JP5694538B2 - 六方晶系結晶のナノ構造を備えた光起電力電池 - Google Patents
六方晶系結晶のナノ構造を備えた光起電力電池 Download PDFInfo
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- 239000013078 crystal Substances 0.000 title claims description 42
- 239000002086 nanomaterial Substances 0.000 title description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 36
- 229910052710 silicon Inorganic materials 0.000 claims description 36
- 239000010703 silicon Substances 0.000 claims description 36
- 239000004065 semiconductor Substances 0.000 claims description 35
- 230000000903 blocking effect Effects 0.000 claims description 31
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- 229910052799 carbon Inorganic materials 0.000 claims description 8
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 6
- 239000010408 film Substances 0.000 claims description 5
- 238000000407 epitaxy Methods 0.000 claims description 3
- 230000005693 optoelectronics Effects 0.000 description 34
- 238000010521 absorption reaction Methods 0.000 description 17
- 229910021417 amorphous silicon Inorganic materials 0.000 description 8
- 229910003460 diamond Inorganic materials 0.000 description 8
- 239000010432 diamond Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 5
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000001429 visible spectrum Methods 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002173 high-resolution transmission electron microscopy Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- 239000011856 silicon-based particle Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
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- H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
- H01L31/03682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic Table
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
- H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
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- H01L33/26—Materials of the light emitting region
- H01L33/34—Materials of the light emitting region containing only elements of Group IV of the Periodic Table
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0312—Inorganic materials including, apart from doping materials or other impurities, only AIVBIV compounds, e.g. SiC
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E10/00—Energy generation through renewable energy sources
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- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
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- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Semiconductor Lasers (AREA)
Description
Fissel et al.、“Formation of twinning-superlattice regions by artificial stacking of Si layers(Si層の人工積層による双晶超格子領域の形成)”、Journal of Crystal Growth(結晶成長ジャーナル)290巻、2号 (2006年5月1日)、P.392〜397、doi:10.1016/j.jcrysgro.2006.02.009
Jin Hyeok KimとJeong Yong Lee、“Hexagonal silicon formation by pulsed laser beam annealing(パルスレーザビームアニーリングによる六法晶系シリコンの形成)”、Materials Letters(材料誌)27巻、6号 (1996年8月)、P.275〜279、doi:10.1016/0167-577X(96)00019
Jin Hyeok KimとJeong Yong Lee、“High-resolution transmission electron microscopy study of pulsed laser beam crystallized Si thin film(パルスレーザビームによる結晶化Si薄膜の高分解透過電子顕微鏡による研究):the formation of hexagonal Si and defects(六方晶Siの形成及び欠陥)”、 固体薄膜292巻, 1〜2号 (1997年1月5日)、P.313〜317、 doi:10.1016/S0040-6090(96)09088-8
Yan Zhang et al.、“Stable hexagonal-wurtzite silicon phase by laser ablation(レーザアブレーションによる安定した六方晶-ウルツ鉱型シリコン相)”、応用物理学会誌 75巻、18号 (1999年11月1日)、P.2758〜2760、doi:10.1063/1.125140
結晶の双晶は、六方晶相を部分形成するための一方法でもある。 (A. Fissel et al.、“Formation of twinning-superlattice regions by artificial stacking of Si layers(Si層の人工積層による双晶超格子領域の形成)”、Journal of Crystal Growth(結晶成長ジャーナル)290巻、2号 (2006年5月1日)、P.392〜397、doi:10.1016/j.jcrysgro.2006.02.009.
上記炭素ファミリーの各元素の六方相は、熱力学的に安定な相とは違い、結晶学的パラメータを有しているため、適当な基板上でのエピタキシーや、あるいは適切な機械的歪をかけることによって、上記六方相を安定させることができる。成長が高温で行われた場合や、層が上記基板の熱膨張率とは異なる熱膨張率を有する場合にも、歪が生じる。また、プラズマイオンの運動エネルギーが層の歪を引き起こすと知られているスパッタリングなどの、成膜工程の詳細に起因して歪曲が引き起こされる。
Claims (6)
- 第1の導電層(22)と、第2の導電層(24)と、上記第1の導電層(22)と上記第2の導電層(24)との間に設けられた活性層(26)とを備えた光起電力電池であって、
上記活性層(26)は、ダイヤモンド型結晶構造を有するシリコンの膜間に挟持されたサブミクロンサイズの六方晶系結晶シリコンの薄膜を含み、
上記六方晶系結晶シリコンの膜は、上記ダイヤモンド型結晶構造を有するシリコンの膜間の上記六方晶系結晶シリコンの膜をエピタキシー条件下で成長させることによって、六方晶系結晶の層を圧迫し安定させたものであることを特徴とする光起電力電池。 - 上記活性層は、10nm以上1000nm以下の厚さであることを特徴とする請求項1に記載の光起電力電池。
