JP5656458B2 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
JP5656458B2
JP5656458B2 JP2010126411A JP2010126411A JP5656458B2 JP 5656458 B2 JP5656458 B2 JP 5656458B2 JP 2010126411 A JP2010126411 A JP 2010126411A JP 2010126411 A JP2010126411 A JP 2010126411A JP 5656458 B2 JP5656458 B2 JP 5656458B2
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Japan
Prior art keywords
faraday shield
processing chamber
vacuum processing
plasma processing
processing apparatus
Prior art date
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Active
Application number
JP2010126411A
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English (en)
Japanese (ja)
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JP2011253916A5 (enExample
JP2011253916A (ja
Inventor
優作 属
優作 属
西尾　良司
良司 西尾
吉岡　健
健 吉岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Technologies Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Technologies Corp filed Critical Hitachi High Technologies Corp
Priority to JP2010126411A priority Critical patent/JP5656458B2/ja
Priority to KR1020100069324A priority patent/KR101142412B1/ko
Priority to US12/853,427 priority patent/US8940128B2/en
Publication of JP2011253916A publication Critical patent/JP2011253916A/ja
Publication of JP2011253916A5 publication Critical patent/JP2011253916A5/ja
Application granted granted Critical
Publication of JP5656458B2 publication Critical patent/JP5656458B2/ja
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/461—Microwave discharges
    • H05H1/463—Microwave discharges using antennas or applicators

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
JP2010126411A 2010-06-02 2010-06-02 プラズマ処理装置 Active JP5656458B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2010126411A JP5656458B2 (ja) 2010-06-02 2010-06-02 プラズマ処理装置
KR1020100069324A KR101142412B1 (ko) 2010-06-02 2010-07-19 플라즈마처리장치
US12/853,427 US8940128B2 (en) 2010-06-02 2010-08-10 Plasma processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010126411A JP5656458B2 (ja) 2010-06-02 2010-06-02 プラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2011253916A JP2011253916A (ja) 2011-12-15
JP2011253916A5 JP2011253916A5 (enExample) 2013-07-04
JP5656458B2 true JP5656458B2 (ja) 2015-01-21

Family

ID=45063549

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010126411A Active JP5656458B2 (ja) 2010-06-02 2010-06-02 プラズマ処理装置

Country Status (3)

Country Link
US (1) US8940128B2 (enExample)
JP (1) JP5656458B2 (enExample)
KR (1) KR101142412B1 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5711953B2 (ja) * 2010-12-13 2015-05-07 株式会社日立ハイテクノロジーズ プラズマ処理装置
US9293353B2 (en) * 2011-04-28 2016-03-22 Lam Research Corporation Faraday shield having plasma density decoupling structure between TCP coil zones
US9490106B2 (en) 2011-04-28 2016-11-08 Lam Research Corporation Internal Faraday shield having distributed chevron patterns and correlated positioning relative to external inner and outer TCP coil
WO2013099372A1 (ja) * 2011-12-27 2013-07-04 キヤノンアネルバ株式会社 放電容器及びプラズマ処理装置
SG2013075437A (en) * 2012-10-23 2014-05-29 Lam Res Corp Faraday shield having plasma density decouplingstructure between tcp coil zones
US9029267B2 (en) 2013-05-16 2015-05-12 Lam Research Corporation Controlling temperature of a faraday shield
US9885493B2 (en) 2013-07-17 2018-02-06 Lam Research Corporation Air cooled faraday shield and methods for using the same
JP6282128B2 (ja) * 2014-02-05 2018-02-21 株式会社日立ハイテクノロジーズ プラズマ処理装置及びｆｓｖの制御方法
JP6277055B2 (ja) * 2014-04-25 2018-02-07 株式会社日立ハイテクノロジーズ プラズマ処理装置
US10896806B2 (en) * 2016-11-03 2021-01-19 En2Core Technology, Inc. Inductive coil structure and inductively coupled plasma generation system
US20180358206A1 (en) * 2017-06-09 2018-12-13 Mattson Technology, Inc. Plasma Processing Apparatus
US11521828B2 (en) * 2017-10-09 2022-12-06 Applied Materials, Inc. Inductively coupled plasma source
US10264663B1 (en) * 2017-10-18 2019-04-16 Lam Research Corporation Matchless plasma source for semiconductor wafer fabrication
JP7080786B2 (ja) * 2018-09-28 2022-06-06 株式会社ダイヘン プラズマ発生装置
US11056321B2 (en) * 2019-01-03 2021-07-06 Lam Research Corporation Metal contamination reduction in substrate processing systems with transformer coupled plasma
CN110491760B (zh) * 2019-08-23 2020-09-15 江苏鲁汶仪器有限公司 一种法拉第清洗装置及等离子体处理系统
US12374530B2 (en) * 2019-08-28 2025-07-29 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor processing apparatus for generating plasma
CN111799197B (zh) * 2020-07-27 2025-11-25 上海邦芯半导体科技有限公司 感性耦合反应器及其工作方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0864394A (ja) * 1994-08-24 1996-03-08 Nissin Electric Co Ltd プラズマ処理装置
US5907221A (en) * 1995-08-16 1999-05-25 Applied Materials, Inc. Inductively coupled plasma reactor with an inductive coil antenna having independent loops
US6388382B1 (en) * 1999-03-09 2002-05-14 Hitachi, Ltd. Plasma processing apparatus and method
JP2005175503A (ja) * 1999-04-28 2005-06-30 Hitachi Ltd プラズマ処理装置及びプラズマ処理方法
JP4585648B2 (ja) * 1999-09-03 2010-11-24 株式会社アルバック プラズマ処理装置
JP3621900B2 (ja) * 2000-09-12 2005-02-16 株式会社日立製作所 プラズマ処理装置および方法
JP3630666B2 (ja) * 2002-02-15 2005-03-16 株式会社日立ハイテクノロジーズ プラズマ処理方法
US20030160024A1 (en) 2002-02-27 2003-08-28 Tadayashi Kawaguchi Plasma processing method and apparatus
JP3935850B2 (ja) 2003-01-31 2007-06-27 株式会社日立ハイテクノロジーズ プラズマ処理装置
US20040173314A1 (en) * 2003-03-05 2004-09-09 Ryoji Nishio Plasma processing apparatus and method
JP3816081B2 (ja) * 2004-03-10 2006-08-30 松下電器産業株式会社 プラズマエッチング装置及びプラズマエッチング方法
US7342361B2 (en) * 2005-05-11 2008-03-11 Dublin City University Plasma source
JP2008060258A (ja) * 2006-08-30 2008-03-13 Matsushita Electric Ind Co Ltd プラズマ処理装置およびプラズマ処理方法
US8438990B2 (en) * 2008-09-30 2013-05-14 Applied Materials, Inc. Multi-electrode PECVD source
KR101122132B1 (ko) * 2008-10-13 2012-03-15 김남진 플라즈마 처리장치

Also Published As

Publication number Publication date
US8940128B2 (en) 2015-01-27
JP2011253916A (ja) 2011-12-15
US20110297320A1 (en) 2011-12-08
KR101142412B1 (ko) 2012-05-11
KR20110132508A (ko) 2011-12-08

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