JP5666715B2 - オプトエレクトロニクス半導体チップおよびその製造方法 - Google Patents
オプトエレクトロニクス半導体チップおよびその製造方法 Download PDFInfo
- Publication number
- JP5666715B2 JP5666715B2 JP2013538131A JP2013538131A JP5666715B2 JP 5666715 B2 JP5666715 B2 JP 5666715B2 JP 2013538131 A JP2013538131 A JP 2013538131A JP 2013538131 A JP2013538131 A JP 2013538131A JP 5666715 B2 JP5666715 B2 JP 5666715B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- nanostructured
- layer
- semiconductor chip
- conversion layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 218
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 230000005693 optoelectronics Effects 0.000 title claims description 9
- 238000006243 chemical reaction Methods 0.000 claims description 166
- 230000005855 radiation Effects 0.000 claims description 74
- 239000002073 nanorod Substances 0.000 claims description 58
- 239000000463 material Substances 0.000 claims description 41
- 239000000758 substrate Substances 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 23
- 239000011159 matrix material Substances 0.000 claims description 22
- 239000002245 particle Substances 0.000 claims description 13
- 229920001296 polysiloxane Polymers 0.000 claims description 5
- 230000002093 peripheral effect Effects 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims 1
- 238000011161 development Methods 0.000 description 6
- 230000018109 developmental process Effects 0.000 description 6
- 230000035515 penetration Effects 0.000 description 6
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 238000004549 pulsed laser deposition Methods 0.000 description 5
- 238000000605 extraction Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 229910010413 TiO 2 Inorganic materials 0.000 description 3
- 230000003993 interaction Effects 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000002648 laminated material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 239000013464 silicone adhesive Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Description
成長基板を形成するステップと、
活性層および放射放出面を備える半導体積層体を、成長基板上に成長させるステップと、
放射放出面に第1のナノ構造化部を形成するステップと、
第1のナノ構造化部に変換層を導入するステップと、
を含んでいる。
成長基板の表面全体の上に、半導体積層体の第1の層を成長させるステップと、
半導体積層体の、構造化された第2の層を、マスク層によって成長させるステップと、
を含んでいる。
Claims (16)
- オプトエレクトロニクス半導体チップ(10)であって、
放射を生成する目的で設けられる活性層(2a)と、放射放出面(21)とを有する半導体積層体(2)と、
前記半導体積層体(2)の前記放射放出面(21)に配置されている変換層(3)と、
を備えており、
前記変換層(3)が、前記活性層(2a)によって放出される放射の少なくとも一部分を異なる波長の放射に変換するのに適しており、
前記半導体積層体(2)の前記放射放出面(21)が第1のナノ構造化部(4)を有し、
前記変換層(3)が、前記第1のナノ構造化部(4)の上面には前記変換層(3)が存在せず、かつ、前記第1のナノ構造化部(4)が前記変換層(3)で完全に充填されるように、前記第1のナノ構造化部(4)に配置され、
前記第1のナノ構造化部(4)が複数のナノロッドおよび凹部からなり、
前記活性層(2a)が、前記第1のナノ構造化部(4)の上面に前記活性層(2a)が存在しないように、前記第1のナノ構造化部(4)の側面および底面に沿って配置されている、
オプトエレクトロニクス半導体チップ(10)。 - 前記半導体積層体(2)とは反対側の前記変換層(3)の面と、前記半導体積層体(2)の前記放射放出面(21)とが互いにシームレスに結合されるように、前記変換層(3)と前記半導体積層体(2)との組み合わせは、平面状に形成されており、
前記活性層(2a)は、横断面で見たときに長方形の鋸歯パターン状に形成されている、
請求項1に記載の半導体チップ(10)。 - 前記第1のナノ構造化部(4)が複数のナノロッドとして形成され、
前記ナノロッドは、10nm〜200nmの範囲内の直径を有する、円形または長方形のGaN柱であり、
