JP5725865B2 - プラズマ処理装置、及び大気圧グロー放電電極構成を使用して基板を処理するための方法 - Google Patents
プラズマ処理装置、及び大気圧グロー放電電極構成を使用して基板を処理するための方法 Download PDFInfo
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- JP5725865B2 JP5725865B2 JP2010547580A JP2010547580A JP5725865B2 JP 5725865 B2 JP5725865 B2 JP 5725865B2 JP 2010547580 A JP2010547580 A JP 2010547580A JP 2010547580 A JP2010547580 A JP 2010547580A JP 5725865 B2 JP5725865 B2 JP 5725865B2
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- BOYBHDHQCOROOJ-UHFFFAOYSA-N n-[butylamino(dimethyl)silyl]butan-1-amine Chemical compound CCCCN[Si](C)(C)NCCCC BOYBHDHQCOROOJ-UHFFFAOYSA-N 0.000 description 1
- QULMGWCCKILBTO-UHFFFAOYSA-N n-[dimethylamino(dimethyl)silyl]-n-methylmethanamine Chemical compound CN(C)[Si](C)(C)N(C)C QULMGWCCKILBTO-UHFFFAOYSA-N 0.000 description 1
- FTURFVPIEOKJBC-UHFFFAOYSA-N n-[dimethylamino(diphenyl)silyl]-n-methylmethanamine Chemical compound C=1C=CC=CC=1[Si](N(C)C)(N(C)C)C1=CC=CC=C1 FTURFVPIEOKJBC-UHFFFAOYSA-N 0.000 description 1
- VBYLGQXERITIBP-UHFFFAOYSA-N n-[dimethylamino(methyl)silyl]-n-methylmethanamine Chemical compound CN(C)[SiH](C)N(C)C VBYLGQXERITIBP-UHFFFAOYSA-N 0.000 description 1
- NGAVXENYOVMGDJ-UHFFFAOYSA-N n-[ethylamino(dimethyl)silyl]ethanamine Chemical compound CCN[Si](C)(C)NCC NGAVXENYOVMGDJ-UHFFFAOYSA-N 0.000 description 1
- KNLUHXUFCCNNIB-UHFFFAOYSA-N n-dimethylsilyl-n-methylmethanamine Chemical compound CN(C)[SiH](C)C KNLUHXUFCCNNIB-UHFFFAOYSA-N 0.000 description 1
- KAHVZNKZQFSBFW-UHFFFAOYSA-N n-methyl-n-trimethylsilylmethanamine Chemical compound CN(C)[Si](C)(C)C KAHVZNKZQFSBFW-UHFFFAOYSA-N 0.000 description 1
- IPJPAQIHUIKFLV-UHFFFAOYSA-N n-trimethylsilylaniline Chemical compound C[Si](C)(C)NC1=CC=CC=C1 IPJPAQIHUIKFLV-UHFFFAOYSA-N 0.000 description 1
- FFJKAASRNUVNRT-UHFFFAOYSA-N n-trimethylsilylprop-2-en-1-amine Chemical compound C[Si](C)(C)NCC=C FFJKAASRNUVNRT-UHFFFAOYSA-N 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- HMMGMWAXVFQUOA-UHFFFAOYSA-N octamethylcyclotetrasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 HMMGMWAXVFQUOA-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- GTKDYPCMOLSVTH-UHFFFAOYSA-N phenyl-piperazin-1-yl-propan-2-ylsilane Chemical compound CC([SiH](N1CCNCC1)C1=CC=CC=C1)C GTKDYPCMOLSVTH-UHFFFAOYSA-N 0.000 description 1
- 230000001699 photocatalysis Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- OGHBATFHNDZKSO-UHFFFAOYSA-N propan-2-olate Chemical compound CC(C)[O-] OGHBATFHNDZKSO-UHFFFAOYSA-N 0.000 description 1
- GPQVVAFBSNIQLX-UHFFFAOYSA-N propan-2-olate;tin(2+) Chemical compound CC(C)O[Sn]OC(C)C GPQVVAFBSNIQLX-UHFFFAOYSA-N 0.000 description 1
- WWFXSPBGYMPHHC-UHFFFAOYSA-N propan-2-yl(propan-2-yloxy)tin Chemical compound CC(C)O[Sn]C(C)C WWFXSPBGYMPHHC-UHFFFAOYSA-N 0.000 description 1
- JTBKFHQUYVNHSR-UHFFFAOYSA-N propan-2-yloxyalumane Chemical compound CC(C)O[AlH2] JTBKFHQUYVNHSR-UHFFFAOYSA-N 0.000 description 1
- MVKUHFGZBFINJS-UHFFFAOYSA-N propan-2-yloxyboron Chemical compound [B]OC(C)C MVKUHFGZBFINJS-UHFFFAOYSA-N 0.000 description 1
