DE102009035639B4 - Breitstreifenlaser mit einem epitaktischen Schichtenstapel und Verfahren zu dessen Herstellung - Google Patents

Breitstreifenlaser mit einem epitaktischen Schichtenstapel und Verfahren zu dessen Herstellung Download PDF

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Publication number
DE102009035639B4
DE102009035639B4 DE102009035639.8A DE102009035639A DE102009035639B4 DE 102009035639 B4 DE102009035639 B4 DE 102009035639B4 DE 102009035639 A DE102009035639 A DE 102009035639A DE 102009035639 B4 DE102009035639 B4 DE 102009035639B4
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layer
webs
layer stack
wide
trenches
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DE102009035639.8A
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German (de)
English (en)
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DE102009035639A1 (de
Inventor
Alfred Lell
Stefanie Brüninghoff
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Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Priority to DE102009035639.8A priority Critical patent/DE102009035639B4/de
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to US13/388,257 priority patent/US8619833B2/en
Priority to KR1020127005343A priority patent/KR101714596B1/ko
Priority to JP2012521960A priority patent/JP5701296B2/ja
Priority to CN201080033769.3A priority patent/CN102474078B/zh
Priority to PCT/DE2010/000751 priority patent/WO2011012100A1/de
Priority to KR1020177005943A priority patent/KR101824613B1/ko
Priority to EP10740507.8A priority patent/EP2460241B1/de
Priority to TW099122413A priority patent/TWI416829B/zh
Publication of DE102009035639A1 publication Critical patent/DE102009035639A1/de
Application granted granted Critical
Publication of DE102009035639B4 publication Critical patent/DE102009035639B4/de
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2036—Broad area lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2214—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on oxides or nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4081—Near-or far field control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques
    • H01S5/2086—Methods of obtaining the confinement using special etching techniques lateral etch control, e.g. mask induced

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
  • Laser Beam Processing (AREA)
DE102009035639.8A 2009-07-31 2009-07-31 Breitstreifenlaser mit einem epitaktischen Schichtenstapel und Verfahren zu dessen Herstellung Active DE102009035639B4 (de)

Priority Applications (9)

Application Number Priority Date Filing Date Title
DE102009035639.8A DE102009035639B4 (de) 2009-07-31 2009-07-31 Breitstreifenlaser mit einem epitaktischen Schichtenstapel und Verfahren zu dessen Herstellung
KR1020127005343A KR101714596B1 (ko) 2009-07-31 2010-06-28 에피택셜 층 스택을 구비하는 대면적 레이저 그리고 대면적 레이저를 제조하기 위한 방법
JP2012521960A JP5701296B2 (ja) 2009-07-31 2010-06-28 エピタキシャル積層体を備えたブロードエリアレーザ及びブロードエリアレーザの製造方法
CN201080033769.3A CN102474078B (zh) 2009-07-31 2010-06-28 带有外延层堆叠的宽条激光器及其制造方法
US13/388,257 US8619833B2 (en) 2009-07-31 2010-06-28 Broad area laser having an epitaxial stack of layers and method for the production thereof
PCT/DE2010/000751 WO2011012100A1 (de) 2009-07-31 2010-06-28 Breitstreifenlaser mit einem epitaktischen schichtenstapel und verfahren zu dessen herstellung
KR1020177005943A KR101824613B1 (ko) 2009-07-31 2010-06-28 에피택셜 층 스택을 구비하는 대면적 레이저 그리고 대면적 레이저를 제조하기 위한 방법
EP10740507.8A EP2460241B1 (de) 2009-07-31 2010-06-28 Breitstreifenlaser mit einem epitaktischen schichtenstapel und verfahren zu dessen herstellung
TW099122413A TWI416829B (zh) 2009-07-31 2010-07-08 具有磊晶層疊之寬面雷射及其製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102009035639.8A DE102009035639B4 (de) 2009-07-31 2009-07-31 Breitstreifenlaser mit einem epitaktischen Schichtenstapel und Verfahren zu dessen Herstellung

Publications (2)

Publication Number Publication Date
DE102009035639A1 DE102009035639A1 (de) 2011-02-17
DE102009035639B4 true DE102009035639B4 (de) 2019-10-24

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DE102009035639.8A Active DE102009035639B4 (de) 2009-07-31 2009-07-31 Breitstreifenlaser mit einem epitaktischen Schichtenstapel und Verfahren zu dessen Herstellung

Country Status (8)

