JP5710529B2 - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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Publication number
JP5710529B2
JP5710529B2 JP2012060873A JP2012060873A JP5710529B2 JP 5710529 B2 JP5710529 B2 JP 5710529B2 JP 2012060873 A JP2012060873 A JP 2012060873A JP 2012060873 A JP2012060873 A JP 2012060873A JP 5710529 B2 JP5710529 B2 JP 5710529B2
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Japan
Prior art keywords
film
gas
tungsten
silicon
layer
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Expired - Fee Related
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JP2012060873A
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English (en)
Japanese (ja)
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JP2013080891A5 (https=
JP2013080891A (ja
Inventor
月 啓 若
月 啓 若
島 一 郎 水
島 一 郎 水
田 敦 子 坂
田 敦 子 坂
村 政 幸 北
村 政 幸 北
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Toshiba Corp
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Toshiba Corp
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C23C16/14—Deposition of only one other metal element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H10P14/432—Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H10W20/034—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics bottomless barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/041—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being discontinuous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers
    • H10W20/045—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers for deposition from the gaseous phase, e.g. for chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
JP2012060873A 2011-09-22 2012-03-16 半導体装置及びその製造方法 Expired - Fee Related JP5710529B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012060873A JP5710529B2 (ja) 2011-09-22 2012-03-16 半導体装置及びその製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011207829 2011-09-22
JP2011207829 2011-09-22
JP2012060873A JP5710529B2 (ja) 2011-09-22 2012-03-16 半導体装置及びその製造方法

Publications (3)

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JP2013080891A JP2013080891A (ja) 2013-05-02
JP2013080891A5 JP2013080891A5 (https=) 2014-03-20
JP5710529B2 true JP5710529B2 (ja) 2015-04-30

Family

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JP2012060873A Expired - Fee Related JP5710529B2 (ja) 2011-09-22 2012-03-16 半導体装置及びその製造方法

Country Status (2)

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US (1) US8742592B2 (https=)
JP (1) JP5710529B2 (https=)

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US12444651B2 (en) 2009-08-04 2025-10-14 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
JP2014192485A (ja) * 2013-03-28 2014-10-06 Hitachi Kokusai Electric Inc 半導体装置の製造方法、基板処理方法及び基板処理装置
JP6311547B2 (ja) * 2013-11-05 2018-04-18 東京エレクトロン株式会社 マスク構造体の形成方法、成膜装置及び記憶媒体
TWI672737B (zh) * 2013-12-27 2019-09-21 Lam Research Corporation 允許低電阻率鎢特徵物填充之鎢成核程序
US9627498B2 (en) * 2015-05-20 2017-04-18 Macronix International Co., Ltd. Contact structure for thin film semiconductor
JP6417051B2 (ja) * 2015-09-29 2018-10-31 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
US9449921B1 (en) * 2015-12-15 2016-09-20 International Business Machines Corporation Voidless contact metal structures
US10468264B2 (en) * 2016-07-04 2019-11-05 Samsung Electronics Co., Ltd. Method of fabricating semiconductor device
JP6937604B2 (ja) * 2017-04-26 2021-09-22 東京エレクトロン株式会社 タングステン膜を形成する方法
KR20250073535A (ko) 2017-08-14 2025-05-27 램 리써치 코포레이션 3차원 수직 nand 워드라인을 위한 금속 충진 프로세스
JP7009615B2 (ja) * 2018-03-26 2022-01-25 株式会社Kokusai Electric 半導体装置の製造方法、基板処理方法、基板処理装置、およびプログラム
KR102806630B1 (ko) 2018-05-03 2025-05-12 램 리써치 코포레이션 3d nand 구조체들에 텅스텐 및 다른 금속들을 증착하는 방법
US10930493B2 (en) * 2018-10-29 2021-02-23 Applied Materials, Inc. Linerless continuous amorphous metal films
WO2020123987A1 (en) 2018-12-14 2020-06-18 Lam Research Corporation Atomic layer deposition on 3d nand structures
WO2020210260A1 (en) 2019-04-11 2020-10-15 Lam Research Corporation High step coverage tungsten deposition
US12237221B2 (en) 2019-05-22 2025-02-25 Lam Research Corporation Nucleation-free tungsten deposition
WO2021030836A1 (en) 2019-08-12 2021-02-18 Lam Research Corporation Tungsten deposition
US11469139B2 (en) * 2019-09-20 2022-10-11 Taiwan Semiconductor Manufacturing Company, Ltd. Bottom-up formation of contact plugs
US11257755B2 (en) 2020-06-15 2022-02-22 Taiwan Semiconductor Manufacturing Co., Ltd. Metal loss prevention in conductive structures
JP7449790B2 (ja) * 2020-06-24 2024-03-14 株式会社アルバック 金属配線の形成方法及び金属配線の構造体
KR102942498B1 (ko) * 2020-12-17 2026-03-23 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 방법, 프로그램, 기판 처리 장치 및 반도체 장치의 제조 방법
JP7647185B2 (ja) * 2021-03-09 2025-03-18 東京エレクトロン株式会社 タングステン膜を成膜する方法、及びシステム
WO2022211007A1 (ja) * 2021-04-02 2022-10-06 日本製鉄株式会社 無方向性電磁鋼板
JP7827389B2 (ja) * 2021-11-02 2026-03-10 東京エレクトロン株式会社 成膜方法及び成膜装置
JP2024106554A (ja) * 2023-01-27 2024-08-08 東京エレクトロン株式会社 成膜方法及び成膜装置
JP2024106552A (ja) * 2023-01-27 2024-08-08 東京エレクトロン株式会社 成膜方法及び成膜装置
JP2024106553A (ja) * 2023-01-27 2024-08-08 東京エレクトロン株式会社 成膜方法及び成膜装置

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Publication number Publication date
US8742592B2 (en) 2014-06-03
US20130075912A1 (en) 2013-03-28
JP2013080891A (ja) 2013-05-02

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