- PXDRFTPXHTVDFR-UHFFFAOYSA-N propane;titanium(4+) Chemical compound [Ti+4].C[CH-]C.C[CH-]C.C[CH-]C.C[CH-]C PXDRFTPXHTVDFR-UHFFFAOYSA-N 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 229920005573 silicon-containing polymer Polymers 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- KXCAEQNNTZANTK-UHFFFAOYSA-N stannane Chemical compound [SnH4] KXCAEQNNTZANTK-UHFFFAOYSA-N 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- KEBMUYGRNKVZOX-UHFFFAOYSA-N tetra(propan-2-yl)silane Chemical compound CC(C)[Si](C(C)C)(C(C)C)C(C)C KEBMUYGRNKVZOX-UHFFFAOYSA-N 0.000 description 1
- REWDXIKKFOQRID-UHFFFAOYSA-N tetrabutylsilane Chemical compound CCCC[Si](CCCC)(CCCC)CCCC REWDXIKKFOQRID-UHFFFAOYSA-N 0.000 description 1
- AFCAKJKUYFLYFK-UHFFFAOYSA-N tetrabutyltin Chemical compound CCCC[Sn](CCCC)(CCCC)CCCC AFCAKJKUYFLYFK-UHFFFAOYSA-N 0.000 description 1
- VCZQFJFZMMALHB-UHFFFAOYSA-N tetraethylsilane Chemical compound CC[Si](CC)(CC)CC VCZQFJFZMMALHB-UHFFFAOYSA-N 0.000 description 1
- MNWRORMXBIWXCI-UHFFFAOYSA-N tetrakis(dimethylamido)titanium Chemical compound CN(C)[Ti](N(C)C)(N(C)C)N(C)C MNWRORMXBIWXCI-UHFFFAOYSA-N 0.000 description 1
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 1
- ZUEKXCXHTXJYAR-UHFFFAOYSA-N tetrapropan-2-yl silicate Chemical compound CC(C)O[Si](OC(C)C)(OC(C)C)OC(C)C ZUEKXCXHTXJYAR-UHFFFAOYSA-N 0.000 description 1
- 229910000083 tin tetrahydride Inorganic materials 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 1
- YONPGGFAJWQGJC-UHFFFAOYSA-K titanium(iii) chloride Chemical compound Cl[Ti](Cl)Cl YONPGGFAJWQGJC-UHFFFAOYSA-K 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- YGBFTDQFAKDXBZ-UHFFFAOYSA-N tributyl stiborite Chemical compound [Sb+3].CCCC[O-].CCCC[O-].CCCC[O-] YGBFTDQFAKDXBZ-UHFFFAOYSA-N 0.000 description 1
- BXJWDOYMROEHEN-UHFFFAOYSA-N tributylstibane Chemical compound CCCC[Sb](CCCC)CCCC BXJWDOYMROEHEN-UHFFFAOYSA-N 0.000 description 1
- VCSUQOHFBBQHQV-UHFFFAOYSA-N triethoxy(methyl)stannane Chemical compound CCO[Sn](C)(OCC)OCC VCSUQOHFBBQHQV-UHFFFAOYSA-N 0.000 description 1
- NBXZNTLFQLUFES-UHFFFAOYSA-N triethoxy(propyl)silane Chemical compound CCC[Si](OCC)(OCC)OCC NBXZNTLFQLUFES-UHFFFAOYSA-N 0.000 description 1
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 1
- HQYALQRYBUJWDH-UHFFFAOYSA-N trimethoxy(propyl)silane Chemical compound CCC[Si](OC)(OC)OC HQYALQRYBUJWDH-UHFFFAOYSA-N 0.000 description 1
- JNONUPYOIZXSNQ-UHFFFAOYSA-N trimethyl(2-piperidin-1-ylethyl)silane Chemical compound C[Si](C)(C)CCN1CCCCC1 JNONUPYOIZXSNQ-UHFFFAOYSA-N 0.000 description 1
- FLQNGSAFRFEKNU-UHFFFAOYSA-N trimethyl(3-piperidin-1-ylpropyl)silane Chemical compound C[Si](C)(C)CCCN1CCCCC1 FLQNGSAFRFEKNU-UHFFFAOYSA-N 0.000 description 1
- WNHFEQWRHXLCMK-UHFFFAOYSA-N trimethyl(pyrrol-1-yl)silane Chemical compound C[Si](C)(C)N1C=CC=C1 WNHFEQWRHXLCMK-UHFFFAOYSA-N 0.000 description 1
- YVWPNDBYAAEZBF-UHFFFAOYSA-N trimethylsilylmethanamine Chemical compound C[Si](C)(C)CN YVWPNDBYAAEZBF-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/515—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using pulsed discharges
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32018—Glow discharge
