CN103747918A - 抛光垫 - Google Patents
抛光垫 Download PDFInfo
- Publication number
- CN103747918A CN103747918A CN201280041433.0A CN201280041433A CN103747918A CN 103747918 A CN103747918 A CN 103747918A CN 201280041433 A CN201280041433 A CN 201280041433A CN 103747918 A CN103747918 A CN 103747918A
- Authority
- CN
- China
- Prior art keywords
- polishing
- light
- polishing pad
- buffer layer
- area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/205—Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/22—Lapping pads for working plane surfaces characterised by a multi-layered structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011-190859 | 2011-09-01 | ||
| JP2011190859A JP5732354B2 (ja) | 2011-09-01 | 2011-09-01 | 研磨パッド |
| PCT/JP2012/071472 WO2013031692A1 (ja) | 2011-09-01 | 2012-08-24 | 研磨パッド |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103747918A true CN103747918A (zh) | 2014-04-23 |
Family
ID=47756182
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201280041433.0A Pending CN103747918A (zh) | 2011-09-01 | 2012-08-24 | 抛光垫 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9156126B2 (enExample) |
| JP (1) | JP5732354B2 (enExample) |
| KR (1) | KR101633745B1 (enExample) |
| CN (1) | CN103747918A (enExample) |
| TW (1) | TWI480942B (enExample) |
| WO (1) | WO2013031692A1 (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107471088A (zh) * | 2016-06-08 | 2017-12-15 | 智胜科技股份有限公司 | 研磨垫及研磨方法 |
| CN109202693A (zh) * | 2017-10-16 | 2019-01-15 | Skc株式会社 | 防泄漏抛光垫及其制造方法 |
| CN111183003A (zh) * | 2017-08-07 | 2020-05-19 | Skc株式会社 | 经表面处理的研磨垫窗口及包含该窗口的研磨垫 |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8961266B2 (en) | 2013-03-15 | 2015-02-24 | Applied Materials, Inc. | Polishing pad with secondary window seal |
| JP7525271B2 (ja) * | 2020-03-03 | 2024-07-30 | 富士紡ホールディングス株式会社 | 研磨パッド及び研磨パッドの製造方法 |
| US11633830B2 (en) * | 2020-06-24 | 2023-04-25 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | CMP polishing pad with uniform window |
| KR102488101B1 (ko) * | 2021-05-04 | 2023-01-12 | 에스케이엔펄스 주식회사 | 연마 패드, 연마 패드의 제조 방법 및 이를 이용한 반도체 소자의 제조 방법 |
| US20230059394A1 (en) * | 2021-07-02 | 2023-02-23 | Skc Solmics Co., Ltd. | Polishing pad and method for manufacturing semiconductor device using the same |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040082287A1 (en) * | 2002-10-28 | 2004-04-29 | Applied Materials, Inc. | Polishing pad with window |
| JP2004327779A (ja) * | 2003-04-25 | 2004-11-18 | Toray Ind Inc | 研磨パッド、研磨装置及び半導体デバイスの製造方法 |
| CN1569398A (zh) * | 2003-04-22 | 2005-01-26 | Jsr株式会社 | 抛光垫及抛光半导体晶片的方法 |
| CN1622289A (zh) * | 2003-11-25 | 2005-06-01 | Cmp罗姆和哈斯电子材料控股公司 | 具有高透光窗口的抛光垫 |
| CN101242931A (zh) * | 2005-08-22 | 2008-08-13 | 应用材料股份有限公司 | 基于光谱的监测化学机械研磨的装置及方法 |
| US7621798B1 (en) * | 2006-03-07 | 2009-11-24 | Applied Materials, Inc. | Reducing polishing pad deformation |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6454630B1 (en) | 1999-09-14 | 2002-09-24 | Applied Materials, Inc. | Rotatable platen having a transparent window for a chemical mechanical polishing apparatus and method of making the same |
| US6524164B1 (en) | 1999-09-14 | 2003-02-25 | Applied Materials, Inc. | Polishing pad with transparent window having reduced window leakage for a chemical mechanical polishing apparatus |