Country Link
US (1) US8619833B2 (https=)
EP (1) EP2460241B1 (https=)
JP (1) JP5701296B2 (https=)
KR (2) KR101824613B1 (https=)
CN (1) CN102474078B (https=)
DE (1) DE102009035639B4 (https=)
TW (1) TWI416829B (https=)
WO (1) WO2011012100A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010020625B4 (de) 2010-05-14 2024-02-22 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines kantenemittierenden Halbleiterlasers
US10179918B2 (en) 2015-05-07 2019-01-15 Sangamo Therapeutics, Inc. Methods and compositions for increasing transgene activity
US9800020B2 (en) 2015-06-17 2017-10-24 Ii-Vi Laser Enterprise Gmbh Broad area laser including anti-guiding regions for higher-order lateral mode suppression
DE102018106685A1 (de) 2018-03-21 2019-09-26 Osram Opto Semiconductors Gmbh Halbleiterlaser und projektor
CN108400522A (zh) * 2018-04-27 2018-08-14 中国科学院半导体研究所 波长稳定dfb激光器及切趾光栅的制备方法
JP7407027B2 (ja) * 2020-03-09 2023-12-28 パナソニックホールディングス株式会社 半導体発光素子

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2180690A (en) 1985-09-06 1987-04-01 Sharp Kk Semiconductor laser array device
US20080273563A1 (en) * 2005-11-21 2008-11-06 Berthold Schmidt High Power Semiconductor Laser Diode
US20090092163A1 (en) 2007-10-03 2009-04-09 Sony Corporation Laser diode and method of manufacturing the same
US20090116525A1 (en) 2006-06-16 2009-05-07 Vitaly Shchukin Optoelectronic systems providing high-power high-brightness laser light based on field coupled arrays, bars and stacks of semicondutor diode lasers
WO2009080012A1 (de) * 2007-12-21 2009-07-02 Osram Opto Semiconductors Gmbh Laserlichtquelle und verfahren zur herstellung einer laserlichtquelle

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US4400813A (en) * 1981-07-20 1983-08-23 Bell Telephone Laboratories, Incorporated Crenelated-ridge waveguide laser
DE3277278D1 (en) * 1981-10-19 1987-10-15 Nec Corp Double channel planar buried heterostructure laser
JPH0821759B2 (ja) * 1987-06-22 1996-03-04 日本電信電話株式会社 半導体レ−ザアレイ
JPH01175281A (ja) * 1987-12-29 1989-07-11 Sharp Corp 半導体レーザアレイ装置
JPH03196588A (ja) * 1989-12-26 1991-08-28 Sony Corp 半導体レーザダイオード
JPH05190972A (ja) * 1992-01-13 1993-07-30 Eastman Kodak Japan Kk レーザダイオード
JPH06326412A (ja) * 1993-05-17 1994-11-25 Mitsubishi Electric Corp 半導体レーザ装置
JPH0854049A (ja) * 1994-08-10 1996-02-27 Mitsuba Electric Mfg Co Ltd アクチュエータ
GB2388958B (en) * 2002-05-25 2005-08-31 Marconi Corp Plc Optical device
JP2004172252A (ja) * 2002-11-19 2004-06-17 Sony Corp 半導体レーザ素子及びアレイ型半導体レーザ素子
JP2005005511A (ja) 2003-06-12 2005-01-06 Fanuc Ltd 半導体レーザ装置
DE602004024451D1 (de) * 2003-12-22 2010-01-14 Panasonic Corp Halbleiterlaser-bauelement und laserprojektor
JP4911957B2 (ja) * 2005-12-02 2012-04-04 シャープ株式会社 半導体レーザ素子および応用システム
JP2007258260A (ja) 2006-03-20 2007-10-04 Kyoto Univ ２次元フォトニック結晶面発光レーザ

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2180690A (en) 1985-09-06 1987-04-01 Sharp Kk Semiconductor laser array device
US20080273563A1 (en) * 2005-11-21 2008-11-06 Berthold Schmidt High Power Semiconductor Laser Diode
US20090116525A1 (en) 2006-06-16 2009-05-07 Vitaly Shchukin Optoelectronic systems providing high-power high-brightness laser light based on field coupled arrays, bars and stacks of semicondutor diode lasers
US20090092163A1 (en) 2007-10-03 2009-04-09 Sony Corporation Laser diode and method of manufacturing the same
WO2009080012A1 (de) * 2007-12-21 2009-07-02 Osram Opto Semiconductors Gmbh Laserlichtquelle und verfahren zur herstellung einer laserlichtquelle

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KELEMEN, Márc ; GILLY, Jürgen ; FRIEDMAN, Patrick: Diodenlaser höchster Brillanz im nahenund mittleren Infrarot. In: Photonik, Bd. 41, 2009, H. 6, S. 42-44. - ISSN 1432-9778 *

Also Published As

Publication number Publication date
KR101824613B1 (ko) 2018-02-01
TWI416829B (zh) 2013-11-21
DE102009035639A1 (de) 2011-02-17
KR101714596B1 (ko) 2017-03-09
TW201115870A (en) 2011-05-01
EP2460241A1 (de) 2012-06-06
JP2013501347A (ja) 2013-01-10
KR20120043037A (ko) 2012-05-03
EP2460241B1 (de) 2013-08-07
US20120213241A1 (en) 2012-08-23
KR20170027884A (ko) 2017-03-10
CN102474078A (zh) 2012-05-23
US8619833B2 (en) 2013-12-31
WO2011012100A1 (de) 2011-02-03
JP5701296B2 (ja) 2015-04-15
CN102474078B (zh) 2014-09-17

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