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- H01J37/32348—Dielectric barrier discharge
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- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
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Description
g*d≦1.0mm2
を満足する場合、処理された基板7又は処理された基板6及び7は、水蒸気透過率(WVTR)などの優れたバリア特性、優れた粗さ特性を有することが分かった。この処理方法を使用して層を堆積させる場合、堆積したバリアも同じく小さい炭素濃度を有している。この新しい方法によれば、炭素濃度が0.5重量%未満、さらには0.1重量%未満のバリアを備えた新しい滑らかな製品を提供することができる。
Aは、カルシウム厚さとODの間のスケーリング因子であり、M[H2O]及びM[Ca]は、それぞれ18単位及び40.1単位の値の水及びCaのモル質量であり、Caはカルシウムの密度であり、LCa及びWCaは、堆積したCaの長さ及び幅であり、Ls及びWsは、内部境界によって画定される透過領域の長さ及び幅であり、d(OD)/dtは、測定された光吸光度対時間の勾配である。
Claims (10)
- 基板(6、7)を処理するためのプラズマ処理装置であって、少なくとも2つの対向電極(2、3)と、前記少なくとも2つの対向電極(2、3)の間の処理空間(5)とを備えており、誘電体バリア(6、7;2a、3a)が、前記少なくとも2つの対向電極(2、3)の間の前記処理空間(5)に設けられているとともに動作中には前記基板(6、7)を含んでおり、前記少なくとも2つの対向電極(2、3)が、前記処理空間(5)に大気圧グロー放電プラズマを生成するためのプラズマ制御ユニット(4)に接続され、ギャップ距離(g)が、動作中における前記少なくとも2つの対向電極(2、3)の間に存在する自由ギャップの前記処理空間(5)における距離であり、前記ギャップ距離(g)が1mm未満であり、総誘電体距離(d)が、前記少なくとも2つの対向電極(2、3)の間の前記基板(6、7)を含めた前記誘電体バリア(6、7;2a、3a)の誘電体厚さであり、また、
前記プラズマ制御ユニット(4)が、ギャップ距離(g)と総誘電体距離(d)の積の値を0.1mm2以下になるように制御するようになされたプラズマ処理装置。 - 前記総誘電体距離(d)が1mm以下である、請求項1に記載のプラズマ処理装置。
- 前記ギャップ距離(g)が0.8mm以下である、請求項1に記載のプラズマ処理装置。
- 前記少なくとも2つの対向電極(2、3)のうちの1つ又は複数がロール状の電極である、請求項1に記載のプラズマ処理装置。
- 基板(6、7)をプラズマ処理するための方法であって、少なくとも2つの対向電極(2、3)と、前記少なくとも2つの対向電極(2、3)の間の、動作中に前記基板(6、7)が存在している処理空間(5)の誘電体バリア(6、7;2a、3a)とを使用して、動作中に前記基板(6、7)が存在している前記処理空間(5)に大気圧グロー放電プラズマを生成するステップを含み、
ギャップ距離(g)が、動作中における前記少なくとも2つの対向電極(2、3)の間に存在する自由ギャップの前記処理空間(5)における距離であり、前記ギャップ距離(g)が1mm未満であり、総誘電体距離(d)が前記誘電体バリア(6、7;2a、3a)の誘電体厚さであり、また、
ギャップ距離(g)と総誘電体距離(d)の積が0.1mm2以下の値になるように制御される方法。 - 前記総誘電体距離(d)が1mm以下である、請求項5に記載の方法。
- 前記ギャップ距離(g)が0.8mm以下である、請求項5に記載の方法。
- ポリマー基板の上に1つ又は複数の無機バリア層が堆積され、前記1つ又は複数の無機バリア層の一番上の面が、前記1つ又は複数の無機バリア層の厚さ又は量に無関係に、前記基板の表面粗さより最大20%大きい表面粗さを有する、請求項5に記載の方法。
- ポリマー基板の上に1つ又は複数の無機バリア層が堆積され、前記1つ又は複数の無機バリア層が0.1重量%未満の炭素濃度を有する、請求項5に記載の方法。
- 前記少なくとも2つの対向電極(2、3)のうちの1つがロール状の電極である、請求項5に記載の方法。
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP08151765 | 2008-02-21 | ||
EP08151765.8 | 2008-02-21 | ||
EP08165019 | 2008-09-24 | ||
EP08165019.4 | 2008-09-24 | ||
EP08168741 | 2008-11-10 | ||
EP08168741.0 | 2008-11-10 | ||
PCT/NL2009/050057 WO2009104957A1 (en) | 2008-02-21 | 2009-02-10 | Plasma treatment apparatus and method for treatment of a substrate with atmospheric pressure glow discharge electrode configuration |
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JP2011512459A JP2011512459A (ja) | 2011-04-21 |
JP5725865B2 true JP5725865B2 (ja) | 2015-05-27 |
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JP2010547580A Active JP5725865B2 (ja) | 2008-02-21 | 2009-02-10 | プラズマ処理装置、及び大気圧グロー放電電極構成を使用して基板を処理するための方法 |
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US (1) | US20110014424A1 (ja) |
EP (2) | EP2245647B1 (ja) |
JP (1) | JP5725865B2 (ja) |
WO (1) | WO2009104957A1 (ja) |
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US20080317974A1 (en) * | 2005-08-26 | 2008-12-25 | Fujifilm Manufacturing Europe B.V. | Method and Arrangement for Generating and Controlling a Discharge Plasma |
