JP5659759B2 - 固体撮像装置 - Google Patents

固体撮像装置 Download PDF

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Publication number
JP5659759B2
JP5659759B2 JP2010275444A JP2010275444A JP5659759B2 JP 5659759 B2 JP5659759 B2 JP 5659759B2 JP 2010275444 A JP2010275444 A JP 2010275444A JP 2010275444 A JP2010275444 A JP 2010275444A JP 5659759 B2 JP5659759 B2 JP 5659759B2
Authority
JP
Japan
Prior art keywords
photodiode
light
modulation element
area
light receiving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2010275444A
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English (en)
Japanese (ja)
Other versions
JP2012124402A (ja
JP2012124402A5 (cg-RX-API-DMAC10.html
Inventor
和伸 桑澤
和伸 桑澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP2010275444A priority Critical patent/JP5659759B2/ja
Priority to US13/311,051 priority patent/US8860100B2/en
Publication of JP2012124402A publication Critical patent/JP2012124402A/ja
Publication of JP2012124402A5 publication Critical patent/JP2012124402A5/ja
Application granted granted Critical
Publication of JP5659759B2 publication Critical patent/JP5659759B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H10F39/1825—Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8027—Geometry of the photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Color Television Image Signal Generators (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2010275444A 2010-12-10 2010-12-10 固体撮像装置 Expired - Fee Related JP5659759B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2010275444A JP5659759B2 (ja) 2010-12-10 2010-12-10 固体撮像装置
US13/311,051 US8860100B2 (en) 2010-12-10 2011-12-05 Solid-state imaging device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010275444A JP5659759B2 (ja) 2010-12-10 2010-12-10 固体撮像装置

Publications (3)

Publication Number Publication Date
JP2012124402A JP2012124402A (ja) 2012-06-28
JP2012124402A5 JP2012124402A5 (cg-RX-API-DMAC10.html) 2014-01-16
JP5659759B2 true JP5659759B2 (ja) 2015-01-28

Family

ID=46198477

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010275444A Expired - Fee Related JP5659759B2 (ja) 2010-12-10 2010-12-10 固体撮像装置

Country Status (2)

Country Link
US (1) US8860100B2 (cg-RX-API-DMAC10.html)
JP (1) JP5659759B2 (cg-RX-API-DMAC10.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015065270A (ja) 2013-09-25 2015-04-09 ソニー株式会社 固体撮像装置およびその製造方法、並びに電子機器
US9673239B1 (en) * 2016-01-15 2017-06-06 Taiwan Semiconductor Manufacturing Company, Ltd. Image sensor device and method
CN109979930B (zh) * 2017-12-28 2020-12-04 南京大学 基于复合介质栅光敏探测器的2×2阵列布局及工作方法
JP7086783B2 (ja) * 2018-08-13 2022-06-20 株式会社東芝 固体撮像装置

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2935492B2 (ja) 1997-10-30 1999-08-16 イノビジョン株式会社 固体撮像素子及び固体撮像素子による光信号検出方法
US6051857A (en) 1998-01-07 2000-04-18 Innovision, Inc. Solid-state imaging device and method of detecting optical signals using the same
US6977684B1 (en) * 1998-04-30 2005-12-20 Canon Kabushiki Kaisha Arrangement of circuits in pixels, each circuit shared by a plurality of pixels, in image sensing apparatus
TW494574B (en) 1999-12-01 2002-07-11 Innotech Corp Solid state imaging device, method of manufacturing the same, and solid state imaging system
JP3315962B2 (ja) 1999-12-01 2002-08-19 イノテック株式会社 固体撮像素子、その製造方法及び固体撮像装置
US6448596B1 (en) 2000-08-15 2002-09-10 Innotech Corporation Solid-state imaging device
JP3568885B2 (ja) 2000-08-15 2004-09-22 イノテック株式会社 固体撮像装置
JP3585219B2 (ja) 2000-08-25 2004-11-04 キヤノン株式会社 固体撮像装置および撮像システム
JP3988189B2 (ja) 2002-11-20 2007-10-10 ソニー株式会社 固体撮像装置
WO2004073301A1 (ja) 2003-02-13 2004-08-26 Matsushita Electric Industrial Co., Ltd. 固体撮像装置、その駆動方法及びそれを用いたカメラ
JP3916612B2 (ja) 2003-02-13 2007-05-16 松下電器産業株式会社 固体撮像装置、その駆動方法及びそれを用いたカメラ
JP3901114B2 (ja) 2003-03-10 2007-04-04 セイコーエプソン株式会社 固体撮像装置およびその製造方法
JP3829833B2 (ja) * 2003-09-09 2006-10-04 セイコーエプソン株式会社 固体撮像装置及びその駆動方法
KR100672711B1 (ko) 2004-12-30 2007-01-22 동부일렉트로닉스 주식회사 반도체 시모스 이미지 센서의 컬러 필터 어레이
JP2006203034A (ja) * 2005-01-21 2006-08-03 Nikon Corp 固体撮像装置
JP2008210928A (ja) 2007-02-26 2008-09-11 Seiko Epson Corp 固体撮像素子
JP4457326B2 (ja) 2007-04-18 2010-04-28 株式会社 Ｒｏｓｎｅｓ 固体撮像装置
JP4978614B2 (ja) * 2008-11-25 2012-07-18 ソニー株式会社 固体撮像装置
JP5262823B2 (ja) 2009-02-23 2013-08-14 ソニー株式会社 固体撮像装置および電子機器

Also Published As

Publication number Publication date
US20120146117A1 (en) 2012-06-14
JP2012124402A (ja) 2012-06-28
US8860100B2 (en) 2014-10-14

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