前記半導体積層体(2)は、In x Ga y Al 1−x−y N(0≦x、y≦1、x+y≦1)材料系から作られている、
請求項1または請求項2のいずれかに記載の半導体チップ(10)。 - 前記変換層(3)の材料の屈折率は、前記半導体積層体(2)の材料の屈折率より大きい、
請求項1から請求項3のいずれかに記載の半導体チップ(10)。 - 前記変換層(3)が、複数のナノロッドを備えた第2のナノ構造化部(5)として形成されている、
請求項1から請求項4のいずれかに記載の半導体チップ(10)。 - 前記第1のナノ構造化部(4)と前記第2のナノ構造化部(5)が、互いに係合するように、互いに配置され、
前記第1のナノ構造化部(4)と前記第2のナノ構造化部(5)が横断面で見たときに櫛状に形成されている、
請求項5に記載の半導体チップ(10)。 - 前記活性層(2a)は、連続的な層によってではなく、半円柱または半円錐台の周囲面の形を有する個別の個々の領域によって形成されている、
請求項5または6に記載の半導体チップ(10)。 - 前記第2のナノ構造化部(5)は、横方向の一連の層として、または高屈折率の材料に埋め込まれた変換粒子として、または埋め込まれた高屈折率の変換粒子として、形成され、
前記半導体チップ(10)は、GaN系半導体チップであり、高屈折率材料である、
請求項5から請求項7のいずれかに記載の半導体チップ(10)。 - 前記第1のナノ構造化部(4)および前記第2のナノ構造化部(5)が、それぞれ、100nm〜1μmの範囲内(両端値を含む)の高さを有し、
シリコーン層であるカバー層(8)が、前記半導体チップ(10)の前記放射放出面(21)の下流に配置される、
請求項1から請求項8のいずれかに記載の半導体チップ(10)。 - 前記半導体積層体(2)の前記活性層(2a)が、部分的に、前記第1のナノ構造化部(4)の領域に形成されている、
請求項1から請求項9のいずれかに記載の半導体チップ(10)。 - 前記変換層(3)および前記半導体積層体(2)が、光学的および熱的に結合されている、
請求項1から請求項10のいずれかに記載の半導体チップ(10)。 - 前記半導体チップ(10)は、上に前記半導体積層体(2)をエピタキシャル成長させた成長基板が存在しない薄膜チップであり、
前記半導体チップ(10)は、前記半導体積層体(2)を機械的に安定させるため、キャリア基板を有する、
請求項1から請求項11のいずれかに記載の半導体チップ(10)。 - 請求項1から請求項12のいずれかに記載の半導体チップ(10)を製造する方法であって、
成長基板(1)を形成するステップと、
活性層(2a)および放射放出面(21)を備える半導体積層体(2)を、前記成長基板(1)の上に成長させるステップと、
前記放射放出面(21)に第1のナノ構造化部(4)を形成するステップと、
前記第1のナノ構造化部(4)に変換層(3)を導入するステップと、
を含んでいる、方法。 - 前記半導体積層体(2)を成長させる前記ステップと、前記第1のナノ構造化部(4)を形成する前記ステップとが、
前記成長基板(1)の表面全体の上に、前記半導体積層体(2)の第1の層(2b)を成長させるステップと、
前記半導体積層体(2)の、構造化された第2の層(2c)を、マスク層によって成長させるステップと、
を含んでいる、請求項13に記載の方法。 - 前記半導体積層体(2)を成長させる前記ステップと、前記第1のナノ構造化部(4)を形成する前記ステップとが、
前記成長基板(1)の表面全体の上に、前記半導体積層体(2)を成長させるステップと、
凹部(6)を形成することによって前記半導体積層体(2)を後から構造化させるステップと、
を含んでいる、請求項13に記載の方法。 - 前記変換層(3)を導入するステップが、
前記第1のナノ構造化部(4)に変換要素(3b)を導入し、次いで、前記第1のナノ構造化部(4)にマトリックス材料(3c)を加えるステップ、または、
前記変換層(3)をレーザ蒸着手順によって形成するステップ、またはその両方を含んでいる、請求項13から請求項15のいずれかに記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102010051286A DE102010051286A1 (de) | 2010-11-12 | 2010-11-12 | Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung |
DE102010051286.9 | 2010-11-12 | ||
PCT/EP2011/069247 WO2012062635A1 (de) | 2010-11-12 | 2011-11-02 | Optoelektronischer halbleiterchip und verfahren zu dessen herstellung |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013542616A JP2013542616A (ja) | 2013-11-21 |
JP5666715B2 true JP5666715B2 (ja) | 2015-02-12 |
Family
ID=44897781
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013538131A Active JP5666715B2 (ja) | 2010-11-12 | 2011-11-02 | オプトエレクトロニクス半導体チップおよびその製造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8969900B2 (ja) |
EP (1) | EP2638575B1 (ja) |
JP (1) | JP5666715B2 (ja) |
KR (1) | KR101468348B1 (ja) |
CN (1) | CN103190003B (ja) |
DE (1) | DE102010051286A1 (ja) |
WO (1) | WO2012062635A1 (ja) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014020954A1 (ja) * | 2012-07-31 | 2014-02-06 | 日本電気株式会社 | 光学素子、照明装置、画像表示装置、光学素子の作動方法 |
US8772814B2 (en) * | 2012-10-26 | 2014-07-08 | Nthdegree Technologies Worldwide Inc. | Phosphor layer containing transparent particles over blue LED |