US8323753B2 (en) * | 2006-05-30 | 2012-12-04 | Fujifilm Manufacturing Europe B.V. | Method for deposition using pulsed atmospheric pressure glow discharge |
JP5543203B2 (ja) * | 2006-06-16 | 2014-07-09 | フジフィルム マニュファクチャリング ユーロプ ビー.ブイ. | 大気圧グロー放電プラズマを使用した原子層堆積の方法及び装置 |
WO2008100139A1 (en) * | 2007-02-13 | 2008-08-21 | Fujifilm Manufacturing Europe B.V. | Substrate plasma treatment using magnetic mask device |
EP2235735B1 (en) * | 2008-02-01 | 2015-09-30 | Fujifilm Manufacturing Europe B.V. | Method and apparatus for plasma surface treatment of a moving substrate |
EP2241165B1 (en) * | 2008-02-08 | 2011-08-31 | Fujifilm Manufacturing Europe B.V. | Method for manufacturing a multi_layer stack structure with improved wvtr barrier property |
GB0910040D0 (en) * | 2009-06-11 | 2009-07-22 | Fujifilm Mfg Europe Bv | Substrate structure |
IT1397827B1 (it) * | 2010-02-02 | 2013-02-04 | Me Ro S R L Ora Me Ro S P A | Macchina e metodo per il trattamento al plasma atmosferico di substrati continui |
GB201012225D0 (en) * | 2010-07-21 | 2010-09-08 | Fujifilm Mfg Europe Bv | Method for manufacturing a barrier layer on a substrate and a multi-layer stack |
GB201012226D0 (en) * | 2010-07-21 | 2010-09-08 | Fujifilm Mfg Europe Bv | Method for manufacturing a barrier on a sheet and a sheet for PV modules |
GB201110117D0 (en) | 2011-06-16 | 2011-07-27 | Fujifilm Mfg Europe Bv | method and device for manufacturing a barrie layer on a flexible substrate |
US9605376B2 (en) | 2011-06-28 | 2017-03-28 | Mtix Ltd. | Treating materials with combined energy sources |
TR201809190T4 (tr) * | 2011-06-28 | 2018-07-23 | Mtix Ltd | Çoklu kombine enerji kaynakları kullanılarak materyallerin yüzey uygulamasına yönelik yöntem ve aparat. |
GB201117242D0 (en) | 2011-10-06 | 2011-11-16 | Fujifilm Mfg Europe Bv | Method and device for manufacturing a barrier layer on a flexible subtrate |
GB201210836D0 (en) | 2012-06-19 | 2012-08-01 | Fujifilm Mfg Europe Bv | Method and device for manufacturing a barrier layer on a flexible substrate |
US10862073B2 (en) * | 2012-09-25 | 2020-12-08 | The Trustees Of Princeton University | Barrier film for electronic devices and substrates |
ITBO20120612A1 (it) * | 2012-11-07 | 2014-05-08 | Veneto Nanotech S C P A | Procedimento per il trattamento di un substrato in fibre e macchina per attuare tale procedimento. |
EP3087619A1 (en) * | 2013-12-23 | 2016-11-02 | Solvay Specialty Polymers Italy S.p.A. | Display devices |
US10542613B2 (en) * | 2016-04-04 | 2020-01-21 | University Of South Carolina | Suppression of self pulsing DC driven nonthermal microplasma discharge to operate in a steady DC mode |
KR20210105289A (ko) * | 2020-02-14 | 2021-08-26 | 에이에스엠 아이피 홀딩 비.브이. | 펄스형 플라즈마 전력을 사용하여 유전체 재료 층을 형성하기 위한 방법, 이 층을 포함한 구조물 및 소자, 그리고 이 층을 형성하기 위한 시스템 |
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FR2704558B1 (fr) * | 1993-04-29 | 1995-06-23 | Air Liquide | Procede et dispositif pour creer un depot d'oxyde de silicium sur un substrat solide en defilement. |
JP3148910B2 (ja) | 1993-09-01 | 2001-03-26 | 日本真空技術株式会社 | プラズマcvd成膜方法 |
