JP5706794B2 - マイクロスプリング接点を有するインターポーザ、ならびにインターポーザを製作する方法および使用する方法 - Google Patents
マイクロスプリング接点を有するインターポーザ、ならびにインターポーザを製作する方法および使用する方法 Download PDFInfo
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- JP5706794B2 JP5706794B2 JP2011207742A JP2011207742A JP5706794B2 JP 5706794 B2 JP5706794 B2 JP 5706794B2 JP 2011207742 A JP2011207742 A JP 2011207742A JP 2011207742 A JP2011207742 A JP 2011207742A JP 5706794 B2 JP5706794 B2 JP 5706794B2
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- microspring
- interposer
- substrate
- tip
- laminated structure
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01024—Chromium [Cr]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2924/01—Chemical elements
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- H—ELECTRICITY
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- H01L2924/01—Chemical elements
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- H—ELECTRICITY
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- H01L2924/01—Chemical elements
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- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01093—Neptunium [Np]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10227—Other objects, e.g. metallic pieces
- H05K2201/10378—Interposers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
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- H05K3/28—Applying non-metallic protective coatings
- H05K3/281—Applying non-metallic protective coatings by means of a preformed insulating foil
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/4007—Surface contacts, e.g. bumps
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49147—Assembling terminal to base
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Micromachines (AREA)
- Measuring Leads Or Probes (AREA)
- Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
Applications Claiming Priority (2)
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| US12/887,814 US8441808B2 (en) | 2010-09-22 | 2010-09-22 | Interposer with microspring contacts |
| US12/887,814 | 2010-09-22 |
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| JP2012069952A JP2012069952A (ja) | 2012-04-05 |
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| JP5077324B2 (ja) * | 2009-10-26 | 2012-11-21 | 株式会社デンソー | 配線基板 |
| US8441808B2 (en) * | 2010-09-22 | 2013-05-14 | Palo Alto Research Center Incorporated | Interposer with microspring contacts |
| WO2013165352A1 (en) * | 2012-04-30 | 2013-11-07 | Hewlett-Packard Development Company, L.P. | Socket with routed contacts |
| US8686552B1 (en) | 2013-03-14 | 2014-04-01 | Palo Alto Research Center Incorporated | Multilevel IC package using interconnect springs |
| US9386693B2 (en) * | 2014-05-05 | 2016-07-05 | Lockheed Martin Corporation | Board integrated interconnect |
| US20160229689A1 (en) * | 2015-02-11 | 2016-08-11 | Analog Devices, Inc. | Packaged Microchip with Patterned Interposer |
| CN108025906A (zh) * | 2015-09-30 | 2018-05-11 | Tdk株式会社 | 带有阻尼的弹性安装传感器系统 |
| US11289443B2 (en) | 2017-04-20 | 2022-03-29 | Palo Alto Research Center Incorporated | Microspring structure for hardware trusted platform module |
| US11171103B2 (en) | 2020-01-06 | 2021-11-09 | International Business Machines Corporation | Solder ball dimension management |
| US11054593B1 (en) | 2020-03-11 | 2021-07-06 | Palo Alto Research Center Incorporated | Chip-scale optoelectronic transceiver with microspringed interposer |
| US11527420B2 (en) * | 2021-03-22 | 2022-12-13 | Palo Alto Research Center Incorporated | Micro-fabricated, stress-engineered members formed on passivation layer of integrated circuit |
| US11908782B2 (en) | 2021-03-22 | 2024-02-20 | Xerox Corporation | Spacers formed on a substrate with etched micro-springs |
