JP5642962B2 - Ｃｍｐ用途における調節可能な選択性スラリー - Google Patents

Ｃｍｐ用途における調節可能な選択性スラリー Download PDF

Info

Publication number
JP5642962B2
JP5642962B2 JP2009518144A JP2009518144A JP5642962B2 JP 5642962 B2 JP5642962 B2 JP 5642962B2 JP 2009518144 A JP2009518144 A JP 2009518144A JP 2009518144 A JP2009518144 A JP 2009518144A JP 5642962 B2 JP5642962 B2 JP 5642962B2
Authority
JP
Japan
Prior art keywords
layer
polishing composition
chemical mechanical
mechanical polishing
selectivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2009518144A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009543336A5 (https=
JP2009543336A (ja
Inventor
チェン，チャン
バカッシー，ロバート
バイエル，ベンジャミン
カンナ，ディネッシュ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CMC Materials LLC
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of JP2009543336A publication Critical patent/JP2009543336A/ja
Publication of JP2009543336A5 publication Critical patent/JP2009543336A5/ja
Application granted granted Critical
Publication of JP5642962B2 publication Critical patent/JP5642962B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2009518144A 2006-06-29 2007-06-13 Ｃｍｐ用途における調節可能な選択性スラリー Active JP5642962B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/478,023 2006-06-29
US11/478,023 US7294576B1 (en) 2006-06-29 2006-06-29 Tunable selectivity slurries in CMP applications
PCT/US2007/013889 WO2008005160A1 (en) 2006-06-29 2007-06-13 Tunable selectivity slurries in cmp applications

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014138830A Division JP5986146B2 (ja) 2006-06-29 2014-07-04 基板を化学機械的に研磨加工する方法

Publications (3)

Publication Number Publication Date
JP2009543336A JP2009543336A (ja) 2009-12-03
JP2009543336A5 JP2009543336A5 (https=) 2010-05-20
JP5642962B2 true JP5642962B2 (ja) 2014-12-17

Family

ID=38664578

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2009518144A Active JP5642962B2 (ja) 2006-06-29 2007-06-13 Ｃｍｐ用途における調節可能な選択性スラリー
JP2014138830A Expired - Fee Related JP5986146B2 (ja) 2006-06-29 2014-07-04 基板を化学機械的に研磨加工する方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2014138830A Expired - Fee Related JP5986146B2 (ja) 2006-06-29 2014-07-04 基板を化学機械的に研磨加工する方法

Country Status (10)

