JP5738438B2 - セラミック変換素子、セラミック変換素子を備えた半導体チップおよびセラミック変換素子の製造方法 - Google Patents
セラミック変換素子、セラミック変換素子を備えた半導体チップおよびセラミック変換素子の製造方法 Download PDFInfo
- Publication number
- JP5738438B2 JP5738438B2 JP2013552147A JP2013552147A JP5738438B2 JP 5738438 B2 JP5738438 B2 JP 5738438B2 JP 2013552147 A JP2013552147 A JP 2013552147A JP 2013552147 A JP2013552147 A JP 2013552147A JP 5738438 B2 JP5738438 B2 JP 5738438B2
- Authority
- JP
- Japan
- Prior art keywords
- ceramic
- layer
- conversion element
- active
- wavelength region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000919 ceramic Substances 0.000 title claims description 160
- 238000006243 chemical reaction Methods 0.000 title claims description 106
- 239000004065 semiconductor Substances 0.000 title claims description 54
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000012190 activator Substances 0.000 claims description 30
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 24
- 230000001629 suppression Effects 0.000 claims description 23
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 21
- 150000002910 rare earth metals Chemical class 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 18
- 229910010293 ceramic material Inorganic materials 0.000 claims description 10
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 8
- 239000002245 particle Substances 0.000 claims description 8
- 150000002500 ions Chemical class 0.000 claims description 6
- 239000000843 powder Substances 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 claims description 5
- 239000006185 dispersion Substances 0.000 claims description 5
- 239000000049 pigment Substances 0.000 claims description 5
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 239000002131 composite material Substances 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 238000005245 sintering Methods 0.000 claims description 4
- 239000002223 garnet Substances 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 3
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 2
- 150000001342 alkaline earth metals Chemical class 0.000 claims description 2
- 150000004645 aluminates Chemical class 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 239000012876 carrier material Substances 0.000 claims description 2
- GTDCAOYDHVNFCP-UHFFFAOYSA-N chloro(trihydroxy)silane Chemical compound O[Si](O)(O)Cl GTDCAOYDHVNFCP-UHFFFAOYSA-N 0.000 claims description 2
- 230000005670 electromagnetic radiation Effects 0.000 claims 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims 1
- 239000007788 liquid Substances 0.000 claims 1
- 230000005855 radiation Effects 0.000 description 7
- 230000003595 spectral effect Effects 0.000 description 5
- 238000011161 development Methods 0.000 description 4
- 230000018109 developmental process Effects 0.000 description 4
- 229910052684 Cerium Inorganic materials 0.000 description 2
- 229910052693 Europium Inorganic materials 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 2
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 2
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- OFOSXJVLRUUEEW-UHFFFAOYSA-N aluminum;lutetium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Lu+3] OFOSXJVLRUUEEW-UHFFFAOYSA-N 0.000 description 1
- PCTXFKUTDJMZPU-UHFFFAOYSA-N aluminum;oxygen(2-);terbium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Tb+3] PCTXFKUTDJMZPU-UHFFFAOYSA-N 0.000 description 1
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- -1 rare earth metal Sulfides Chemical class 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B18/00—Layered products essentially comprising ceramics, e.g. refractory products
