JP5647985B2 - エネルギービームの照射を利用したシリコーン薄膜の製造方法 - Google Patents

エネルギービームの照射を利用したシリコーン薄膜の製造方法 Download PDF

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JP5647985B2
JP5647985B2 JP2011532012A JP2011532012A JP5647985B2 JP 5647985 B2 JP5647985 B2 JP 5647985B2 JP 2011532012 A JP2011532012 A JP 2011532012A JP 2011532012 A JP2011532012 A JP 2011532012A JP 5647985 B2 JP5647985 B2 JP 5647985B2
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substrate
thin film
silicone
electron beam
irradiating
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JP2012506143A (ja
Inventor
キム，ヨンファン
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インフォビオン カンパニー リミテッド
インフォビオン カンパニー リミテッド
キム，ヨンファン
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Priority claimed from PCT/KR2009/005677 external-priority patent/WO2010044558A2/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02689—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using particle beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP2011532012A 2008-10-15 2009-10-05 エネルギービームの照射を利用したシリコーン薄膜の製造方法 Active JP5647985B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
KR20080101008 2008-10-15
KR10-2008-0101008 2008-10-15
KR10-2008-0110565 2008-11-07
KR1020080110565A KR101042636B1 (ko) 2008-10-15 2008-11-07 에너지빔 조사를 이용한 실리콘 박막 제조방법
PCT/KR2009/005677 WO2010044558A2 (ko) 2008-10-15 2009-10-05 에너지빔 조사를 이용한 실리콘 박막 제조방법

Publications (2)

Publication Number Publication Date
JP2012506143A JP2012506143A (ja) 2012-03-08
JP5647985B2 true JP5647985B2 (ja) 2015-01-07

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JP2011532012A Active JP5647985B2 (ja) 2008-10-15 2009-10-05 エネルギービームの照射を利用したシリコーン薄膜の製造方法

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JP (1) JP5647985B2 (ko)
KR (2) KR101042636B1 (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101435525B1 (ko) * 2012-06-28 2014-09-02 주식회사 신기인터모빌 플라스틱 부품의 표면 처리 방법
KR20190008702A (ko) 2017-07-17 2019-01-25 박흥균 대면적 전자빔을 이용한 박막 공정 장치
KR102045059B1 (ko) * 2018-02-28 2019-12-03 주식회사 인포비온 고밀도 선형 유도 결합형 플라즈마 소스
KR102301846B1 (ko) * 2018-12-12 2021-09-15 한국세라믹기술원 전이금속 칼코겐화합물 박막의 제조 방법 및 이를 이용한 전자소자의 제조 방법
WO2023033428A1 (ko) * 2021-08-31 2023-03-09 고려대학교 산학협력단 반도체 기판 및 반도체 박막 증착 장치

Family Cites Families (14)

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Publication number Priority date Publication date Assignee Title
JPS583222A (ja) * 1981-06-29 1983-01-10 Fujitsu Ltd イオンビ−ム堆積法
JPS62213115A (ja) * 1986-03-13 1987-09-19 Nec Corp 多結晶シリコン薄膜の製造方法及びその製造装置
JPH07114184B2 (ja) * 1987-07-27 1995-12-06 日本電信電話株式会社 薄膜形シリコン半導体装置およびその製造方法
JPH01245849A (ja) * 1988-03-25 1989-10-02 Matsushita Electric Ind Co Ltd 薄膜の製造方法
JPH02267186A (ja) * 1989-04-08 1990-10-31 Seiko Epson Corp エピタキシャル法
JP2794901B2 (ja) * 1989-06-01 1998-09-10 富士電機株式会社 ビームアナリシス方法
JPH05121327A (ja) * 1991-05-17 1993-05-18 Asahi Chem Ind Co Ltd 窒化ガリウム系薄膜の製造方法
JPH08293471A (ja) * 1995-04-21 1996-11-05 Sony Corp 薄膜の製造方法および薄膜素子の製造方法
JP3081914B2 (ja) * 1997-10-07 2000-08-28 工業技術院長 Ｉｉｉ族窒化物半導体膜の成長方法
JP3027968B2 (ja) * 1998-01-29 2000-04-04 日新電機株式会社 成膜装置
TW575866B (en) * 2002-06-05 2004-02-11 Hitachi Ltd Display device with active-matrix transistor and method for manufacturing the same
JP2004131783A (ja) * 2002-10-09 2004-04-30 Furukawa Electric Co Ltd:The 成膜装置、成膜方法および光学素子の製造方法
KR100569118B1 (ko) * 2004-01-20 2006-04-10 진 장 비정질 실리콘 결정화 장치 및 대면적 비정질 실리콘의결정화 방법
JP4627693B2 (ja) * 2005-07-26 2011-02-09 三菱電機株式会社 薄膜形成装置

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Publication number Publication date
KR20100042205A (ko) 2010-04-23
KR101084495B1 (ko) 2011-11-17
JP2012506143A (ja) 2012-03-08
KR20100110762A (ko) 2010-10-13
KR101042636B1 (ko) 2011-06-20

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