Country Link
US (1) US7294576B1 (https=)
EP (1) EP2038361A4 (https=)
JP (2) JP5642962B2 (https=)
KR (1) KR101252895B1 (https=)
CN (1) CN101479359B (https=)
IL (1) IL195697A (https=)
MY (1) MY144326A (https=)
SG (1) SG173331A1 (https=)
TW (1) TWI354697B (https=)
WO (1) WO2008005160A1 (https=)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080096385A1 (en) * 2006-09-27 2008-04-24 Hynix Semiconductor Inc. Slurry composition for forming tungsten pattern and method for manufacturing semiconductor device using the same
JP5361306B2 (ja) * 2008-09-19 2013-12-04 Ｊｓｒ株式会社 化学機械研磨用水系分散体および化学機械研磨方法
US8480920B2 (en) * 2009-04-02 2013-07-09 Jsr Corporation Chemical mechanical polishing aqueous dispersion, method of preparing the same, chemical mechanical polishing aqueous dispersion preparation kit, and chemical mechanical polishing method
CN102650059B (zh) * 2009-06-26 2015-04-15 中国石油化工股份有限公司 一种丁基橡胶氯甲烷甘醇脱水再生系统的复合缓蚀剂
KR101419295B1 (ko) 2012-03-30 2014-07-14 니타 하스 인코포레이티드 연마 조성물
US8778212B2 (en) 2012-05-22 2014-07-15 Cabot Microelectronics Corporation CMP composition containing zirconia particles and method of use
US9303189B2 (en) * 2014-03-11 2016-04-05 Cabot Microelectronics Corporation Composition for tungsten CMP
US9238754B2 (en) * 2014-03-11 2016-01-19 Cabot Microelectronics Corporation Composition for tungsten CMP
CN111584354B (zh) * 2014-04-18 2021-09-03 株式会社荏原制作所 蚀刻方法
CN104513627B (zh) * 2014-12-22 2017-04-05 深圳市力合材料有限公司 一种集成电路铜cmp组合物及其制备方法
KR101741707B1 (ko) 2015-02-27 2017-05-30 유비머트리얼즈주식회사 연마 슬러리 및 이를 이용한 기판 연마 방법
KR101834418B1 (ko) * 2015-10-02 2018-03-05 유비머트리얼즈주식회사 슬러리 및 이를 이용한 기판 연마 방법
US9484212B1 (en) 2015-10-30 2016-11-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method
KR102574851B1 (ko) * 2015-12-17 2023-09-06 솔브레인 주식회사 화학기계적 연마 슬러리 조성물
KR102543680B1 (ko) * 2015-12-17 2023-06-16 솔브레인 주식회사 화학기계적 연마 슬러리 조성물
US11339308B2 (en) * 2016-03-01 2022-05-24 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method
US10647887B2 (en) * 2018-01-08 2020-05-12 Cabot Microelectronics Corporation Tungsten buff polishing compositions with improved topography
US10727076B2 (en) * 2018-10-25 2020-07-28 Taiwan Semiconductor Manufacturing Company Ltd. Slurry and manufacturing semiconductor using the slurry
WO2020245904A1 (ja) 2019-06-04 2020-12-10 昭和電工マテリアルズ株式会社 研磨液、分散体、研磨液の製造方法及び研磨方法
CN113004802B (zh) * 2019-12-20 2024-04-12 安集微电子（上海）有限公司 一种化学机械抛光液
CN113122141B (zh) * 2019-12-30 2024-08-02 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
CN111218687B (zh) * 2020-03-30 2022-01-21 惠州宇盛机械设备有限公司 一种用于精密铜合金工件的化学抛光液
KR102455159B1 (ko) * 2020-07-17 2022-10-18 주식회사 케이씨텍 금속막 연마용 슬러리 조성물
CN116323842B (zh) * 2020-07-27 2025-05-30 山口精研工业株式会社 研磨剂组合物以及使用研磨剂组合物的研磨方法
KR102531445B1 (ko) * 2020-10-28 2023-05-12 주식회사 케이씨텍 연마 슬러리 조성물

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5230833A (en) 1989-06-09 1993-07-27 Nalco Chemical Company Low sodium, low metals silica polishing slurries
US5196353A (en) 1992-01-03 1993-03-23 Micron Technology, Inc. Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer
US6614529B1 (en) 1992-12-28 2003-09-02 Applied Materials, Inc. In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
US5658183A (en) 1993-08-25 1997-08-19 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing including optical monitoring
US5433651A (en) 1993-12-22 1995-07-18 International Business Machines Corporation In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing
JP3270282B2 (ja) 1994-02-21 2002-04-02 株式会社東芝 半導体製造装置及び半導体装置の製造方法
JP3313505B2 (ja) 1994-04-14 2002-08-12 株式会社日立製作所 研磨加工法
US5964643A (en) 1995-03-28 1999-10-12 Applied Materials, Inc. Apparatus and method for in-situ monitoring of chemical mechanical polishing operations
US5893796A (en) 1995-03-28 1999-04-13 Applied Materials, Inc. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
US5838447A (en) 1995-07-20 1998-11-17 Ebara Corporation Polishing apparatus including thickness or flatness detector
US5858813A (en) * 1996-05-10 1999-01-12 Cabot Corporation Chemical mechanical polishing slurry for metal layers and films
US5872633A (en) 1996-07-26 1999-02-16 Speedfam Corporation Methods and apparatus for detecting removal of thin film layers during planarization
US5958288A (en) 1996-11-26 1999-09-28 Cabot Corporation Composition and slurry useful for metal CMP
US6068787A (en) 1996-11-26 2000-05-30 Cabot Corporation Composition and slurry useful for metal CMP
US5759917A (en) * 1996-12-30 1998-06-02 Cabot Corporation Composition for oxide CMP
US5916855A (en) * 1997-03-26 1999-06-29 Advanced Micro Devices, Inc. Chemical-mechanical polishing slurry formulation and method for tungsten and titanium thin films
US5910022A (en) * 1997-05-22 1999-06-08 Vlsi Technology, Inc. Method and system for tungsten chemical mechanical polishing for unplanarized dielectric surfaces
US6083419A (en) * 1997-07-28 2000-07-04 Cabot Corporation Polishing composition including an inhibitor of tungsten etching
AU2001251318A1 (en) * 2000-04-07 2001-10-23 Cabot Microelectronics Corporation Integrated chemical-mechanical polishing
TW462908B (en) * 2000-09-25 2001-11-11 United Microelectronics Corp Chemical mechanical polishing
DE10109483A1 (de) 2001-02-28 2002-09-05 Clariant Gmbh Oxalkylierungsprodukte hergestellt aus Epoxiden und Aminen und deren Verwendung in Pigmentpräparationen
JP2003086548A (ja) * 2001-06-29 2003-03-20 Hitachi Ltd 半導体装置の製造方法及びその研磨液
US20030162398A1 (en) 2002-02-11 2003-08-28 Small Robert J. Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same
US20030162399A1 (en) * 2002-02-22 2003-08-28 University Of Florida Method, composition and apparatus for tunable selectivity during chemical mechanical polishing of metallic structures
WO2004101222A2 (en) 2003-05-12 2004-11-25 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for step-ii copper liner and other associated materials and method of using same
US7736405B2 (en) * 2003-05-12 2010-06-15 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for copper and associated materials and method of using same
US7018560B2 (en) * 2003-08-05 2006-03-28 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Composition for polishing semiconductor layers
US7153335B2 (en) * 2003-10-10 2006-12-26 Dupont Air Products Nanomaterials Llc Tunable composition and method for chemical-mechanical planarization with aspartic acid/tolyltriazole
JP2005244123A (ja) * 2004-02-27 2005-09-08 Fujimi Inc 研磨用組成物
JP2006049479A (ja) * 2004-08-03 2006-02-16 Nitta Haas Inc 化学的機械研磨方法
US20060110923A1 (en) * 2004-11-24 2006-05-25 Zhendong Liu Barrier polishing solution

