KR101714596B1 - 에피택셜 층 스택을 구비하는 대면적 레이저 그리고 대면적 레이저를 제조하기 위한 방법 - Google Patents

에피택셜 층 스택을 구비하는 대면적 레이저 그리고 대면적 레이저를 제조하기 위한 방법 Download PDF

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KR101714596B1
KR101714596B1 KR1020127005343A KR20127005343A KR101714596B1 KR 101714596 B1 KR101714596 B1 KR 101714596B1 KR 1020127005343 A KR1020127005343 A KR 1020127005343A KR 20127005343 A KR20127005343 A KR 20127005343A KR 101714596 B1 KR101714596 B1 KR 101714596B1
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large area
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layer
area laser
layer stack
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KR20120043037A (ko
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알프레드 렐
슈테파니 브뤼닝호프
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오스람 옵토 세미컨덕터스 게엠베하
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2036—Broad area lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4081—Near-or far field control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques
    • H01S5/2086—Methods of obtaining the confinement using special etching techniques lateral etch control, e.g. mask induced
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2214—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on oxides or nitrides

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
  • Laser Beam Processing (AREA)
KR1020127005343A 2009-07-31 2010-06-28 에피택셜 층 스택을 구비하는 대면적 레이저 그리고 대면적 레이저를 제조하기 위한 방법 Active KR101714596B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009035639.8 2009-07-31
DE102009035639.8A DE102009035639B4 (de) 2009-07-31 2009-07-31 Breitstreifenlaser mit einem epitaktischen Schichtenstapel und Verfahren zu dessen Herstellung
PCT/DE2010/000751 WO2011012100A1 (de) 2009-07-31 2010-06-28 Breitstreifenlaser mit einem epitaktischen schichtenstapel und verfahren zu dessen herstellung

Related Child Applications (1)

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KR1020177005943A Division KR101824613B1 (ko) 2009-07-31 2010-06-28 에피택셜 층 스택을 구비하는 대면적 레이저 그리고 대면적 레이저를 제조하기 위한 방법

Publications (2)

Publication Number Publication Date
KR20120043037A KR20120043037A (ko) 2012-05-03
KR101714596B1 true KR101714596B1 (ko) 2017-03-09

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KR1020127005343A Active KR101714596B1 (ko) 2009-07-31 2010-06-28 에피택셜 층 스택을 구비하는 대면적 레이저 그리고 대면적 레이저를 제조하기 위한 방법
KR1020177005943A Active KR101824613B1 (ko) 2009-07-31 2010-06-28 에피택셜 층 스택을 구비하는 대면적 레이저 그리고 대면적 레이저를 제조하기 위한 방법

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KR1020177005943A Active KR101824613B1 (ko) 2009-07-31 2010-06-28 에피택셜 층 스택을 구비하는 대면적 레이저 그리고 대면적 레이저를 제조하기 위한 방법

Country Status (8)

Country Link
US (1) US8619833B2 (https=)
EP (1) EP2460241B1 (https=)
JP (1) JP5701296B2 (https=)
KR (2) KR101714596B1 (https=)
CN (1) CN102474078B (https=)
DE (1) DE102009035639B4 (https=)
TW (1) TWI416829B (https=)
WO (1) WO2011012100A1 (https=)

Families Citing this family (6)

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DE102010020625B4 (de) 2010-05-14 2024-02-22 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines kantenemittierenden Halbleiterlasers
US10179918B2 (en) 2015-05-07 2019-01-15 Sangamo Therapeutics, Inc. Methods and compositions for increasing transgene activity
US9800020B2 (en) 2015-06-17 2017-10-24 Ii-Vi Laser Enterprise Gmbh Broad area laser including anti-guiding regions for higher-order lateral mode suppression
DE102018106685A1 (de) 2018-03-21 2019-09-26 Osram Opto Semiconductors Gmbh Halbleiterlaser und projektor
CN108400522A (zh) * 2018-04-27 2018-08-14 中国科学院半导体研究所 波长稳定dfb激光器及切趾光栅的制备方法
JP7407027B2 (ja) * 2020-03-09 2023-12-28 パナソニックホールディングス株式会社 半導体発光素子

