TWI521081B - 具有中心饋送射頻能量的用於物理氣相沉積的裝置 - Google Patents
具有中心饋送射頻能量的用於物理氣相沉積的裝置 Download PDFInfo
- Publication number
- TWI521081B TWI521081B TW100109194A TW100109194A TWI521081B TW I521081 B TWI521081 B TW I521081B TW 100109194 A TW100109194 A TW 100109194A TW 100109194 A TW100109194 A TW 100109194A TW I521081 B TWI521081 B TW I521081B
- Authority
- TW
- Taiwan
- Prior art keywords
- disposed
- target
- energy
- component
- coupled
- Prior art date
Links
- 238000005240 physical vapour deposition Methods 0.000 title claims description 24
- 238000009826 distribution Methods 0.000 claims description 62
- 239000000758 substrate Substances 0.000 claims description 53
- 230000008878 coupling Effects 0.000 claims description 20
- 238000010168 coupling process Methods 0.000 claims description 20
- 238000005859 coupling reaction Methods 0.000 claims description 20
- 230000002093 peripheral effect Effects 0.000 claims description 10
- 239000003989 dielectric material Substances 0.000 claims description 4
- 239000013077 target material Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 description 10
- 239000004020 conductor Substances 0.000 description 8
- 238000000151 deposition Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 8
- 230000005672 electromagnetic field Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 125000006850 spacer group Chemical group 0.000 description 6
- 238000002955 isolation Methods 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000005219 brazing Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000013011 mating Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 238000005477 sputtering target Methods 0.000 description 2
- GXDVEXJTVGRLNW-UHFFFAOYSA-N [Cr].[Cu] Chemical compound [Cr].[Cu] GXDVEXJTVGRLNW-UHFFFAOYSA-N 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- TVZPLCNGKSPOJA-UHFFFAOYSA-N copper zinc Chemical compound [Cu].[Zn] TVZPLCNGKSPOJA-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
- Plasma Technology (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US31937710P | 2010-03-31 | 2010-03-31 | |
| US32872510P | 2010-04-28 | 2010-04-28 | |
| US37177410P | 2010-08-09 | 2010-08-09 | |
| US39330910P | 2010-10-14 | 2010-10-14 | |
| US13/048,440 US8795488B2 (en) | 2010-03-31 | 2011-03-15 | Apparatus for physical vapor deposition having centrally fed RF energy |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201142068A TW201142068A (en) | 2011-12-01 |
| TWI521081B true TWI521081B (zh) | 2016-02-11 |
Family
ID=44708340
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100109194A TWI521081B (zh) | 2010-03-31 | 2011-03-17 | 具有中心饋送射頻能量的用於物理氣相沉積的裝置 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8795488B2 (enExample) |
| JP (1) | JP5722428B2 (enExample) |
| KR (1) | KR101801760B1 (enExample) |
| CN (1) | CN102859029B (enExample) |
| TW (1) | TWI521081B (enExample) |
| WO (1) | WO2011123399A2 (enExample) |
Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2914833B2 (ja) | 1992-09-14 | 1999-07-05 | シャープ株式会社 | 半導体レーザ |
| WO2010115128A2 (en) * | 2009-04-03 | 2010-10-07 | Applied Materials, Inc. | High pressure rf-dc sputtering and methods to improve film uniformity and step-coverage of this process |
| US11615941B2 (en) | 2009-05-01 | 2023-03-28 | Advanced Energy Industries, Inc. | System, method, and apparatus for controlling ion energy distribution in plasma processing systems |