Also Published As

Publication number Publication date
IL195697A (en) 2012-12-31
CN101479359A (zh) 2009-07-08
MY144326A (en) 2011-08-29
IL195697A0 (en) 2009-09-01
TW200811277A (en) 2008-03-01
JP5986146B2 (ja) 2016-09-06
KR20090023640A (ko) 2009-03-05
US7294576B1 (en) 2007-11-13
JP2009543336A (ja) 2009-12-03
CN101479359B (zh) 2012-12-26
EP2038361A4 (en) 2011-04-20
KR101252895B1 (ko) 2013-04-09
SG173331A1 (en) 2011-08-29
WO2008005160A1 (en) 2008-01-10
EP2038361A1 (en) 2009-03-25
JP2014205851A (ja) 2014-10-30
TWI354697B (en) 2011-12-21

Similar Documents

Publication Publication Date Title
JP5986146B2 (ja) 基板を化学機械的に研磨加工する方法
CN101297015B (zh) 用于cmp的抛光流体和方法
KR101069472B1 (ko) 칼코게나이드 물질의 화학 기계적 평탄화 방법
TWI414573B (zh) 半導體材料之ｃｍｐ之組合物及方法
CN101553550B (zh) 用于抛光镶嵌结构中的铝/铜及钛的组合物
JP5314019B2 (ja) ルテニウムｃｍｐ組成物及び方法
EP3692107B1 (en) Surface treated abrasive particles for tungsten buff applications
TWI730970B (zh) 研磨方法及雜質去除用組成物以及基板及其製造方法
JP6189571B1 (ja) 研磨用組成物およびこれを用いた研磨方法、ならびにこれらを用いた研磨済研磨対象物の製造方法
JP2011508423A (ja) 金属除去速度を制御するためのハロゲン化物アニオン
US6830503B1 (en) Catalyst/oxidizer-based CMP system for organic polymer films
CN110088359B (zh) 高温cmp组合物及其使用方法
JP6542766B2 (ja) 金属膜研磨スラリー組成物、及びこれを利用した金属膜研磨時に発生するスクラッチの減少方法
CN101675138B (zh) 含有可溶性金属过氧酸盐络合物的化学机械抛光组合物及其使用方法
KR102258900B1 (ko) 금속막 연마용 슬러리 조성물
US7776230B2 (en) CMP system utilizing halogen adduct
JP7607581B2 (ja) タングステンバフ用途のための表面被覆された研削粒子
JP4231950B2 (ja) 金属膜用研磨剤
CN120530170A (zh) 用于金属膜的cmp的组合物和方法
KR20050052180A (ko) 다기능성 첨가제를 포함하는 화학적 기계적 연마용 슬러리

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100402

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20100402

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120828

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120831

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20121128

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130604

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20130902

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20130909

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20140304

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140704

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20140801

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20140930

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20141030

R150 Certificate of patent or registration of utility model

Ref document number: 5642962

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250