JP5675195B2 - プラズマ処理装置及びプラズマ処理方法 - Google Patents

プラズマ処理装置及びプラズマ処理方法 Download PDF

Info

Publication number
JP5675195B2
JP5675195B2 JP2010162410A JP2010162410A JP5675195B2 JP 5675195 B2 JP5675195 B2 JP 5675195B2 JP 2010162410 A JP2010162410 A JP 2010162410A JP 2010162410 A JP2010162410 A JP 2010162410A JP 5675195 B2 JP5675195 B2 JP 5675195B2
Authority
JP
Japan
Prior art keywords
processing
film
plasma
etching
processed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2010162410A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012028357A5 (enExample
JP2012028357A (ja
Inventor
白石　大輔
大輔 白石
鹿子嶋　昭
昭 鹿子嶋
智己 井上
智己 井上
茂 中元
茂 中元
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High-Tech Corp
Original Assignee
Hitachi High Technologies Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Technologies Corp filed Critical Hitachi High Technologies Corp
Priority to JP2010162410A priority Critical patent/JP5675195B2/ja
Priority to TW099125919A priority patent/TWI431685B/zh
Priority to KR1020100075580A priority patent/KR101274526B1/ko
Priority to US12/856,725 priority patent/US8784677B2/en
Publication of JP2012028357A publication Critical patent/JP2012028357A/ja
Publication of JP2012028357A5 publication Critical patent/JP2012028357A5/ja
Application granted granted Critical
Publication of JP5675195B2 publication Critical patent/JP5675195B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H10P50/285—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means of materials not containing Si, e.g. PZT or Al2O3

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
JP2010162410A 2010-07-20 2010-07-20 プラズマ処理装置及びプラズマ処理方法 Active JP5675195B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2010162410A JP5675195B2 (ja) 2010-07-20 2010-07-20 プラズマ処理装置及びプラズマ処理方法
TW099125919A TWI431685B (zh) 2010-07-20 2010-08-04 Plasma processing device and plasma processing method
KR1020100075580A KR101274526B1 (ko) 2010-07-20 2010-08-05 플라즈마처리장치 및 플라즈마처리방법
US12/856,725 US8784677B2 (en) 2010-07-20 2010-08-16 Plasma processing apparatus and plasma processing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010162410A JP5675195B2 (ja) 2010-07-20 2010-07-20 プラズマ処理装置及びプラズマ処理方法

Publications (3)

Publication Number Publication Date
JP2012028357A JP2012028357A (ja) 2012-02-09
JP2012028357A5 JP2012028357A5 (enExample) 2013-08-29
JP5675195B2 true JP5675195B2 (ja) 2015-02-25

Family

ID=45492593

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010162410A Active JP5675195B2 (ja) 2010-07-20 2010-07-20 プラズマ処理装置及びプラズマ処理方法

Country Status (4)

Country Link
US (1) US8784677B2 (enExample)
JP (1) JP5675195B2 (enExample)
KR (1) KR101274526B1 (enExample)
TW (1) TWI431685B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6549917B2 (ja) * 2015-06-26 2019-07-24 株式会社日立ハイテクノロジーズ プラズマ処理装置およびそのデータ解析装置
KR102946724B1 (ko) 2022-11-10 2026-04-02 주식회사 히타치하이테크 에이징 조건의 평가 장치 및 설정 방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4051470B2 (ja) * 1999-05-18 2008-02-27 東京エレクトロン株式会社 終点検出方法
KR100325613B1 (ko) 1999-08-25 2002-02-25 황인길 플라즈마 식각 공정에서의 식각 정지점 설정 방법
JP3841024B2 (ja) * 2002-06-13 2006-11-01 株式会社日立製作所 立体形状測定装置及びエッチングの条件出し方法
JP2004342632A (ja) * 2003-05-13 2004-12-02 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
KR100578135B1 (ko) 2003-12-19 2006-05-10 삼성전자주식회사 식각 중단점을 결정하는 방법
JP2007214218A (ja) * 2006-02-08 2007-08-23 Hitachi High-Technologies Corp 真空処理装置
JP5192850B2 (ja) 2008-02-27 2013-05-08 株式会社日立ハイテクノロジーズ エッチング終点判定方法

Also Published As

Publication number Publication date
US8784677B2 (en) 2014-07-22
TWI431685B (zh) 2014-03-21
KR20120010073A (ko) 2012-02-02
JP2012028357A (ja) 2012-02-09
TW201205667A (en) 2012-02-01
KR101274526B1 (ko) 2013-06-13
US20120018094A1 (en) 2012-01-26

Similar Documents

Publication Publication Date Title
US6916396B2 (en) Etching system and etching method
US10665516B2 (en) Etching method and plasma processing apparatus
KR101408456B1 (ko) 다중-구역 종료점 검출기
CN109937471B (zh) 选择性蚀刻速率监控器
JP3799314B2 (ja) エッチング処理装置およびエッチング処理方法
JP5014166B2 (ja) プラズマ処理方法およびプラズマ処理装置
US20140295583A1 (en) Plasma processing apparatus and plasma processing method
JP7110492B2 (ja) プラズマ処理装置およびプラズマ処理方法
JP2010199126A (ja) プラズマ処理方法およびプラズマ処理装置
US20060040415A1 (en) Method and apparatus for nitride spacer etch process implementing in situ interferometry endpoint detection and non-interferometry endpoint monitoring
US10153217B2 (en) Plasma processing apparatus and plasma processing method
JP4068986B2 (ja) 試料のドライエッチング方法及びドライエッチング装置
JP2012028357A (ja) プラズマ処理装置及びプラズマ処理方法
JP2001007084A (ja) エッチング終点判定方法
US7122096B2 (en) Method and apparatus for processing semiconductor
JP4324545B2 (ja) エッチング処理装置及び処理方法
JP3946467B2 (ja) ドライエッチング方法
JP2002270589A (ja) エッチング方法
JP3784374B2 (ja) エッチング方法
JP2004152873A (ja) ドライエッチング装置の異常検出方法及び装置
KR20070069898A (ko) 반도체 장치 제조를 위한 식각 방법

Legal Events

Date Code Title Description
RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20120517

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130701

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20130701

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130701

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20140513

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140520

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140717

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20141125

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20141224

R150 Certificate of patent or registration of utility model

Ref document number: 5675195

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350