JP5732354B2 - 研磨パッド - Google Patents

研磨パッド Download PDF

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Publication number
JP5732354B2
JP5732354B2 JP2011190859A JP2011190859A JP5732354B2 JP 5732354 B2 JP5732354 B2 JP 5732354B2 JP 2011190859 A JP2011190859 A JP 2011190859A JP 2011190859 A JP2011190859 A JP 2011190859A JP 5732354 B2 JP5732354 B2 JP 5732354B2
Authority
JP
Japan
Prior art keywords
polishing
region
light transmission
polishing pad
transmission region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2011190859A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013052459A5 (enExample
JP2013052459A (ja
Inventor
木村　毅
毅 木村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyo Tire Corp
Original Assignee
Toyo Tire and Rubber Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2011190859A priority Critical patent/JP5732354B2/ja
Application filed by Toyo Tire and Rubber Co Ltd filed Critical Toyo Tire and Rubber Co Ltd
Priority to KR1020147007404A priority patent/KR101633745B1/ko
Priority to CN201280041433.0A priority patent/CN103747918A/zh
Priority to US14/241,008 priority patent/US9156126B2/en
Priority to PCT/JP2012/071472 priority patent/WO2013031692A1/ja
Priority to TW101131547A priority patent/TWI480942B/zh
Publication of JP2013052459A publication Critical patent/JP2013052459A/ja
Publication of JP2013052459A5 publication Critical patent/JP2013052459A5/ja
Application granted granted Critical
Publication of JP5732354B2 publication Critical patent/JP5732354B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/205—Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/22—Lapping pads for working plane surfaces characterised by a multi-layered structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2011190859A 2011-09-01 2011-09-01 研磨パッド Expired - Fee Related JP5732354B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2011190859A JP5732354B2 (ja) 2011-09-01 2011-09-01 研磨パッド
CN201280041433.0A CN103747918A (zh) 2011-09-01 2012-08-24 抛光垫
US14/241,008 US9156126B2 (en) 2011-09-01 2012-08-24 Polishing pad
PCT/JP2012/071472 WO2013031692A1 (ja) 2011-09-01 2012-08-24 研磨パッド
KR1020147007404A KR101633745B1 (ko) 2011-09-01 2012-08-24 연마 패드
TW101131547A TWI480942B (zh) 2011-09-01 2012-08-30 Polishing pad

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011190859A JP5732354B2 (ja) 2011-09-01 2011-09-01 研磨パッド

Publications (3)

Publication Number Publication Date
JP2013052459A JP2013052459A (ja) 2013-03-21
JP2013052459A5 JP2013052459A5 (enExample) 2014-05-08
JP5732354B2 true JP5732354B2 (ja) 2015-06-10

Family

ID=47756182

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011190859A Expired - Fee Related JP5732354B2 (ja) 2011-09-01 2011-09-01 研磨パッド

Country Status (6)

Country Link
US (1) US9156126B2 (enExample)
JP (1) JP5732354B2 (enExample)
KR (1) KR101633745B1 (enExample)
CN (1) CN103747918A (enExample)
TW (1) TWI480942B (enExample)
WO (1) WO2013031692A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI808744B (zh) * 2021-05-04 2023-07-11 南韓商Ｓｋｃ索密思有限公司 拋光墊、拋光墊的製備方法以及利用該拋光墊的半導體裝置的製造方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8961266B2 (en) 2013-03-15 2015-02-24 Applied Materials, Inc. Polishing pad with secondary window seal
TWI593511B (zh) * 2016-06-08 2017-08-01 智勝科技股份有限公司 研磨墊及研磨方法
KR101945874B1 (ko) * 2017-08-07 2019-02-11 에스케이씨 주식회사 표면 처리된 연마패드용 윈도우 및 이를 포함하는 연마패드
CN109202693B (zh) * 2017-10-16 2021-10-12 Skc索密思株式会社 防泄漏抛光垫及其制造方法
JP7525271B2 (ja) * 2020-03-03 2024-07-30 富士紡ホールディングス株式会社 研磨パッド及び研磨パッドの製造方法
US11633830B2 (en) * 2020-06-24 2023-04-25 Rohm And Haas Electronic Materials Cmp Holdings, Inc. CMP polishing pad with uniform window
US20230059394A1 (en) * 2021-07-02 2023-02-23 Skc Solmics Co., Ltd. Polishing pad and method for manufacturing semiconductor device using the same

