及び銅材
JP4709296B2 (ja) * 2009-04-17 2011-06-22 日立電線株式会社 希薄銅合金材料の製造方法
JP5652741B2 (ja) * 2009-11-24 2015-01-14 住友電気工業株式会社 銅線材及びその製造方法
JP5077416B2 (ja) * 2010-02-08 2012-11-21 日立電線株式会社 軟質希薄銅合金材料、軟質希薄銅合金線、軟質希薄銅合金板、軟質希薄銅合金撚線およびこれらを用いたケーブル、同軸ケーブルおよび複合ケーブル
JP5569330B2 (ja) * 2010-10-20 2014-08-13 日立金属株式会社 音楽・映像用ケーブル
JP5589753B2 (ja) * 2010-10-20 2014-09-17 日立金属株式会社 溶接部材、及びその製造方法
JP5589756B2 (ja) * 2010-10-20 2014-09-17 日立金属株式会社 フレキシブルフラットケーブル及びその製造方法
JP5760544B2 (ja) * 2011-03-17 2015-08-12 日立金属株式会社 軟質希薄銅合金線、軟質希薄銅合金撚線およびこれらを用いた絶縁電線、同軸ケーブルおよび複合ケーブル

Also Published As

Publication number Publication date
CN102890976A (zh) 2013-01-23
CN102890976B (zh) 2016-09-07
JP2013023736A (ja) 2013-02-04
US20130022831A1 (en) 2013-01-24

Similar Documents

Publication Publication Date Title
JP5772338B2 (ja) 軟質希薄銅合金線、軟質希薄銅合金板及び軟質希薄銅合金撚線
JP6019547B2 (ja) 銅ボンディングワイヤ
CN103608474B (zh) 软质稀释铜合金线、软质稀释铜合金绞线、以及使用这些的绝缘电线、同轴电缆及复合电缆
JP5077416B2 (ja) 軟質希薄銅合金材料、軟質希薄銅合金線、軟質希薄銅合金板、軟質希薄銅合金撚線およびこれらを用いたケーブル、同軸ケーブルおよび複合ケーブル
JP5589756B2 (ja) フレキシブルフラットケーブル及びその製造方法
CN102264928B (zh) 铝合金线材
JP2013057121A (ja) 軟質希薄銅合金材料の製造方法
JP5732809B2 (ja) 押出成形品及びその製造方法
JP5556577B2 (ja) 銅ボンディングワイヤ
JP2014136833A (ja) 軟質希薄銅合金絶縁撚線
JP5652369B2 (ja) 太陽電池用導体
JP5672939B2 (ja) 可動部用ケーブル及びその製造方法
JP5609564B2 (ja) 溶融はんだめっき線の製造方法
JP2013040386A (ja) イヤホンケーブル用導体及びイヤホンケーブル
JP5088450B2 (ja) 軟質希薄銅合金材料、軟質希薄銅合金板、軟質希薄銅合金線、軟質希薄銅合金撚線およびこれらを用いたケーブル
JP2012087366A (ja) 圧延銅箔、及び圧延銅箔の製造方法
JP2014102996A (ja) 軟質希薄銅合金線と接続端子との接合方法
JP2013040384A (ja) 軟質希薄銅合金を用いた配線材及び板材
JP2012087369A (ja) 太陽光発電システム用ケーブル及びその製造方法
JP2012087378A (ja) マイクロスピーカーボイスコイル用巻線及びその製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130301

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A712

Effective date: 20131129

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20140228

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20141022

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20141202

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150130

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20150602

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20150615

R150 Certificate of patent or registration of utility model

Ref document number: 5772338

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350