Family Cites Families (54)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6741085B1 (en) * | 1993-11-16 | 2004-05-25 | Formfactor, Inc. | Contact carriers (tiles) for populating larger substrates with spring contacts |
| US5783870A (en) | 1995-03-16 | 1998-07-21 | National Semiconductor Corporation | Method for connecting packages of a stacked ball grid array structure |
| US5613861A (en) | 1995-06-07 | 1997-03-25 | Xerox Corporation | Photolithographically patterned spring contact |
| US5944537A (en) | 1997-12-15 | 1999-08-31 | Xerox Corporation | Photolithographically patterned spring contact and apparatus and methods for electrically contacting devices |
| US5979892A (en) | 1998-05-15 | 1999-11-09 | Xerox Corporation | Controlled cilia for object manipulation |
| US6672875B1 (en) | 1998-12-02 | 2004-01-06 | Formfactor, Inc. | Spring interconnect structures |
| KR20020028159A (ko) * | 1999-05-27 | 2002-04-16 | 나노넥서스, 인코포레이티드 | 전자 회로용 대량 병렬 인터페이스 |
| AU6509500A (en) * | 1999-07-28 | 2001-02-19 | Nanonexus, Inc. | Construction structures and manufacturing processes for integrated circuit waferprobe card assemblies |
| US6352454B1 (en) | 1999-10-20 | 2002-03-05 | Xerox Corporation | Wear-resistant spring contacts |
| US6267605B1 (en) | 1999-11-15 | 2001-07-31 | Xerox Corporation | Self positioning, passive MEMS mirror structures |
| US6213789B1 (en) | 1999-12-15 | 2001-04-10 | Xerox Corporation | Method and apparatus for interconnecting devices using an adhesive |
| US6794725B2 (en) | 1999-12-21 | 2004-09-21 | Xerox Corporation | Amorphous silicon sensor with micro-spring interconnects for achieving high uniformity in integrated light-emitting sources |
| US6827584B2 (en) | 1999-12-28 | 2004-12-07 | Formfactor, Inc. | Interconnect for microelectronic structures with enhanced spring characteristics |
| WO2001080315A2 (en) * | 2000-04-12 | 2001-10-25 | Formfactor, Inc. | Shaped springs and methods of fabricating and using shaped springs |
| US6392524B1 (en) | 2000-06-09 | 2002-05-21 | Xerox Corporation | Photolithographically-patterned out-of-plane coil structures and method of making |
| US6396677B1 (en) | 2000-05-17 | 2002-05-28 | Xerox Corporation | Photolithographically-patterned variable capacitor structures and method of making |
| US6856225B1 (en) | 2000-05-17 | 2005-02-15 | Xerox Corporation | Photolithographically-patterned out-of-plane coil structures and method of making |
| EP1292834B1 (en) | 2000-06-20 | 2005-11-30 | Nanonexus, Inc. | Systems for testing integrated circuits |
| US6290510B1 (en) | 2000-07-27 | 2001-09-18 | Xerox Corporation | Spring structure with self-aligned release material |
| US6521970B1 (en) * | 2000-09-01 | 2003-02-18 | National Semiconductor Corporation | Chip scale package with compliant leads |
| US6632373B1 (en) | 2000-09-28 | 2003-10-14 | Xerox Corporation | Method for an optical switch on a substrate |
| US6504643B1 (en) | 2000-09-28 | 2003-01-07 | Xerox Corporation | Structure for an optical switch on a substrate |
| US6743982B2 (en) | 2000-11-29 | 2004-06-01 | Xerox Corporation | Stretchable interconnects using stress gradient films |
| US6595787B2 (en) | 2001-02-09 | 2003-07-22 | Xerox Corporation | Low cost integrated out-of-plane micro-device structures and method of making |
| US6655964B2 (en) | 2001-02-09 | 2003-12-02 | Xerox Corporation | Low cost integrated out-of-plane micro-device structures and method of making |
| US6534249B2 (en) | 2001-02-09 | 2003-03-18 | Xerox Corporation | Method of making low cost integrated out-of-plane micro-device structures |
| JP3724432B2 (ja) | 2001-04-19 | 2005-12-07 | 株式会社ニコン | 薄膜弾性構造体及びその製造方法並びにこれを用いたミラーデバイス及び光スイッチ |
| US6528350B2 (en) * | 2001-05-21 | 2003-03-04 | Xerox Corporation | Method for fabricating a metal plated spring structure |
