JP5706537B2 - 圧電又は強誘電応力誘起ライナを有する相変化材料セル - Google Patents
圧電又は強誘電応力誘起ライナを有する相変化材料セル Download PDFInfo
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- 239000012782 phase change material Substances 0.000 title claims description 122
- 239000000463 material Substances 0.000 claims description 84
- 239000011148 porous material Substances 0.000 claims description 46
- 238000000034 method Methods 0.000 claims description 24
- 230000008859 change Effects 0.000 claims description 19
- 239000012212 insulator Substances 0.000 claims description 17
- 230000010287 polarization Effects 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 15
- 230000005684 electric field Effects 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 238000002425 crystallisation Methods 0.000 claims description 8
- 230000008025 crystallization Effects 0.000 claims description 8
- 230000002269 spontaneous effect Effects 0.000 claims description 2
- 239000012071 phase Substances 0.000 description 35
- 239000004020 conductor Substances 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 239000010931 gold Substances 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 7
- 229910052721 tungsten Inorganic materials 0.000 description 7
- 239000010937 tungsten Substances 0.000 description 7
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 6
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 108010067216 glycyl-glycyl-glycine Proteins 0.000 description 6
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 229910052707 ruthenium Inorganic materials 0.000 description 6
- 239000011669 selenium Substances 0.000 description 6
- HWEYZGSCHQNNEH-UHFFFAOYSA-N silicon tantalum Chemical compound [Si].[Ta] HWEYZGSCHQNNEH-UHFFFAOYSA-N 0.000 description 6
- GZXOHHPYODFEGO-UHFFFAOYSA-N triglycine sulfate Chemical compound NCC(O)=O.NCC(O)=O.NCC(O)=O.OS(O)(=O)=O GZXOHHPYODFEGO-UHFFFAOYSA-N 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 5
- 229910018321 SbTe Inorganic materials 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 230000001965 increasing effect Effects 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 3
- -1 BaTiO 3 (BTO) Inorganic materials 0.000 description 3
- 229910009580 YMnO Inorganic materials 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 238000004590 computer program Methods 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910052798 chalcogen Inorganic materials 0.000 description 2
- 239000005387 chalcogenide glass Substances 0.000 description 2
- 150000001787 chalcogens Chemical class 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229910005872 GeSb Inorganic materials 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005621 ferroelectricity Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
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- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
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- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
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- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
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- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8825—Selenides, e.g. GeSe
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
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- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
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- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
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- G11C2013/0095—Write using strain induced by, e.g. piezoelectric, thermal effects
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Description
104、604:絶縁体層
106、152、606:下部電極
108、158、610:ポア
110、166:トランスデューサ層
112、162:相変化材料
114、164:上部電極
116、160:コントローラ
154:絶縁性誘電材料
155:導電体層
156:導電性ライン
157:別の絶縁材料層
602、702:中間製造構造体
608:中間電極
612:導電性パッド
704:圧電材料
1155:露出部分
Claims (10)
- 少なくともアモルファス状態と結晶状態との間で切換可能な相変化材料と、
前記相変化材料に近接して配置された圧電トランスデューサであって、前記相変化材料が前記アモルファス状態にあるときに活性化するように構成された、圧電トランスデューサと、
前記相変化材料をアモルファス相から結晶相に変化させる前に、前記圧電トランスデューサを分極させる第1の電気パルスを印加して、前記圧電トランスデューサが前記相変化材料に引張応力を与えるように構成された、コントローラと、
を備え、
前記圧電トランスデューサは強誘電材料を含み、
前記圧電トランスデューサは、前記相変化材料が前記結晶状態から前記アモルファス状態に変化させられた後に、前記相変化材料の少なくとも一部に圧縮応力を与えるように構成される、
メモリ・セル。 - 前記相変化材料及び前記圧電トランスデューサは、前記相変化材料の閾値電圧に対応する電場が前記強誘電材料の保磁場より大きくなるように製造され、
前記閾値電圧は、前記相変化材料を前記アモルファス状態から前記結晶状態に変化させるように前記相変化材料を横切る第1の電圧である、
請求項1に記載のメモリ・セル。 - 前記相変化材料をアモルファス相から結晶相に変化させる前に、前記強誘電材料を分極させる第1の電気パルスを印加して、前記圧電トランスデューサが前記相変化材料に引張応力を与えるように構成されたコントローラをさらに備え、前記第1の電気パルスは前記閾値電圧を下回る電圧を有する、請求項2に記載のメモリ・セル。
- 前記コントローラは、前記相変化材料を結晶相からアモルファス相に変化させた後で、第2の電気パルスを印加して前記強誘電材料を分極させ、前記圧電トランスデューサが前記相変化材料に圧縮応力を与えるように構成されており、前記第2の電気パルスは前記第1の電気パルスとは反対の極性の電圧を有する、請求項3に記載のメモリ・セル。
- 前記相変化材料及び前記強誘電材料は、前記相変化材料の結晶化温度が前記強誘電材料のキュリー温度より低くなるように製造され、
前記結晶化温度は、それを超えると前記アモルファス状態にある前記相変化材料が結晶化して前記結晶状態になる第1の温度であり、
前記キュリー温度は、それを超えると前記強誘電材料が自発分極を示さなくなる第2の温度である、
請求項1に記載のメモリ・セル。 - 第1の電極と、
少なくとも第2の電極と、
をさらに備え、
前記相変化材料及び前記圧電トランスデューサは、少なくとも部分的に前記第1の電極と前記第2の電極との間に配置される、
請求項1に記載のメモリ・セル。 - ポアを画定する絶縁体層と、
前記ポアの下方に配置された下部電極と、
前記ポアの上方に配置された上部電極と、
をさらに備え、
前記相変化材料は、前記ポアの内部において前記下部電極と前記上部電極の間に配置され、
前記圧電トランスデューサは、前記相変化材料と前記絶縁体層との間に配置される、
請求項1に記載のメモリ・セル。 - 前記圧電トランスデューサは、前記相変化材料が前記アモルファス状態から前記結晶状態に変化させられる前に、前記相変化材料の少なくとも一部に引張応力を与えるように構成される、請求項1に記載のメモリ・セル。
- 相変化メモリ・セルを製造するための方法であって、
絶縁体層にポアを作成することと、
前記ポアの中に圧電材料を堆積させることと、
前記圧電材料と近接させて前記ポアの中に相変化材料を堆積させることと、
を含み、
前記ポアの下方に下部電極を形成することと、
前記相変化材料の上に上部電極を形成することと、
をさらに含み、
前記圧電材料の少なくとも一部を活性化できるように、前記ポアを画定する少なくとも1つの壁に少なくとも1つの付加的な電極を適合させることをさらに含む、
方法。 - 前記ポアの中に前記圧電材料を堆積させることは、前記圧電材料が前記相変化材料と前記少なくとも1つの壁との間に堆積するように、前記ポアを画定する少なくとも1つの壁に前記圧電材料を適合させることを含む、請求項9に記載の方法。
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US12/964,980 | 2010-12-10 | ||
US12/964,980 US8559217B2 (en) | 2010-12-10 | 2010-12-10 | Phase change material cell with stress inducer liner |
PCT/US2011/062970 WO2012078456A1 (en) | 2010-12-10 | 2011-12-01 | Phase change material cell with piezoelectric or ferroelectric stress inducer liner |
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GB2515101A (en) * | 2013-06-14 | 2014-12-17 | Ibm | Phase-change memory cells |
WO2015161257A1 (en) * | 2014-04-18 | 2015-10-22 | Northeastern Univeristy | Piezoelectric mems resonator with integrated phase change material switches |
KR20160094154A (ko) * | 2015-01-30 | 2016-08-09 | 에스케이하이닉스 주식회사 | 데이터 전송 회로 |
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US20100078621A1 (en) * | 2008-10-01 | 2010-04-01 | Breitwisch Mathew J | Method to reduce reset current of pcm using stress liner layers |
US8031518B2 (en) * | 2009-06-08 | 2011-10-04 | Micron Technology, Inc. | Methods, structures, and devices for reducing operational energy in phase change memory |
JP2011103323A (ja) * | 2009-11-10 | 2011-05-26 | Hitachi Ltd | 半導体記憶装置 |
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US8559217B2 (en) | 2013-10-15 |
WO2012078456A1 (en) | 2012-06-14 |
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US20130309782A1 (en) | 2013-11-21 |
US9159920B2 (en) | 2015-10-13 |
US20120147666A1 (en) | 2012-06-14 |
CN103403804B (zh) | 2016-08-10 |
CN103403804A (zh) | 2013-11-20 |
DE112011104319T5 (de) | 2013-09-26 |
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