JP5658997B2 - 荷電粒子ビーム描画装置および描画データ生成方法 - Google Patents

荷電粒子ビーム描画装置および描画データ生成方法 Download PDF

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JP5658997B2
JP5658997B2 JP2010282239A JP2010282239A JP5658997B2 JP 5658997 B2 JP5658997 B2 JP 5658997B2 JP 2010282239 A JP2010282239 A JP 2010282239A JP 2010282239 A JP2010282239 A JP 2010282239A JP 5658997 B2 JP5658997 B2 JP 5658997B2
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charged particle
particle beam
data
see
shape
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JP2012129479A (ja
JP2012129479A5 (enExample
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健一 安井
健一 安井
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Nuflare Technology Inc
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Nuflare Technology Inc
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JP2010282239A 2010-12-17 2010-12-17 荷電粒子ビーム描画装置および描画データ生成方法 Expired - Fee Related JP5658997B2 (ja)

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JP2016076654A (ja) * 2014-10-08 2016-05-12 株式会社ニューフレアテクノロジー 描画データ生成方法、プログラム、マルチ荷電粒子ビーム描画装置、及びパターン検査装置
EP3037878B1 (en) * 2014-12-23 2020-09-09 Aselta Nanographics Method of applying vertex based corrections to a semiconductor design
JP6679933B2 (ja) 2016-01-05 2020-04-15 株式会社ニューフレアテクノロジー 描画データ作成方法
US12302641B2 (en) 2019-09-23 2025-05-13 Applied Materials, Inc. Optimization of a digital pattern file for a digital lithography device
JP7506870B2 (ja) * 2020-04-08 2024-06-27 日本コントロールシステム株式会社 マスク情報調整装置、マスクデータ調整方法、プログラム

Family Cites Families (11)

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JPS57204125A (en) * 1981-06-10 1982-12-14 Hitachi Ltd Electron-ray drawing device
JPS63199421A (ja) * 1987-02-16 1988-08-17 Toshiba Corp 荷電ビ−ム描画方法
JPH02170516A (ja) * 1988-12-23 1990-07-02 Jeol Ltd 荷電粒子ビーム描画装置
JPH09293669A (ja) * 1996-04-26 1997-11-11 Toshiba Corp 荷電ビーム描画装置および描画方法
JPH10270341A (ja) * 1997-03-28 1998-10-09 Jeol Ltd 電子ビーム描画方法
JP4752152B2 (ja) * 2001-08-08 2011-08-17 ソニー株式会社 描画用パターンの分割処理方法、描画用パターンの分割処理装置、描画方法、マスクの作成方法、半導体装置の製造方法、描画用パターンの分割処理プログラム及びこのプログラムを記録したコンピュータ読みとり可能な記録媒体
JP5257571B2 (ja) * 2007-09-07 2013-08-07 大日本印刷株式会社 図形パターン分割方法
JP2009177051A (ja) * 2008-01-28 2009-08-06 Jeol Ltd 荷電粒子ビーム描画装置のパターン描画方法及び装置
JP5216347B2 (ja) * 2008-02-04 2013-06-19 株式会社ニューフレアテクノロジー 描画装置及び描画データの変換方法
JP2011077313A (ja) * 2009-09-30 2011-04-14 Nuflare Technology Inc 荷電粒子ビーム描画装置およびその描画データ作成方法
JP5631151B2 (ja) * 2010-10-20 2014-11-26 株式会社ニューフレアテクノロジー 描画データの製造方法

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