| DE60011798T2 (de) | 1999-09-29 | 2005-11-10 | Rohm and Haas Electronic Materials CMP Holdings, Inc., Wilmington | Schleifkissen |
| US20020137431A1 (en) * | 2001-03-23 | 2002-09-26 | Labunsky Michael A. | Methods and apparatus for polishing and planarization |
| DE60228784D1 (de) * | 2001-04-25 | 2008-10-23 | Jsr Corp | Lichtduchlässiges Polierkissen für eine Halbleiterschleife |
| JP4131632B2 (ja) | 2001-06-15 | 2008-08-13 | 株式会社荏原製作所 | ポリッシング装置及び研磨パッド |
| JP2004327974A (ja) * | 2003-04-09 | 2004-11-18 | Jsr Corp | 研磨パッド、その製造法と製造用金型および半導体ウエハの研磨方法 |
| JP2004343090A (ja) * | 2003-04-22 | 2004-12-02 | Jsr Corp | 研磨パッドおよび半導体ウェハの研磨方法 |
| KR100532440B1 (ko) * | 2003-06-05 | 2005-11-30 | 삼성전자주식회사 | 윈도로의 유체의 침투를 막는 실링 장벽부를 가지는 화학기계적 연마 장비에 사용되는 연마 패드 |
| US7018581B2 (en) * | 2004-06-10 | 2006-03-28 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of forming a polishing pad with reduced stress window |
| US7520968B2 (en) * | 2004-10-05 | 2009-04-21 | Applied Materials, Inc. | Conductive pad design modification for better wafer-pad contact |
| JP5146927B2 (ja) | 2006-10-18 | 2013-02-20 | 東洋ゴム工業株式会社 | 長尺研磨パッドの製造方法 |
| JP2008226911A (ja) * | 2007-03-08 | 2008-09-25 | Jsr Corp | 化学機械研磨用パッド、化学機械研磨用積層体パッド、および化学機械研磨方法 |
| JP5274798B2 (ja) * | 2007-08-20 | 2013-08-28 | 東洋ゴム工業株式会社 | 研磨パッド及びその製造方法 |
| US8083570B2 (en) | 2008-10-17 | 2011-12-27 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad having sealed window |
-
2011
- 2011-09-01 JP JP2011190859A patent/JP5732354B2/ja not_active Expired - Fee Related
-
2012
- 2012-08-24 CN CN201280041433.0A patent/CN103747918A/zh active Pending
- 2012-08-24 KR KR1020147007404A patent/KR101633745B1/ko not_active Expired - Fee Related
- 2012-08-24 US US14/241,008 patent/US9156126B2/en active Active
- 2012-08-24 WO PCT/JP2012/071472 patent/WO2013031692A1/ja not_active Ceased
- 2012-08-30 TW TW101131547A patent/TWI480942B/zh not_active IP Right Cessation
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040082287A1 (en) * | 2002-10-28 | 2004-04-29 | Applied Materials, Inc. | Polishing pad with window |
| CN1569398A (zh) * | 2003-04-22 | 2005-01-26 | Jsr株式会社 | 抛光垫及抛光半导体晶片的方法 |
| JP2004327779A (ja) * | 2003-04-25 | 2004-11-18 | Toray Ind Inc | 研磨パッド、研磨装置及び半導体デバイスの製造方法 |
| CN1622289A (zh) * | 2003-11-25 | 2005-06-01 | Cmp罗姆和哈斯电子材料控股公司 | 具有高透光窗口的抛光垫 |
| CN101242931A (zh) * | 2005-08-22 | 2008-08-13 | 应用材料股份有限公司 | 基于光谱的监测化学机械研磨的装置及方法 |
| US7621798B1 (en) * | 2006-03-07 | 2009-11-24 | Applied Materials, Inc. | Reducing polishing pad deformation |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107471088A (zh) * | 2016-06-08 | 2017-12-15 | 智胜科技股份有限公司 | 研磨垫及研磨方法 |
| CN107471088B (zh) * | 2016-06-08 | 2020-07-03 | 智胜科技股份有限公司 | 研磨垫及研磨方法 |
| CN111183003A (zh) * | 2017-08-07 | 2020-05-19 | Skc株式会社 | 经表面处理的研磨垫窗口及包含该窗口的研磨垫 |
| CN109202693A (zh) * | 2017-10-16 | 2019-01-15 | Skc株式会社 | 防泄漏抛光垫及其制造方法 |
| CN109202693B (zh) * | 2017-10-16 | 2021-10-12 | Skc索密思株式会社 | 防泄漏抛光垫及其制造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US9156126B2 (en) | 2015-10-13 |
| TWI480942B (zh) | 2015-04-11 |
| TW201330078A (zh) | 2013-07-16 |
| WO2013031692A1 (ja) | 2013-03-07 |
| US20140213151A1 (en) | 2014-07-31 |
| JP5732354B2 (ja) | 2015-06-10 |
| JP2013052459A (ja) | 2013-03-21 |
| KR101633745B1 (ko) | 2016-06-27 |
| KR20140051441A (ko) | 2014-04-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20140423 |