JP2011253916A5 - - Google Patents

Download PDF

Info

Publication number
JP2011253916A5
JP2011253916A5 JP2010126411A JP2010126411A JP2011253916A5 JP 2011253916 A5 JP2011253916 A5 JP 2011253916A5 JP 2010126411 A JP2010126411 A JP 2010126411A JP 2010126411 A JP2010126411 A JP 2010126411A JP 2011253916 A5 JP2011253916 A5 JP 2011253916A5
Authority
JP
Japan
Prior art keywords
faraday shield
plasma processing
processing chamber
processing apparatus
divided
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2010126411A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011253916A (ja
JP5656458B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2010126411A priority Critical patent/JP5656458B2/ja
Priority claimed from JP2010126411A external-priority patent/JP5656458B2/ja
Priority to KR1020100069324A priority patent/KR101142412B1/ko
Priority to US12/853,427 priority patent/US8940128B2/en
Publication of JP2011253916A publication Critical patent/JP2011253916A/ja
Publication of JP2011253916A5 publication Critical patent/JP2011253916A5/ja
Application granted granted Critical
Publication of JP5656458B2 publication Critical patent/JP5656458B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2010126411A 2010-06-02 2010-06-02 プラズマ処理装置 Active JP5656458B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2010126411A JP5656458B2 (ja) 2010-06-02 2010-06-02 プラズマ処理装置
KR1020100069324A KR101142412B1 (ko) 2010-06-02 2010-07-19 플라즈마처리장치
US12/853,427 US8940128B2 (en) 2010-06-02 2010-08-10 Plasma processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010126411A JP5656458B2 (ja) 2010-06-02 2010-06-02 プラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2011253916A JP2011253916A (ja) 2011-12-15
JP2011253916A5 true JP2011253916A5 (enExample) 2013-07-04
JP5656458B2 JP5656458B2 (ja) 2015-01-21

Family

ID=45063549

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010126411A Active JP5656458B2 (ja) 2010-06-02 2010-06-02 プラズマ処理装置

Country Status (3)

