JP5662452B2 - パターン化有機薄膜の堆積方法および堆積システム - Google Patents
パターン化有機薄膜の堆積方法および堆積システム Download PDFInfo
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- DHDHJYNTEFLIHY-UHFFFAOYSA-N 4,7-diphenyl-1,10-phenanthroline Chemical group C1=CC=CC=C1C1=CC=NC2=C1C=CC1=C(C=3C=CC=CC=3)C=CN=C21 DHDHJYNTEFLIHY-UHFFFAOYSA-N 0.000 description 1
- DIVZFUBWFAOMCW-UHFFFAOYSA-N 4-n-(3-methylphenyl)-1-n,1-n-bis[4-(n-(3-methylphenyl)anilino)phenyl]-4-n-phenylbenzene-1,4-diamine Chemical group CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)N(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 DIVZFUBWFAOMCW-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/228—Gas flow assisted PVD deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/548—Controlling the composition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/8593—Systems
- Y10T137/85954—Closed circulating system
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/8593—Systems
- Y10T137/87249—Multiple inlet with multiple outlet
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T137/00—Fluid handling
- Y10T137/8593—Systems
- Y10T137/877—With flow control means for branched passages
Description
420 開口
425 質量流量コントローラー
430 質量流量コントローラー
435 ソース
440 希釈バルブ
445 ソースバルブ
450 バイパスバルブ
455 冷却板
520 流路
Claims (24)
- 第一端部、第二端部、および該第一端部と第二端部との間に配置された少なくとも1つの開口を有する筐体;
前記筐体と流体で連結された有機分子のソース;
前記有機分子のソースと流体で連結されたキャリアガスのソース;
バイパスバルブ;
前記バイパスバルブを介する前記有機分子のソースからの第一流路であって、第一伝導率を有する第一流路;並びに
前記少なくとも1つの開口を介する前記有機分子のソースからの第二流路であって、第二伝導率を有する第二流路;
を備え、
前記バイパスバルブが開放された場合に、前記第一伝導率が、前記第二伝導率の少なくとも100倍であり、
前記バイパスバルブが閉鎖された場合に、前記有機分子のソースによって製造された実質的に全ての有機分子が、前記第二流路をたどることを特徴とするデバイス。 - 前記バイパスバルブが閉鎖された場合に、前記第一伝導率が、0であることを特徴とする請求項1に記載のデバイス。
- 前記有機分子のソースが、前記第二端部よりも、密閉容積の前記第一端部の近くに配置され、
前記バイパスバルブが、密閉容積の前記第二端部に配置されたことを特徴とする請求項1に記載のデバイス。 - 前記バイパスバルブが開放された場合に、前記有機分子のソースによって製造された有機分子の少なくとも95%が、前記第一流路をたどることを特徴とする請求項1に記載のデバイス。
- 前記バイパスバルブが開放された場合に、前記有機分子のソースによって製造された実質的に全ての有機分子が、前記第一流路をたどることを特徴とする請求項4に記載のデバイス。
- 前記第一伝導率が、前記第二伝導率の少なくとも200倍であることを特徴とする請求項1に記載のデバイス。
- 前記第一伝導率が、前記第二伝導率の少なくとも500倍であることを特徴とする請求項1に記載のデバイス。
- 前記第一伝導率が、前記第二伝導率の少なくとも1000倍であることを特徴とする請求項1に記載のデバイス。
- 前記少なくとも1つの開口に設置された1つまたはそれ以上のノズルをさらに備えることを特徴とする請求項1に記載のデバイス。
- 前記1つまたはそれ以上のノズルの各々が、0.5cm以上の長さを有することを特徴とする請求項9に記載のデバイス。
- 前記1つまたはそれ以上のノズルの各々が、0.1cm以上の長さを有することを特徴とする請求項9に記載のデバイス。
- 前記1つまたはそれ以上のノズルの各々が、0.1cm〜1cmの範囲の長さを有することを特徴とする請求項9に記載のデバイス。
- 前記少なくとも1つの開口が、複数の開口を備え、
前記第二流路が、前記複数の開口を介する前記有機分子のソースからの流路であることを特徴とする請求項1に記載のデバイス。 - 前記複数の開口が、3×105μm2〜3×106μm2の範囲の総断面積を有することを特徴とする請求項13に記載のデバイス。
- 前記筐体が、前記複数の開口の総断面積の少なくとも100倍の断面積を有することを特徴とする請求項13に記載のデバイス。
- 前記開口の各々が、少なくとも5〜10μmの幅を有することを特徴とする請求項13に記載のデバイス。
- 前記開口の各々が、少なくとも5μm〜100μmの範囲の幅を有することを特徴とする請求項13に記載のデバイス。
- 前記開口の各々が、3000μm2以下の断面積を有することを特徴とする請求項13に記載のデバイス。
- 前記筐体の第二端部と流体で連結された真空ソースをさらに備えることを特徴とする請求項1に記載のデバイス。
- 遮断機構をさらに備え、
前記遮断機構は、該遮断機構が前記少なくとも1つの開口を覆う第一位置から、前記少なくとも1つの開口が覆われない第二位置まで移動可能であることを特徴とする請求項1に記載のデバイス。 - 前記遮断機構が、少なくとも1つのシャッターを備え、各シャッターが、少なくとも1つの開口を覆うように配置されたことを特徴とする請求項20に記載のデバイス。
- 前記デバイスが、作動時に、最大で1分の遅延時間を有することを特徴とする請求項1に記載のデバイス。
- 前記デバイスが、作動時に、最大で1秒の遅延時間を有することを特徴とする請求項1に記載のデバイス。
- 筐体、有機分子のソース、バイパスバルブ、および前記筐体内のバイパスバルブと有機分子のソースとの間に配置された少なくとも1つの開口を備えたOVJPシステムの操作方法であって、
キャリアガス流が、前記バイパスバルブを介する前記有機分子のソースからの第一流路を介して前記有機分子のソースから有機材料を輸送するように、前記バイパスバルブを開放するステップであって、前記バイパスバルブが開放された場合に、前記第一流路が、第一伝導率を有する、ステップ;および
前記キャリアガス流が、前記少なくとも1つの開口を介する前記有機分子のソースからの第二流路を介して有機材料を輸送するように、前記バイパスバルブを閉鎖するステップであって、前記第二流路が、第二伝導率を有する、ステップ;
