JP5636219B2 - 光受信器 - Google Patents
光受信器 Download PDFInfo
- Publication number
- JP5636219B2 JP5636219B2 JP2010155187A JP2010155187A JP5636219B2 JP 5636219 B2 JP5636219 B2 JP 5636219B2 JP 2010155187 A JP2010155187 A JP 2010155187A JP 2010155187 A JP2010155187 A JP 2010155187A JP 5636219 B2 JP5636219 B2 JP 5636219B2
- Authority
- JP
- Japan
- Prior art keywords
- light receiving
- receiving element
- optical receiver
- temperature
- thermistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000003287 optical effect Effects 0.000 title claims description 26
- 230000005540 biological transmission Effects 0.000 claims description 4
- 239000003990 capacitor Substances 0.000 claims description 4
- 238000000427 thin-film deposition Methods 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 8
- 238000013016 damping Methods 0.000 description 7
- 239000002184 metal Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000011144 upstream manufacturing Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05554—Shape in top view being square
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
Landscapes
- Light Receiving Elements (AREA)
- Optical Communication System (AREA)
Description
図1及び図2は、本発明の第1実施形態に係る光受信器の回路図及び概略図である。光受信器は、CAN型の金属パッケージ筐体8を備えており、その内部に、サブマウント6と、増幅器としてのTIA(トランスインピーダンスアンプ)7と、が配置されている。サブマウント6上には、フォトダイオードからなる受光素子5と、感温素子としてのサーミスタ4と、が実装されている。
図5及び図6は、本発明の第2実施形態に係る光受信器の回路図及び概略図である。上記実施形態と重複する構成については、同番号を付すことで詳細な説明を省略する。
Claims (4)
- 電源から電圧が印加される、光信号を電気信号に変換する受光素子と、
前記電源と前記受光素子の間に設けられるRF接地用コンデンサと、
前記受光素子から出力される電気信号を増幅する増幅器と、
前記RF接地用コンデンサから前記受光素子に至る伝送路上及び前記受光素子から前記増幅器に至る伝送路上の少なくとも一方に設けられる、抵抗の温度係数が負の感温素子と、
を備えることを特徴とする光受信器。 - 前記感温素子は、前記受光素子と共にサブマウント上に実装される、
請求項1に記載の光受信器。 - 前記感温素子は、前記受光素子が実装されるサブマウント上に薄膜蒸着によって形成される、
請求項1に記載の光受信器。 - 前記感温素子のB定数は、2000K以上2400K以下である、
請求項1に記載の光受信器。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010155187A JP5636219B2 (ja) | 2010-07-07 | 2010-07-07 | 光受信器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010155187A JP5636219B2 (ja) | 2010-07-07 | 2010-07-07 | 光受信器 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012019354A JP2012019354A (ja) | 2012-01-26 |
JP5636219B2 true JP5636219B2 (ja) | 2014-12-03 |
Family
ID=45604268
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010155187A Active JP5636219B2 (ja) | 2010-07-07 | 2010-07-07 | 光受信器 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5636219B2 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021044437A (ja) * | 2019-09-12 | 2021-03-18 | 住友電気工業株式会社 | 受光装置 |
JP7376559B2 (ja) * | 2021-11-26 | 2023-11-08 | アンリツ株式会社 | 光電気変換モジュールおよびそれを用いた光サンプリングオシロスコープ |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS547231B2 (ja) * | 1973-03-23 | 1979-04-05 | ||
US4438348A (en) * | 1978-10-06 | 1984-03-20 | Harris Corporation | Temperature compensated avalanche photodiode optical receiver circuit |
JPS5995711A (ja) * | 1982-11-24 | 1984-06-01 | Yokogawa Hokushin Electric Corp | アバランシエフオトダイオ−ドの駆動回路 |
JP2733763B2 (ja) * | 1987-01-30 | 1998-03-30 | 日本電信電話株式会社 | Apdバイアス回路 |
JPH05121805A (ja) * | 1991-10-30 | 1993-05-18 | Nikon Corp | レーザ駆動装置 |
JPH1168129A (ja) * | 1997-08-26 | 1999-03-09 | Rohm Co Ltd | 時分割双方向光通信用モジュールおよび送受信機 |
JP2005108935A (ja) * | 2003-09-29 | 2005-04-21 | Opnext Japan Inc | 光受信モジュール及びその製造方法 |
-
2010
- 2010-07-07 JP JP2010155187A patent/JP5636219B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
JP2012019354A (ja) | 2012-01-26 |
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