JP5675195B2 - プラズマ処理装置及びプラズマ処理方法 - Google Patents

プラズマ処理装置及びプラズマ処理方法 Download PDF

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Publication number
JP5675195B2
JP5675195B2 JP2010162410A JP2010162410A JP5675195B2 JP 5675195 B2 JP5675195 B2 JP 5675195B2 JP 2010162410 A JP2010162410 A JP 2010162410A JP 2010162410 A JP2010162410 A JP 2010162410A JP 5675195 B2 JP5675195 B2 JP 5675195B2
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Japan
Prior art keywords
processing
film
plasma
etching
processed
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Active
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JP2010162410A
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English (en)
Japanese (ja)
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JP2012028357A (ja
JP2012028357A5 (https=
Inventor
白石　大輔
大輔 白石
鹿子嶋　昭
昭 鹿子嶋
智己 井上
智己 井上
茂 中元
茂 中元
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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Publication date
Application filed by Hitachi High Technologies Corp filed Critical Hitachi High Technologies Corp
Priority to JP2010162410A priority Critical patent/JP5675195B2/ja
Priority to TW099125919A priority patent/TWI431685B/zh
Priority to KR1020100075580A priority patent/KR101274526B1/ko
Priority to US12/856,725 priority patent/US8784677B2/en
Publication of JP2012028357A publication Critical patent/JP2012028357A/ja
Publication of JP2012028357A5 publication Critical patent/JP2012028357A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H10P50/285—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means of materials not containing Si, e.g. PZT or Al2O3

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
JP2010162410A 2010-07-20 2010-07-20 プラズマ処理装置及びプラズマ処理方法 Active JP5675195B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2010162410A JP5675195B2 (ja) 2010-07-20 2010-07-20 プラズマ処理装置及びプラズマ処理方法
TW099125919A TWI431685B (zh) 2010-07-20 2010-08-04 Plasma processing device and plasma processing method
KR1020100075580A KR101274526B1 (ko) 2010-07-20 2010-08-05 플라즈마처리장치 및 플라즈마처리방법
US12/856,725 US8784677B2 (en) 2010-07-20 2010-08-16 Plasma processing apparatus and plasma processing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010162410A JP5675195B2 (ja) 2010-07-20 2010-07-20 プラズマ処理装置及びプラズマ処理方法

Publications (3)

Publication Number Publication Date
JP2012028357A JP2012028357A (ja) 2012-02-09
JP2012028357A5 JP2012028357A5 (https=) 2013-08-29
JP5675195B2 true JP5675195B2 (ja) 2015-02-25

Family

ID=45492593

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010162410A Active JP5675195B2 (ja) 2010-07-20 2010-07-20 プラズマ処理装置及びプラズマ処理方法

Country Status (4)

Country Link
US (1) US8784677B2 (https=)
JP (1) JP5675195B2 (https=)
KR (1) KR101274526B1 (https=)
TW (1) TWI431685B (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6549917B2 (ja) * 2015-06-26 2019-07-24 株式会社日立ハイテクノロジーズ プラズマ処理装置およびそのデータ解析装置
WO2024100849A1 (ja) 2022-11-10 2024-05-16 株式会社日立ハイテク エージング条件の評価装置及び設定方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4051470B2 (ja) * 1999-05-18 2008-02-27 東京エレクトロン株式会社 終点検出方法
KR100325613B1 (ko) 1999-08-25 2002-02-25 황인길 플라즈마 식각 공정에서의 식각 정지점 설정 방법
JP3841024B2 (ja) * 2002-06-13 2006-11-01 株式会社日立製作所 立体形状測定装置及びエッチングの条件出し方法
JP2004342632A (ja) * 2003-05-13 2004-12-02 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
KR100578135B1 (ko) 2003-12-19 2006-05-10 삼성전자주식회사 식각 중단점을 결정하는 방법
JP2007214218A (ja) * 2006-02-08 2007-08-23 Hitachi High-Technologies Corp 真空処理装置
JP5192850B2 (ja) 2008-02-27 2013-05-08 株式会社日立ハイテクノロジーズ エッチング終点判定方法

Also Published As

Publication number Publication date
US8784677B2 (en) 2014-07-22
KR20120010073A (ko) 2012-02-02
TWI431685B (zh) 2014-03-21
US20120018094A1 (en) 2012-01-26
KR101274526B1 (ko) 2013-06-13
TW201205667A (en) 2012-02-01
JP2012028357A (ja) 2012-02-09

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