JP5651145B2 - 物理蒸着用ターゲット構造物 - Google Patents
物理蒸着用ターゲット構造物 Download PDFInfo
- Publication number
- JP5651145B2 JP5651145B2 JP2012188231A JP2012188231A JP5651145B2 JP 5651145 B2 JP5651145 B2 JP 5651145B2 JP 2012188231 A JP2012188231 A JP 2012188231A JP 2012188231 A JP2012188231 A JP 2012188231A JP 5651145 B2 JP5651145 B2 JP 5651145B2
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- JP
- Japan
- Prior art keywords
- target
- ring
- target structure
- region
- flange region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3423—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Description
ターゲット構造物であって、
前記ターゲット構造物の前面に配置されたスパッタ面を含むスパッタ領域と、
前記スパッタ領域に対して横方向外方に向かい、かつ、前記スパッタ領域から前記構造物の外縁まで延びる前面を有するフランジ領域と、
前記フランジ領域の前面の少なくとも一部を覆う保護層とを備え、
前記保護層が約0.00254cm(0.001インチ)から約0.254cm(0.1インチ)の厚さであり、前記保護層は前記フランジ領域の前面に較べて低摩擦係数を有する、ターゲット構造物である。
本願発明の第3の側面は、前記材料の前記リングが、前記フランジ領域により受け入れられる留め具により、前記前面に貼られている、上記のターゲット構造物である。
本願発明の第4の側面は、前記フランジ領域の前記前面の中にOリング用溝をさらに備え、前記保護層が、前記Oリング用溝から前記ターゲット構造物の外縁に向かって横方向外方に延びている、上記のターゲット構造物である。
本願発明の第5の側面は、前記フランジ領域を通して延びる開口をさらに備え、前記開口が前記Oリング用溝と前記外縁との間に配置され、さらに前記保護層が前記開口と整合した孔を含む、上記のターゲット構造物である。
Claims (5)
- ターゲット構造物であって、
前記ターゲット構造物の前面に配置されたスパッタ面を含むスパッタ領域と、
前記スパッタ領域に対して横方向外方に向かい、かつ、前記スパッタ領域から前記構造物の外縁まで延びる前面を有するフランジ領域と、
前記フランジ領域の前面の少なくとも一部を覆う保護層とを備え、
前記保護層が0.00254cm(0.001インチ)から0.254cm(0.1インチ)の厚さであり、前記保護層は前記フランジ領域の前面に較べて低摩擦係数を有する、ターゲット構造物。 - 前記保護層が、リングの形状である、請求項1に記載のターゲット構造物。
- 前記リングの形状の保護層が、前記フランジ領域により受け入れられる留め具により、前記前面に貼られている、請求項2に記載のターゲット構造物。
- 前記フランジ領域の前記前面の中にOリング用溝をさらに備え、前記保護層が、前記Oリング用溝から前記ターゲット構造物の外縁に向かって横方向外方に延びている、請求項1に記載のターゲット構造物。
- 前記フランジ領域を通して延びる開口をさらに備え、前記開口が前記Oリング用溝と前記外縁との間に配置され、さらに前記保護層が前記開口と整合した孔を含む、請求項1に記載のターゲット構造物。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US54166504P | 2004-02-03 | 2004-02-03 | |
US60/541,665 | 2004-02-03 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006552243A Division JP2007520634A (ja) | 2004-02-03 | 2005-02-02 | 物理蒸着用ターゲット構造物 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012255218A JP2012255218A (ja) | 2012-12-27 |
JP5651145B2 true JP5651145B2 (ja) | 2015-01-07 |
Family
ID=34837509
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006552243A Pending JP2007520634A (ja) | 2004-02-03 | 2005-02-02 | 物理蒸着用ターゲット構造物 |
JP2012188231A Expired - Fee Related JP5651145B2 (ja) | 2004-02-03 | 2012-08-29 | 物理蒸着用ターゲット構造物 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006552243A Pending JP2007520634A (ja) | 2004-02-03 | 2005-02-02 | 物理蒸着用ターゲット構造物 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7618520B2 (ja) |
EP (1) | EP1711646A4 (ja) |
JP (2) | JP2007520634A (ja) |
KR (1) | KR20060123504A (ja) |
CN (1) | CN1910304A (ja) |
TW (1) | TWI381061B (ja) |
WO (1) | WO2005074640A2 (ja) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7297247B2 (en) * | 2003-05-06 | 2007-11-20 | Applied Materials, Inc. | Electroformed sputtering target |
US7910218B2 (en) | 2003-10-22 | 2011-03-22 | Applied Materials, Inc. | Cleaning and refurbishing chamber components having metal coatings |
US7670436B2 (en) | 2004-11-03 | 2010-03-02 | Applied Materials, Inc. | Support ring assembly |
JP4629051B2 (ja) * | 2004-11-17 | 2011-02-09 | Jx日鉱日石金属株式会社 | スパッタリングターゲット−バッキングプレート組立体及び成膜装置 |