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
- C09K11/7774—Aluminates
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/34—Oxidic
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/34—Oxidic
- C04B2237/341—Silica or silicates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/34—Oxidic
- C04B2237/343—Alumina or aluminates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/36—Non-oxidic
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/36—Non-oxidic
- C04B2237/366—Aluminium nitride
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
- C04B2237/36—Non-oxidic
- C04B2237/368—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
- C04B2237/704—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the ceramic layers or articles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Luminescent Compositions (AREA)
- Led Device Packages (AREA)
Description
・活性セラミック層と
・担体層とを含んでおり、
活性セラミック層は、第1の波長領域の電磁ビームを、第1の波長領域とは異なる、第2の波長領域の電磁ビームに変換するのに適しており、
担体層は、第1の波長領域の電磁ビームおよび/または第2の波長領域の電磁ビームを通す。
・第1の波長領域の電磁ビームを、ビーム出射面から送出するのに適している半導体ボディと、
・上述したようなセラミック変換素子と
を含んでいる。
・担体層または担体層用のベースであるグリーンシートを準備する
・活性セラミック層用のベースであるグリーンシートまたは活性セラミック層用のベースである粉体分散液を、担体層上にまたは担体層用のベースとして用いられるグリーンシート上に被着させる、
・層状複合体を焼結する。
Claims (23)
- セラミック変換素子(1)であって、
・第1の波長領域の電磁ビームを、当該第1の波長領域とは異なる第2の波長領域の電磁ビームに変換するのに適している活性セラミック層(2)と、
・前記第1の波長領域のビームおよび/または前記第2の波長領域のビームを通す担体層(3)と
を有しており、ここで前記活性セラミック層(2)と前記担体層(3)との間に抑制層(5)が配置されており、前記抑制層(5)は、前記活性セラミック層(2)から前記担体層(3)内への付活剤イオンの拡散を低減させるのに適しており、
前記抑制層(5)の厚さは5μmよりも薄い
ことを特徴するセラミック変換素子(1)。 - 1つの活性セラミック層(2)と1つの担体層(3)とを有している、請求項1記載のセラミック変換素子(1)。
- 前記活性セラミック層(2)は、以下の蛍光体のうちの1つを有する:すなわち、希土類金属がドーピングされたガーネット、希土類金属がドーピングされたアルカリ土類硫化物、希土類金属がドーピングされたチオガレート、希土類金属がドーピングされたアルミン酸塩、希土類金属がドーピングされたケイ酸塩、希土類金属がドーピングされたオルト珪酸塩、希土類金属がドーピングされたクロロシリケート、希土類金属がドーピングされたアルカリ土類金属窒化ケイ素、希土類金属がドーピングされた酸窒化物および希土類金属がドーピングされた酸窒化アルミニウム、希土類金属がドーピングされた窒化ケイ素、サイアロンのうちの1つを有する、請求項1または2記載のセラミック変換素子(1)。
- 前記活性セラミック層(2)は100μm以下、有利には50μm以下、特に有利には25μm以下の厚さを有している、請求項1から3までのいずれか一項記載のセラミック変換素子(1)。
- 前記活性セラミック層(2)は、付活剤を有する蛍光体から成り、前記付活剤の濃度の値は、2%以上5%以下の間である、請求項1から4までのいずれか一項記載のセラミック変換素子(1)。
- 前記担体層(3)はセラミック材料から形成されている、請求項1から5までのいずれか一項記載のセラミック変換素子(1)。
- 200μm以下50μm以上の間、有利には180μm以下50μm以上の間の厚さを有している、請求項1から6までのいずれか一項記載のセラミック変換素子(1)。
- ・前記担体層(3)は散乱源(4)を有しており、前記散乱源はセラミック粒子から形成されており、ここで前記セラミック粒子の材料は、前記担体層のセラミック材料とは異なっており、
・前記散乱源(4)は、前記第1の波長領域の電磁ビームおよび/または前記第2の波長領域の電磁ビームを散乱させるのに適している、請求項1から7までのいずれか一項記載のセラミック変換素子(1)。 - 前記担体層(3)はピグメントを有している、請求項1から8までのいずれか一項記載のセラミック変換素子(1)。
- 前記担体層は、前記第1の波長領域のビーム及び前記第2の波長領域のビームの少なくとも75%を透過させる、請求項1から9までのいずれか一項記載のセラミック変換素子(1)。
- 前記担体層は、前記第1の波長領域のビームの少なくとも75%を透過させ、前記第1の波長領域のビームの最大10%が前記担体層を通過するように前記第2の波長領域のビームを吸収する、請求項1から10までのいずれか一項記載のセラミック変換素子(1)。
- 前記変換セラミック素子(1)の活性セラミック層は自立しないように構成されている、請求項1から11までのいずれか一項記載のセラミック変換素子(1)。
- 前記変換セラミック素子(1)は、2つの担体層間にカプセル封入された活性セラミック層から形成されている、請求項1または3から12までのいずれか一項記載のセラミック変換素子(1)。
- 前記担体層は、前記活性セラミック層の蛍光体の付活剤イオンを有していない、請求項1から13までのいずれか一項記載のセラミック変換素子(1)。
- 前記抑制層は、セラミック材料から形成されている、請求項1から14までのいずれか一項記載のセラミック変換素子(1)。
- 前記担体層は、前記活性セラミック層と同様に、セラミック材料から形成されている、請求項1から15までのいずれか一項記載のセラミック変換素子(1)。
- 前記抑制層は、酸化アルミニウムを含有するかまたは酸化アルミニウムから成る、請求項1から16までのいずれか一項記載のセラミック変換素子(1)。
- ビーム放射半導体チップであって:
・第1の波長領域の電磁ビームをビーム出射面(8)から送出するのに適している半導体ボディ(6)と、
・前記第1の波長領域のビームを、当該第1の波長領域とは異なる第2の波長領域のビームに変換するのに適している活性セラミック層(2)を備えている、請求項1から17までのいずれか一項に記載されたセラミック変換素子(1)とを有している、
ことを特徴とするビーム放射半導体チップ。 - 前記変換素子(1)の前記活性セラミック層(2)は、前記半導体ボディ(6)の前記ビーム出射面(8)上に直に接して被着されている、請求項18記載のビーム放射半導体チップ。
- 4000K以上6000K以下の間の色温度を有する混合白色光を送出する、請求項18または19記載のビーム放射半導体チップ。
