CN102474078B - 带有外延层堆叠的宽条激光器及其制造方法 - Google Patents

带有外延层堆叠的宽条激光器及其制造方法 Download PDF

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Publication number
CN102474078B
CN102474078B CN201080033769.3A CN201080033769A CN102474078B CN 102474078 B CN102474078 B CN 102474078B CN 201080033769 A CN201080033769 A CN 201080033769A CN 102474078 B CN102474078 B CN 102474078B
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contact pin
stacking
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Chinese (zh)
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CN102474078A (zh
Inventor
阿尔弗雷德·莱尔
斯蒂芬妮·布鲁宁戈夫
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2214—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on oxides or nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2036—Broad area lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques
    • H01S5/2086—Methods of obtaining the confinement using special etching techniques lateral etch control, e.g. mask induced
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4081—Near-or far field control

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
  • Laser Beam Processing (AREA)
CN201080033769.3A 2009-07-31 2010-06-28 带有外延层堆叠的宽条激光器及其制造方法 Active CN102474078B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009035639.8 2009-07-31
DE102009035639.8A DE102009035639B4 (de) 2009-07-31 2009-07-31 Breitstreifenlaser mit einem epitaktischen Schichtenstapel und Verfahren zu dessen Herstellung
PCT/DE2010/000751 WO2011012100A1 (de) 2009-07-31 2010-06-28 Breitstreifenlaser mit einem epitaktischen schichtenstapel und verfahren zu dessen herstellung

Publications (2)

Publication Number Publication Date
CN102474078A CN102474078A (zh) 2012-05-23
CN102474078B true CN102474078B (zh) 2014-09-17

Family

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CN201080033769.3A Active CN102474078B (zh) 2009-07-31 2010-06-28 带有外延层堆叠的宽条激光器及其制造方法

Country Status (8)

Country Link
US (1) US8619833B2 (https=)
EP (1) EP2460241B1 (https=)
JP (1) JP5701296B2 (https=)
KR (2) KR101824613B1 (https=)
CN (1) CN102474078B (https=)
DE (1) DE102009035639B4 (https=)
TW (1) TWI416829B (https=)
WO (1) WO2011012100A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010020625B4 (de) 2010-05-14 2024-02-22 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines kantenemittierenden Halbleiterlasers
US10179918B2 (en) 2015-05-07 2019-01-15 Sangamo Therapeutics, Inc. Methods and compositions for increasing transgene activity
US9800020B2 (en) 2015-06-17 2017-10-24 Ii-Vi Laser Enterprise Gmbh Broad area laser including anti-guiding regions for higher-order lateral mode suppression
DE102018106685A1 (de) 2018-03-21 2019-09-26 Osram Opto Semiconductors Gmbh Halbleiterlaser und projektor
CN108400522A (zh) * 2018-04-27 2018-08-14 中国科学院半导体研究所 波长稳定dfb激光器及切趾光栅的制备方法
JP7407027B2 (ja) * 2020-03-09 2023-12-28 パナソニックホールディングス株式会社 半導体発光素子

Citations (6)

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US4400813A (en) * 1981-07-20 1983-08-23 Bell Telephone Laboratories, Incorporated Crenelated-ridge waveguide laser
GB2180690A (en) * 1985-09-06 1987-04-01 Sharp Kk Semiconductor laser array device
US5299219A (en) * 1992-01-13 1994-03-29 Eastman Kodak Company Stripe-type laser diode used as a light source
GB2388958B (en) * 2002-05-25 2005-08-31 Marconi Corp Plc Optical device
JP2007157906A (ja) * 2005-12-02 2007-06-21 Sharp Corp 半導体レーザ素子および応用システム
US20090092163A1 (en) * 2007-10-03 2009-04-09 Sony Corporation Laser diode and method of manufacturing the same

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DE3277278D1 (en) * 1981-10-19 1987-10-15 Nec Corp Double channel planar buried heterostructure laser
JPH0821759B2 (ja) * 1987-06-22 1996-03-04 日本電信電話株式会社 半導体レ−ザアレイ
JPH01175281A (ja) * 1987-12-29 1989-07-11 Sharp Corp 半導体レーザアレイ装置
JPH03196588A (ja) * 1989-12-26 1991-08-28 Sony Corp 半導体レーザダイオード
JPH06326412A (ja) * 1993-05-17 1994-11-25 Mitsubishi Electric Corp 半導体レーザ装置
JPH0854049A (ja) * 1994-08-10 1996-02-27 Mitsuba Electric Mfg Co Ltd アクチュエータ
JP2004172252A (ja) * 2002-11-19 2004-06-17 Sony Corp 半導体レーザ素子及びアレイ型半導体レーザ素子
JP2005005511A (ja) 2003-06-12 2005-01-06 Fanuc Ltd 半導体レーザ装置
DE602004024451D1 (de) * 2003-12-22 2010-01-14 Panasonic Corp Halbleiterlaser-bauelement und laserprojektor
GB2432456A (en) * 2005-11-21 2007-05-23 Bookham Technology Plc High power semiconductor laser diode
JP2007258260A (ja) 2006-03-20 2007-10-04 Kyoto Univ ２次元フォトニック結晶面発光レーザ
US7949031B2 (en) 2006-06-16 2011-05-24 Pbc Lasers Gmbh Optoelectronic systems providing high-power high-brightness laser light based on field coupled arrays, bars and stacks of semicondutor diode lasers
DE102008012859B4 (de) * 2007-12-21 2023-10-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laserlichtquelle mit einer Filterstruktur

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4400813A (en) * 1981-07-20 1983-08-23 Bell Telephone Laboratories, Incorporated Crenelated-ridge waveguide laser
GB2180690A (en) * 1985-09-06 1987-04-01 Sharp Kk Semiconductor laser array device
US5299219A (en) * 1992-01-13 1994-03-29 Eastman Kodak Company Stripe-type laser diode used as a light source
GB2388958B (en) * 2002-05-25 2005-08-31 Marconi Corp Plc Optical device
JP2007157906A (ja) * 2005-12-02 2007-06-21 Sharp Corp 半導体レーザ素子および応用システム
US20090092163A1 (en) * 2007-10-03 2009-04-09 Sony Corporation Laser diode and method of manufacturing the same

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JP平1-175281A 1989.07.11
JP特开2007-157906A 2007.06.21

Also Published As

Publication number Publication date
KR101824613B1 (ko) 2018-02-01
DE102009035639B4 (de) 2019-10-24
TWI416829B (zh) 2013-11-21
DE102009035639A1 (de) 2011-02-17
KR101714596B1 (ko) 2017-03-09
TW201115870A (en) 2011-05-01
EP2460241A1 (de) 2012-06-06
JP2013501347A (ja) 2013-01-10
KR20120043037A (ko) 2012-05-03
EP2460241B1 (de) 2013-08-07
US20120213241A1 (en) 2012-08-23
KR20170027884A (ko) 2017-03-10
CN102474078A (zh) 2012-05-23
US8619833B2 (en) 2013-12-31
WO2011012100A1 (de) 2011-02-03
JP5701296B2 (ja) 2015-04-15

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