Citations (2)

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JP2005005511A (ja) 2003-06-12 2005-01-06 Fanuc Ltd 半導体レーザ装置
JP2007258260A (ja) 2006-03-20 2007-10-04 Kyoto Univ ２次元フォトニック結晶面発光レーザ

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US4400813A (en) * 1981-07-20 1983-08-23 Bell Telephone Laboratories, Incorporated Crenelated-ridge waveguide laser
DE3277278D1 (en) * 1981-10-19 1987-10-15 Nec Corp Double channel planar buried heterostructure laser
JPS6257275A (ja) 1985-09-06 1987-03-12 Sharp Corp 半導体レ−ザアレイ装置
JPH0821759B2 (ja) * 1987-06-22 1996-03-04 日本電信電話株式会社 半導体レ−ザアレイ
JPH01175281A (ja) * 1987-12-29 1989-07-11 Sharp Corp 半導体レーザアレイ装置
JPH03196588A (ja) * 1989-12-26 1991-08-28 Sony Corp 半導体レーザダイオード
JPH05190972A (ja) * 1992-01-13 1993-07-30 Eastman Kodak Japan Kk レーザダイオード
JPH06326412A (ja) * 1993-05-17 1994-11-25 Mitsubishi Electric Corp 半導体レーザ装置
JPH0854049A (ja) * 1994-08-10 1996-02-27 Mitsuba Electric Mfg Co Ltd アクチュエータ
GB2388958B (en) * 2002-05-25 2005-08-31 Marconi Corp Plc Optical device
JP2004172252A (ja) * 2002-11-19 2004-06-17 Sony Corp 半導体レーザ素子及びアレイ型半導体レーザ素子
DE602004024451D1 (de) * 2003-12-22 2010-01-14 Panasonic Corp Halbleiterlaser-bauelement und laserprojektor
GB2432456A (en) * 2005-11-21 2007-05-23 Bookham Technology Plc High power semiconductor laser diode
JP4911957B2 (ja) * 2005-12-02 2012-04-04 シャープ株式会社 半導体レーザ素子および応用システム
US7949031B2 (en) 2006-06-16 2011-05-24 Pbc Lasers Gmbh Optoelectronic systems providing high-power high-brightness laser light based on field coupled arrays, bars and stacks of semicondutor diode lasers
JP2009088425A (ja) 2007-10-03 2009-04-23 Sony Corp 半導体レーザおよびその製造方法
DE102008012859B4 (de) * 2007-12-21 2023-10-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laserlichtquelle mit einer Filterstruktur

Patent Citations (2)

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Publication number Priority date Publication date Assignee Title
JP2005005511A (ja) 2003-06-12 2005-01-06 Fanuc Ltd 半導体レーザ装置
JP2007258260A (ja) 2006-03-20 2007-10-04 Kyoto Univ ２次元フォトニック結晶面発光レーザ

Also Published As

Publication number Publication date
CN102474078A (zh) 2012-05-23
WO2011012100A1 (de) 2011-02-03
CN102474078B (zh) 2014-09-17
KR20170027884A (ko) 2017-03-10
TWI416829B (zh) 2013-11-21
JP2013501347A (ja) 2013-01-10
KR20120043037A (ko) 2012-05-03
EP2460241B1 (de) 2013-08-07
US20120213241A1 (en) 2012-08-23
DE102009035639B4 (de) 2019-10-24
JP5701296B2 (ja) 2015-04-15
DE102009035639A1 (de) 2011-02-17
KR101824613B1 (ko) 2018-02-01
TW201115870A (en) 2011-05-01
US8619833B2 (en) 2013-12-31
EP2460241A1 (de) 2012-06-06

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