- 請求項1から17までのいずれか1項記載のセラミック変換素子(1)を製造する方法であって、
・担体層(3)または担体層(3)用のベースであるグリーンシート(12)を準備するステップと、
・活性セラミック層(2)用のベースであるグリーンシート(14)または前記活性セラミック層(2)用のベースである粉体分散液を、前記担体層(3)上に、または、前記担体層(3)用のベースとして用いられる前記グリーンシート(12)上に被着するステップと、
・層状複合体を焼結するステップと
を有している、
ことを特徴とする、セラミック変換素子(1)を製造する方法。 - 抑制層用のベースであるグリーンシートを前記層状複合体内にラミネートする、請求項21記載の方法。
- 前記抑制層を形成するために、担体材料を吹きつけまたはデポジットによってコーティングする、請求項21記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102011010118A DE102011010118A1 (de) | 2011-02-02 | 2011-02-02 | Keramisches Konversionselement, Halbleiterchip mit einem keramischen Konversionselement und Verfahren zur Herstellung eines keramischen Konversionselements |
DE102011010118.7 | 2011-02-02 | ||
PCT/EP2012/050624 WO2012104141A1 (de) | 2011-02-02 | 2012-01-17 | Keramisches konversionselement, halbleiterchip mit einem keramischen konversionselement und verfahren zur herstellung eines keramischen konversionselements |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015086705A Division JP6223381B2 (ja) | 2011-02-02 | 2015-04-21 | セラミック変換素子、セラミック変換素子を備えた半導体チップおよびセラミック変換素子の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014504807A JP2014504807A (ja) | 2014-02-24 |
JP5738438B2 true JP5738438B2 (ja) | 2015-06-24 |
Family
ID=45491613
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013552147A Active JP5738438B2 (ja) | 2011-02-02 | 2012-01-17 | セラミック変換素子、セラミック変換素子を備えた半導体チップおよびセラミック変換素子の製造方法 |
JP2015086705A Active JP6223381B2 (ja) | 2011-02-02 | 2015-04-21 | セラミック変換素子、セラミック変換素子を備えた半導体チップおよびセラミック変換素子の製造方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015086705A Active JP6223381B2 (ja) | 2011-02-02 | 2015-04-21 | セラミック変換素子、セラミック変換素子を備えた半導体チップおよびセラミック変換素子の製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9076933B2 (ja) |
JP (2) | JP5738438B2 (ja) |
KR (1) | KR101552780B1 (ja) |
CN (2) | CN105118913B (ja) |
DE (1) | DE102011010118A1 (ja) |
WO (1) | WO2012104141A1 (ja) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102012202927B4 (de) * | 2012-02-27 | 2021-06-10 | Osram Gmbh | Lichtquelle mit led-chip und leuchtstoffschicht |
DE102012104274A1 (de) | 2012-05-16 | 2013-11-21 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines keramischen Konversionselements, keramisches Konversionselement und optoelektronisches Halbleiterbauelement |
DE102012109650A1 (de) | 2012-10-10 | 2014-04-10 | Osram Opto Semiconductors Gmbh | Keramisches Konversionselement, optoelektronisches Halbleiterelement und Verfahren zur Herstellung eines keramischen Konversionselements |
DE102013104132A1 (de) * | 2013-04-24 | 2014-10-30 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und optoelektronisches Halbleiterbauteil |
DE102013105533A1 (de) | 2013-05-29 | 2014-12-04 | Osram Opto Semiconductors Gmbh | Anorganisches optisches Element und Verfahren zur Herstellung eines anorganischen optischen Elements |
DE102013218451A1 (de) | 2013-09-14 | 2015-03-19 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Konversionselement für ein optisches oder optoelektronisches Bauelement und Verfahren zu seiner Herstellung |
DE102014100771A1 (de) | 2014-01-23 | 2015-07-23 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines keramischen Konversionselements und Licht emittierendes Bauelement |
MY177277A (en) | 2014-03-03 | 2020-09-10 | Covalent Mat Corporation | Wavelength converting member |
DE102014112883A1 (de) | 2014-09-08 | 2016-03-10 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauteil |
DE102015105474A1 (de) * | 2015-04-10 | 2016-10-13 | Osram Opto Semiconductors Gmbh | Konverterbauteil für eine optoelektronische Leuchtvorrichtung |