US8617672B2 (en) | 2005-07-13 | 2013-12-31 | Applied Materials, Inc. | Localized surface annealing of components for substrate processing chambers |
US7762114B2 (en) * | 2005-09-09 | 2010-07-27 | Applied Materials, Inc. | Flow-formed chamber component having a textured surface |
US9127362B2 (en) * | 2005-10-31 | 2015-09-08 | Applied Materials, Inc. | Process kit and target for substrate processing chamber |
US8647484B2 (en) | 2005-11-25 | 2014-02-11 | Applied Materials, Inc. | Target for sputtering chamber |
CN101415858B (zh) * | 2006-04-04 | 2012-04-25 | 普莱克斯技术有限公司 | 改进溅射靶组件的排气槽 |
US20080236499A1 (en) * | 2007-03-30 | 2008-10-02 | Jean-Pierre Blanchet | Vent groove modified sputter target assembly and apparatus containing same |
SG173342A1 (en) * | 2006-04-04 | 2011-08-29 | Praxair Technology Inc | Vent groove modified sputter target assembly |
US20070283884A1 (en) * | 2006-05-30 | 2007-12-13 | Applied Materials, Inc. | Ring assembly for substrate processing chamber |
US20080067058A1 (en) * | 2006-09-15 | 2008-03-20 | Stimson Bradley O | Monolithic target for flat panel application |
US7981262B2 (en) | 2007-01-29 | 2011-07-19 | Applied Materials, Inc. | Process kit for substrate processing chamber |
FR2913429B1 (fr) * | 2007-03-05 | 2009-04-17 | H E F Soc Par Actions Simplifi | Procede d'assemblage d'au moins deux plaques et utilisation du procede pour la realisation d'un ensemble de pulverisation ionique. |
US8002874B2 (en) | 2007-03-06 | 2011-08-23 | Membrane Technology And Research, Inc. | Liquid-phase and vapor-phase dehydration of organic/water solutions |
US7942969B2 (en) | 2007-05-30 | 2011-05-17 | Applied Materials, Inc. | Substrate cleaning chamber and components |
US8968536B2 (en) * | 2007-06-18 | 2015-03-03 | Applied Materials, Inc. | Sputtering target having increased life and sputtering uniformity |
US7901552B2 (en) * | 2007-10-05 | 2011-03-08 | Applied Materials, Inc. | Sputtering target with grooves and intersecting channels |
JP5676429B2 (ja) * | 2008-04-21 | 2015-02-25 | ハネウェル・インターナショナル・インコーポレーテッド | Dcマグネトロンスパッタリングシステムの設計および使用 |
US20120027954A1 (en) * | 2010-07-30 | 2012-02-02 | Applied Materials, Inc. | Magnet for physical vapor deposition processes to produce thin films having low resistivity and non-uniformity |
US8968537B2 (en) * | 2011-02-09 | 2015-03-03 | Applied Materials, Inc. | PVD sputtering target with a protected backing plate |
WO2013163623A1 (en) | 2012-04-26 | 2013-10-31 | Intevac, Inc. | Narrow source for physical vapor deposition processing |
US9633824B2 (en) | 2013-03-05 | 2017-04-25 | Applied Materials, Inc. | Target for PVD sputtering system |
US9534286B2 (en) * | 2013-03-15 | 2017-01-03 | Applied Materials, Inc. | PVD target for self-centering process shield |
US9831075B2 (en) | 2013-09-17 | 2017-11-28 | Applied Materials, Inc. | Source magnet for improved resputtering uniformity in direct current (DC) physical vapor deposition (PVD) processes |
US9960021B2 (en) * | 2013-12-18 | 2018-05-01 | Applied Materials, Inc. | Physical vapor deposition (PVD) target having low friction pads |
