JP5678323B2 - 半導体基板用放熱板 - Google Patents
半導体基板用放熱板 Download PDFInfo
- Publication number
- JP5678323B2 JP5678323B2 JP2010179600A JP2010179600A JP5678323B2 JP 5678323 B2 JP5678323 B2 JP 5678323B2 JP 2010179600 A JP2010179600 A JP 2010179600A JP 2010179600 A JP2010179600 A JP 2010179600A JP 5678323 B2 JP5678323 B2 JP 5678323B2
- Authority
- JP
- Japan
- Prior art keywords
- pair
- semiconductor substrate
- heat sink
- protrusions
- protrusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 61
- 239000000758 substrate Substances 0.000 title claims description 58
- 229910000679 solder Inorganic materials 0.000 claims description 35
- 238000003825 pressing Methods 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 230000007547 defect Effects 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 5
- 230000017525 heat dissipation Effects 0.000 description 5
- 229910000881 Cu alloy Inorganic materials 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000003892 spreading Methods 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 230000008961 swelling Effects 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 235000013372 meat Nutrition 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
1a 半導体基板搭載面
2a 半田
3 半導体基板
10,10 一対の突起
11 窪み
12 窪みの底面
13,13 一対の斜面
14,14 窪みの底面の一対の長辺部
15,22 加圧部材
17,24 加圧部材の先端面
19,19 加圧部材の一対の斜面
26,26 加圧部材の一対の斜面
Claims (3)
- 半導体基板を半田接合により搭載するための放熱板であって、半導体基板搭載面に前記半導体基板との間隔を確保するための突起群を備え、該突起群は一対の突起の集合体であり、該一対の突起は、前記半導体基板搭載面に形成される窪みの両側に分離して形成され、前記一対の突起間の溝が前記半導体基板搭載面上に供給される半田の流れ方向に向くように前記一対の突起が配設されている、半導体基板用放熱板。
- 前記窪みが、底面と、該底面の互いに対向する部位から上向きに広がりながら延びる一対の斜面とで形成され、該一対の斜面に連続して前記一対の突起が形成されている、請求項1に記載の半導体基板用放熱板。
- 前記底面が長方形状であり、前記一対の斜面が前記底面の一対の長辺部から上向きに広がりながら延びている、請求項2に記載の半導体基板用放熱板。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010179600A JP5678323B2 (ja) | 2010-08-10 | 2010-08-10 | 半導体基板用放熱板 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010179600A JP5678323B2 (ja) | 2010-08-10 | 2010-08-10 | 半導体基板用放熱板 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012039007A JP2012039007A (ja) | 2012-02-23 |
JP5678323B2 true JP5678323B2 (ja) | 2015-03-04 |
Family
ID=45850645
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010179600A Active JP5678323B2 (ja) | 2010-08-10 | 2010-08-10 | 半導体基板用放熱板 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5678323B2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2752240B1 (en) | 2011-08-31 | 2021-03-03 | Sekisui Chemical Co., Ltd. | Method for manufacturing catalyst for oxygenate synthesis and method for manufacturing oxygenate |
JP2019149479A (ja) * | 2018-02-27 | 2019-09-05 | トヨタ自動車株式会社 | 半導体装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1050928A (ja) * | 1996-05-27 | 1998-02-20 | Toshiba Corp | 半導体装置およびその製造方法 |
JP4154793B2 (ja) * | 1999-03-25 | 2008-09-24 | 三菱電機株式会社 | 半導体装置の製造方法並びに製造装置 |
JP5130533B2 (ja) * | 2005-09-21 | 2013-01-30 | Dowaメタルテック株式会社 | 突起を有する半導体基板用放熱板およびその製造方法 |
JP2012033815A (ja) * | 2010-08-02 | 2012-02-16 | Aisin Aw Co Ltd | 伝熱板 |
-
2010
- 2010-08-10 JP JP2010179600A patent/JP5678323B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
JP2012039007A (ja) | 2012-02-23 |
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