JP5677449B2 - 電子装置 - Google Patents
電子装置 Download PDFInfo
- Publication number
- JP5677449B2 JP5677449B2 JP2012540876A JP2012540876A JP5677449B2 JP 5677449 B2 JP5677449 B2 JP 5677449B2 JP 2012540876 A JP2012540876 A JP 2012540876A JP 2012540876 A JP2012540876 A JP 2012540876A JP 5677449 B2 JP5677449 B2 JP 5677449B2
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- Prior art keywords
- inorganic particles
- insulating layer
- inorganic
- resin
- resin layer
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Images
Classifications
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- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Acoustics & Sound (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Description
図1に示す電子装置1は、チップ部品2と、配線基板3と、樹脂層4と、無機絶縁層5とを具備している。チップ部品2は、電子素子22を有する。配線基板3は、電子素子22を収容する空間を介してチップ部品2が搭載されている。樹脂層4は、空間を囲むようにしてチップ部品2の表面から配線基板3の表面にかけて設けられている。無機絶縁層5は、樹脂層4に設けられ、かつ、空間の側方に位置する。
図3に示す例においては、電子装置1として、マイクロミラーデバイス、光デバイス、マイクロポンプ等として使用される。
の溶剤を混合している場合には、最も沸点の低い溶剤の沸点)未満に設定される。
2:チップ部品
3:配線基板
4:樹脂層
5:無機絶縁層
6:バンプ
7:第1の無機粒子
8:樹脂
9:第1ネック部
10:第2の無機粒子
11:第2ネック部
Claims (9)
- 電子素子を有するチップ部品と、
前記電子素子を収容する空間を介して前記チップ部品が搭載される配線基板と、
前記空間を囲むようにして前記チップ部品の表面から前記配線基板の表面にかけて設けられる樹脂層と、
前記樹脂層に設けられ、かつ、前記空間の側方に位置する無機絶縁層とを備えており、
前記無機絶縁層は、前記樹脂層の内表面に設けられていることを特徴とする電子装置。 - 電子素子を有するチップ部品と、
前記電子素子を収容する空間を介して前記チップ部品が搭載される配線基板と、
前記空間を囲むようにして前記チップ部品の表面から前記配線基板の表面にかけて設けられる樹脂層と、
前記樹脂層に設けられ、かつ、前記空間の側方に位置する無機絶縁層とを備えており、
前記無機絶縁層は、前記樹脂層の内部に設けられていることを特徴とする電子装置。 - 前記樹脂層、前記無機絶縁層および前記チップ部品の熱膨張係数を、それぞれα1、α2およびα3とした際に、α1>α2>α3の関係を満たす請求項1に記載の電子装置。
- 前記無機絶縁層は、
粒径が130nm以下の複数の第1の無機粒子を含み、
前記複数の第1の無機粒子は、互いに結合して三次元マトリクス構造となっていることを特徴とする請求項1〜3のいずれかに記載の電子装置。 - 前記三次元マトリクス構造をなす前記第1の無機粒子間に樹脂が存在する請求項4に記載の電子装置。
- 前記第1の無機粒子同士が第1のネック部を介して互いに結合している請求項4又は請求項5に記載の電子装置。
- 前記無機絶縁層は、粒径が160nm以上の複数の第2の無機粒子をさらに含み、
前記第2の無機粒子同士は、前記複数の第1の無機粒子を互いに結合してなる三次元マトリクス構造を介して連結されていることを特徴とする請求項4〜6のいずれかに記載の電子装置。 - 前記第1の無機粒子および前記第2の無機粒子は、同一材料から成ることを特徴とする請求項7に記載の電子装置。
- 前記第1の無機粒子および前記第2の無機粒子は第2のネック部を介して結合している請求項7又は請求項8に記載の電子装置。
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KR101506130B1 (ko) * | 2012-09-06 | 2015-03-26 | 시그네틱스 주식회사 | 보강수지를 포함하는 플라스틱 볼 그리드 어래이 패키지 |
JP6315650B2 (ja) * | 2013-07-31 | 2018-04-25 | 太陽誘電株式会社 | 電子デバイス |
JP2015056501A (ja) * | 2013-09-11 | 2015-03-23 | セイコーエプソン株式会社 | 回路基板、回路基板の製造方法、電子デバイス、電子機器および移動体 |
US9793877B2 (en) * | 2013-12-17 | 2017-10-17 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Encapsulated bulk acoustic wave (BAW) resonator device |
CN106233625B (zh) * | 2014-05-17 | 2019-06-07 | 京瓷株式会社 | 压电部件 |
US20160057897A1 (en) * | 2014-08-22 | 2016-02-25 | Apple Inc. | Shielding Can With Internal Magnetic Shielding Layer |
US9368750B1 (en) * | 2014-12-04 | 2016-06-14 | Panasonic Intellectual Property Management Co., Ltd. | Method for fabricating intermediate member of electronic element and method for fabricating electronic element |
DE102015223449A1 (de) * | 2015-11-26 | 2017-06-01 | Robert Bosch Gmbh | Elektrische Vorrichtung mit einer Umhüllmasse |
DE102015223415A1 (de) * | 2015-11-26 | 2017-06-01 | Robert Bosch Gmbh | Verfahren zur Herstellung einer elektrischen Vorrichtung mit einer Umhüllmasse |
CN105552247B (zh) * | 2015-12-08 | 2018-10-26 | 上海天马微电子有限公司 | 复合基板、柔性显示装置及其制备方法 |
CN105958959A (zh) * | 2016-06-29 | 2016-09-21 | 维沃移动通信有限公司 | 一种晶振和其制造方法 |
CN106169918A (zh) * | 2016-06-29 | 2016-11-30 | 维沃移动通信有限公司 | 一种晶振及其制造方法 |
KR102522785B1 (ko) * | 2017-09-29 | 2023-04-18 | 나가세케무텍쿠스가부시키가이샤 | 실장 구조체의 제조 방법 및 이것에 이용되는 적층 시트 |
US11139164B2 (en) * | 2019-12-12 | 2021-10-05 | Raytheon Company | Electronic device including hermetic micro-cavity and methods of preparing the same |
JP7454129B2 (ja) * | 2020-03-18 | 2024-03-22 | 富士電機株式会社 | 半導体装置 |
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