JP5707682B2 - エピタキシャルシリコンウェーハの製造方法 - Google Patents
エピタキシャルシリコンウェーハの製造方法 Download PDFInfo
- Publication number
- JP5707682B2 JP5707682B2 JP2009192450A JP2009192450A JP5707682B2 JP 5707682 B2 JP5707682 B2 JP 5707682B2 JP 2009192450 A JP2009192450 A JP 2009192450A JP 2009192450 A JP2009192450 A JP 2009192450A JP 5707682 B2 JP5707682 B2 JP 5707682B2
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- JP
- Japan
- Prior art keywords
- polishing
- silicon wafer
- abrasive grains
- aqueous solution
- epitaxial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 168
- 229910052710 silicon Inorganic materials 0.000 title claims description 168
- 239000010703 silicon Substances 0.000 title claims description 168
- 238000004519 manufacturing process Methods 0.000 title claims description 27
- 238000005498 polishing Methods 0.000 claims description 277
- 239000006061 abrasive grain Substances 0.000 claims description 90
- 239000007788 liquid Substances 0.000 claims description 56
- 239000007864 aqueous solution Substances 0.000 claims description 48
- 238000005259 measurement Methods 0.000 claims description 34
- 230000003746 surface roughness Effects 0.000 claims description 31
- 229920003169 water-soluble polymer Polymers 0.000 claims description 20
- 239000012808 vapor phase Substances 0.000 claims description 14
- 150000001412 amines Chemical class 0.000 claims description 11
- 238000011156 evaluation Methods 0.000 claims description 11
- 229920000663 Hydroxyethyl cellulose Polymers 0.000 claims description 8
- 239000004354 Hydroxyethyl cellulose Substances 0.000 claims description 8
- 235000019447 hydroxyethyl cellulose Nutrition 0.000 claims description 8
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 5
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims description 3
- 239000003002 pH adjusting agent Substances 0.000 claims description 3
- 239000002202 Polyethylene glycol Substances 0.000 claims description 2
- 229910021529 ammonia Inorganic materials 0.000 claims description 2
- 229920001223 polyethylene glycol Polymers 0.000 claims description 2
- XAEFZNCEHLXOMS-UHFFFAOYSA-M potassium benzoate Chemical compound [K+].[O-]C(=O)C1=CC=CC=C1 XAEFZNCEHLXOMS-UHFFFAOYSA-M 0.000 claims description 2
- 150000003839 salts Chemical class 0.000 claims description 2
- 159000000000 sodium salts Chemical class 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 209
- 238000000034 method Methods 0.000 description 45
- 238000004140 cleaning Methods 0.000 description 27
- 238000012545 processing Methods 0.000 description 25
- 239000000243 solution Substances 0.000 description 19
- 230000002093 peripheral effect Effects 0.000 description 14
- 230000008569 process Effects 0.000 description 14
- 239000002245 particle Substances 0.000 description 13
- 238000007796 conventional method Methods 0.000 description 12
- 238000005530 etching Methods 0.000 description 11
- 239000007789 gas Substances 0.000 description 11
- 238000007517 polishing process Methods 0.000 description 11
- 230000009471 action Effects 0.000 description 10
- 239000002738 chelating agent Substances 0.000 description 10
- 239000013078 crystal Substances 0.000 description 10
- 239000000126 substance Substances 0.000 description 9
- 230000007547 defect Effects 0.000 description 8
- 230000001965 increasing effect Effects 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 7
- 239000004744 fabric Substances 0.000 description 7
- 238000000227 grinding Methods 0.000 description 6
- 229910021645 metal ion Inorganic materials 0.000 description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 6
- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 description 5
- 239000008119 colloidal silica Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229960003330 pentetic acid Drugs 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- KXDHJXZQYSOELW-UHFFFAOYSA-N Carbamic acid Chemical compound NC(O)=O KXDHJXZQYSOELW-UHFFFAOYSA-N 0.000 description 3