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6832950B2 (en) * 2002-10-28 2004-12-21 Applied Materials, Inc. Polishing pad with window
US6454630B1 (en) 1999-09-14 2002-09-24 Applied Materials, Inc. Rotatable platen having a transparent window for a chemical mechanical polishing apparatus and method of making the same
US6524164B1 (en) 1999-09-14 2003-02-25 Applied Materials, Inc. Polishing pad with transparent window having reduced window leakage for a chemical mechanical polishing apparatus
DE60011798T2 (de) 1999-09-29 2005-11-10 Rohm and Haas Electronic Materials CMP Holdings, Inc., Wilmington Schleifkissen
US20020137431A1 (en) * 2001-03-23 2002-09-26 Labunsky Michael A. Methods and apparatus for polishing and planarization
DE60228784D1 (de) * 2001-04-25 2008-10-23 Jsr Corp Lichtduchlässiges Polierkissen für eine Halbleiterschleife
JP4131632B2 (ja) 2001-06-15 2008-08-13 株式会社荏原製作所 ポリッシング装置及び研磨パッド
JP2004327974A (ja) * 2003-04-09 2004-11-18 Jsr Corp 研磨パッド、その製造法と製造用金型および半導体ウエハの研磨方法
JP2004343090A (ja) * 2003-04-22 2004-12-02 Jsr Corp 研磨パッドおよび半導体ウェハの研磨方法
KR20040093402A (ko) 2003-04-22 2004-11-05 제이에스알 가부시끼가이샤 연마 패드 및 반도체 웨이퍼의 연마 방법
JP2004327779A (ja) * 2003-04-25 2004-11-18 Toray Ind Inc 研磨パッド、研磨装置及び半導体デバイスの製造方法
KR100532440B1 (ko) * 2003-06-05 2005-11-30 삼성전자주식회사 윈도로의 유체의 침투를 막는 실링 장벽부를 가지는 화학기계적 연마 장비에 사용되는 연마 패드
US6984163B2 (en) * 2003-11-25 2006-01-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing pad with high optical transmission window
US7018581B2 (en) * 2004-06-10 2006-03-28 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of forming a polishing pad with reduced stress window
US7520968B2 (en) * 2004-10-05 2009-04-21 Applied Materials, Inc. Conductive pad design modification for better wafer-pad contact
US7764377B2 (en) * 2005-08-22 2010-07-27 Applied Materials, Inc. Spectrum based endpointing for chemical mechanical polishing
US7621798B1 (en) * 2006-03-07 2009-11-24 Applied Materials, Inc. Reducing polishing pad deformation
JP5146927B2 (ja) 2006-10-18 2013-02-20 東洋ゴム工業株式会社 長尺研磨パッドの製造方法
JP2008226911A (ja) * 2007-03-08 2008-09-25 Jsr Corp 化学機械研磨用パッド、化学機械研磨用積層体パッド、および化学機械研磨方法
JP5274798B2 (ja) * 2007-08-20 2013-08-28 東洋ゴム工業株式会社 研磨パッド及びその製造方法
US8083570B2 (en) 2008-10-17 2011-12-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad having sealed window

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI808744B (zh) * 2021-05-04 2023-07-11 南韓商Ｓｋｃ索密思有限公司 拋光墊、拋光墊的製備方法以及利用該拋光墊的半導體裝置的製造方法

Also Published As

Publication number Publication date
US9156126B2 (en) 2015-10-13
TWI480942B (zh) 2015-04-11
TW201330078A (zh) 2013-07-16
WO2013031692A1 (ja) 2013-03-07
US20140213151A1 (en) 2014-07-31
JP2013052459A (ja) 2013-03-21
CN103747918A (zh) 2014-04-23
KR101633745B1 (ko) 2016-06-27
KR20140051441A (ko) 2014-04-30

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