を含み、
前記第一伝導率が、前記第二伝導率の少なくとも100倍であり、
前記バイパスバルブが閉鎖された場合に、前記有機分子のソースによって製造された実質的に全ての有機分子が、前記第二流路をたどることを特徴とする方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
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US24063809P | 2009-09-08 | 2009-09-08 | |
US61/240,638 | 2009-09-08 | ||
US12/874,368 | 2010-09-02 | ||
US12/874,368 US8801856B2 (en) | 2009-09-08 | 2010-09-02 | Method and system for high-throughput deposition of patterned organic thin films |
PCT/US2010/047780 WO2011031631A1 (en) | 2009-09-08 | 2010-09-03 | Method and system for deposition of patterned organic thin films |
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JP2013503978A JP2013503978A (ja) | 2013-02-04 |
JP5662452B2 true JP5662452B2 (ja) | 2015-01-28 |
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JP2012528844A Active JP5662452B2 (ja) | 2009-09-08 | 2010-09-03 | パターン化有機薄膜の堆積方法および堆積システム |
Country Status (7)
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US (1) | US8801856B2 (ja) |
EP (1) | EP2475800B1 (ja) |
JP (1) | JP5662452B2 (ja) |
KR (1) | KR101665748B1 (ja) |
CN (1) | CN102575335B (ja) |
IN (1) | IN2012DN02870A (ja) |
WO (1) | WO2011031631A1 (ja) |
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US8801856B2 (en) | 2009-09-08 | 2014-08-12 | Universal Display Corporation | Method and system for high-throughput deposition of patterned organic thin films |
US11220737B2 (en) | 2014-06-25 | 2022-01-11 | Universal Display Corporation | Systems and methods of modulating flow during vapor jet deposition of organic materials |
US11267012B2 (en) | 2014-06-25 | 2022-03-08 | Universal Display Corporation | Spatial control of vapor condensation using convection |
EP2960059B1 (en) * | 2014-06-25 | 2018-10-24 | Universal Display Corporation | Systems and methods of modulating flow during vapor jet deposition of organic materials |
CN104107742A (zh) * | 2014-06-30 | 2014-10-22 | 含山县关镇机械厂 | 新型的破碎机齿辊 |
US10566534B2 (en) | 2015-10-12 | 2020-02-18 | Universal Display Corporation | Apparatus and method to deliver organic material via organic vapor-jet printing (OVJP) |
US11168391B2 (en) | 2016-04-11 | 2021-11-09 | Universal Display Corporation | Nozzle exit contours for pattern composition |
KR102369676B1 (ko) | 2017-04-10 | 2022-03-04 | 삼성디스플레이 주식회사 | 표시 장치의 제조장치 및 표시 장치의 제조방법 |
US20190386256A1 (en) | 2018-06-18 | 2019-12-19 | Universal Display Corporation | Sequential material sources for thermally challenged OLED materials |
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US3930908A (en) * | 1974-09-30 | 1976-01-06 | Rca Corporation | Accurate control during vapor phase epitaxy |
JPH0627329B2 (ja) * | 1984-02-13 | 1994-04-13 | シュミット,ジェロウム・ジェイ・ザ・サ−ド | 導電および誘電性固体薄膜のガスジェット付着方法および装置とそれによって製造される生産物 |
US4769292A (en) | 1987-03-02 | 1988-09-06 | Eastman Kodak Company | Electroluminescent device with modified thin film luminescent zone |
JPS63307255A (ja) | 1987-06-08 | 1988-12-14 | Oki Electric Ind Co Ltd | 有機機能性材料薄膜の製造方法及びその製造装置 |
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US20110059259A1 (en) | 2011-03-10 |
IN2012DN02870A (ja) | 2015-07-24 |
EP2475800A1 (en) | 2012-07-18 |
EP2475800B1 (en) | 2020-04-22 |
JP2013503978A (ja) | 2013-02-04 |
KR101665748B1 (ko) | 2016-10-12 |
US8801856B2 (en) | 2014-08-12 |
CN102575335A (zh) | 2012-07-11 |
CN102575335B (zh) | 2016-01-27 |
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