JP5749487B2 - 窒化物半導体の積層体及びその製造方法 - Google Patents
窒化物半導体の積層体及びその製造方法 Download PDFInfo
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- JP5749487B2 JP5749487B2 JP2010284523A JP2010284523A JP5749487B2 JP 5749487 B2 JP5749487 B2 JP 5749487B2 JP 2010284523 A JP2010284523 A JP 2010284523A JP 2010284523 A JP2010284523 A JP 2010284523A JP 5749487 B2 JP5749487 B2 JP 5749487B2
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- 239000004065 semiconductor Substances 0.000 title claims description 52
- 150000004767 nitrides Chemical class 0.000 title claims description 51
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000013078 crystal Substances 0.000 claims description 88
- 239000000758 substrate Substances 0.000 claims description 87
- 229910052594 sapphire Inorganic materials 0.000 claims description 33
- 239000010980 sapphire Substances 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 10
- 239000011777 magnesium Substances 0.000 claims description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 239000012808 vapor phase Substances 0.000 claims description 2
- 239000010408 film Substances 0.000 description 13
- 230000007547 defect Effects 0.000 description 11
- 229910002704 AlGaN Inorganic materials 0.000 description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- 238000005253 cladding Methods 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000001364 causal effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- QBJCZLXULXFYCK-UHFFFAOYSA-N magnesium;cyclopenta-1,3-diene Chemical compound [Mg+2].C1C=CC=[C-]1.C1C=CC=[C-]1 QBJCZLXULXFYCK-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
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- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
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Description
図2(a)は、図1(b)に示す構造の模式斜視図であり、図2(b)は、その上面図である。
図1(b)には、例えばサファイア基板11の結晶方位を示している。
Claims (20)
- 窒化物半導体を含まず、主面に凸部を有する基板と、
前記基板の前記主面上に直接設けられて前記凸部を覆い、クラックを内在する単結晶層
と、
前記単結晶層上に設けられた窒化物半導体層と、
を備え、
前記単結晶層は、AlxGa1−xN(0.8≦x≦1)層であり、
前記単結晶層の膜厚は、85nm以上250nm以下であり、
前記凸部は、所定の結晶方位に沿って設けられ、
前記クラックは、前記所定の結晶方位及びそれに等価な複数方向に沿って内在しているこ
とを特徴とする窒化物半導体の積層体。 - 前記クラックは、前記凸部の側面の上部の上に存在することを特徴とする請求項1記載
の窒化物半導体の積層体。 - 前記クラックは、前記凸部の側面の下部の上に存在することを特徴とする請求項1また
は2に記載の窒化物半導体の積層体。 - 複数の前記凸部が周期性を有する平面パターンで形成されていることを特徴とする請求
項1〜3のいずれか1つに記載の窒化物半導体の積層体。 - 複数の前記凸部がストライプ状に形成されていることを特徴とする請求項1〜4のいず
れか1つに記載の窒化物半導体の積層体。 - 前記凸部は、前記基板の所定の結晶方位に延びていることを特徴とする請求項5記載の
窒化物半導体の積層体。 - 前記複数の凸部が、前記所定の結晶方位と等価な複数方向に延びていることを特徴とす
る請求項6記載の窒化物半導体の積層体。 - 前記クラックは、前記凸部に沿って延びていることを特徴とする請求項6または7に記
載の窒化物半導体の積層体。 - 複数の前記凸部が島状に形成されていることを特徴とする請求項1〜4のいずれか1つ
に記載の窒化物半導体の積層体。 - 前記島状の複数の凸部は、前記基板の所定の結晶方位に配列されていることを特徴とす
る請求項9記載の窒化物半導体の積層体。 - 前記島状の複数の凸部が、前記所定の結晶方位と等価な複数方向に配列されていること
を特徴とする請求項10記載の窒化物半導体の積層体。 - 前記クラックは、前記凸部の配列方向に延びていることを特徴とする請求項10または
11に記載の窒化物半導体の積層体。 - 前記窒化物半導体層はマグネシウムを含むことを特徴とする請求項1〜12のいずれか
1つに記載の窒化物半導体の積層体。 - 前記単結晶層は、AlN層であることを特徴とする請求項13記載の窒化物半導体の積
層体。 - 前記単結晶層は、前記基板との格子定数差及びAl組成比から決まる臨界膜厚以上の厚
さを有することを特徴とする請求項13または14に記載の窒化物半導体の積層体。 - 前記基板は、サファイア基板であることを特徴とする請求項1〜15のいずれか1つに
記載の窒化物半導体の積層体。 - 前記窒化物半導体層は、発光層を含むことを特徴とする請求項1〜16のいずれか1つ
に記載の窒化物半導体の積層体。 - 前記窒化物半導体層は、前記単結晶層上に直接設けられたアンドープ層を含むことを特
徴とする請求項1〜17のいずれか1つに記載の窒化物半導体の積層体。 - 窒化物半導体を含まず、主面に所定の結晶方位に沿って凸部を形成し、前記凸部を有す
る基板の前記主面上に直接、前記所定の結晶方位及びそれに等価な複数方向に沿ってクラ
ックを生じさせつつ単結晶層を成長させ、前記単結晶層で前記凸部を覆う工程と、
前記単結晶層上に窒化物半導体層を形成する工程と、
を備え、
前記単結晶層は、AlxGa1−xN(0.8≦x≦1)層であり、前記単結晶層の膜厚
は、85nm以上250nm以下であることを特徴とする窒化物半導体の積層体の製造方
法。 - 前記単結晶層を1000℃以上の温度で前記基板上に気相成長させることを特徴とする
請求項19記載の窒化物半導体の積層体の製造方法。
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JP2010284523A JP5749487B2 (ja) | 2010-12-21 | 2010-12-21 | 窒化物半導体の積層体及びその製造方法 |
US13/102,204 US8502350B2 (en) | 2010-12-21 | 2011-05-06 | Stacked layers of nitride semiconductor and method for manufacturing the same |
US13/946,898 US8796111B2 (en) | 2010-12-21 | 2013-07-19 | Stacked layers of nitride semiconductor and method for manufacturing the same |
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JP6024533B2 (ja) * | 2012-03-28 | 2016-11-16 | 日亜化学工業株式会社 | サファイア基板及びその製造方法並びに窒化物半導体発光素子 |
WO2014118162A1 (de) * | 2013-01-31 | 2014-08-07 | Osram Opto Semiconductors Gmbh | Halbleiterschichtenfolge und verfahren zur herstellung einer halbleiterschichtenfolge |
JP7147416B2 (ja) * | 2018-09-26 | 2022-10-05 | 信越半導体株式会社 | エピタキシャルウェーハの製造方法、エピタキシャル成長用シリコン系基板及びエピタキシャルウェーハ |
JP7248152B2 (ja) * | 2020-01-22 | 2023-03-29 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法 |
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US8796111B2 (en) | 2014-08-05 |
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JP2012134294A (ja) | 2012-07-12 |
US8502350B2 (en) | 2013-08-06 |
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