JP5667368B2 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
JP5667368B2
JP5667368B2 JP2010039386A JP2010039386A JP5667368B2 JP 5667368 B2 JP5667368 B2 JP 5667368B2 JP 2010039386 A JP2010039386 A JP 2010039386A JP 2010039386 A JP2010039386 A JP 2010039386A JP 5667368 B2 JP5667368 B2 JP 5667368B2
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Japan
Prior art keywords
plasma
cavity
circular waveguide
plasma processing
electric field
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Expired - Fee Related
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JP2010039386A
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Japanese (ja)
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JP2011176147A (ja
JP2011176147A5 (enExample
Inventor
田村　仁
仁 田村
僚一 磯村
僚一 磯村
真一 磯崎
真一 磯崎
崇 植村
崇 植村
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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Priority to JP2010039386A priority Critical patent/JP5667368B2/ja
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  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
JP2010039386A 2010-02-24 2010-02-24 プラズマ処理装置 Expired - Fee Related JP5667368B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010039386A JP5667368B2 (ja) 2010-02-24 2010-02-24 プラズマ処理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010039386A JP5667368B2 (ja) 2010-02-24 2010-02-24 プラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2011176147A JP2011176147A (ja) 2011-09-08
JP2011176147A5 JP2011176147A5 (enExample) 2013-04-04
JP5667368B2 true JP5667368B2 (ja) 2015-02-12

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ID=44688746

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JP2010039386A Expired - Fee Related JP5667368B2 (ja) 2010-02-24 2010-02-24 プラズマ処理装置

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JP (1) JP5667368B2 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7074795B2 (ja) * 2020-04-21 2022-05-24 宏碩系統股▲フン▼有限公司 合成ダイヤモンドの製造装置及びこれに用いられるマイクロ波発射モジュール

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0567586A (ja) * 1991-09-09 1993-03-19 Nec Corp Ｅｃｒプラズマエツチング装置
JPH0673567A (ja) * 1992-08-28 1994-03-15 Hitachi Ltd マイクロ波プラズマ処理装置
JPH07263187A (ja) * 1994-03-18 1995-10-13 Hitachi Ltd プラズマ処理装置

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JP2011176147A (ja) 2011-09-08

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