DE102017101729A1 (de) * | 2017-01-30 | 2018-08-02 | Osram Opto Semiconductors Gmbh | Strahlungsemittierende Vorrichtung |
CN110094647A (zh) * | 2018-01-29 | 2019-08-06 | 深圳市绎立锐光科技开发有限公司 | 一种波长转换装置、发光组件及照明装置 |
DE102018204163A1 (de) | 2018-03-19 | 2019-09-19 | Osram Opto Semiconductors Gmbh | Konversionselement für LED-Anwendungen mit hoher Leistung und hoher Farbwiedergabe |
DE102018128753A1 (de) * | 2018-11-15 | 2020-05-20 | Osram Opto Semiconductors Gmbh | Verfahren zur herstellung eines konversionselements, konversionselement und strahlungsemittierendes bauelement |
US10873009B2 (en) * | 2018-11-21 | 2020-12-22 | Osram Opto Semiconductors Gmbh | Barrier layer functioned novel-structure ceramic converter materials and light emitting devices |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2812142A1 (fr) | 2000-07-21 | 2002-01-25 | Microcid Sa | Transpondeur passif et lecteur pour une identification sans contact de tels transpondeurs |
DE10122718C2 (de) | 2001-05-10 | 2003-04-17 | Schott Glas | Verfahren zur Erzeugung einer Streulichtschicht auf einer transparenten Kochplatte sowie dessen Verwendung |
US6825054B2 (en) * | 2001-11-21 | 2004-11-30 | Paul Valentine | Light emitting ceramic device and method for fabricating the same |
US7554258B2 (en) * | 2002-10-22 | 2009-06-30 | Osram Opto Semiconductors Gmbh | Light source having an LED and a luminescence conversion body and method for producing the luminescence conversion body |
US20070267646A1 (en) | 2004-06-03 | 2007-11-22 | Philips Lumileds Lighting Company, Llc | Light Emitting Device Including a Photonic Crystal and a Luminescent Ceramic |
US7361938B2 (en) * | 2004-06-03 | 2008-04-22 | Philips Lumileds Lighting Company Llc | Luminescent ceramic for a light emitting device |
DE102005030128B4 (de) * | 2004-06-28 | 2011-02-03 | Kyocera Corp. | Lichtemittierende Vorrichtung und Beleuchtungsvorrichtung |
JP5490407B2 (ja) * | 2005-03-14 | 2014-05-14 | コーニンクレッカ フィリップス エヌ ヴェ | 多結晶セラミック構造の蛍光体、及び前記蛍光体を有する発光素子 |
CN101288342B (zh) * | 2005-04-20 | 2010-05-19 | 皇家飞利浦电子股份有限公司 | 包括陶瓷发光转换器的照明系统 |
US7514721B2 (en) * | 2005-11-29 | 2009-04-07 | Koninklijke Philips Electronics N.V. | Luminescent ceramic element for a light emitting device |
WO2007084640A2 (en) * | 2006-01-20 | 2007-07-26 | Cree Led Lighting Solutions, Inc. | Shifting spectral content in solid state light emitters by spatially separating lumiphor films |
EP1979954B1 (en) * | 2006-01-24 | 2015-03-18 | Philips Intellectual Property & Standards GmbH | Light-emitting device |
DE102006037730A1 (de) * | 2006-08-11 | 2008-02-14 | Merck Patent Gmbh | LED-Konversionsleuchtstoffe in Form von keramischen Körpern |
US7521862B2 (en) | 2006-11-20 | 2009-04-21 | Philips Lumileds Lighting Co., Llc | Light emitting device including luminescent ceramic and light-scattering material |
US8728835B2 (en) * | 2008-01-15 | 2014-05-20 | Koninklijke Philips N.V. | Light scattering by controlled porosity in optical ceramics for LEDs |
US7884545B2 (en) * | 2008-03-24 | 2011-02-08 | Citizen Holdings Co., Ltd. | LED light source and method for adjusting chromaticity of LED light source |
JP5542134B2 (ja) * | 2008-07-22 | 2014-07-09 | コーニンクレッカ フィリップス エヌ ヴェ | 発光装置に関する光学要素及び光学要素の製造の方法 |
DE102008054029A1 (de) * | 2008-10-30 | 2010-05-06 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil |
JP5107882B2 (ja) * | 2008-12-11 | 2012-12-26 | 日東電工株式会社 | 光半導体封止用シート |
US20100289044A1 (en) * | 2009-05-12 | 2010-11-18 | Koninklijke Philips Electronics N.V. | Wavelength conversion for producing white light from high power blue led |