DE102013100291B4 (de) | 2013-01-11 | 2021-08-05 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterchip |
DE102013200509A1 (de) * | 2013-01-15 | 2014-07-17 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
DE102013114466A1 (de) | 2013-12-19 | 2015-06-25 | Osram Gmbh | Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils |
DE102014117892A1 (de) * | 2014-12-04 | 2016-06-09 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement sowie optoelektronisches Bauteil |
CN105280774A (zh) * | 2015-09-18 | 2016-01-27 | 华灿光电(苏州)有限公司 | 一种白光发光二极管及其制作方法 |
EP3188260B1 (en) * | 2015-12-31 | 2020-02-12 | Dow Global Technologies Llc | Nanostructure material structures and methods |
WO2017174416A1 (en) * | 2016-04-05 | 2017-10-12 | Philips Lighting Holding B.V. | Light converting device having a wavelength converting layer with a hydrophobic nanostructure |
US10451751B2 (en) * | 2017-06-19 | 2019-10-22 | Ohio State Innovation Foundation | Charge generating devices and methods of making and use thereof |
US11961875B2 (en) | 2017-12-20 | 2024-04-16 | Lumileds Llc | Monolithic segmented LED array architecture with islanded epitaxial growth |
US20190198564A1 (en) * | 2017-12-20 | 2019-06-27 | Lumileds Llc | Monolithic segmented led array architecture with islanded epitaxial growth |
DE102018124473A1 (de) * | 2018-10-04 | 2020-04-09 | Osram Opto Semiconductors Gmbh | Optoelektronisches bauteil, verfahren zur ansteuerung eines optoelektronischen bauteils und beleuchtungsvorrichtung |
US11637219B2 (en) | 2019-04-12 | 2023-04-25 | Google Llc | Monolithic integration of different light emitting structures on a same substrate |
WO2020229013A1 (de) * | 2019-05-13 | 2020-11-19 | Osram Opto Semiconductors Gmbh | Multi-chip trägerstruktur |
DE102019121678A1 (de) * | 2019-08-12 | 2021-02-18 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Bauelement mit verbesserter wärmeabfuhr und verfahren zur herstellung eines bauelements |
KR20210102741A (ko) | 2020-02-12 | 2021-08-20 | 삼성전자주식회사 | 반도체 발광 소자 및 이의 제조 방법 |
US11942507B2 (en) | 2020-03-11 | 2024-03-26 | Lumileds Llc | Light emitting diode devices |
US11569415B2 (en) | 2020-03-11 | 2023-01-31 | Lumileds Llc | Light emitting diode devices with defined hard mask opening |
US11848402B2 (en) | 2020-03-11 | 2023-12-19 | Lumileds Llc | Light emitting diode devices with multilayer composite film including current spreading layer |
US11735695B2 (en) | 2020-03-11 | 2023-08-22 | Lumileds Llc | Light emitting diode devices with current spreading layer |
US11901491B2 (en) | 2020-10-29 | 2024-02-13 | Lumileds Llc | Light emitting diode devices |
US11626538B2 (en) | 2020-10-29 | 2023-04-11 | Lumileds Llc | Light emitting diode device with tunable emission |
US11705534B2 (en) | 2020-12-01 | 2023-07-18 | Lumileds Llc | Methods of making flip chip micro light emitting diodes |
US11955583B2 (en) | 2020-12-01 | 2024-04-09 | Lumileds Llc | Flip chip micro light emitting diodes |
