KR101801760B1 - Ｒｆ 에너지가 중심에 공급되는 물리적 기상 증착용 장치 - Google Patents

Ｒｆ 에너지가 중심에 공급되는 물리적 기상 증착용 장치 Download PDF

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KR101801760B1
KR101801760B1 KR1020127027934A KR20127027934A KR101801760B1 KR 101801760 B1 KR101801760 B1 KR 101801760B1 KR 1020127027934 A KR1020127027934 A KR 1020127027934A KR 20127027934 A KR20127027934 A KR 20127027934A KR 101801760 B1 KR101801760 B1 KR 101801760B1
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energy
disposed
target
distribution plate
vapor deposition
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KR20130008596A (ko
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무하마드 라시드
라라 하우릴착
마이클 에스. 콕스
도니 영
키란쿠마르 사반다이아
알란 릿차이
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어플라이드 머티어리얼스, 인코포레이티드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Plasma Technology (AREA)
KR1020127027934A 2010-03-31 2011-03-28 Ｒｆ 에너지가 중심에 공급되는 물리적 기상 증착용 장치 Active KR101801760B1 (ko)

Applications Claiming Priority (11)

Application Number Priority Date Filing Date Title
US31937710P 2010-03-31 2010-03-31
US61/319,377 2010-03-31
US32872510P 2010-04-28 2010-04-28
US61/328,725 2010-04-28
US37177410P 2010-08-09 2010-08-09
US61/371,774 2010-08-09
US39330910P 2010-10-14 2010-10-14
US61/393,309 2010-10-14
US13/048,440 US8795488B2 (en) 2010-03-31 2011-03-15 Apparatus for physical vapor deposition having centrally fed RF energy
US13/048,440 2011-03-15
PCT/US2011/030226 WO2011123399A2 (en) 2010-03-31 2011-03-28 Apparatus for physical vapor deposition having centrally fed rf energy

Publications (2)

Publication Number Publication Date
KR20130008596A KR20130008596A (ko) 2013-01-22
KR101801760B1 true KR101801760B1 (ko) 2017-11-27

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KR1020127027934A Active KR101801760B1 (ko) 2010-03-31 2011-03-28 Ｒｆ 에너지가 중심에 공급되는 물리적 기상 증착용 장치

Country Status (6)

Country Link
US (1) US8795488B2 (enExample)
JP (1) JP5722428B2 (enExample)
KR (1) KR101801760B1 (enExample)
CN (1) CN102859029B (enExample)
TW (1) TWI521081B (enExample)
WO (1) WO2011123399A2 (enExample)

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US9685297B2 (en) 2012-08-28 2017-06-20 Advanced Energy Industries, Inc. Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system
US20140061039A1 (en) * 2012-09-05 2014-03-06 Applied Materials, Inc. Target cooling for physical vapor deposition (pvd) processing systems
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CN105706212B (zh) * 2013-11-05 2018-11-20 应用材料公司 溅射沉积源、溅射沉积的设备及其组装方法
US9960021B2 (en) * 2013-12-18 2018-05-01 Applied Materials, Inc. Physical vapor deposition (PVD) target having low friction pads
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US10224224B2 (en) 2017-03-10 2019-03-05 Micromaterials, LLC High pressure wafer processing systems and related methods
US10622214B2 (en) 2017-05-25 2020-04-14 Applied Materials, Inc. Tungsten defluorination by high pressure treatment
KR102405723B1 (ko) 2017-08-18 2022-06-07 어플라이드 머티어리얼스, 인코포레이티드 고압 및 고온 어닐링 챔버
US10276411B2 (en) 2017-08-18 2019-04-30 Applied Materials, Inc. High pressure and high temperature anneal chamber
CN117936417A (zh) 2017-11-11 2024-04-26 微材料有限责任公司 用于高压处理腔室的气体输送系统
PL3711080T3 (pl) * 2017-11-17 2023-12-11 Aes Global Holdings, Pte. Ltd. Zsynchronizowane pulsowanie źródła przetwarzania plazmy oraz polaryzacji podłoża
US11437221B2 (en) 2017-11-17 2022-09-06 Advanced Energy Industries, Inc. Spatial monitoring and control of plasma processing environments
CN111788655B (zh) 2017-11-17 2024-04-05 先进工程解决方案全球控股私人有限公司 对等离子体处理的离子偏置电压的空间和时间控制
KR20200075892A (ko) 2017-11-17 2020-06-26 어플라이드 머티어리얼스, 인코포레이티드 고압 처리 시스템을 위한 컨덴서 시스템
US12230476B2 (en) 2017-11-17 2025-02-18 Advanced Energy Industries, Inc. Integrated control of a plasma processing system
KR102877884B1 (ko) 2017-11-17 2025-11-04 에이이에스 글로벌 홀딩스 피티이 리미티드 플라즈마 프로세싱 시스템에서 변조 공급기들의 개선된 적용
JP7239598B2 (ja) 2018-03-09 2023-03-14 アプライド マテリアルズ インコーポレイテッド 金属含有材料の高圧アニーリングプロセス
US10950429B2 (en) 2018-05-08 2021-03-16 Applied Materials, Inc. Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom
US10748783B2 (en) 2018-07-25 2020-08-18 Applied Materials, Inc. Gas delivery module
WO2020117462A1 (en) 2018-12-07 2020-06-11 Applied Materials, Inc. Semiconductor processing system
JP7603649B2 (ja) 2019-07-12 2024-12-20 エーイーエス グローバル ホールディングス， プライベート リミテッド 単一制御型スイッチを伴うバイアス供給装置
US11901222B2 (en) 2020-02-17 2024-02-13 Applied Materials, Inc. Multi-step process for flowable gap-fill film
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TWI787823B (zh) * 2021-05-17 2022-12-21 天虹科技股份有限公司 可減少微塵的基板處理腔室及其遮擋機構
JP2023048694A (ja) * 2021-09-28 2023-04-07 芝浦メカトロニクス株式会社 成膜装置
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WO2010045037A2 (en) 2008-10-17 2010-04-22 Applied Materials, Inc. Physical vapor deposition reactor with circularly symmetric rf feed and dc feed to the sputter target

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Also Published As

Publication number Publication date
US8795488B2 (en) 2014-08-05
JP2013524012A (ja) 2013-06-17
WO2011123399A3 (en) 2012-01-26
US20110240464A1 (en) 2011-10-06
TWI521081B (zh) 2016-02-11
WO2011123399A2 (en) 2011-10-06
CN102859029B (zh) 2014-08-06
KR20130008596A (ko) 2013-01-22
JP5722428B2 (ja) 2015-05-20
CN102859029A (zh) 2013-01-02
TW201142068A (en) 2011-12-01

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