JP5758981B2 - ガス選択膜およびその製造方法 - Google Patents
ガス選択膜およびその製造方法 Download PDFInfo
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- JP5758981B2 JP5758981B2 JP2013503102A JP2013503102A JP5758981B2 JP 5758981 B2 JP5758981 B2 JP 5758981B2 JP 2013503102 A JP2013503102 A JP 2013503102A JP 2013503102 A JP2013503102 A JP 2013503102A JP 5758981 B2 JP5758981 B2 JP 5758981B2
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- Prior art keywords
- plate
- gas
- membrane
- layer
- gas selective
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- 239000012528 membrane Substances 0.000 title claims description 43
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 239000002210 silicon-based material Substances 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 claims description 2
- 229910010293 ceramic material Inorganic materials 0.000 claims description 2
- 239000000463 material Substances 0.000 claims 1
- 230000005855 radiation Effects 0.000 claims 1
- 239000006100 radiation absorber Substances 0.000 claims 1
- 239000007789 gas Substances 0.000 description 31
- 239000010410 layer Substances 0.000 description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000000700 radioactive tracer Substances 0.000 description 3
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000005297 pyrex Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D69/00—Semi-permeable membranes for separation processes or apparatus characterised by their form, structure or properties; Manufacturing processes specially adapted therefor
- B01D69/02—Semi-permeable membranes for separation processes or apparatus characterised by their form, structure or properties; Manufacturing processes specially adapted therefor characterised by their properties
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M3/00—Investigating fluid-tightness of structures
- G01M3/02—Investigating fluid-tightness of structures by using fluid or vacuum
- G01M3/04—Investigating fluid-tightness of structures by using fluid or vacuum by detecting the presence of fluid at the leakage point
- G01M3/20—Investigating fluid-tightness of structures by using fluid or vacuum by detecting the presence of fluid at the leakage point using special tracer materials, e.g. dye, fluorescent material, radioactive material
- G01M3/202—Investigating fluid-tightness of structures by using fluid or vacuum by detecting the presence of fluid at the leakage point using special tracer materials, e.g. dye, fluorescent material, radioactive material using mass spectrometer detection systems
- G01M3/205—Accessories or associated equipment; Pump constructions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/34—Chemical or biological purification of waste gases
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D69/00—Semi-permeable membranes for separation processes or apparatus characterised by their form, structure or properties; Manufacturing processes specially adapted therefor
- B01D69/10—Supported membranes; Membrane supports
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2325/00—Details relating to properties of membranes
- B01D2325/20—Specific permeability or cut-off range
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- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Biomedical Technology (AREA)
- Health & Medical Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Analytical Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Separation Using Semi-Permeable Membranes (AREA)
- Drying Of Semiconductors (AREA)
- Examining Or Testing Airtightness (AREA)
Description
Claims (11)
- ガス透過性窓(26)を有する膜の製造方法であって、
シリコンで第1プレート(10)を製造するステップと、