- 上記活性層が含む炭素ファミリーの単一の元素はシリコンであることを特徴とする請求項1または2に記載の光起電力電池。
- 上記第1の導電層の電子親和力は、上記活性層の電子親和力より小さく、上記第2の導電層のイオン化エネルギーは、上記活性層のイオン化エネルギーより大きいことを特徴とする請求項1から3のいずれか1項に記載の光起電力電池。
- 上記活性層と上記第1の導電層との間に、上記活性層の上記電子親和力に略等しい電子親和力と、上記活性層の上記イオン化エネルギーより小さいイオン化エネルギーとを有する第1のブロッキング層(27)をさらに備え、また、上記活性層と上記第2の導電層との間に、上記活性層の上記電子親和力より大きい電子親和力と、上記活性層の上記イオン化エネルギーに略等しいイオン化エネルギーとを有する第2のブロッキング層(28)をさらに備えていることを特徴とする請求項4に記載の光起電力電池。
- 上記第1のブロッキング層および上記第2のブロッキング層の少なくとも一方は、非ドープの半導体層または非ドープの絶縁層であることを特徴とする請求項5に記載の光起電力電池。
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PCT/US2010/048242 WO2012033493A1 (en) | 2010-09-09 | 2010-09-09 | An optoelectronic device comprising nanostructures of hexagonal type crystals |
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JP2013539607A JP2013539607A (ja) | 2013-10-24 |
JP5694538B2 true JP5694538B2 (ja) | 2015-04-01 |
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US (1) | US9627564B2 (ja) |
EP (1) | EP2614535A1 (ja) |
JP (1) | JP5694538B2 (ja) |
KR (1) | KR101443770B1 (ja) |
CN (1) | CN103283044A (ja) |
AU (1) | AU2010360267B2 (ja) |
CA (1) | CA2810371C (ja) |
WO (1) | WO2012033493A1 (ja) |
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US9634185B2 (en) | 2015-03-26 | 2017-04-25 | Imec Vzw | Optical semiconductor device and method for making the device |
CN106782100A (zh) * | 2016-12-11 | 2017-05-31 | 北京方瑞博石数字技术有限公司 | 一种由六边形光纤组成的光纤导像屏 |
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JPH10106960A (ja) * | 1996-09-25 | 1998-04-24 | Sony Corp | 量子細線の製造方法 |
US6632694B2 (en) | 2001-10-17 | 2003-10-14 | Astralux, Inc. | Double heterojunction light emitting diodes and laser diodes having quantum dot silicon light emitters |
JP2004022625A (ja) * | 2002-06-13 | 2004-01-22 | Murata Mfg Co Ltd | 半導体デバイス及び該半導体デバイスの製造方法 |
US20050126628A1 (en) * | 2002-09-05 | 2005-06-16 | Nanosys, Inc. | Nanostructure and nanocomposite based compositions and photovoltaic devices |
US6927422B2 (en) * | 2002-10-17 | 2005-08-09 | Astralux, Inc. | Double heterojunction light emitting diodes and laser diodes having quantum dot silicon light emitters |
WO2004091262A1 (ja) * | 2003-04-02 | 2004-10-21 | Fujitsu Limited | 有機エレクトロルミネッセンス素子及び有機エレクトロルミネッセンスディスプレイ |
US8232722B2 (en) | 2005-02-16 | 2012-07-31 | Massachusetts Institute Of Technology | Light emitting devices including semiconductor nanocrystals |
JP2007173590A (ja) | 2005-12-22 | 2007-07-05 | Toshiba Corp | 半導体発光材料およびそれを用いた発光素子 |
JP2007184411A (ja) * | 2006-01-06 | 2007-07-19 | Sony Corp | 発光ダイオードおよびその製造方法ならびに集積型発光ダイオードおよびその製造方法ならびに発光ダイオードバックライトならびに発光ダイオード照明装置ならびに発光ダイオードディスプレイならびに電子機器ならびに電子装置およびその製造方法 |
JP4296193B2 (ja) * | 2006-09-29 | 2009-07-15 | 株式会社東芝 | 光デバイス |
US20080230782A1 (en) * | 2006-10-09 | 2008-09-25 | Homer Antoniadis | Photoconductive devices with enhanced efficiency from group iv nanoparticle materials and methods thereof |
EP2117063B1 (en) | 2007-02-19 | 2012-09-26 | Dai Nippon Printing Co., Ltd. | Organic electroluminescence element |
CN101675522B (zh) * | 2007-05-07 | 2012-08-29 | Nxp股份有限公司 | 光敏器件以及制造光敏器件的方法 |
KR101356694B1 (ko) * | 2007-05-10 | 2014-01-29 | 삼성전자주식회사 | 실리콘 나노와이어를 이용한 발광 다이오드 및 그 제조방법 |
US20110139233A1 (en) * | 2009-12-11 | 2011-06-16 | Honeywell International Inc. | Quantum dot solar cell |
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TWI462307B (zh) * | 2008-09-02 | 2014-11-21 | Au Optronics Corp | 具備多重能隙的矽奈米晶體光電池及其在一低溫多晶矽薄膜電晶體面板內之應用 |
KR101064068B1 (ko) * | 2009-02-25 | 2011-09-08 | 엘지이노텍 주식회사 | 발광소자의 제조방법 |
US20110203632A1 (en) * | 2010-02-22 | 2011-08-25 | Rahul Sen | Photovoltaic devices using semiconducting nanotube layers |
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- 2010-09-09 WO PCT/US2010/048242 patent/WO2012033493A1/en active Application Filing
- 2010-09-09 CN CN2010800699514A patent/CN103283044A/zh active Pending
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WO2012033493A1 (en) | 2012-03-15 |
KR20130073959A (ko) | 2013-07-03 |
AU2010360267B2 (en) | 2014-10-30 |
KR101443770B1 (ko) | 2014-09-23 |
CA2810371C (en) | 2016-08-30 |
JP2013539607A (ja) | 2013-10-24 |
US20130168725A1 (en) | 2013-07-04 |
CN103283044A (zh) | 2013-09-04 |
AU2010360267A1 (en) | 2013-04-11 |
CA2810371A1 (en) | 2012-03-15 |
US9627564B2 (en) | 2017-04-18 |
EP2614535A1 (en) | 2013-07-17 |
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