JP5758406B2 - 基板トポグラフィならびにそのリソグラフィ・デフォーカスおよびオーバーレイとの関係についてのサイトに基づく定量化 - Google Patents

基板トポグラフィならびにそのリソグラフィ・デフォーカスおよびオーバーレイとの関係についてのサイトに基づく定量化 Download PDF

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JP5758406B2
JP5758406B2 JP2012548098A JP2012548098A JP5758406B2 JP 5758406 B2 JP5758406 B2 JP 5758406B2 JP 2012548098 A JP2012548098 A JP 2012548098A JP 2012548098 A JP2012548098 A JP 2012548098A JP 5758406 B2 JP5758406 B2 JP 5758406B2
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substrate
nanotopography
data
wafer
site
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JP2013527972A (ja
JP2013527972A5 (enExample
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ベーララギャバン・サシシュ
シンハ・ジェイディープ・ケー．
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KLA Corp
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KLA Tencor Corp
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70641—Focus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70783—Handling stress or warp of chucks, masks or workpieces, e.g. to compensate for imaging errors or considerations related to warpage of masks or workpieces due to their own weight
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/20—Design optimisation, verification or simulation
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/20—Design optimisation, verification or simulation
    • G06F30/23—Design optimisation, verification or simulation using finite element methods [FEM] or finite difference methods [FDM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Evolutionary Computation (AREA)
  • Geometry (AREA)
  • General Engineering & Computer Science (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Pathology (AREA)
  • Immunology (AREA)
  • Health & Medical Sciences (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Length Measuring Devices By Optical Means (AREA)
JP2012548098A 2010-01-08 2011-01-05 基板トポグラフィならびにそのリソグラフィ・デフォーカスおよびオーバーレイとの関係についてのサイトに基づく定量化 Active JP5758406B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US29354810P 2010-01-08 2010-01-08
US61/293,548 2010-01-08
US12/778,013 US8768665B2 (en) 2010-01-08 2010-05-11 Site based quantification of substrate topography and its relation to lithography defocus and overlay
US12/778,013 2010-05-11
PCT/US2011/020245 WO2011085019A2 (en) 2010-01-08 2011-01-05 Site based quantification of substrate topography and its relation to lithography defocus and overlay

Publications (3)

Publication Number Publication Date
JP2013527972A JP2013527972A (ja) 2013-07-04
JP2013527972A5 JP2013527972A5 (enExample) 2014-03-13
JP5758406B2 true JP5758406B2 (ja) 2015-08-05

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JP2012548098A Active JP5758406B2 (ja) 2010-01-08 2011-01-05 基板トポグラフィならびにそのリソグラフィ・デフォーカスおよびオーバーレイとの関係についてのサイトに基づく定量化

Country Status (4)

Country Link
US (1) US8768665B2 (enExample)
EP (1) EP2526409B1 (enExample)
JP (1) JP5758406B2 (enExample)
WO (1) WO2011085019A2 (enExample)

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US10331028B2 (en) 2015-11-12 2019-06-25 Toshiba Memory Corporation Imprinting apparatus, recording medium, and imprinting method

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US8747188B2 (en) 2011-02-24 2014-06-10 Apple Inc. Smart automation of robotic surface finishing
US9354526B2 (en) 2011-10-11 2016-05-31 Kla-Tencor Corporation Overlay and semiconductor process control using a wafer geometry metric
US10330608B2 (en) * 2012-05-11 2019-06-25 Kla-Tencor Corporation Systems and methods for wafer surface feature detection, classification and quantification with wafer geometry metrology tools
US9971339B2 (en) * 2012-09-26 2018-05-15 Apple Inc. Contact patch simulation
US9430593B2 (en) 2012-10-11 2016-08-30 Kla-Tencor Corporation System and method to emulate finite element model based prediction of in-plane distortions due to semiconductor wafer chucking
US9029810B2 (en) * 2013-05-29 2015-05-12 Kla-Tencor Corporation Using wafer geometry to improve scanner correction effectiveness for overlay control
KR102242414B1 (ko) 2013-10-02 2021-04-21 에이에스엠엘 네델란즈 비.브이. 산업 공정과 관련된 진단 정보를 얻는 방법 및 장치
US10401279B2 (en) * 2013-10-29 2019-09-03 Kla-Tencor Corporation Process-induced distortion prediction and feedforward and feedback correction of overlay errors
US9384540B2 (en) 2013-12-03 2016-07-05 Sunedison Semiconductor Limited (Uen201334164H) Systems and methods for interferometric phase measurement
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US20150338380A1 (en) * 2014-05-21 2015-11-26 University Of South Carolina Assessing Corrosion Damage in Post-Tensioned Concrete Structures Using Acoustic Emission
EP3748669A1 (en) * 2014-06-24 2020-12-09 Kla-Tencor Corporation Predictive modeling based focus error prediction
US9632038B2 (en) * 2014-08-20 2017-04-25 Kla-Tencor Corporation Hybrid phase unwrapping systems and methods for patterned wafer measurement
US10509329B2 (en) * 2014-09-03 2019-12-17 Kla-Tencor Corporation Breakdown analysis of geometry induced overlay and utilization of breakdown analysis for improved overlay control
CN104281747B (zh) * 2014-09-29 2018-01-30 京东方科技集团股份有限公司 一种精细掩膜板张网过程分析方法
US10156550B2 (en) * 2014-11-21 2018-12-18 University Of South Carolina Non-intrusive methods for the detection and classification of alkali-silica reaction in concrete structures
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US10331028B2 (en) 2015-11-12 2019-06-25 Toshiba Memory Corporation Imprinting apparatus, recording medium, and imprinting method

Also Published As

Publication number Publication date
US8768665B2 (en) 2014-07-01
EP2526409B1 (en) 2018-10-31
WO2011085019A3 (en) 2015-07-09
JP2013527972A (ja) 2013-07-04
EP2526409A2 (en) 2012-11-28
US20110172982A1 (en) 2011-07-14
WO2011085019A2 (en) 2011-07-14
EP2526409A4 (en) 2017-10-04

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