JP2012028357A5 - - Google Patents
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- Publication number
- JP2012028357A5 JP2012028357A5 JP2010162410A JP2010162410A JP2012028357A5 JP 2012028357 A5 JP2012028357 A5 JP 2012028357A5 JP 2010162410 A JP2010162410 A JP 2010162410A JP 2010162410 A JP2010162410 A JP 2010162410A JP 2012028357 A5 JP2012028357 A5 JP 2012028357A5
- Authority
- JP
- Japan
- Prior art keywords
- processing
- film structure
- plasma
- wafer
- wafers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 235000012431 wafers Nutrition 0.000 claims description 19
- 238000005530 etching Methods 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 238000003672 processing method Methods 0.000 claims description 3
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010162410A JP5675195B2 (ja) | 2010-07-20 | 2010-07-20 | プラズマ処理装置及びプラズマ処理方法 |
| TW099125919A TWI431685B (zh) | 2010-07-20 | 2010-08-04 | Plasma processing device and plasma processing method |
| KR1020100075580A KR101274526B1 (ko) | 2010-07-20 | 2010-08-05 | 플라즈마처리장치 및 플라즈마처리방법 |
| US12/856,725 US8784677B2 (en) | 2010-07-20 | 2010-08-16 | Plasma processing apparatus and plasma processing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010162410A JP5675195B2 (ja) | 2010-07-20 | 2010-07-20 | プラズマ処理装置及びプラズマ処理方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012028357A JP2012028357A (ja) | 2012-02-09 |
| JP2012028357A5 true JP2012028357A5 (https=) | 2013-08-29 |
| JP5675195B2 JP5675195B2 (ja) | 2015-02-25 |
Family
ID=45492593
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010162410A Active JP5675195B2 (ja) | 2010-07-20 | 2010-07-20 | プラズマ処理装置及びプラズマ処理方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8784677B2 (https=) |
| JP (1) | JP5675195B2 (https=) |
| KR (1) | KR101274526B1 (https=) |
| TW (1) | TWI431685B (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6549917B2 (ja) * | 2015-06-26 | 2019-07-24 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびそのデータ解析装置 |
| WO2024100849A1 (ja) | 2022-11-10 | 2024-05-16 | 株式会社日立ハイテク | エージング条件の評価装置及び設定方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4051470B2 (ja) * | 1999-05-18 | 2008-02-27 | 東京エレクトロン株式会社 | 終点検出方法 |
| KR100325613B1 (ko) | 1999-08-25 | 2002-02-25 | 황인길 | 플라즈마 식각 공정에서의 식각 정지점 설정 방법 |
| JP3841024B2 (ja) * | 2002-06-13 | 2006-11-01 | 株式会社日立製作所 | 立体形状測定装置及びエッチングの条件出し方法 |
| JP2004342632A (ja) * | 2003-05-13 | 2004-12-02 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
| KR100578135B1 (ko) | 2003-12-19 | 2006-05-10 | 삼성전자주식회사 | 식각 중단점을 결정하는 방법 |
| JP2007214218A (ja) * | 2006-02-08 | 2007-08-23 | Hitachi High-Technologies Corp | 真空処理装置 |
| JP5192850B2 (ja) | 2008-02-27 | 2013-05-08 | 株式会社日立ハイテクノロジーズ | エッチング終点判定方法 |
-
2010
- 2010-07-20 JP JP2010162410A patent/JP5675195B2/ja active Active
- 2010-08-04 TW TW099125919A patent/TWI431685B/zh active
- 2010-08-05 KR KR1020100075580A patent/KR101274526B1/ko active Active
- 2010-08-16 US US12/856,725 patent/US8784677B2/en active Active
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