US11244815B2 (en) | 2017-04-20 | 2022-02-08 | Honeywell International Inc. | Profiled sputtering target and method of making the same |
CN108486535B (zh) * | 2018-05-17 | 2021-03-12 | 宁波江丰电子材料股份有限公司 | 靶材组件 |
US11618943B2 (en) * | 2020-10-23 | 2023-04-04 | Applied Materials, Inc. | PVD target having self-retained low friction pads |
KR102559553B1 (ko) * | 2020-12-08 | 2023-07-26 | (주)지오엘리먼트 | 상면 보강부를 구비한 스퍼터링 타겟 및 이의 제조방법 |
US20220356560A1 (en) * | 2021-05-07 | 2022-11-10 | Taiwan Semiconductor Manufacturing Company Limited | Physical vapor deposition (pvd) system and method of processing target |
US20240068086A1 (en) * | 2022-08-29 | 2024-02-29 | Applied Materials, Inc. | Physical Vapor Deposition (PVD) Chamber Titanium-Tungsten (TiW) Target For Particle Improvement |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH051374A (ja) * | 1991-02-05 | 1993-01-08 | Toshiba Corp | スパツタリング装置 |
CA2218736A1 (en) * | 1995-05-11 | 1996-11-14 | Steven D. Hurwitt | Sputtering apparatus with isolated coolant and sputtering target therefor |
JPH09176849A (ja) * | 1995-12-22 | 1997-07-08 | Applied Materials Inc | スパッタリングターゲットのアッセンブリ |
US5658442A (en) * | 1996-03-07 | 1997-08-19 | Applied Materials, Inc. | Target and dark space shield for a physical vapor deposition system |
US6045670A (en) * | 1997-01-08 | 2000-04-04 | Applied Materials, Inc. | Back sputtering shield |
US5935397A (en) * | 1998-04-30 | 1999-08-10 | Rockwell Semiconductor Systems, Inc. | Physical vapor deposition chamber |
US6149776A (en) * | 1998-11-12 | 2000-11-21 | Applied Materials, Inc. | Copper sputtering target |
US6416634B1 (en) * | 2000-04-05 | 2002-07-09 | Applied Materials, Inc. | Method and apparatus for reducing target arcing during sputter deposition |
JP3972558B2 (ja) * | 2000-06-23 | 2007-09-05 | 松下電器産業株式会社 | スパッタリング装置 |
US20020162741A1 (en) * | 2001-05-01 | 2002-11-07 | Applied Materials, Inc. | Multi-material target backing plate |
JP2003293126A (ja) * | 2002-04-09 | 2003-10-15 | Fujitsu Ltd | スパッタリングターゲット及びその製造方法 |
-
2005
- 2005-02-02 KR KR1020067015648A patent/KR20060123504A/ko not_active Application Discontinuation
- 2005-02-02 JP JP2006552243A patent/JP2007520634A/ja active Pending
- 2005-02-02 CN CNA2005800022993A patent/CN1910304A/zh active Pending
- 2005-02-02 EP EP05722706A patent/EP1711646A4/en not_active Ceased
- 2005-02-02 WO PCT/US2005/003437 patent/WO2005074640A2/en not_active Application Discontinuation
- 2005-02-03 TW TW094103443A patent/TWI381061B/zh not_active IP Right Cessation
- 2005-09-23 US US11/234,615 patent/US7618520B2/en not_active Expired - Fee Related
-
2012
- 2012-08-29 JP JP2012188231A patent/JP5651145B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR20060123504A (ko) | 2006-12-01 |
EP1711646A4 (en) | 2008-05-28 |
US20060070876A1 (en) | 2006-04-06 |
EP1711646A2 (en) | 2006-10-18 |
WO2005074640A2 (en) | 2005-08-18 |
CN1910304A (zh) | 2007-02-07 |
US7618520B2 (en) | 2009-11-17 |
TWI381061B (zh) | 2013-01-01 |
WO2005074640A3 (en) | 2006-03-09 |
JP2007520634A (ja) | 2007-07-26 |
TW200535267A (en) | 2005-11-01 |
JP2012255218A (ja) | 2012-12-27 |
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