US11600656B2 (en) | 2020-12-14 | 2023-03-07 | Lumileds Llc | Light emitting diode device |
US11935987B2 (en) | 2021-11-03 | 2024-03-19 | Lumileds Llc | Light emitting diode arrays with a light-emitting pixel area |
US20230375759A1 (en) * | 2022-05-18 | 2023-11-23 | GE Precision Healthcare LLC | Aligned and stacked high-aspect ratio metallized structures |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19638667C2 (de) * | 1996-09-20 | 2001-05-17 | Osram Opto Semiconductors Gmbh | Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement |
JP4193471B2 (ja) | 2001-12-14 | 2008-12-10 | 日亜化学工業株式会社 | 発光装置およびその製造方法 |
US6885033B2 (en) * | 2003-03-10 | 2005-04-26 | Cree, Inc. | Light emitting devices for light conversion and methods and semiconductor chips for fabricating the same |
US7511217B1 (en) * | 2003-04-19 | 2009-03-31 | Nanosolar, Inc. | Inter facial architecture for nanostructured optoelectronic devices |
US7768023B2 (en) | 2005-10-14 | 2010-08-03 | The Regents Of The University Of California | Photonic structures for efficient light extraction and conversion in multi-color light emitting devices |
US20060192225A1 (en) | 2005-02-28 | 2006-08-31 | Chua Janet B Y | Light emitting device having a layer of photonic crystals with embedded photoluminescent material and method for fabricating the device |
JP4740795B2 (ja) * | 2005-05-24 | 2011-08-03 | エルジー エレクトロニクス インコーポレイティド | ロッド型発光素子及びその製造方法 |
US8330173B2 (en) * | 2005-06-25 | 2012-12-11 | Seoul Opto Device Co., Ltd. | Nanostructure having a nitride-based quantum well and light emitting diode employing the same |
US8330348B2 (en) * | 2005-10-31 | 2012-12-11 | Osram Opto Semiconductors Gmbh | Structured luminescence conversion layer |
US7321193B2 (en) * | 2005-10-31 | 2008-01-22 | Osram Opto Semiconductors Gmbh | Device structure for OLED light device having multi element light extraction and luminescence conversion layer |
KR100746784B1 (ko) | 2006-03-02 | 2007-08-06 | 엘지전자 주식회사 | 나노선을 갖는 발광 소자 및 그의 제조 방법 |
KR100723233B1 (ko) * | 2006-03-31 | 2007-05-29 | 삼성전기주식회사 | 백색 발광 소자 |
JP4837045B2 (ja) * | 2006-10-12 | 2011-12-14 | パナソニック株式会社 | 発光装置及びその製造方法 |
KR100872281B1 (ko) * | 2006-12-15 | 2008-12-05 | 삼성전기주식회사 | 나노와이어 구조체를 이용한 반도체 발광소자 및 그제조방법 |
DE102007003785A1 (de) * | 2007-01-19 | 2008-07-24 | Merck Patent Gmbh | Emitter-converter-chip |
JPWO2009004739A1 (ja) * | 2007-06-29 | 2010-08-26 | アーベル・システムズ株式会社 | 蛍光灯型led照明装置 |
US7863635B2 (en) * | 2007-08-07 | 2011-01-04 | Cree, Inc. | Semiconductor light emitting devices with applied wavelength conversion materials |
DE102007052181A1 (de) * | 2007-09-20 | 2009-04-02 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements |
DE102008022542A1 (de) | 2008-05-07 | 2009-11-12 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Bauelement und Verfahren zu dessen Herstellung |
CN102804424A (zh) * | 2009-06-19 | 2012-11-28 | 塞伦光子学有限公司 | 发光二极管 |
