JP5671305B2 - マスクブランク用基板の製造方法、マスクブランクの製造方法および転写用マスクの製造方法 - Google Patents
マスクブランク用基板の製造方法、マスクブランクの製造方法および転写用マスクの製造方法 Download PDFInfo
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- JP5671305B2 JP5671305B2 JP2010250246A JP2010250246A JP5671305B2 JP 5671305 B2 JP5671305 B2 JP 5671305B2 JP 2010250246 A JP2010250246 A JP 2010250246A JP 2010250246 A JP2010250246 A JP 2010250246A JP 5671305 B2 JP5671305 B2 JP 5671305B2
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- Prior art keywords
- substrate
- polishing
- mask blank
- manufacturing
- polishing pad
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 title claims description 248
- 238000004519 manufacturing process Methods 0.000 title claims description 74
- 238000012546 transfer Methods 0.000 title claims description 29
- 238000005498 polishing Methods 0.000 claims description 247
- 229920005989 resin Polymers 0.000 claims description 73
- 239000011347 resin Substances 0.000 claims description 73
- 239000010408 film Substances 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 32
- 239000000463 material Substances 0.000 claims description 27
- 239000011521 glass Substances 0.000 claims description 22
- 239000006061 abrasive grain Substances 0.000 claims description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 239000007788 liquid Substances 0.000 claims description 16
- 239000011148 porous material Substances 0.000 claims description 10
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 9
- 239000004745 nonwoven fabric Substances 0.000 claims description 9
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 9
- 239000008119 colloidal silica Substances 0.000 claims description 8
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 8
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 8
- 239000010409 thin film Substances 0.000 claims description 6
- 229920005668 polycarbonate resin Polymers 0.000 claims description 5
- 239000004431 polycarbonate resin Substances 0.000 claims description 5
- 229920000515 polycarbonate Polymers 0.000 claims description 4
- 239000004417 polycarbonate Substances 0.000 claims description 4
- -1 polyethylene terephthalate Polymers 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 107
- 238000007517 polishing process Methods 0.000 description 30
- 230000007547 defect Effects 0.000 description 28
- 230000000052 comparative effect Effects 0.000 description 22
- 238000009826 distribution Methods 0.000 description 10
- 230000002093 peripheral effect Effects 0.000 description 10
- 238000012545 processing Methods 0.000 description 9
- 239000002245 particle Substances 0.000 description 8
- 238000000227 grinding Methods 0.000 description 7
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 6
- 229920005749 polyurethane resin Polymers 0.000 description 6
- 239000004721 Polyphenylene oxide Substances 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 229920000570 polyether Polymers 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000006260 foam Substances 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 229920002635 polyurethane Polymers 0.000 description 4
- 239000004814 polyurethane Substances 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- 238000012795 verification Methods 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000006096 absorbing agent Substances 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 230000006835 compression Effects 0.000 description 3
- 238000007906 compression Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 229920000728 polyester Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 238000005187 foaming Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229920001225 polyester resin Polymers 0.000 description 2
- 239000004645 polyester resin Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 239000000057 synthetic resin Substances 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 239000005354 aluminosilicate glass Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 150000002009 diols Chemical class 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 150000003077 polyols Chemical class 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000013518 transcription Methods 0.000 description 1
- 230000035897 transcription Effects 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
- 229910000500 β-quartz Inorganic materials 0.000 description 1
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Surface Treatment Of Glass (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010250246A JP5671305B2 (ja) | 2010-11-08 | 2010-11-08 | マスクブランク用基板の製造方法、マスクブランクの製造方法および転写用マスクの製造方法 |
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JP2010250246A JP5671305B2 (ja) | 2010-11-08 | 2010-11-08 | マスクブランク用基板の製造方法、マスクブランクの製造方法および転写用マスクの製造方法 |
Publications (3)
Publication Number | Publication Date |
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JP2012101959A JP2012101959A (ja) | 2012-05-31 |
JP2012101959A5 JP2012101959A5 (enrdf_load_stackoverflow) | 2013-12-12 |
JP5671305B2 true JP5671305B2 (ja) | 2015-02-18 |
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JP2010250246A Active JP5671305B2 (ja) | 2010-11-08 | 2010-11-08 | マスクブランク用基板の製造方法、マスクブランクの製造方法および転写用マスクの製造方法 |
Country Status (1)
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JP (1) | JP5671305B2 (enrdf_load_stackoverflow) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6206831B2 (ja) * | 2013-03-29 | 2017-10-04 | Hoya株式会社 | Euvリソグラフィー用マスクブランク用基板の製造方法、euvリソグラフィー用多層反射膜付き基板の製造方法、euvリソグラフィー用マスクブランクの製造方法、及びeuvリソグラフィー用転写マスクの製造方法 |
JP7057215B2 (ja) * | 2018-05-18 | 2022-04-19 | 帝人フロンティア株式会社 | 研磨パッドおよびその製造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2004141984A (ja) * | 2002-10-22 | 2004-05-20 | Hoya Corp | マスクブランクス用基板の製造方法 |
JP2004303280A (ja) * | 2003-03-28 | 2004-10-28 | Hoya Corp | 情報記録媒体用ガラス基板の製造方法 |
JP4190398B2 (ja) * | 2003-11-19 | 2008-12-03 | Hoya株式会社 | 磁気ディスク用ガラス基板の製造方法及び磁気ディスクの製造方法 |
JP5091417B2 (ja) * | 2006-03-30 | 2012-12-05 | 富士紡ホールディングス株式会社 | 研磨布 |
JP2010086597A (ja) * | 2008-09-30 | 2010-04-15 | Hoya Corp | 磁気ディスク用ガラス基板の製造方法及び磁気ディスクの製造方法 |
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