Country Link
US (1) US8940128B2 (enExample)
JP (1) JP5656458B2 (enExample)
KR (1) KR101142412B1 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5711953B2 (ja) * 2010-12-13 2015-05-07 株式会社日立ハイテクノロジーズ プラズマ処理装置
US9293353B2 (en) * 2011-04-28 2016-03-22 Lam Research Corporation Faraday shield having plasma density decoupling structure between TCP coil zones
US9490106B2 (en) 2011-04-28 2016-11-08 Lam Research Corporation Internal Faraday shield having distributed chevron patterns and correlated positioning relative to external inner and outer TCP coil
WO2013099372A1 (ja) * 2011-12-27 2013-07-04 キヤノンアネルバ株式会社 放電容器及びプラズマ処理装置
SG2013075437A (en) * 2012-10-23 2014-05-29 Lam Res Corp Faraday shield having plasma density decouplingstructure between tcp coil zones
US9029267B2 (en) 2013-05-16 2015-05-12 Lam Research Corporation Controlling temperature of a faraday shield
US9885493B2 (en) 2013-07-17 2018-02-06 Lam Research Corporation Air cooled faraday shield and methods for using the same
JP6282128B2 (ja) * 2014-02-05 2018-02-21 株式会社日立ハイテクノロジーズ プラズマ処理装置及びｆｓｖの制御方法
JP6277055B2 (ja) * 2014-04-25 2018-02-07 株式会社日立ハイテクノロジーズ プラズマ処理装置
US10896806B2 (en) * 2016-11-03 2021-01-19 En2Core Technology, Inc. Inductive coil structure and inductively coupled plasma generation system
US20180358206A1 (en) * 2017-06-09 2018-12-13 Mattson Technology, Inc. Plasma Processing Apparatus
US11521828B2 (en) * 2017-10-09 2022-12-06 Applied Materials, Inc. Inductively coupled plasma source
US10264663B1 (en) * 2017-10-18 2019-04-16 Lam Research Corporation Matchless plasma source for semiconductor wafer fabrication
JP7080786B2 (ja) * 2018-09-28 2022-06-06 株式会社ダイヘン プラズマ発生装置
US11056321B2 (en) * 2019-01-03 2021-07-06 Lam Research Corporation Metal contamination reduction in substrate processing systems with transformer coupled plasma
CN110491760B (zh) * 2019-08-23 2020-09-15 江苏鲁汶仪器有限公司 一种法拉第清洗装置及等离子体处理系统
US12374530B2 (en) * 2019-08-28 2025-07-29 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor processing apparatus for generating plasma
CN111799197B (zh) * 2020-07-27 2025-11-25 上海邦芯半导体科技有限公司 感性耦合反应器及其工作方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0864394A (ja) * 1994-08-24 1996-03-08 Nissin Electric Co Ltd プラズマ処理装置
US5907221A (en) * 1995-08-16 1999-05-25 Applied Materials, Inc. Inductively coupled plasma reactor with an inductive coil antenna having independent loops
US6388382B1 (en) * 1999-03-09 2002-05-14 Hitachi, Ltd. Plasma processing apparatus and method
JP2005175503A (ja) * 1999-04-28 2005-06-30 Hitachi Ltd プラズマ処理装置及びプラズマ処理方法
JP4585648B2 (ja) * 1999-09-03 2010-11-24 株式会社アルバック プラズマ処理装置
JP3621900B2 (ja) * 2000-09-12 2005-02-16 株式会社日立製作所 プラズマ処理装置および方法
JP3630666B2 (ja) * 2002-02-15 2005-03-16 株式会社日立ハイテクノロジーズ プラズマ処理方法
US20030160024A1 (en) 2002-02-27 2003-08-28 Tadayashi Kawaguchi Plasma processing method and apparatus
JP3935850B2 (ja) 2003-01-31 2007-06-27 株式会社日立ハイテクノロジーズ プラズマ処理装置
US20040173314A1 (en) * 2003-03-05 2004-09-09 Ryoji Nishio Plasma processing apparatus and method
JP3816081B2 (ja) * 2004-03-10 2006-08-30 松下電器産業株式会社 プラズマエッチング装置及びプラズマエッチング方法
US7342361B2 (en) * 2005-05-11 2008-03-11 Dublin City University Plasma source
JP2008060258A (ja) * 2006-08-30 2008-03-13 Matsushita Electric Ind Co Ltd プラズマ処理装置およびプラズマ処理方法
US8438990B2 (en) * 2008-09-30 2013-05-14 Applied Materials, Inc. Multi-electrode PECVD source
KR101122132B1 (ko) * 2008-10-13 2012-03-15 김남진 플라즈마 처리장치

Similar Documents

Publication Publication Date Title
JP2011253916A5 (enExample)
KR102723939B1 (ko) 플라즈마 처리 장치의 임피던스 정합을 위한 방법
JP2017504955A5 (enExample)
TWI645069B (zh) 高頻天線電路及感應耦合電漿處理裝置
WO2012169747A3 (ko) 벨트형 자석을 포함한 플라즈마 발생원 및 이를 이용한 박막 증착 시스템
KR20250138835A (ko) 제어 방법 및 플라즈마 처리 장치
JP2013045903A5 (enExample)
TWI573168B (zh) A plasma processing apparatus, a plasma generating apparatus, an antenna structure, and a plasma generating method
TW202431899A (zh) 用於在空間域和時間域上控制基板上的電漿處理之系統和方法，及相關的電腦可讀取媒體
JP2005534150A5 (enExample)
TW201533837A (zh) 於載置台吸附被吸附物之方法及處理裝置
JP2012038461A (ja) プラズマ処理装置
WO2011142957A3 (en) Inductive plasma source with metallic shower head using b-field concentrator
EP2390898A3 (en) Plasma processing apparatus and processing gas supply structure thereof
JP2013084653A5 (enExample)
WO2013041195A3 (de) Multifrequente induktionserwärmung von generativ hergestellten bauteilen
TWI493592B (zh) Plasma processing device
TW201430898A (zh) 在電漿增強型基板處理室中的偏斜消除與控制
JP2012227398A5 (enExample)
JP2014135305A5 (enExample)
WO2008123346A1 (ja) 高電圧プラズマ発生装置
JP2013080643A5 (enExample)
JP5639866B2 (ja) プラズマ処理装置
TWI615063B (zh) 電感耦合型等離子體處理裝置及其自感應線圈及其用於製造半導體基片的方法
MX342253B (es) Dispositivo para la generacion de plasma que tiene un intervalo alto a lo largo de un eje por la resonancia ciclotronica de electrones (ecr) de un medio gaseoso.