| US6560861B2 (en) | 2001-07-11 | 2003-05-13 | Xerox Corporation | Microspring with conductive coating deposited on tip after release |
| DE10149688B4 (de) | 2001-10-09 | 2004-09-09 | Infineon Technologies Ag | Verfahren zum Herstellen einer Mikrokontaktfeder auf einem Substrat |
| US6794737B2 (en) * | 2001-10-12 | 2004-09-21 | Xerox Corporation | Spring structure with stress-balancing layer |
| US6777963B2 (en) | 2001-11-08 | 2004-08-17 | Koninklijke Philips Electronics N.V. | Chip-mounted contact springs |
| US6684499B2 (en) | 2002-01-07 | 2004-02-03 | Xerox Corporation | Method for fabricating a spring structure |
| CN1643741A (zh) | 2002-03-18 | 2005-07-20 | 纳米纳克斯公司 | 一种微型接触弹簧 |
| US6668628B2 (en) | 2002-03-29 | 2003-12-30 | Xerox Corporation | Scanning probe system with spring probe |
| US7011530B2 (en) | 2002-05-24 | 2006-03-14 | Sitaraman Suresh K | Multi-axis compliance spring |
| US6621141B1 (en) | 2002-07-22 | 2003-09-16 | Palo Alto Research Center Incorporated | Out-of-plane microcoil with ground-plane structure |
| JP2004259530A (ja) | 2003-02-25 | 2004-09-16 | Shinko Electric Ind Co Ltd | 外部接触端子を有する半導体装置及びその使用方法 |
| KR20060058085A (ko) | 2003-07-08 | 2006-05-29 | 큐나노 에이비 | 나노위스커를 통합하는 프로브 구조체, 그 제조 방법, 및나노위스커를 형성하는 방법 |
| US7015584B2 (en) | 2003-07-08 | 2006-03-21 | Xerox Corporation | High force metal plated spring structure |
| US6998703B2 (en) | 2003-12-04 | 2006-02-14 | Palo Alto Research Center Inc. | Thin package for stacking integrated circuits |
| US7400041B2 (en) * | 2004-04-26 | 2008-07-15 | Sriram Muthukumar | Compliant multi-composition interconnects |
| US7649145B2 (en) | 2004-06-18 | 2010-01-19 | Micron Technology, Inc. | Compliant spring contact structures |
| US20060030179A1 (en) * | 2004-08-05 | 2006-02-09 | Palo Alto Research Center, Incorporated | Transmission-line spring structure |
| US7456092B2 (en) | 2004-10-07 | 2008-11-25 | Palo Alto Research Center Incorporated | Self-releasing spring structures and methods |
| US7230440B2 (en) | 2004-10-21 | 2007-06-12 | Palo Alto Research Center Incorporated | Curved spring structure with elongated section located under cantilevered section |
| US7166326B1 (en) | 2004-12-14 | 2007-01-23 | Palo Alto Research Center (Parc) | Method of electroplating stressed metal springs |
| US7550855B2 (en) * | 2005-12-02 | 2009-06-23 | Palo Alto Research Center Incorporated | Vertically spaced plural microsprings |
| US7344906B2 (en) | 2005-12-15 | 2008-03-18 | Palo Alto Research Center Incorporated | Structure and method for releasing stressy metal films |
| US7426117B2 (en) | 2005-12-21 | 2008-09-16 | Xerox Corporation | Chip on a board |
| US7982290B2 (en) | 2006-01-12 | 2011-07-19 | Palo Alto Research Center, Inc. | Contact spring application to semiconductor devices |
| US7927905B2 (en) * | 2007-12-21 | 2011-04-19 | Palo Alto Research Center Incorporated | Method of producing microsprings having nanowire tip structures |
| US8441808B2 (en) * | 2010-09-22 | 2013-05-14 | Palo Alto Research Center Incorporated | Interposer with microspring contacts |
| US8519534B2 (en) * | 2010-09-22 | 2013-08-27 | Palo Alto Research Center Incorporated | Microsprings partially embedded in a laminate structure and methods for producing same |
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| US9967982B2 (en) | 2018-05-08 |
| KR101750713B1 (ko) | 2017-06-27 |
| US20120067637A1 (en) | 2012-03-22 |
| US20160128206A9 (en) | 2016-05-05 |
| JP2012069952A (ja) | 2012-04-05 |
| US8441808B2 (en) | 2013-05-14 |
| US20130232782A1 (en) | 2013-09-12 |
| TW201222745A (en) | 2012-06-01 |
| KR20120031140A (ko) | 2012-03-30 |
| TWI556377B (zh) | 2016-11-01 |
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