JP5693378B2 - 移動装置 - Google Patents
移動装置 Download PDFInfo
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- JP5693378B2 JP5693378B2 JP2011116767A JP2011116767A JP5693378B2 JP 5693378 B2 JP5693378 B2 JP 5693378B2 JP 2011116767 A JP2011116767 A JP 2011116767A JP 2011116767 A JP2011116767 A JP 2011116767A JP 5693378 B2 JP5693378 B2 JP 5693378B2
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- 239000003507 refrigerant Substances 0.000 claims description 7
- 238000007789 sealing Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 53
- 239000007789 gas Substances 0.000 description 24
- 239000010408 film Substances 0.000 description 21
- 238000010438 heat treatment Methods 0.000 description 15
- 238000003384 imaging method Methods 0.000 description 13
- 239000011521 glass Substances 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000012495 reaction gas Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229960001730 nitrous oxide Drugs 0.000 description 1
- 235000013842 nitrous oxide Nutrition 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- Chemical Vapour Deposition (AREA)
Description
Claims (4)
- 互いに直交する同一平面内の2方向をX軸方向及びY軸方向とし、その面内の回転方向をθ方向として、処理室内に設置される所定の部品を保持し、この状態でX軸方向、Y軸方向及びθ方向の少なくとも一方向にこの部品を移動する移動装置であって、
X軸方向及びY軸方向に直交する方向をZ軸方向とし、Z軸方向に所定間隔を存して配置された固定プレートと可動枠とを備え、
可動枠に少なくとも3個のアクチュエータが設けられ、これら各アクチュエータのZ軸方向にのびる連結ロッドで固定プレートと可動枠とが相互に連結され、各アクチュエータの作動によりX軸方向、Y軸方向及びθ方向の少なくとも一方向に、固定プレートに対して可動枠が相対移動自在であると共に、この可動プレートに複数本の保持ロッドが立設され、この保持ロッドが、処理室を画成する外壁面に形成した透孔に設けたシール部品を介して処理室内に突出させて上記部品を保持するように構成したことを特徴とする移動装置。 - 前記固定プレートは、開口を備え、この開口に真空フランジが嵌着され、この真空フランジを介して、上記外壁面に着脱自在に装着されるものであることを特徴とする請求項1記載の移動装置。
- 前記真空フランジの内部に冷媒を循環する冷媒循環路を設けたことを特徴とする請求項2記載の移動装置。
- 前記可動枠の少なくとも一辺が着脱自在であると共に、前記可動枠及び前記固定プレートに各保持ロッドが着脱自在に取り付けられていることを特徴とする請求項1〜請求項3のいずれか1項に記載の移動装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011116767A JP5693378B2 (ja) | 2011-05-25 | 2011-05-25 | 移動装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011116767A JP5693378B2 (ja) | 2011-05-25 | 2011-05-25 | 移動装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012246506A JP2012246506A (ja) | 2012-12-13 |
JP5693378B2 true JP5693378B2 (ja) | 2015-04-01 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2011116767A Active JP5693378B2 (ja) | 2011-05-25 | 2011-05-25 | 移動装置 |
Country Status (1)
Country | Link |
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JP (1) | JP5693378B2 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11251019B2 (en) * | 2016-12-15 | 2022-02-15 | Toyota Jidosha Kabushiki Kaisha | Plasma device |
KR102405438B1 (ko) * | 2018-06-25 | 2022-06-03 | 캐논 톡키 가부시키가이샤 | 마스크 위치조정장치, 성막장치, 마스크 위치조정방법, 성막방법, 및 전자디바이스의 제조방법 |
JP7488138B2 (ja) * | 2020-07-07 | 2024-05-21 | 東京エレクトロン株式会社 | 真空処理装置、及び真空処理装置の制御方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4596794B2 (ja) * | 2004-02-27 | 2010-12-15 | 日立造船株式会社 | 真空蒸着用アライメント装置 |
JP4494832B2 (ja) * | 2004-03-11 | 2010-06-30 | 株式会社アルバック | アライメント装置及び成膜装置 |
JP2006206980A (ja) * | 2005-01-31 | 2006-08-10 | Canon Inc | マスク蒸着装置および成膜方法 |
KR101173512B1 (ko) * | 2005-08-25 | 2012-08-14 | 히다치 조센 가부시키가이샤 | 진공 증착용 얼라인먼트 장치 |
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2011
- 2011-05-25 JP JP2011116767A patent/JP5693378B2/ja active Active
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Publication number | Publication date |
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JP2012246506A (ja) | 2012-12-13 |
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