US8232568B2 (en) | 2009-08-21 | 2012-07-31 | Bridgelux, Inc. | High brightness LED utilizing a roughened active layer and conformal cladding |
EP2496052A1 (en) * | 2009-10-30 | 2012-09-05 | Nec Corporation | Light emitting element, light source device, and projection display device |
-
2010
- 2010-11-12 DE DE102010051286A patent/DE102010051286A1/de not_active Withdrawn
-
2011
- 2011-11-02 KR KR1020137013281A patent/KR101468348B1/ko active IP Right Grant
- 2011-11-02 JP JP2013538131A patent/JP5666715B2/ja active Active
- 2011-11-02 US US13/883,346 patent/US8969900B2/en active Active
- 2011-11-02 CN CN201180054262.0A patent/CN103190003B/zh active Active
- 2011-11-02 WO PCT/EP2011/069247 patent/WO2012062635A1/de active Application Filing
- 2011-11-02 EP EP11776465.4A patent/EP2638575B1/de active Active
Also Published As
Publication number | Publication date |
---|---|
WO2012062635A1 (de) | 2012-05-18 |
US8969900B2 (en) | 2015-03-03 |
US20130328066A1 (en) | 2013-12-12 |
KR20130108607A (ko) | 2013-10-04 |
CN103190003B (zh) | 2016-08-10 |
DE102010051286A1 (de) | 2012-05-16 |
EP2638575A1 (de) | 2013-09-18 |
CN103190003A (zh) | 2013-07-03 |
JP2013542616A (ja) | 2013-11-21 |
KR101468348B1 (ko) | 2014-12-03 |
EP2638575B1 (de) | 2016-10-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5666715B2 (ja) | オプトエレクトロニクス半導体チップおよびその製造方法 | |
KR102222215B1 (ko) | 기판내에 산란 특징을 갖는 led | |
KR101456729B1 (ko) | 반도체칩 및 반도체칩의 제조 방법 | |
US8324647B2 (en) | Light emitting module with optically-transparent thermally-conductive element | |
TWI446593B (zh) | 光電半導體組件之製造方法及光電半導體組件 | |
CN101017869B (zh) | 氮化物基半导体发光器件及其制造方法 | |
CN106415836B (zh) | 半导体器件和照明设备 | |
CN108604626B (zh) | 具有纹理化衬底的波长转换发光设备 | |
KR102153649B1 (ko) | 발광 다이오드 부품 | |
JP2005268323A (ja) | 半導体発光装置 | |
JP2006100787A (ja) | 発光装置および発光素子 | |
KR101624750B1 (ko) | 거울층을 포함한 박막 led 및 그 제조 방법 | |
JP2011503898A (ja) | ワイヤボンディングのないウェーハ段階のled | |
CN108884973B (zh) | 半导体光源 | |
TW200807769A (en) | LED device with re-emitting semiconductor construction and optical element | |
KR20100063130A (ko) | 유리 커버를 포함한 복사 방출 소자 및 그 제조 방법 | |
KR20110069149A (ko) | 광전 반도체 몸체 | |
JP2018531517A6 (ja) | テクスチャ基板を有する波長変換式発光デバイス | |
KR20110059616A (ko) | 광추출이 향상된 인버터 led구조 | |
TW201123537A (en) | Light emitting devices with embedded void-gap structures through bonding of structured materials on active devices | |
JP4998701B2 (ja) | Iii−v族化合物半導体発光ダイオード | |
TWI290775B (en) | Lighting system with high and improved extraction efficiency | |
TW201006004A (en) | A photonic crystal equipped solid state light-emitting component |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20140319 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140415 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140715 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20141202 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20141210 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5666715 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |