JP5701296B2 - エピタキシャル積層体を備えたブロードエリアレーザ及びブロードエリアレーザの製造方法 - Google Patents

エピタキシャル積層体を備えたブロードエリアレーザ及びブロードエリアレーザの製造方法 Download PDF

Info

Publication number
JP5701296B2
JP5701296B2 JP2012521960A JP2012521960A JP5701296B2 JP 5701296 B2 JP5701296 B2 JP 5701296B2 JP 2012521960 A JP2012521960 A JP 2012521960A JP 2012521960 A JP2012521960 A JP 2012521960A JP 5701296 B2 JP5701296 B2 JP 5701296B2
Authority
JP
Japan
Prior art keywords
broad area
area laser
ridge
laminate
ridges
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2012521960A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013501347A (ja
JP2013501347A5 (https=
Inventor
レル アルフレート
レル アルフレート
ラメルスベアガー シュテファニー
ラメルスベアガー シュテファニー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of JP2013501347A publication Critical patent/JP2013501347A/ja
Publication of JP2013501347A5 publication Critical patent/JP2013501347A5/ja
Application granted granted Critical
Publication of JP5701296B2 publication Critical patent/JP5701296B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2036—Broad area lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques
    • H01S5/2086—Methods of obtaining the confinement using special etching techniques lateral etch control, e.g. mask induced
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2214—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on oxides or nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4081—Near-or far field control

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
  • Laser Beam Processing (AREA)
JP2012521960A 2009-07-31 2010-06-28 エピタキシャル積層体を備えたブロードエリアレーザ及びブロードエリアレーザの製造方法 Active JP5701296B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009035639.8 2009-07-31
DE102009035639.8A DE102009035639B4 (de) 2009-07-31 2009-07-31 Breitstreifenlaser mit einem epitaktischen Schichtenstapel und Verfahren zu dessen Herstellung
PCT/DE2010/000751 WO2011012100A1 (de) 2009-07-31 2010-06-28 Breitstreifenlaser mit einem epitaktischen schichtenstapel und verfahren zu dessen herstellung

Publications (3)

Publication Number Publication Date
JP2013501347A JP2013501347A (ja) 2013-01-10
JP2013501347A5 JP2013501347A5 (https=) 2014-07-24
JP5701296B2 true JP5701296B2 (ja) 2015-04-15

Family

ID=42734568

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012521960A Active JP5701296B2 (ja) 2009-07-31 2010-06-28 エピタキシャル積層体を備えたブロードエリアレーザ及びブロードエリアレーザの製造方法

Country Status (8)

Country Link
US (1) US8619833B2 (https=)
EP (1) EP2460241B1 (https=)
JP (1) JP5701296B2 (https=)
KR (2) KR101824613B1 (https=)
CN (1) CN102474078B (https=)
DE (1) DE102009035639B4 (https=)
TW (1) TWI416829B (https=)
WO (1) WO2011012100A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010020625B4 (de) 2010-05-14 2024-02-22 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines kantenemittierenden Halbleiterlasers
US10179918B2 (en) 2015-05-07 2019-01-15 Sangamo Therapeutics, Inc. Methods and compositions for increasing transgene activity
US9800020B2 (en) 2015-06-17 2017-10-24 Ii-Vi Laser Enterprise Gmbh Broad area laser including anti-guiding regions for higher-order lateral mode suppression
DE102018106685A1 (de) 2018-03-21 2019-09-26 Osram Opto Semiconductors Gmbh Halbleiterlaser und projektor
CN108400522A (zh) * 2018-04-27 2018-08-14 中国科学院半导体研究所 波长稳定dfb激光器及切趾光栅的制备方法
JP7407027B2 (ja) * 2020-03-09 2023-12-28 パナソニックホールディングス株式会社 半導体発光素子

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4400813A (en) * 1981-07-20 1983-08-23 Bell Telephone Laboratories, Incorporated Crenelated-ridge waveguide laser
DE3277278D1 (en) * 1981-10-19 1987-10-15 Nec Corp Double channel planar buried heterostructure laser
JPS6257275A (ja) 1985-09-06 1987-03-12 Sharp Corp 半導体レ−ザアレイ装置
JPH0821759B2 (ja) * 1987-06-22 1996-03-04 日本電信電話株式会社 半導体レ−ザアレイ
JPH01175281A (ja) * 1987-12-29 1989-07-11 Sharp Corp 半導体レーザアレイ装置
JPH03196588A (ja) * 1989-12-26 1991-08-28 Sony Corp 半導体レーザダイオード
JPH05190972A (ja) * 1992-01-13 1993-07-30 Eastman Kodak Japan Kk レーザダイオード
JPH06326412A (ja) * 1993-05-17 1994-11-25 Mitsubishi Electric Corp 半導体レーザ装置
JPH0854049A (ja) * 1994-08-10 1996-02-27 Mitsuba Electric Mfg Co Ltd アクチュエータ
GB2388958B (en) * 2002-05-25 2005-08-31 Marconi Corp Plc Optical device
JP2004172252A (ja) * 2002-11-19 2004-06-17 Sony Corp 半導体レーザ素子及びアレイ型半導体レーザ素子
JP2005005511A (ja) 2003-06-12 2005-01-06 Fanuc Ltd 半導体レーザ装置
DE602004024451D1 (de) * 2003-12-22 2010-01-14 Panasonic Corp Halbleiterlaser-bauelement und laserprojektor
GB2432456A (en) * 2005-11-21 2007-05-23 Bookham Technology Plc High power semiconductor laser diode
JP4911957B2 (ja) * 2005-12-02 2012-04-04 シャープ株式会社 半導体レーザ素子および応用システム
JP2007258260A (ja) 2006-03-20 2007-10-04 Kyoto Univ ２次元フォトニック結晶面発光レーザ
US7949031B2 (en) 2006-06-16 2011-05-24 Pbc Lasers Gmbh Optoelectronic systems providing high-power high-brightness laser light based on field coupled arrays, bars and stacks of semicondutor diode lasers
JP2009088425A (ja) 2007-10-03 2009-04-23 Sony Corp 半導体レーザおよびその製造方法
DE102008012859B4 (de) * 2007-12-21 2023-10-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laserlichtquelle mit einer Filterstruktur

Also Published As

Publication number Publication date
KR101824613B1 (ko) 2018-02-01
DE102009035639B4 (de) 2019-10-24
TWI416829B (zh) 2013-11-21
DE102009035639A1 (de) 2011-02-17
KR101714596B1 (ko) 2017-03-09
TW201115870A (en) 2011-05-01
EP2460241A1 (de) 2012-06-06
JP2013501347A (ja) 2013-01-10
KR20120043037A (ko) 2012-05-03
EP2460241B1 (de) 2013-08-07
US20120213241A1 (en) 2012-08-23
KR20170027884A (ko) 2017-03-10
CN102474078A (zh) 2012-05-23
US8619833B2 (en) 2013-12-31
WO2011012100A1 (de) 2011-02-03
CN102474078B (zh) 2014-09-17

Similar Documents

Publication Publication Date Title
US8227818B2 (en) Horizontal emitting, vertical emitting, beam shaped, distributed feedback (DFB) lasers fabricated by growth over a patterned substrate with multiple overgrowth
US8179941B2 (en) Laser diode and method of manufacturing the same
JP5701296B2 (ja) エピタキシャル積層体を備えたブロードエリアレーザ及びブロードエリアレーザの製造方法
CN101390263B (zh) 半导体激光装置
JP2013501347A5 (https=)
US8855161B2 (en) Semiconductor laser device, method of manufacturing semiconductor laser device, and semiconductor laser array
JP2018500762A (ja) オプトエレクトロニクス部品
KR101431306B1 (ko) 복사 방출 소자의 제조 방법 및 복사 방출 소자
US7564884B1 (en) Ridge-stripe semiconductor laser
TWI236195B (en) Vertical cavity surface emitting laser including indium and antimony in the active region
KR20060038057A (ko) 반도체 레이저 소자 및 그 제조 방법
CN113632331A (zh) 用于产生激光辐射的装置
JP5644695B2 (ja) 面発光レーザ素子
JP2024518703A (ja) 発光半導体チップを製造する方法および発光半導体チップ
CN114552389B (zh) GaN基激光二极管的脊波导组件、GaN基激光二极管及方法
CN120601253B (zh) 半导体激光器及其制备方法
CN223912059U (zh) 表面发射激光器及激光雷达
JP5437109B2 (ja) 半導体レーザ装置
JP7182532B2 (ja) 半導体発光素子及び発光装置
EP4309254A1 (en) Semiconductor laser diode array and the method for manufacturing a two-dimensional semiconductor laser diode array
JP2009146920A (ja) 半導体レーザ
JP2009094386A (ja) 窒化物半導体レーザ素子
JP2006253232A (ja) レーザダイオードチップ、レーザダイオード及びレーザダイオードチップの製造方法
JP2005243721A (ja) 半導体レーザ装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130227

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20130227

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20131129

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20131209

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20140213

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20140220

A524 Written submission of copy of amendment under article 19 pct

Free format text: JAPANESE INTERMEDIATE CODE: A524

Effective date: 20140603

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140604

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20141014

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20141225

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20150126

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20150217

R150 Certificate of patent or registration of utility model

Ref document number: 5701296

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250