JP5722428B2 - Ｒｆエネルギが中心に給送される物理蒸着のための装置 - Google Patents

Ｒｆエネルギが中心に給送される物理蒸着のための装置 Download PDF

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JP5722428B2
JP5722428B2 JP2013502704A JP2013502704A JP5722428B2 JP 5722428 B2 JP5722428 B2 JP 5722428B2 JP 2013502704 A JP2013502704 A JP 2013502704A JP 2013502704 A JP2013502704 A JP 2013502704A JP 5722428 B2 JP5722428 B2 JP 5722428B2
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energy
target
disposed
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slots
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JP2013524012A (ja
JP2013524012A5 (enExample
Inventor
ムハンマド ラシード
ムハンマド ラシード
ララ ホリルチャック
ララ ホリルチャック
マイケル エス コックス
マイケル エス コックス
ドニー ヤング
ドニー ヤング
キランクマル サヴァンダイア
キランクマル サヴァンダイア
アラン リッチー
アラン リッチー
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Plasma Technology (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP2013502704A 2010-03-31 2011-03-28 Ｒｆエネルギが中心に給送される物理蒸着のための装置 Active JP5722428B2 (ja)

Applications Claiming Priority (11)

Application Number Priority Date Filing Date Title
US31937710P 2010-03-31 2010-03-31
US61/319,377 2010-03-31
US32872510P 2010-04-28 2010-04-28
US61/328,725 2010-04-28
US37177410P 2010-08-09 2010-08-09
US61/371,774 2010-08-09
US39330910P 2010-10-14 2010-10-14
US61/393,309 2010-10-14
US13/048,440 US8795488B2 (en) 2010-03-31 2011-03-15 Apparatus for physical vapor deposition having centrally fed RF energy
US13/048,440 2011-03-15
PCT/US2011/030226 WO2011123399A2 (en) 2010-03-31 2011-03-28 Apparatus for physical vapor deposition having centrally fed rf energy

Publications (3)

Publication Number Publication Date
JP2013524012A JP2013524012A (ja) 2013-06-17
JP2013524012A5 JP2013524012A5 (enExample) 2014-05-15
JP5722428B2 true JP5722428B2 (ja) 2015-05-20

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ID=44708340

Family Applications (1)

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JP2013502704A Active JP5722428B2 (ja) 2010-03-31 2011-03-28 Ｒｆエネルギが中心に給送される物理蒸着のための装置

Country Status (6)

Country Link
US (1) US8795488B2 (enExample)
JP (1) JP5722428B2 (enExample)
KR (1) KR101801760B1 (enExample)
CN (1) CN102859029B (enExample)
TW (1) TWI521081B (enExample)
WO (1) WO2011123399A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2914833B2 (ja) 1992-09-14 1999-07-05 シャープ株式会社 半導体レーザ

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010115128A2 (en) * 2009-04-03 2010-10-07 Applied Materials, Inc. High pressure rf-dc sputtering and methods to improve film uniformity and step-coverage of this process
US11615941B2 (en) 2009-05-01 2023-03-28 Advanced Energy Industries, Inc. System, method, and apparatus for controlling ion energy distribution in plasma processing systems
US9087679B2 (en) 2011-02-09 2015-07-21 Applied Materials, Inc. Uniformity tuning capable ESC grounding kit for RF PVD chamber
US8702918B2 (en) 2011-12-15 2014-04-22 Applied Materials, Inc. Apparatus for enabling concentricity of plasma dark space
US9404174B2 (en) 2011-12-15 2016-08-02 Applied Materials, Inc. Pinned target design for RF capacitive coupled plasma
US9685297B2 (en) 2012-08-28 2017-06-20 Advanced Energy Industries, Inc. Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system
US20140061039A1 (en) * 2012-09-05 2014-03-06 Applied Materials, Inc. Target cooling for physical vapor deposition (pvd) processing systems
CN103849848B (zh) * 2012-11-28 2016-08-31 北京北方微电子基地设备工艺研究中心有限责任公司 物理气相沉积装置
CN105706212B (zh) * 2013-11-05 2018-11-20 应用材料公司 溅射沉积源、溅射沉积的设备及其组装方法
US9960021B2 (en) * 2013-12-18 2018-05-01 Applied Materials, Inc. Physical vapor deposition (PVD) target having low friction pads
IL261173B2 (en) * 2016-03-05 2023-03-01 Applied Materials Inc Methods and device for controlling ionic fraction in physical vapor deposition processes
US10224224B2 (en) 2017-03-10 2019-03-05 Micromaterials, LLC High pressure wafer processing systems and related methods
US10622214B2 (en) 2017-05-25 2020-04-14 Applied Materials, Inc. Tungsten defluorination by high pressure treatment
KR102405723B1 (ko) 2017-08-18 2022-06-07 어플라이드 머티어리얼스, 인코포레이티드 고압 및 고온 어닐링 챔버
US10276411B2 (en) 2017-08-18 2019-04-30 Applied Materials, Inc. High pressure and high temperature anneal chamber
CN117936417A (zh) 2017-11-11 2024-04-26 微材料有限责任公司 用于高压处理腔室的气体输送系统
PL3711080T3 (pl) * 2017-11-17 2023-12-11 Aes Global Holdings, Pte. Ltd. Zsynchronizowane pulsowanie źródła przetwarzania plazmy oraz polaryzacji podłoża
US11437221B2 (en) 2017-11-17 2022-09-06 Advanced Energy Industries, Inc. Spatial monitoring and control of plasma processing environments
CN111788655B (zh) 2017-11-17 2024-04-05 先进工程解决方案全球控股私人有限公司 对等离子体处理的离子偏置电压的空间和时间控制
KR20200075892A (ko) 2017-11-17 2020-06-26 어플라이드 머티어리얼스, 인코포레이티드 고압 처리 시스템을 위한 컨덴서 시스템
US12230476B2 (en) 2017-11-17 2025-02-18 Advanced Energy Industries, Inc. Integrated control of a plasma processing system
KR102877884B1 (ko) 2017-11-17 2025-11-04 에이이에스 글로벌 홀딩스 피티이 리미티드 플라즈마 프로세싱 시스템에서 변조 공급기들의 개선된 적용
JP7239598B2 (ja) 2018-03-09 2023-03-14 アプライド マテリアルズ インコーポレイテッド 金属含有材料の高圧アニーリングプロセス
US10950429B2 (en) 2018-05-08 2021-03-16 Applied Materials, Inc. Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom
US10748783B2 (en) 2018-07-25 2020-08-18 Applied Materials, Inc. Gas delivery module
WO2020117462A1 (en) 2018-12-07 2020-06-11 Applied Materials, Inc. Semiconductor processing system
JP7603649B2 (ja) 2019-07-12 2024-12-20 エーイーエス グローバル ホールディングス， プライベート リミテッド 単一制御型スイッチを伴うバイアス供給装置
US11901222B2 (en) 2020-02-17 2024-02-13 Applied Materials, Inc. Multi-step process for flowable gap-fill film
US12125674B2 (en) 2020-05-11 2024-10-22 Advanced Energy Industries, Inc. Surface charge and power feedback and control using a switch mode bias system
TWI787823B (zh) * 2021-05-17 2022-12-21 天虹科技股份有限公司 可減少微塵的基板處理腔室及其遮擋機構
JP2023048694A (ja) * 2021-09-28 2023-04-07 芝浦メカトロニクス株式会社 成膜装置
US11670487B1 (en) 2022-01-26 2023-06-06 Advanced Energy Industries, Inc. Bias supply control and data processing
US12046448B2 (en) 2022-01-26 2024-07-23 Advanced Energy Industries, Inc. Active switch on time control for bias supply
US11942309B2 (en) 2022-01-26 2024-03-26 Advanced Energy Industries, Inc. Bias supply with resonant switching
US11978613B2 (en) 2022-09-01 2024-05-07 Advanced Energy Industries, Inc. Transition control in a bias supply