前記第1プレート(10)に凹部(11)または貫通穴を形成するステップと、
前記第1プレート(10)の上に、シリコン材料のガス選択透過層(21)を含むシリコン製の第2プレート(20)を貼着して前記ガス選択透過層(21)を前記第1プレート(10)と前記第2プレート(20)との間に配置させるステップと、
前記第2プレート(20)に凹部(22,40)を形成し、前記第2プレートの前記凹部は、少なくとも部分的に前記第1プレートの前記凹部(11)または貫通穴と重なり、前記第1プレート(10)および前記第2プレート(20)の両方により、ガス選択透過層(21)をそれぞれ含む窓(26)を有する膜本体(25)を形成するステップと、を含む方法。 - 前記凹部または貫通穴を形成するステップは、それぞれ、エッチングによってなされる、請求項1の方法。
- 前記ガス選択透過層(21)は、SiO2からなり、前記第2プレート(20)の底壁を形成する、請求項2の方法。
- 前記第1プレートの全ての前記凹部(11)は、多孔性でガスを透過する底壁を含む、請求項1の方法。
- 凹部(11)または穴を有するシリコン製の第1プレート(10)と、
薄いガス選択層(21)の底壁によって覆われた穴(22,40)を有するシリコン製の第2プレート(20)とを含む膜本体(25)を備え、
前記第1プレート(10)と前記第2プレート(20)とは、互いに平面的に当接し、前記ガス選択層(21)は前記第1プレート(10)と前記第2プレート(20)との間に配置されているガス選択膜。 - 前記第1プレート(10)の前記凹部(11)は、多孔性の底壁(13)を有する、請求項5のガス選択膜。
- シリコン材料の層(21)が位置するガス選択透過窓(26)を有する膜本体(25)と、前記窓(26)を加熱するための加熱装置(35)とを有し、前記加熱装置(35)は、複数の前記窓(26)を一緒に加熱する輻射加熱エレメント(36)によって形成され、前記膜本体(25)は、輻射吸収体の役目を果たす、ガス選択膜。
- 前記加熱エレメント(36)は、電気発熱体を含む、請求項7のガス選択膜。
- 前記膜本体(25)は、熱反射層(38)を含む、請求項7のガス選択膜。
- 前記加熱装置(35)は前記膜本体25に対して離して配置されている、請求項7のガス選択膜。
- 前記加熱エレメント(36)はセラミック材料からなる、請求項7に記載のガス選択膜。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/757,611 | 2010-04-09 | ||
US12/757,611 US8361196B2 (en) | 2010-04-09 | 2010-04-09 | Gas-selective membrane and method of its production |
PCT/EP2011/055371 WO2011124618A1 (en) | 2010-04-09 | 2011-04-06 | A gas-selective membrane and method of its production |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013524228A JP2013524228A (ja) | 2013-06-17 |
JP5758981B2 true JP5758981B2 (ja) | 2015-08-05 |
Family
ID=44065638
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013503102A Active JP5758981B2 (ja) | 2010-04-09 | 2011-04-06 | ガス選択膜およびその製造方法 |
Country Status (7)
Country | Link |
---|---|
US (2) | US8361196B2 (ja) |
EP (2) | EP3029446B1 (ja) |
JP (1) | JP5758981B2 (ja) |
KR (1) | KR101811694B1 (ja) |
CN (1) | CN102884409B (ja) |
RU (1) | RU2558644C2 (ja) |
WO (1) | WO2011124618A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5518039B2 (ja) * | 2011-12-28 | 2014-06-11 | 株式会社日立製作所 | フィルター、及びその製造方法 |
KR101759093B1 (ko) * | 2015-07-01 | 2017-07-18 | 서울대학교산학협력단 | 나노포어 구조체, 나노포어 구조를 이용한 이온소자 및 나노멤브레인 구조체 제조방법 |
WO2017064265A1 (en) * | 2015-10-16 | 2017-04-20 | Inficon Gmbh | Optical detection of tracer gases in a gas discharge cell having unexposed electrodes |
DE102021134647A1 (de) * | 2021-12-23 | 2023-06-29 | Inficon Gmbh | Vakuumlecksucher mit Ansprüh-Membran-Testleck und Verfahren |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3274750A (en) * | 1962-12-28 | 1966-09-27 | Gen Electric | Permeable polymeric membrane gas separation |
DE1648367A1 (de) * | 1967-06-05 | 1971-04-15 | Varian Mat Gmbh | Diffusionsmembran-Anordnung,insbesondere fuer Lecksuchroehren |
US3880684A (en) * | 1973-08-03 | 1975-04-29 | Mitsubishi Electric Corp | Process for preparing semiconductor |
US4384919A (en) * | 1978-11-13 | 1983-05-24 | Sperry Corporation | Method of making x-ray masks |
US5335256A (en) * | 1991-03-18 | 1994-08-02 | Canon Kabushiki Kaisha | Semiconductor substrate including a single or multi-layer film having different densities in the thickness direction |
DE4326265A1 (de) * | 1993-08-05 | 1995-02-09 | Leybold Ag | Testgasdetektor, vorzugsweise für Lecksuchgeräte, sowie Verfahren zum Betrieb eines Testgasdetektors dieser Art |
DE19521275A1 (de) | 1995-06-10 | 1996-12-12 | Leybold Ag | Gasdurchlaß mit selektiv wirkender Durchtrittsfläche sowie Verfahren zur Herstellung der Durchtrittsfläche |
EP1135328A1 (en) * | 1998-12-02 | 2001-09-26 | Massachusetts Institute Of Technology | Integrated palladium-based micromembranes for hydrogen separation and hydrogenation/dehydrogenation reactions |
