JP2013527972A5 - - Google Patents

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JP2013527972A5
JP2013527972A5 JP2012548098A JP2012548098A JP2013527972A5 JP 2013527972 A5 JP2013527972 A5 JP 2013527972A5 JP 2012548098 A JP2012548098 A JP 2012548098A JP 2012548098 A JP2012548098 A JP 2012548098A JP 2013527972 A5 JP2013527972 A5 JP 2013527972A5
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JP
Japan
Prior art keywords
substrate
nanotopography
data
plane strain
finite element
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JP2012548098A
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Japanese (ja)
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JP5758406B2 (ja
JP2013527972A (ja
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Priority claimed from US12/778,013 external-priority patent/US8768665B2/en
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JP2012548098A 2010-01-08 2011-01-05 基板トポグラフィならびにそのリソグラフィ・デフォーカスおよびオーバーレイとの関係についてのサイトに基づく定量化 Active JP5758406B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US29354810P 2010-01-08 2010-01-08
US61/293,548 2010-01-08
US12/778,013 US8768665B2 (en) 2010-01-08 2010-05-11 Site based quantification of substrate topography and its relation to lithography defocus and overlay
US12/778,013 2010-05-11
PCT/US2011/020245 WO2011085019A2 (en) 2010-01-08 2011-01-05 Site based quantification of substrate topography and its relation to lithography defocus and overlay

Publications (3)

Publication Number Publication Date
JP2013527972A JP2013527972A (ja) 2013-07-04
JP2013527972A5 true JP2013527972A5 (enExample) 2014-03-13
JP5758406B2 JP5758406B2 (ja) 2015-08-05

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JP2012548098A Active JP5758406B2 (ja) 2010-01-08 2011-01-05 基板トポグラフィならびにそのリソグラフィ・デフォーカスおよびオーバーレイとの関係についてのサイトに基づく定量化

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US (1) US8768665B2 (enExample)
EP (1) EP2526409B1 (enExample)
JP (1) JP5758406B2 (enExample)
WO (1) WO2011085019A2 (enExample)

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JP7164289B2 (ja) * 2016-09-05 2022-11-01 東京エレクトロン株式会社 半導体プロセッシング中のオーバレイを制御するための湾曲を制御する応力の位置特定チューニング
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