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JP2000082595A (ja) * | 1998-07-08 | 2000-03-21 | Sekisui Chem Co Ltd | シート状基材の放電プラズマ処理方法及びその装置 |
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JP2002322558A (ja) * | 2001-04-25 | 2002-11-08 | Konica Corp | 薄膜形成方法、光学フィルム、偏光板及び画像表示装置 |
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TWI273143B (en) | 2002-06-10 | 2007-02-11 | Konica Corp | Layer formation method, and substrate with a layer formed by the method |
US6774569B2 (en) * | 2002-07-11 | 2004-08-10 | Fuji Photo Film B.V. | Apparatus for producing and sustaining a glow discharge plasma under atmospheric conditions |
US7288204B2 (en) * | 2002-07-19 | 2007-10-30 | Fuji Photo Film B.V. | Method and arrangement for treating a substrate with an atmospheric pressure glow plasma (APG) |
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EP1403902A1 (en) | 2002-09-30 | 2004-03-31 | Fuji Photo Film B.V. | Method and arrangement for generating an atmospheric pressure glow discharge plasma (APG) |
CA2537075A1 (en) | 2003-09-09 | 2005-06-02 | Dow Global Technolgies Inc. | Glow discharge-generated chemical vapor deposition |
WO2005062338A1 (en) * | 2003-12-22 | 2005-07-07 | Fuji Photo Film B. V. | Method of and arrangement for removing contaminants from a substrate surface using an atmospheric pressure glow plasma |
JP2005353577A (ja) * | 2004-06-10 | 2005-12-22 | Samsung Sdi Co Ltd | 有機電界発光表示装置及びその製造方法 |
ATE348497T1 (de) | 2004-08-13 | 2007-01-15 | Fuji Photo Film Bv | Verfahren und vorrichtung zur steuerung eines glühentladungsplasmas unter atmosphärischem druck |
US8652625B2 (en) * | 2004-09-21 | 2014-02-18 | Konica Minolta Holdings, Inc. | Transparent gas barrier film |
US7615931B2 (en) * | 2005-05-02 | 2009-11-10 | International Technology Center | Pulsed dielectric barrier discharge |
CN101142022B (zh) * | 2005-07-15 | 2011-06-15 | 东芝三菱电机产业系统株式会社 | 光催化材料生产方法和光催化材料生产设备 |
US20080317974A1 (en) * | 2005-08-26 | 2008-12-25 | Fujifilm Manufacturing Europe B.V. | Method and Arrangement for Generating and Controlling a Discharge Plasma |
JP2009525381A (ja) * | 2006-02-02 | 2009-07-09 | フジフィルム マニュファクチャリング ユーロプ ビー.ブイ. | プラズマによる表面処理方法及び表面処理装置 |
JP5543203B2 (ja) * | 2006-06-16 | 2014-07-09 | フジフィルム マニュファクチャリング ユーロプ ビー.ブイ. | 大気圧グロー放電プラズマを使用した原子層堆積の方法及び装置 |
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2009
- 2009-02-10 EP EP09713583A patent/EP2245647B1/en not_active Not-in-force
- 2009-02-10 EP EP12175744.7A patent/EP2528082A3/en not_active Withdrawn
- 2009-02-10 WO PCT/NL2009/050057 patent/WO2009104957A1/en active Application Filing
- 2009-02-10 JP JP2010547580A patent/JP5725865B2/ja active Active
- 2009-02-10 US US12/735,821 patent/US20110014424A1/en not_active Abandoned
Also Published As
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WO2009104957A1 (en) | 2009-08-27 |
JP2011512459A (ja) | 2011-04-21 |
EP2528082A2 (en) | 2012-11-28 |
US20110014424A1 (en) | 2011-01-20 |
EP2245647A1 (en) | 2010-11-03 |
EP2245647B1 (en) | 2012-08-01 |
EP2528082A3 (en) | 2014-11-05 |
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