EP1202791B1 (en) * | 1999-06-11 | 2006-12-27 | Gas Separation Technology, Inc. | Porous gas permeable material for gas separation |
US6784485B1 (en) * | 2000-02-11 | 2004-08-31 | International Business Machines Corporation | Diffusion barrier layer and semiconductor device containing same |
US6405066B1 (en) * | 2000-03-17 | 2002-06-11 | The Regents Of The University Of California | Implantable analyte sensor |
DE10122733A1 (de) * | 2001-05-10 | 2002-11-14 | Inficon Gmbh | Testleckvorrichtung |
DE10162126A1 (de) | 2001-12-18 | 2003-07-03 | Inficon Gmbh | Gasdurchlass mit selektiv wirkenden Gasdurchtrittsflächen |
EP1972373A1 (en) * | 2002-07-25 | 2008-09-24 | Dai Nippon Insatsu Kabushiki Kaisha | Production method of hydrogen production filter |
JP4027218B2 (ja) * | 2002-12-13 | 2007-12-26 | キヤノン株式会社 | 濾過膜の製造方法 |
ITTO20030032A1 (it) * | 2003-01-24 | 2004-07-25 | Varian Spa | Membrana permeabile selettivamente ai gas e metodo per la sua realizzazione. |
US7393391B2 (en) * | 2003-10-24 | 2008-07-01 | Stc.Unm | Fabrication of an anisotropic super hydrophobic/hydrophilic nanoporous membranes |
US7303681B2 (en) * | 2003-11-18 | 2007-12-04 | Exxonmobil Research And Engineering Company | Dynamic membrane wafer assembly and method |
US7622086B2 (en) * | 2004-01-26 | 2009-11-24 | Ngk Insulators, Ltd. | Selectively permeable membrane type reactor |
DE102004062101A1 (de) * | 2004-12-23 | 2006-07-13 | Inficon Gmbh | Selektiver Gassensor |
JP5015766B2 (ja) * | 2005-02-04 | 2012-08-29 | 日本碍子株式会社 | 選択透過膜型反応器 |
JP4562565B2 (ja) * | 2005-03-23 | 2010-10-13 | 株式会社ノリタケカンパニーリミテド | 無機多孔質分離膜およびその製造方法 |
US7604690B2 (en) * | 2005-04-05 | 2009-10-20 | Wostec, Inc. | Composite material for ultra thin membranes |
US8182590B2 (en) * | 2005-04-29 | 2012-05-22 | University Of Rochester | Ultrathin porous nanoscale membranes, methods of making, and uses thereof |
US7922795B2 (en) * | 2005-04-29 | 2011-04-12 | University Of Rochester | Ultrathin nanoscale membranes, methods of making, and uses thereof |
DE102006026125A1 (de) * | 2006-06-03 | 2007-12-06 | Inficon Gmbh | Gassensor |
US8043418B2 (en) * | 2006-12-08 | 2011-10-25 | General Electric Company | Gas separator apparatus |
RU2422942C1 (ru) * | 2009-12-25 | 2011-06-27 | Открытое акционерное общество "Научно-исследовательский институт "Элпа" с опытным производством" (ОАО "НИИ "Элпа") | Способ изготовления мембранных структур |
-
2010
- 2010-04-09 US US12/757,611 patent/US8361196B2/en active Active
-
2011
- 2011-04-06 EP EP16152458.2A patent/EP3029446B1/en active Active
- 2011-04-06 CN CN201180015925.8A patent/CN102884409B/zh active Active
- 2011-04-06 JP JP2013503102A patent/JP5758981B2/ja active Active
- 2011-04-06 EP EP11712856.1A patent/EP2556358B1/en active Active
- 2011-04-06 WO PCT/EP2011/055371 patent/WO2011124618A1/en active Application Filing
- 2011-04-06 RU RU2012147519/28A patent/RU2558644C2/ru active
- 2011-04-06 KR KR1020127029149A patent/KR101811694B1/ko active IP Right Grant
-
2012
- 2012-08-10 US US13/571,851 patent/US8425672B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
EP3029446A1 (en) | 2016-06-08 |
RU2012147519A (ru) | 2014-05-20 |
RU2558644C2 (ru) | 2015-08-10 |
US20120304863A1 (en) | 2012-12-06 |
US8425672B2 (en) | 2013-04-23 |
US8361196B2 (en) | 2013-01-29 |
JP2013524228A (ja) | 2013-06-17 |
EP2556358A1 (en) | 2013-02-13 |
US20110247498A1 (en) | 2011-10-13 |
KR20130048729A (ko) | 2013-05-10 |
EP3029446B1 (en) | 2017-09-27 |
CN102884409B (zh) | 2015-08-19 |
CN102884409A (zh) | 2013-01-16 |
WO2011124618A1 (en) | 2011-10-13 |
KR101811694B1 (ko) | 2018-01-25 |
EP2556358B1 (en) | 2017-08-30 |
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