| US9087679B2 (en) | 2011-02-09 | 2015-07-21 | Applied Materials, Inc. | Uniformity tuning capable ESC grounding kit for RF PVD chamber |
| US8702918B2 (en) | 2011-12-15 | 2014-04-22 | Applied Materials, Inc. | Apparatus for enabling concentricity of plasma dark space |
| US9404174B2 (en) | 2011-12-15 | 2016-08-02 | Applied Materials, Inc. | Pinned target design for RF capacitive coupled plasma |
| US9685297B2 (en) | 2012-08-28 | 2017-06-20 | Advanced Energy Industries, Inc. | Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system |
| US20140061039A1 (en) * | 2012-09-05 | 2014-03-06 | Applied Materials, Inc. | Target cooling for physical vapor deposition (pvd) processing systems |
| CN103849848B (zh) * | 2012-11-28 | 2016-08-31 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 物理气相沉积装置 |
| CN105706212B (zh) * | 2013-11-05 | 2018-11-20 | 应用材料公司 | 溅射沉积源、溅射沉积的设备及其组装方法 |
| US9960021B2 (en) * | 2013-12-18 | 2018-05-01 | Applied Materials, Inc. | Physical vapor deposition (PVD) target having low friction pads |
| IL261173B2 (en) * | 2016-03-05 | 2023-03-01 | Applied Materials Inc | Methods and device for controlling ionic fraction in physical vapor deposition processes |
| US10224224B2 (en) | 2017-03-10 | 2019-03-05 | Micromaterials, LLC | High pressure wafer processing systems and related methods |
| US10622214B2 (en) | 2017-05-25 | 2020-04-14 | Applied Materials, Inc. | Tungsten defluorination by high pressure treatment |
| KR102405723B1 (ko) | 2017-08-18 | 2022-06-07 | 어플라이드 머티어리얼스, 인코포레이티드 | 고압 및 고온 어닐링 챔버 |
| US10276411B2 (en) | 2017-08-18 | 2019-04-30 | Applied Materials, Inc. | High pressure and high temperature anneal chamber |
| CN117936417A (zh) | 2017-11-11 | 2024-04-26 | 微材料有限责任公司 | 用于高压处理腔室的气体输送系统 |
| PL3711080T3 (pl) * | 2017-11-17 | 2023-12-11 | Aes Global Holdings, Pte. Ltd. | Zsynchronizowane pulsowanie źródła przetwarzania plazmy oraz polaryzacji podłoża |
| US11437221B2 (en) | 2017-11-17 | 2022-09-06 | Advanced Energy Industries, Inc. | Spatial monitoring and control of plasma processing environments |
| CN111788655B (zh) | 2017-11-17 | 2024-04-05 | 先进工程解决方案全球控股私人有限公司 | 对等离子体处理的离子偏置电压的空间和时间控制 |
| KR20200075892A (ko) | 2017-11-17 | 2020-06-26 | 어플라이드 머티어리얼스, 인코포레이티드 | 고압 처리 시스템을 위한 컨덴서 시스템 |
| US12230476B2 (en) | 2017-11-17 | 2025-02-18 | Advanced Energy Industries, Inc. | Integrated control of a plasma processing system |
| KR102877884B1 (ko) | 2017-11-17 | 2025-11-04 | 에이이에스 글로벌 홀딩스 피티이 리미티드 | 플라즈마 프로세싱 시스템에서 변조 공급기들의 개선된 적용 |
| JP7239598B2 (ja) | 2018-03-09 | 2023-03-14 | アプライド マテリアルズ インコーポレイテッド | 金属含有材料の高圧アニーリングプロセス |
| US10950429B2 (en) | 2018-05-08 | 2021-03-16 | Applied Materials, Inc. | Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom |
| US10748783B2 (en) | 2018-07-25 | 2020-08-18 | Applied Materials, Inc. | Gas delivery module |
| WO2020117462A1 (en) | 2018-12-07 | 2020-06-11 | Applied Materials, Inc. | Semiconductor processing system |
| JP7603649B2 (ja) | 2019-07-12 | 2024-12-20 | エーイーエス グローバル ホールディングス， プライベート リミテッド | 単一制御型スイッチを伴うバイアス供給装置 |
| US11901222B2 (en) | 2020-02-17 | 2024-02-13 | Applied Materials, Inc. | Multi-step process for flowable gap-fill film |
| US12125674B2 (en) | 2020-05-11 | 2024-10-22 | Advanced Energy Industries, Inc. | Surface charge and power feedback and control using a switch mode bias system |
| TWI787823B (zh) * | 2021-05-17 | 2022-12-21 | 天虹科技股份有限公司 | 可減少微塵的基板處理腔室及其遮擋機構 |
