JP5673694B2 - ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池セルの製造方法 - Google Patents

ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池セルの製造方法 Download PDF

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Publication number
JP5673694B2
JP5673694B2 JP2012557935A JP2012557935A JP5673694B2 JP 5673694 B2 JP5673694 B2 JP 5673694B2 JP 2012557935 A JP2012557935 A JP 2012557935A JP 2012557935 A JP2012557935 A JP 2012557935A JP 5673694 B2 JP5673694 B2 JP 5673694B2
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Prior art keywords
type diffusion
diffusion layer
forming composition
layer forming
glass
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Expired - Fee Related
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JP2012557935A
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Japanese (ja)
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JPWO2012111575A1 (ja
Inventor
洋一 町井
洋一 町井
吉田　誠人
誠人 吉田
野尻　剛
剛 野尻
香 岡庭
香 岡庭
岩室　光則
光則 岩室
修一郎 足立
修一郎 足立
鉄也 佐藤
鉄也 佐藤
木沢　桂子
桂子 木沢
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Showa Denko Materials Co Ltd
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Hitachi Chemical Co Ltd
Showa Denko Materials Co Ltd
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Priority to JP2012557935A priority Critical patent/JP5673694B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2225—Diffusion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Development (AREA)
  • Photovoltaic Devices (AREA)
  • Glass Compositions (AREA)
JP2012557935A 2011-02-17 2012-02-10 ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池セルの製造方法 Expired - Fee Related JP5673694B2 (ja)

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JP2012557935A JP5673694B2 (ja) 2011-02-17 2012-02-10 ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池セルの製造方法

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JP2011032430 2011-02-17
JP2011032430 2011-02-17
JP2012557935A JP5673694B2 (ja) 2011-02-17 2012-02-10 ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池セルの製造方法
PCT/JP2012/053182 WO2012111575A1 (ja) 2011-02-17 2012-02-10 ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池セルの製造方法

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JP2014220674A Pending JP2015053505A (ja) 2011-02-17 2014-10-29 ｎ型拡散層形成組成物、ｎ型拡散層の製造方法、及び太陽電池セルの製造方法

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JP (2) JP5673694B2 (zh)
KR (1) KR20140041423A (zh)
CN (1) CN103348449A (zh)
TW (2) TW201530791A (zh)
WO (1) WO2012111575A1 (zh)

Families Citing this family (1)

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JP6582747B2 (ja) * 2015-08-28 2019-10-02 日立化成株式会社 ｎ型拡散層形成用組成物、ｎ型拡散層を有する半導体基板の製造方法、及び太陽電池セルの製造方法

Citations (6)

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JPS63307719A (ja) * 1987-05-29 1988-12-15 オーエンス−イリノイ・テレビジヨン・プロダクツ・インコーポレーテツド 低温適用のための燐のプラナードーパントソース
JP2002539615A (ja) * 1999-03-11 2002-11-19 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフトング 半導体にｐ、ｐ＋およびｎ、ｎ＋領域を形成するためのドーパント・ペースト
WO2009060761A1 (ja) * 2007-11-09 2009-05-14 Nippon Electric Glass Co., Ltd. ドーパントホストおよびその製造方法
JP2009200276A (ja) * 2008-02-22 2009-09-03 Tokyo Ohka Kogyo Co Ltd 電極形成用導電性組成物及び太陽電池の形成方法
WO2010147160A1 (ja) * 2009-06-17 2010-12-23 旭硝子株式会社 電極形成用ガラスフリット、およびこれを用いた電極形成用導電ペースト、太陽電池
JP2010541282A (ja) * 2007-10-05 2010-12-24 サンパワー コーポレイション 太陽電池の製造に用いられるドーパント材料

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NL99619C (zh) * 1955-06-28
US4891331A (en) * 1988-01-21 1990-01-02 Oi-Neg Tv Products, Inc. Method for doping silicon wafers using Al2 O3 /P2 O5 composition
JPH08167658A (ja) * 1994-12-15 1996-06-25 Hitachi Ltd 半導体装置およびその製造方法
CN103333526A (zh) * 2007-01-03 2013-10-02 内诺格雷姆公司 基于硅/锗的纳米颗粒油墨、掺杂型颗粒、用于半导体应用的印刷和方法
CN101139169A (zh) * 2007-08-09 2008-03-12 东华大学 作为磷扩散源的微晶玻璃及其制备方法
CN101814535A (zh) * 2009-02-19 2010-08-25 上海交大泰阳绿色能源有限公司 一种选择性发射极晶体硅太阳能电池用浆料及其制备方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63307719A (ja) * 1987-05-29 1988-12-15 オーエンス−イリノイ・テレビジヨン・プロダクツ・インコーポレーテツド 低温適用のための燐のプラナードーパントソース
JP2002539615A (ja) * 1999-03-11 2002-11-19 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフトング 半導体にｐ、ｐ＋およびｎ、ｎ＋領域を形成するためのドーパント・ペースト
JP2010541282A (ja) * 2007-10-05 2010-12-24 サンパワー コーポレイション 太陽電池の製造に用いられるドーパント材料
WO2009060761A1 (ja) * 2007-11-09 2009-05-14 Nippon Electric Glass Co., Ltd. ドーパントホストおよびその製造方法
JP2009200276A (ja) * 2008-02-22 2009-09-03 Tokyo Ohka Kogyo Co Ltd 電極形成用導電性組成物及び太陽電池の形成方法
WO2010147160A1 (ja) * 2009-06-17 2010-12-23 旭硝子株式会社 電極形成用ガラスフリット、およびこれを用いた電極形成用導電ペースト、太陽電池

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JPWO2012111575A1 (ja) 2014-07-07
CN103348449A (zh) 2013-10-09
TW201251036A (en) 2012-12-16
WO2012111575A1 (ja) 2012-08-23
TW201530791A (zh) 2015-08-01
KR20140041423A (ko) 2014-04-04
JP2015053505A (ja) 2015-03-19

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