KR101274526B1 - 플라즈마처리장치 및 플라즈마처리방법 - Google Patents

플라즈마처리장치 및 플라즈마처리방법 Download PDF

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Publication number
KR101274526B1
KR101274526B1 KR1020100075580A KR20100075580A KR101274526B1 KR 101274526 B1 KR101274526 B1 KR 101274526B1 KR 1020100075580 A KR1020100075580 A KR 1020100075580A KR 20100075580 A KR20100075580 A KR 20100075580A KR 101274526 B1 KR101274526 B1 KR 101274526B1
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South Korea
Prior art keywords
processing
film
plasma
etching
time
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KR1020100075580A
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Korean (ko)
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KR20120010073A (ko
Inventor
다이스케 시라이시
아키라 가고시마
사토미 이노우에
시게루 나카모토
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가부시키가이샤 히다치 하이테크놀로지즈
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Publication of KR20120010073A publication Critical patent/KR20120010073A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H10P50/285—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means of materials not containing Si, e.g. PZT or Al2O3

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
KR1020100075580A 2010-07-20 2010-08-05 플라즈마처리장치 및 플라즈마처리방법 Active KR101274526B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010162410A JP5675195B2 (ja) 2010-07-20 2010-07-20 プラズマ処理装置及びプラズマ処理方法
JPJP-P-2010-162410 2010-07-20

Publications (2)

Publication Number Publication Date
KR20120010073A KR20120010073A (ko) 2012-02-02
KR101274526B1 true KR101274526B1 (ko) 2013-06-13

Family

ID=45492593

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020100075580A Active KR101274526B1 (ko) 2010-07-20 2010-08-05 플라즈마처리장치 및 플라즈마처리방법

Country Status (4)

Country Link
US (1) US8784677B2 (https=)
JP (1) JP5675195B2 (https=)
KR (1) KR101274526B1 (https=)
TW (1) TWI431685B (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6549917B2 (ja) * 2015-06-26 2019-07-24 株式会社日立ハイテクノロジーズ プラズマ処理装置およびそのデータ解析装置
WO2024100849A1 (ja) 2022-11-10 2024-05-16 株式会社日立ハイテク エージング条件の評価装置及び設定方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010112490A (ko) * 1999-05-18 2001-12-20 히가시 데쓰로 에칭 종점 검출 방법
KR100325613B1 (ko) 1999-08-25 2002-02-25 황인길 플라즈마 식각 공정에서의 식각 정지점 설정 방법
KR100578135B1 (ko) 2003-12-19 2006-05-10 삼성전자주식회사 식각 중단점을 결정하는 방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3841024B2 (ja) * 2002-06-13 2006-11-01 株式会社日立製作所 立体形状測定装置及びエッチングの条件出し方法
JP2004342632A (ja) * 2003-05-13 2004-12-02 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JP2007214218A (ja) * 2006-02-08 2007-08-23 Hitachi High-Technologies Corp 真空処理装置
JP5192850B2 (ja) 2008-02-27 2013-05-08 株式会社日立ハイテクノロジーズ エッチング終点判定方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010112490A (ko) * 1999-05-18 2001-12-20 히가시 데쓰로 에칭 종점 검출 방법
KR100325613B1 (ko) 1999-08-25 2002-02-25 황인길 플라즈마 식각 공정에서의 식각 정지점 설정 방법
KR100578135B1 (ko) 2003-12-19 2006-05-10 삼성전자주식회사 식각 중단점을 결정하는 방법

Also Published As

Publication number Publication date
US8784677B2 (en) 2014-07-22
KR20120010073A (ko) 2012-02-02
TWI431685B (zh) 2014-03-21
US20120018094A1 (en) 2012-01-26
JP5675195B2 (ja) 2015-02-25
TW201205667A (en) 2012-02-01
JP2012028357A (ja) 2012-02-09

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