KR101252895B1 - Ｃｍｐ 적용에서의 조율가능한 선택성 슬러리 - Google Patents

Ｃｍｐ 적용에서의 조율가능한 선택성 슬러리 Download PDF

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Publication number
KR101252895B1
KR101252895B1 KR1020087031578A KR20087031578A KR101252895B1 KR 101252895 B1 KR101252895 B1 KR 101252895B1 KR 1020087031578 A KR1020087031578 A KR 1020087031578A KR 20087031578 A KR20087031578 A KR 20087031578A KR 101252895 B1 KR101252895 B1 KR 101252895B1
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South Korea
Prior art keywords
layer
chemical
polishing composition
mechanical polishing
selectivity
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Expired - Fee Related
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KR1020087031578A
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English (en)
Korean (ko)
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KR20090023640A (ko
Inventor
잔 첸
로버트 바카시
벤자민 바이엘
디네시 칸나
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캐보트 마이크로일렉트로닉스 코포레이션
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Publication of KR20090023640A publication Critical patent/KR20090023640A/ko
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020087031578A 2006-06-29 2007-06-13 Ｃｍｐ 적용에서의 조율가능한 선택성 슬러리 Expired - Fee Related KR101252895B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/478,023 2006-06-29
US11/478,023 US7294576B1 (en) 2006-06-29 2006-06-29 Tunable selectivity slurries in CMP applications
PCT/US2007/013889 WO2008005160A1 (en) 2006-06-29 2007-06-13 Tunable selectivity slurries in cmp applications

Publications (2)

Publication Number Publication Date
KR20090023640A KR20090023640A (ko) 2009-03-05
KR101252895B1 true KR101252895B1 (ko) 2013-04-09

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Family Applications (1)

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KR1020087031578A Expired - Fee Related KR101252895B1 (ko) 2006-06-29 2007-06-13 Ｃｍｐ 적용에서의 조율가능한 선택성 슬러리

Country Status (10)

Country Link
US (1) US7294576B1 (https=)
EP (1) EP2038361A4 (https=)
JP (2) JP5642962B2 (https=)
KR (1) KR101252895B1 (https=)
CN (1) CN101479359B (https=)
IL (1) IL195697A (https=)
MY (1) MY144326A (https=)
SG (1) SG173331A1 (https=)
TW (1) TWI354697B (https=)
WO (1) WO2008005160A1 (https=)

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CN102650059B (zh) * 2009-06-26 2015-04-15 中国石油化工股份有限公司 一种丁基橡胶氯甲烷甘醇脱水再生系统的复合缓蚀剂
KR101419295B1 (ko) 2012-03-30 2014-07-14 니타 하스 인코포레이티드 연마 조성물
US8778212B2 (en) 2012-05-22 2014-07-15 Cabot Microelectronics Corporation CMP composition containing zirconia particles and method of use
US9303189B2 (en) * 2014-03-11 2016-04-05 Cabot Microelectronics Corporation Composition for tungsten CMP
US9238754B2 (en) * 2014-03-11 2016-01-19 Cabot Microelectronics Corporation Composition for tungsten CMP
CN111584354B (zh) * 2014-04-18 2021-09-03 株式会社荏原制作所 蚀刻方法
CN104513627B (zh) * 2014-12-22 2017-04-05 深圳市力合材料有限公司 一种集成电路铜cmp组合物及其制备方法
KR101741707B1 (ko) 2015-02-27 2017-05-30 유비머트리얼즈주식회사 연마 슬러리 및 이를 이용한 기판 연마 방법
KR101834418B1 (ko) * 2015-10-02 2018-03-05 유비머트리얼즈주식회사 슬러리 및 이를 이용한 기판 연마 방법
US9484212B1 (en) 2015-10-30 2016-11-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method
KR102574851B1 (ko) * 2015-12-17 2023-09-06 솔브레인 주식회사 화학기계적 연마 슬러리 조성물
KR102543680B1 (ko) * 2015-12-17 2023-06-16 솔브레인 주식회사 화학기계적 연마 슬러리 조성물
US11339308B2 (en) * 2016-03-01 2022-05-24 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method
US10647887B2 (en) * 2018-01-08 2020-05-12 Cabot Microelectronics Corporation Tungsten buff polishing compositions with improved topography
US10727076B2 (en) * 2018-10-25 2020-07-28 Taiwan Semiconductor Manufacturing Company Ltd. Slurry and manufacturing semiconductor using the slurry
WO2020245904A1 (ja) 2019-06-04 2020-12-10 昭和電工マテリアルズ株式会社 研磨液、分散体、研磨液の製造方法及び研磨方法
CN113004802B (zh) * 2019-12-20 2024-04-12 安集微电子（上海）有限公司 一种化学机械抛光液
CN113122141B (zh) * 2019-12-30 2024-08-02 安集微电子科技（上海）股份有限公司 一种化学机械抛光液
CN111218687B (zh) * 2020-03-30 2022-01-21 惠州宇盛机械设备有限公司 一种用于精密铜合金工件的化学抛光液
KR102455159B1 (ko) * 2020-07-17 2022-10-18 주식회사 케이씨텍 금속막 연마용 슬러리 조성물
CN116323842B (zh) * 2020-07-27 2025-05-30 山口精研工业株式会社 研磨剂组合物以及使用研磨剂组合物的研磨方法
KR102531445B1 (ko) * 2020-10-28 2023-05-12 주식회사 케이씨텍 연마 슬러리 조성물

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US20030162399A1 (en) * 2002-02-22 2003-08-28 University Of Florida Method, composition and apparatus for tunable selectivity during chemical mechanical polishing of metallic structures

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US5858813A (en) * 1996-05-10 1999-01-12 Cabot Corporation Chemical mechanical polishing slurry for metal layers and films
US5916855A (en) * 1997-03-26 1999-06-29 Advanced Micro Devices, Inc. Chemical-mechanical polishing slurry formulation and method for tungsten and titanium thin films
US20030162399A1 (en) * 2002-02-22 2003-08-28 University Of Florida Method, composition and apparatus for tunable selectivity during chemical mechanical polishing of metallic structures

Also Published As

Publication number Publication date
IL195697A (en) 2012-12-31
JP5642962B2 (ja) 2014-12-17
CN101479359A (zh) 2009-07-08
MY144326A (en) 2011-08-29
IL195697A0 (en) 2009-09-01
TW200811277A (en) 2008-03-01
JP5986146B2 (ja) 2016-09-06
KR20090023640A (ko) 2009-03-05
US7294576B1 (en) 2007-11-13
JP2009543336A (ja) 2009-12-03
CN101479359B (zh) 2012-12-26
EP2038361A4 (en) 2011-04-20
SG173331A1 (en) 2011-08-29
WO2008005160A1 (en) 2008-01-10
EP2038361A1 (en) 2009-03-25
JP2014205851A (ja) 2014-10-30
TWI354697B (en) 2011-12-21

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