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01309965A (ja) 1988-06-08 1989-12-14 Matsushita Electric Ind Co Ltd マグネトロンスパッタ装置
US5482610A (en) * 1991-11-14 1996-01-09 Leybold Aktiengesellschaft Cathode for coating a substrate
JP2001220671A (ja) 1999-12-02 2001-08-14 Anelva Corp スパッタ成膜応用のためのプラズマ処理装置
US6451177B1 (en) 2000-01-21 2002-09-17 Applied Materials, Inc. Vault shaped target and magnetron operable in two sputtering modes
EP1254970A1 (de) * 2001-05-03 2002-11-06 Unaxis Balzers Aktiengesellschaft Magnetronsputterquelle mit mehrteiligem Target
JP4614578B2 (ja) 2001-06-01 2011-01-19 キヤノンアネルバ株式会社 スパッタ成膜応用のためのプラズマ処理装置
US7504006B2 (en) 2002-08-01 2009-03-17 Applied Materials, Inc. Self-ionized and capacitively-coupled plasma for sputtering and resputtering
US7179351B1 (en) 2003-12-15 2007-02-20 Novellus Systems, Inc. Methods and apparatus for magnetron sputtering
US20060172536A1 (en) 2005-02-03 2006-08-03 Brown Karl M Apparatus for plasma-enhanced physical vapor deposition of copper with RF source power applied through the workpiece
US8557094B2 (en) 2006-10-05 2013-10-15 Applied Materials, Inc. Sputtering chamber having auxiliary backside magnet to improve etch uniformity and magnetron producing sustained self sputtering of ruthenium and tantalum
WO2009014394A2 (en) * 2007-07-25 2009-01-29 Nuricell, Inc. Method for depositing ceramic thin film by sputtering using non-conductive target
US8070925B2 (en) 2008-10-17 2011-12-06 Applied Materials, Inc. Physical vapor deposition reactor with circularly symmetric RF feed and DC feed to the sputter target
US9834840B2 (en) * 2010-05-14 2017-12-05 Applied Materials, Inc. Process kit shield for improved particle reduction
TWI554630B (zh) * 2010-07-02 2016-10-21 應用材料股份有限公司 減少沉積不對稱性的沉積設備及方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2914833B2 (ja) 1992-09-14 1999-07-05 シャープ株式会社 半導体レーザ

Also Published As

Publication number Publication date
US8795488B2 (en) 2014-08-05
JP2013524012A (ja) 2013-06-17
WO2011123399A3 (en) 2012-01-26
KR101801760B1 (ko) 2017-11-27
US20110240464A1 (en) 2011-10-06
TWI521081B (zh) 2016-02-11
WO2011123399A2 (en) 2011-10-06
CN102859029B (zh) 2014-08-06
KR20130008596A (ko) 2013-01-22
CN102859029A (zh) 2013-01-02
TW201142068A (en) 2011-12-01

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