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000002776 aggregation Effects 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 229960001484 edetic acid Drugs 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920002635 polyurethane Polymers 0.000 description 3
- 239000004814 polyurethane Substances 0.000 description 3
- 238000006748 scratching Methods 0.000 description 3
- 230000002393 scratching effect Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 239000013522 chelant Substances 0.000 description 2
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005489 elastic deformation Effects 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000007665 sagging Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonium chloride Substances [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000011088 calibration curve Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 238000001657 homoepitaxy Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004670 tapping atomic force microscopy Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Weting (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009192450A JP5707682B2 (ja) | 2009-08-21 | 2009-08-21 | エピタキシャルシリコンウェーハの製造方法 |
| TW099127773A TWI498954B (zh) | 2009-08-21 | 2010-08-19 | 磊晶矽晶圓的製造方法 |
| US13/390,764 US8728942B2 (en) | 2009-08-21 | 2010-08-20 | Method for producing epitaxial silicon wafer |
| DE112010003353.6T DE112010003353B4 (de) | 2009-08-21 | 2010-08-20 | Verfahren zur Herstellung von epitaktischen Siliziumwafern |
| KR1020127000974A KR101286171B1 (ko) | 2009-08-21 | 2010-08-20 | 에피택셜 실리콘 웨이퍼의 제조 방법 |
| PCT/JP2010/064076 WO2011021691A1 (ja) | 2009-08-21 | 2010-08-20 | エピタキシャルシリコンウェーハの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009192450A JP5707682B2 (ja) | 2009-08-21 | 2009-08-21 | エピタキシャルシリコンウェーハの製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011042536A JP2011042536A (ja) | 2011-03-03 |
| JP2011042536A5 JP2011042536A5 (enrdf_load_stackoverflow) | 2012-03-29 |
| JP5707682B2 true JP5707682B2 (ja) | 2015-04-30 |
Family
ID=43830263
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009192450A Active JP5707682B2 (ja) | 2009-08-21 | 2009-08-21 | エピタキシャルシリコンウェーハの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5707682B2 (enrdf_load_stackoverflow) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106463403B (zh) | 2014-06-02 | 2020-05-05 | 胜高股份有限公司 | 硅晶片及其制造方法 |
| JP6206360B2 (ja) * | 2014-08-29 | 2017-10-04 | 株式会社Sumco | シリコンウェーハの研磨方法 |
| JP6418174B2 (ja) * | 2016-02-03 | 2018-11-07 | 株式会社Sumco | シリコンウェーハの片面研磨方法 |
| US10584412B2 (en) * | 2016-03-08 | 2020-03-10 | Ii-Vi Delaware, Inc. | Substrate comprising a layer of silicon and a layer of diamond having an optically finished (or a dense) silicon-diamond interface |
| JP6635088B2 (ja) * | 2017-04-24 | 2020-01-22 | 信越半導体株式会社 | シリコンウエーハの研磨方法 |
| DE112017007968T5 (de) | 2017-08-31 | 2020-06-10 | Sumco Corporation | Doppelseitiges polierverfahren für einen siliziumwafer |
| CN112652526A (zh) * | 2020-12-14 | 2021-04-13 | 西安奕斯伟硅片技术有限公司 | 一种硅片抛光方法和硅片 |
| CN113967872A (zh) * | 2021-09-16 | 2022-01-25 | 北京航空航天大学 | 一种用于单晶硅晶圆的激光辅助抛光方法 |
| CN116110776B (zh) * | 2023-03-09 | 2024-07-23 | 通威太阳能（安徽）有限公司 | 微晶片的返工处理方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09306881A (ja) * | 1996-05-15 | 1997-11-28 | Kobe Steel Ltd | シリコン用研磨液組成物および研磨方法 |
| JP3578263B2 (ja) * | 1999-06-22 | 2004-10-20 | 三菱住友シリコン株式会社 | シリコンウェーハの研磨方法及びこの方法により研磨されたシリコンウェーハ |
| DE19938340C1 (de) * | 1999-08-13 | 2001-02-15 | Wacker Siltronic Halbleitermat | Verfahren zur Herstellung einer epitaxierten Halbleiterscheibe |
-
2009
- 2009-08-21 JP JP2009192450A patent/JP5707682B2/ja active Active
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| Publication number | Publication date |
|---|---|
| JP2011042536A (ja) | 2011-03-03 |
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