| JP2023048694A (ja) * | 2021-09-28 | 2023-04-07 | 芝浦メカトロニクス株式会社 | 成膜装置 |
| US11670487B1 (en) | 2022-01-26 | 2023-06-06 | Advanced Energy Industries, Inc. | Bias supply control and data processing |
| US12046448B2 (en) | 2022-01-26 | 2024-07-23 | Advanced Energy Industries, Inc. | Active switch on time control for bias supply |
| US11942309B2 (en) | 2022-01-26 | 2024-03-26 | Advanced Energy Industries, Inc. | Bias supply with resonant switching |
| US11978613B2 (en) | 2022-09-01 | 2024-05-07 | Advanced Energy Industries, Inc. | Transition control in a bias supply |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01309965A (ja) | 1988-06-08 | 1989-12-14 | Matsushita Electric Ind Co Ltd | マグネトロンスパッタ装置 |
| US5482610A (en) * | 1991-11-14 | 1996-01-09 | Leybold Aktiengesellschaft | Cathode for coating a substrate |
| JP2001220671A (ja) | 1999-12-02 | 2001-08-14 | Anelva Corp | スパッタ成膜応用のためのプラズマ処理装置 |
| US6451177B1 (en) | 2000-01-21 | 2002-09-17 | Applied Materials, Inc. | Vault shaped target and magnetron operable in two sputtering modes |
| EP1254970A1 (de) * | 2001-05-03 | 2002-11-06 | Unaxis Balzers Aktiengesellschaft | Magnetronsputterquelle mit mehrteiligem Target |
| JP4614578B2 (ja) | 2001-06-01 | 2011-01-19 | キヤノンアネルバ株式会社 | スパッタ成膜応用のためのプラズマ処理装置 |
| US7504006B2 (en) | 2002-08-01 | 2009-03-17 | Applied Materials, Inc. | Self-ionized and capacitively-coupled plasma for sputtering and resputtering |
| US7179351B1 (en) | 2003-12-15 | 2007-02-20 | Novellus Systems, Inc. | Methods and apparatus for magnetron sputtering |
| US20060172536A1 (en) | 2005-02-03 | 2006-08-03 | Brown Karl M | Apparatus for plasma-enhanced physical vapor deposition of copper with RF source power applied through the workpiece |
| US8557094B2 (en) | 2006-10-05 | 2013-10-15 | Applied Materials, Inc. | Sputtering chamber having auxiliary backside magnet to improve etch uniformity and magnetron producing sustained self sputtering of ruthenium and tantalum |
| WO2009014394A2 (en) * | 2007-07-25 | 2009-01-29 | Nuricell, Inc. | Method for depositing ceramic thin film by sputtering using non-conductive target |
| US8070925B2 (en) | 2008-10-17 | 2011-12-06 | Applied Materials, Inc. | Physical vapor deposition reactor with circularly symmetric RF feed and DC feed to the sputter target |
| US9834840B2 (en) * | 2010-05-14 | 2017-12-05 | Applied Materials, Inc. | Process kit shield for improved particle reduction |
| TWI554630B (zh) * | 2010-07-02 | 2016-10-21 | 應用材料股份有限公司 | 減少沉積不對稱性的沉積設備及方法 |
-
2011
- 2011-03-15 US US13/048,440 patent/US8795488B2/en active Active
- 2011-03-17 TW TW100109194A patent/TWI521081B/zh active
- 2011-03-28 JP JP2013502704A patent/JP5722428B2/ja active Active
- 2011-03-28 WO PCT/US2011/030226 patent/WO2011123399A2/en not_active Ceased
- 2011-03-28 KR KR1020127027934A patent/KR101801760B1/ko active Active
- 2011-03-28 CN CN201180020863.XA patent/CN102859029B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US8795488B2 (en) | 2014-08-05 |
| JP2013524012A (ja) | 2013-06-17 |
| WO2011123399A3 (en) | 2012-01-26 |
| KR101801760B1 (ko) | 2017-11-27 |
| US20110240464A1 (en) | 2011-10-06 |
| WO2011123399A2 (en) | 2011-10-06 |
| CN102859029B (zh) | 2014-08-06 |
| KR20130008596A (ko) | 2013-01-22 |
| JP5722428B2 (ja) | 2015-05-20 |
| CN102859029A (zh) | 2013-01-02 |
| TW201142068A (en) | 2011-12-01 |
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