EP2531571A1 (en) | 2010-02-04 | 2012-12-12 | Nitto Denko Corporation | Light emissive ceramic laminate and method of making same |
TWI486254B (zh) * | 2010-09-20 | 2015-06-01 | Nitto Denko Corp | 發光陶瓷層板及其製造方法 |
-
2011
- 2011-02-02 DE DE102011010118A patent/DE102011010118A1/de active Pending
-
2012
- 2012-01-17 CN CN201510460432.5A patent/CN105118913B/zh active Active
- 2012-01-17 KR KR1020137020233A patent/KR101552780B1/ko active IP Right Grant
- 2012-01-17 JP JP2013552147A patent/JP5738438B2/ja active Active
- 2012-01-17 WO PCT/EP2012/050624 patent/WO2012104141A1/de active Application Filing
- 2012-01-17 CN CN201280007472.9A patent/CN103339223B/zh active Active
- 2012-01-17 US US13/981,370 patent/US9076933B2/en active Active
-
2015
- 2015-04-21 JP JP2015086705A patent/JP6223381B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
CN103339223B (zh) | 2015-09-09 |
JP6223381B2 (ja) | 2017-11-01 |
CN105118913A (zh) | 2015-12-02 |
JP2014504807A (ja) | 2014-02-24 |
KR101552780B1 (ko) | 2015-09-11 |
CN103339223A (zh) | 2013-10-02 |
US20130320384A1 (en) | 2013-12-05 |
JP2015165588A (ja) | 2015-09-17 |
WO2012104141A1 (de) | 2012-08-09 |
US9076933B2 (en) | 2015-07-07 |
DE102011010118A8 (de) | 2012-12-13 |
CN105118913B (zh) | 2018-03-30 |
DE102011010118A1 (de) | 2012-08-02 |
KR20130115342A (ko) | 2013-10-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6223381B2 (ja) | セラミック変換素子、セラミック変換素子を備えた半導体チップおよびセラミック変換素子の製造方法 | |
JP6257764B2 (ja) | 発光半導体コンポーネント及びその製造方法並びに当該発光半導体コンポーネントを備えた波長変換素子の製造方法 | |
KR101845840B1 (ko) | 광전자 반도체 컴포넌트 및 광전자 반도체 컴포넌트를 생산하기 위한 방법 | |
RU2455731C2 (ru) | Осветительная система, содержащая монолитный керамический люминесцентный преобразователь | |
US10873009B2 (en) | Barrier layer functioned novel-structure ceramic converter materials and light emitting devices | |
US20100289044A1 (en) | Wavelength conversion for producing white light from high power blue led | |
KR20110139154A (ko) | 반도체 발광 장치 | |
JP5740344B2 (ja) | 発光装置の製造方法 | |
JP6231112B2 (ja) | セラミック変換素子、オプトエレクトロニクス半導体デバイス、及び、セラミック変換素子の製造方法 | |
KR20070024759A (ko) | 복합 형광체 분말, 이를 이용한 발광 장치 및 복합 형광체분말의 제조 방법 | |
JP2012109531A (ja) | 発光装置およびその製造方法 | |
JP2015090887A (ja) | 発光素子及び発光装置 | |
JP2010521805A (ja) | 低熱膨張係数を有する化合物を含む照明システム | |
JP6301099B2 (ja) | 多色蛍光体シート及びその製造方法と、多色蛍光体シートを用いたled発光装置 | |
US20220399480A1 (en) | Phosphor plate, light emitting device, and method for manufacturing phosphor plate | |
EP2246909B1 (en) | White light emitting device and lighting fitting for vehicles using the white light emitting device | |
JP2013138216A (ja) | 発光装置 | |
JP5107882B2 (ja) | 光半導体封止用シート | |
JP2019114765A (ja) | 発光装置および発光装置の製造方法 | |
US20170358718A1 (en) | Optoelectronic semiconductor chip, method for producing an optoelectronic semiconductor chip, conversion element and phosphor for a conversion element | |
JP2022007638A (ja) | 成形体、発光装置及び成形体の製造方法 | |
JP6656580B2 (ja) | 波長変換部材の製造方法 | |
US11807791B2 (en) | Phosphor plate and light emitting device using the same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20140630 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140714 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20141003 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20141010 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20141222 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150323 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150421 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5738438 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |